We studied indium and gallium in porous glass by resistance and magnetization measurements. For indium in porous glass, a very sharp superconducting transition is observed at ${T}_{1}=4.0\ifmmode\pm\else\textpm\fi{}0.05\mathrm{K}.$ When a 1.5 T magnetic field is applied, there is a second transition at ${T}_{2}\ensuremath{\sim}3.5\mathrm{K}.$ At 3.5 K, the field dependence of resistance $R(H)$ indicates two transitions at ${H}_{c}^{u}\ensuremath{\sim}1.4$ and ${H}_{c}^{l}\ensuremath{\sim}0.4\mathrm{T}$ separated by a plateau. For indium in porous glass, the origins of two-step transitions in $R(T)$ and $R(H)$ might be the same. At ${H}_{c}^{u}$ (or ${T}_{1})$ the individual grains of indium in porous glass become superconductors and at ${H}_{c}^{l}$ (or ${T}_{2})$ all grains are coