In-plane Lattice Research Articles

Effects of Thermal Energy on the Formation of Lattice Strain in VO2 Thin Films Grown on TiO2(001).

Film thickness is a well-known experimental parameter for controlling lattice strain in oxide films. However, due to environmental and resource conservation considerations, films need to be as thin as possible, increasing the need to find alternative factors for strain management. Herein, we present the importance of thermal energy as a factor for the formation of lattice strain in the oxide films, specifically focusing on the effects of laser fluence during pulsed laser deposition (PLD) on the in-plane lattice strain of vanadium dioxide (VO2) thin films grown on titanium dioxide (TiO2) (001). VO2 thin films were deposited using a KrF excimer laser (λ = 248 nm) at laser fluences ranging from 0.88 to 1.70 J/cm2. The film thickness ranged from 10-15 nm, below the critical thickness. Films grown at higher laser fluences exhibited smooth surfaces and completely strained in-plane lattices. In contrast, films grown at lower laser fluences displayed numerous small islands and relaxed in-plane lattice strain. The metal-insulator transition (MIT) temperature was lower for films grown at higher laser fluencies compared to those grown at lower laser fluences. It was also revealed that Ti-V interdiffusion occurs, forming a solid solution (V1-xTixO2) near the interface. These observations suggest that the thermal energy of the particles, influenced by laser fluence, is a critical factor in the formation of lattice strain in metal oxide films and also that laser fluence in PLD is an effective experimental parameter for strain management in oxide films. Our findings enhance the understanding of lattice strain formation in metal oxides and offer insights for establishing effective methods for controlling lattice strain in metal oxide films.

Self-Assembly of Chiral Ligands on 2D Semiconductor Nanoplatelets for High Circular Dichroism.

Group II-VI semiconductor nanoplatelets (NPLs) with atomically defined thicknesses and extended atomically flat (001) facets are used for ligand binding and chiro-optical effects. In this study, we demonstrate that tartrate ligands, anchored by two carboxylate groups, chelate the (001) facets of NPLs at an average ratio of one tartrate molecule to two cadmium (Cd) surface atoms. This assembly of chiral molecules on inorganic nanocrystals generates a circular dichroism g-factor as high as 1.3 × 10-2 at the first excitonic transition wavelength of NPLs. Tartrate ligands induce an orthorhombic distortion of the initially "cubic" crystal structure, classifying the NPLs within the 222-point group. Unlike spherical nanocrystals, where it is difficult to discern whether chiral ligands affect only the surface atoms or the entire crystal structure, our findings unequivocally show that the crystal structure of NPLs is modified due to their thinness and atomically precise thickness. The in-plane lattice parameters experience compressive and tensile stresses, significantly splitting the heavy-hole and light-hole bands. Additionally, tartrate ligands adopt different conformations on the NPL surface over time, resulting in dynamic changes in the circular dichroism signal, including an inversion of its sign.

Vibronics of multi-material nanopillared membranes and impact on the thermal conductivity

Atomic motion in nanopillars standing on the surface of a silicon membrane generates vibrons, which are wavenumber-independent phonons that act as local resonances. These vibrons couple with the vast majority of the phonon population, including heat-carrying phonons, traveling along the base membrane causing a reduction in the in-plane lattice thermal conductivity. In this work, we examine isolated silicon and gallium nitride nanopillars and for each compare the vibrons density of states (DOS) to those of phonons in an isolated version of the silicon membrane. We show that while the conformity of the phonon-vibron DOS distribution between the two components across the full spectrum is a key factor in reducing the thermal conductivity of the assembled nanostructure, the presence of an intense vibron population at more dominant low frequencies plays a competing role. We report predictions from molecular dynamics simulations showing lower thermal conductivities for a silicon membrane with gallium-nitride nanopillars compared to a silicon membrane with silicon nanopillars.

Boosting the efficiency of InGaN-based green LEDs grown on Si through buffer strain engineering

InGaN-based micro-light-emitting diodes (LEDs) grown on Si have gained tremendous interest for full-color displays. Strain management is a key challenge for the epitaxial growth of InGaN-based long-wavelength LEDs on Si because the accumulated compressive strain can severely limit In incorporation and degrade the quality of InGaN multi-quantum wells (MQWs) when the conventional Al-composition step-graded AlN/AlGaN buffer is used for strain control. In this work, we demonstrate a promising approach to effectively reduce the in-plane residual compressive stress of GaN by using an AlN single-layer buffer. The in-plane lattice parameter of the GaN underlayer was increased from 3.183 to 3.189 Å with the residual compressive stress at room temperature reduced from 0.37 to ∼0 GPa, which significantly improved the In incorporation of InGaN MQWs and extended the photoluminescence wavelength from 510 to 550 nm. A remarkably high internal quantum efficiency of 78% was thus achieved for the as-grown InGaN-based green LEDs on Si. This work paves the way for the growth of high-efficiency InGaN-based long-wavelength micro-LEDs.

Polarization-sensitive and wide-spectrum photodetector from ultraviolet to near-infrared light based on 2D tellurium at room temperature

Two-dimensional (2D) materials have emerged as promising candidates for photodetection applications, due to their unique structural and optical properties. Herein, we conducted a comprehensive investigation of the 2D Te-based photodetector. The crystal structure, angle-resolved polarized Raman (ARPR) spectroscopy, and theoretical analysis demonstrate the in-plane lattice anisotropy of Te, underlining its suitability for polarization-dependent photodetection. Photocurrent measurements over a broad spectral range (from 365 to 1310 nm) reveal excellent photoresponse characteristics, with responsivity (Rλ) and detectivity (D*) values reaching up to 1189 A/W and 11.51 × 108 Jones, respectively, under 1064 nm illumination. Furthermore, the Te-based photodetector exhibits superior stability, retaining approximately 90 % of its initial performance after six months of ambient exposure. Polarization-sensitive photodetection experiments show significant dichroism ratios (up to 4.6 for 1064 nm illumination), emphasizing the potential of 2D Te for advanced polarization applications. The combination of the broad spectral response, high anisotropy ratio, and long-term stability positions 2D Te as a promising candidate for future photodetection technologies.

Strained single crystal high entropy oxide manganite thin films

The ability to accommodate multiple principal cations within a single crystallographic structure makes high entropy oxides (HEOs) ideal systems for exploring new composition–property relationships. In this work, the high-entropy design strategy is extended to strained single-crystal HEO-manganite (HEO-Mn) thin films. Phase-pure orthorhombic films of (Gd0.2La0.2Nd0.2Sm0.2Sr0.2)MnO3 were deposited on three different single-crystal substrates: SrTiO3 (STO) (100), NdGaO3 (110), and LaAlO3 (LAO) (100), each inducing different degrees of epitaxial strain. Fully coherent growth of the thin films is observed in all cases, despite the high degree of lattice mismatch between HEO-Mn and LAO. Magnetometry measurements reveal distinct differences in the magnetic properties between epitaxially strained HEO-Mn thin films and their bulk crystalline HEO counterparts. In particular, the bulk polycrystalline HEO-Mn shows two magnetic transitions as opposed to a single one observed in epitaxial thin films. Moreover, the HEO-Mn film deposited on LAO exhibits a significant reduction in the Curie temperature, which is attributed to the strong variation of the in-plane lattice parameter along the thickness of the film and the resulting changes in the Mn–O–Mn bond geometry. Thus, this preliminary study demonstrates the potential of combining high entropy design with strain engineering to tailor the structure and functionality of perovskite manganites.

Comparing the Impacts of Strain Types on Oxygen-Vacancy Formation in a Perovskite Oxide via Nanometer-Scale Strain Fields.

The utilization of an in-plane lattice misfit in an oxide epitaxially grown on another oxide with a different lattice parameter is a well-known approach to induce strains in oxide materials. However, achieving a sufficiently large misfit strain in this heteroepitaxial configuration is usually challenging, unless the thickness of the grown oxide is kept well below a critical value to prevent the formation of misfit dislocations at the interface for relaxation. Instead of adhering to this conventional approach, here, we employ nanometer-scale large strain fields built around misfit dislocations to examine the effects of two distinct types of strains─tension and compression─on the generation of oxygen vacancies in heteroepitaxial LaCoO3 films. Our atomic-level observations, coupled with local electron-beam irradiation, clarify that the in-plane compression notably suppresses the creation of oxygen vacancies, whereas the formation of vacancies is facilitated under tensile strain. Demonstrating that the defect generation can considerably vary with the type of strain, our study highlights that the experimental approach adopted in this work is applicable to other oxide systems when investigating the strain effects on vacancy formation.

Interfacial stress engineering toward enhancement of ferroelectricity in Al doped HfO2 thin films

Abstract Ferroelectric HfO2 have attracted much attention owing to their superior ferroelectricity at an ultra-thin thickness and good compatibilities with Si-based complementary-metal-oxide-semiconductor (CMOS) technology. However, the crystallization of polar orthorhombic phase (o-phase) HfO2 is less competitive, which greatly limits the ferroelectricity of as-obtained ferroelectric HfO2 thin films. Fortunately, the crystallization of o-phase HfO2 can be thermodynamically modulated via interfacial stress engineering. In this paper, the growth of improved ferroelectric Al doped HfO2 (HfO2:Al) thin films on (111)-oriented Si substrate have been reported. Structural analysis has suggested that non-polar monoclinic HfO2:Al grown on (111)-oriented Si substrate suffered from a strong compressive strain, which promoted the crystallization of (111)-oriented o-phase HfO2 in the as-grown HfO2:Al thin films. In addition, the in-plane lattice of (111)-oriented Si substrate matches well with that of (111)-oriented o-phase HfO2, which further thermally stabilized the o-phase HfO2. Accordingly, an improved ferroelectricity with a remnant polarization (2P r) of 26.7 μC/cm2 has been obtained. The results shown in this work provide a simple way toward the preparation of improved ferroelectric HfO2 thin films.

Anisotropic optical property of ferroelectric Bi2O2X(X = S,Se,Te) monolayer and strain engineering

Based on the first-principles calculations, ferroelectric Bi2O2X(X = S,Se,Te) monolayers with unequivalent in-plane lattice constants are confirmed to be the ground state, which is consistent with the experiment result (Ghosh et al 2019 Nano Lett. 19 5703–09), and the anisotropic optical property is firstly investigated. We find that the polarizations of Bi2O2X monolayers points along the direction of a-axis, and Bi2O2Te monolayer process the largest polarization. Furthermore, both the biaxial and uniaxial strains are favor for the enhancement of polarization of Bi2O2X monolayers. It should be mentioned that the type of band gap will convert from indirect to direct for Bi2O2Te monolayer when the a-axial tensile strain is larger than 2%. At last, the optical absorption coefficient for Bi2O2X monolayers are calculated, and we obtain that Bi2O2Te monolayer has the strongest optical absorption within the range of visible light, the anisotropy and possible strain engineering to improve the optical absorption are discussed in detail. Our findings are significant in fields of optoelectronics and photovoltaics.

Correlated electron-nuclear dynamics of photoinduced water dissociation on rutile TiO2.

Elucidating the mechanism of photoinduced water splitting on TiO2 is important for advancing the understanding of photocatalysis and the ability to control photocatalytic surface reactions. However, incomplete experimental information and complex coupled electron-nuclear motion make the microscopic understanding challenging. Here we analyse the atomic-scale pathways of photogenerated charge carrier transport and photoinduced water dissociation at the prototypical water-rutile TiO2(110) interface using first-principles dynamics simulations. Two distinct mechanisms are observed. Field-initiated electron migration leads to adsorbed water dissociation via proton transfer to a surface bridging oxygen. In the other pathway, adsorbed water dissociation occurs via proton donation to a second-layer water molecule coupled to photoexcited-hole transfer promoted by in-plane surface lattice distortions. Two stages of non-adiabatic in-plane lattice motion-expansion and recovery-are observed, which are closely associated with population changes in Ti3d orbitals. Controlling such highly correlated electron-nuclear dynamics may provide opportunities for boosting the performance of photocatalytic materials.

On-Water Surface Synthesis of Vinylene-Linked Cationic Two-Dimensional Polymer Films as the Anion-Selective Electrode Coating.

Vinylene-linked two-dimensional polymers (V-2DPs) and their layer-stacked covalent organic frameworks (V-2D COFs) featuring high in-plane π-conjugation and robust frameworks have emerged as promising candidates for energy-related applications. However, current synthetic approaches are restricted to producing V-2D COF powders that lack processability, impeding their integration into devices, particularly within membrane technologies reliant upon thin films. Herein, we report the novel on-water surface synthesis of vinylene-linked cationic 2DPs films (V-C2DP-1 and V-C2DP-2) via Knoevenagel polycondensation, which serve as the anion-selective electrode coating for highly-reversible and durable zinc-based dual-ion batteries (ZDIBs). Model reactions and theoretical modeling revealed the enhanced reactivity and reversibility of the Knoevenagel reaction on the water surface. On this basis, we demonstrated the on-water surface 2D polycondensation towards V-C2DPs films that show large lateral size, tunable thickness, and high chemical stability. Representatively, V-C2DP-1 presents as a fully crystalline and face-on oriented film with in-plane lattice parameters of a=b≈43.3 Å. Profiting from its well-defined cationic sites, oriented 1D channels, and stable frameworks, V-C2DP-1 film possesses superior bis(trifluoromethanesulfonyl)imide anion (TFSI-)-transport selectivity (transference, t_=0.85) for graphite cathode in high-voltage ZDIBs, thus triggering additional TFSI--intercalation stage and promoting its specific capacity (from ~83 to 124 mAh g-1) and cycling life (>1000 cycles, 95 % capacity retention).

Disruption of polar order in lead zirconate titanate by composition-modulated artificial superlattice

Lead zirconate titanate (Pb (Zrx, Ti1−x)O3: PZT) is a well-known ferroelectric compound, in which long-range polar order is usually developed. In the present study, it was clarified by distortion-corrected atomic-scale scanning transmission electron microscopy imaging that long-range polar order is disrupted in PZT by utilizing composition-modulated superlattice. Shape of unit cell was unusual both in the Pb(Zr0.65Ti0.35)O3 (PZT65) and Pb(Zr0.30Ti0.70)O3 (PZT30) layers, which was due to mutual in-plane lattice constraint. By taking account of this, first-principles calculations clarified that multiple directions can be energetically favorable for lead-ion displacement, which explains a reason why long-range polar order was disrupted.

Epitaxial twin coupled microstructure in GeSn films prepared by remote plasma enhanced chemical vapor deposition

Growth of GeSn films directly on Si substrates is desirable for integrated photonics applications since the absence of an intervening buffer layer simplifies device fabrication. Here, we analyze the microstructure of two GeSn films grown directly on (001) Si by remote plasma-enhanced chemical vapor deposition (RPECVD): a 1000 nm thick film containing 3% Sn and a 600 nm thick, 10% Sn film. Both samples consist of an epitaxial layer with nano twins below a composite layer containing nanocrystalline and amorphous. The epilayer has uniform composition, while the nanocrystalline material has higher levels of Sn than the surrounding amorphous matrix. These two layers are separated by an interface with a distinct, hilly morphology. The transition between the two layers is facilitated by formation of densely populated (111)-coupled nano twins. The 10% Sn sample exhibits a significantly thinner epilayer than the one with 3% Sn. The in-plane lattice mismatch between GeSn and Si induces a quasi-periodic misfit dislocation network along the interface. Film growth initiates at the interface through formation of an atomic-scale interlayer with reduced Sn content, followed by the higher Sn content epitaxial layer. A corrugated surface containing a high density of twins with elevated levels of Sn at the peaks begins forming at a critical thickness. Subsequent epitaxial breakdown at the peaks produces a composite containing high levels of Sn nanocrystalline embedded in lower level of Sn amorphous. The observed microstructure and film evolution provide valuable insight into the growth mechanism that can be used to tune the RPECVD process for improved film quality.

A Strontium Quantum-Gas Microscope

The development of quantum-gas microscopes has brought novel ways of probing quantum degenerate many-body systems at the single-atom level. Until now, most of these setups have focused on alkali atoms. Expanding quantum-gas microscopy to alkaline-earth elements will provide new tools, such as SU(N)-symmetric fermionic isotopes or ultranarrow optical transitions, to the field of quantum simulation. Here we demonstrate the site-resolved imaging of a 84Sr bosonic quantum gas in a Hubbard-regime optical lattice. The quantum gas is confined by a two-dimensional in-plane lattice and a light-sheet potential, which operate at the strontium clock-magic wavelength of 813.4 nm. We realize fluorescence imaging using the broad 461-nm transition, which provides high spatial resolution. Simultaneously, we perform attractive Sisyphus cooling with the narrow 689-nm intercombination line. We reconstruct the atomic occupation from the fluorescence images, obtaining imaging fidelities above 94%. Finally, we realize a 84Sr superfluid in the Bose-Hubbard regime. We observe its interference pattern upon expansion, a probe of phase coherence, with single-atom resolution. Our strontium quantum-gas microscope provides a new platform to study dissipative Hubbard models, quantum optics in atomic arrays, and SU(N) fermions at the microscopic level. Published by the American Physical Society 2024

2D Conjugated Polymer Thin Films for Organic Electronics: Opportunities and Challenges.

2D conjugated polymers (2DCPs) possess extended in-plane π-conjugated lattice and out-of-plane π-π stacking, which results in enhanced electronic performance and potentially unique band structures. These properties, along with predesignability, well-defined channels, easy postmodification, and order structure attract extensive attention from material science to organic electronics. In this review, the recent advance in the interfacial synthesis and conductivity tuning strategies of 2DCP thin films, as well as their application in organic electronics is summarized. Furthermore, it is shown that, by combining topology structure design and targeted conductivity adjustment, researchers have fabricated 2DCP thin films with predesigned active groups, highly ordered structures, and enhanced conductivity. These films exhibit great potential for various thin-film organic electronics, such as organic transistors, memristors, electrochromism, chemiresistors, and photodetectors. Finally, the future research directions and perspectives of 2DCPs are discussed in terms of the interfacial synthetic design and structure engineering for the fabrication of fully conjugated 2DCP thin films, as well as the functional manipulation of conductivity to advance their applications in future organic electronics.

Symmetry Breaking and Ascending in the Magnetic Kagome Metal FeGe

Spontaneous symmetry breaking—the phenomenon in which an infinitesimal perturbation can cause the system to break the underlying symmetry—is a cornerstone concept in the understanding of interacting solid-state systems. In a typical series of temperature-driven phase transitions, higher-temperature phases are more symmetric due to the stabilizing effect of entropy that becomes dominant as the temperature is increased. However, the opposite is rare but possible when there are multiple degrees of freedom in the system. Here, we present such an example of a symmetry-ascending phenomenon upon cooling in a magnetic kagome metal FeGe by utilizing neutron Larmor diffraction and Raman spectroscopy. FeGe has a kagome lattice structure with simple A-type antiferromagnetic order below Néel temperature TN≈400 K and a charge density wave (CDW) transition at TCDW≈110 K, followed by a spin-canting transition at around 60 K. In the paramagnetic state at 460 K, we confirm that the crystal structure is indeed a hexagonal kagome lattice. On cooling to around TN, the crystal structure changes from hexagonal to monoclinic with in-plane lattice distortions on the order of 10−4 and the associated splitting of the double-degenerate phonon mode of the pristine kagome lattice. Upon further cooling to TCDW, the kagome lattice shows a small negative thermal expansion, and the crystal structure gradually becomes more symmetric upon further cooling. A tendency of increasing the crystalline symmetry upon cooling is unusual; it originates from an extremely weak structural instability that coexists and competes with the CDW and magnetic orders. These observations are against the expectations for a simple model with a single order parameter and hence can only be explained by a Landau free energy expansion that takes into account multiple lattice, charge, and spin degrees of freedom. Thus, the determination of the crystalline lattice symmetry as well as the unusual spin-lattice coupling is a first step towards understanding the rich electronic and magnetic properties of the system, and it sheds new light on intertwined orders where the lattice degree of freedom is no longer dominant. Published by the American Physical Society 2024

Highly tailorable thermomechanical properties of nanograined silicon: Importance of grain size and grain anisotropy

Nanocrystalline silicon can have unique thermal transport and mechanical properties governed by its constituent grain microstructure. Here, we use phonon ray-tracing and molecular dynamics simulations to demonstrate the largely tunable thermomechanical behaviors with varying grain sizes (a0) and aspect ratios (ξ). Our work shows that, by selectively increasing the grain size along the heat transfer direction while keeping the grain area constant, the in-plane lattice thermal conductivity (kx) increases more significantly than the cross-plane lattice thermal conductivity (ky) due to anisotropic phonon–grain boundary scattering. While kx generally increases with increasing ξ, a critical value exists for ξ at which kx reaches its maximum. Beyond this transition point, further increases in ξ result in a decrease in kx due to substantial scattering of low-frequency phonons with anisotropic grain boundaries. Moreover, we observe reductions in the elastic and shear modulus with decreasing grain size, and this lattice softening leads to significant reductions in phonon group velocity and thermal conductivity. By considering both thermal and mechanical size effects, we identify two distinct regimes of thermal transport, in which anisotropic phonon–grain boundary scattering becomes more appreciable at low temperatures and lattice softening becomes more pronounced at high temperatures. Through phonon spectral analysis, we attribute the significant thermal conductivity anisotropy in nanograined silicon to grain boundary scattering of low-frequency phonons and the softening-driven thermal conductivity reduction to Umklapp scattering of high-frequency phonons. These findings offer insights into the manipulation of thermomechanical properties of nanocrystalline silicon via microstructure engineering, carrying profound implications for the development of future nanomaterials.

Thermal and magnetoelastic properties of the van der Waals ferromagnet Fe3−δGeTe2 : Anisotropic spontaneous magnetostriction and ferromagnetic magnon excitations

By determining the lattice parameters as a function of temperature of the hexagonal van der Waals ferromagnet Fe2.92(1)Ge1.02(3)Te2 we obtain the temperature dependence of the spontaneous in-plane magnetostriction in the ferromagnetic and the linear thermal expansion coefficients in the paramagnetic state. The spontaneous magnetostriction is clearly seen in the temperature dependence of the in-plane lattice parameter a(T), but less well pronounced perpendicular to the planes along c. Below TC the spontaneous magnetostriction follows a power law M(T)3/2 of the magnetization and leads to an expansion of the hexagonal layers. Extrapolating to T→ 0 K we obtain a spontaneous in-plane saturation magnetostriction of λsp,a(T→0)≈−220×10−6. In the paramagnetic state the linear thermal expansion coefficients amount to 13.9(1)×10−6K−1 and to 23.2(2)×10−6K−1 for the in-plane and out-of-plane direction, respectively, indicating a linear volume thermal expansion coefficient of 50.8(4)×10−6K−1 which we use to estimate the volume thermal expansion contribution to the heat capacity determined at constant pressure. A Sommerfeld-type linear term in the low-temperature heat capacities can be quantitatively ascribed to two-dimensional (2D) ferromagnetic magnon excitations. Published by the American Physical Society 2024

Strain accumulation and relaxation on crack formation in epitaxial AlN film on Si (111) substrate

The formation of cracks is often observed in the epitaxial growth of ultrawide-bandgap aluminum nitride (AlN) semiconductor films on economical and versatile silicon (Si) substrates due to the significant differences in in-plane lattice parameters and thermal expansion coefficients between the film and the substrate, which hampers the development of template, buffer layer, and device structure with a relatively thick AlN layer for devices. The present study aims to elucidate the conditions of crack formation through a simple but comprehensive estimation of strain energy accumulation and relaxation by lattice strain, misfit dislocation density, and crack formation. Strain energy in the epitaxial film from lattice and thermal mismatches is evaluated by an elastic strain equation tailored to the epitaxy of the hexagonal crystal structure. The effects of temperature, thickness, and dislocation density on the lattice and dislocation strain energies of the film are also considered. Finally, the comparison in the changes in the total strain energy and cleavage energy with decreasing temperature shows that cleavage energy is higher than strain energy if the film is thinner than 400 nm but becomes lower than the strain energy if the film is thicker than 400 nm during cooldown, suggesting the crack formation, which matches well with experimental observations.

Co-deposition of bismuth-nitrogen films on MgO (001) by molecular beam epitaxy

We attempted to grow a thin film of BiN by co-deposition of bismuth and nitrogen on rock-salt structure MgO (001) substrates. Furthermore, we studied the effect of variation of the growth temperature and the nitrogen to bismuth flux ratios on sample growth. For the samples grown and conditions used, we do not find strong evidence for the formation of a bulk Bi-N alloy. Even for very high nitrogen to bismuth flux ratio, we observed only bismuth and no nitrogen using bulk Rutherford back-scattering spectroscopy measurements, and only 1%–2% nitrogen was seen through surface Auger electron spectroscopy measurements. The in-plane lattice measurements show that the resulting Bi (110) samples are strained, which is presumably caused by lattice mismatch between the sample and the substrate when grown without any buffer layer. The use of a high-temperature buffer layer helps to release strain in the sample but only along one axis. Measurements of the atomic layer spacing using x-ray diffraction and also scanning tunneling microscopy confirm the Bi (110) thin film sample structure.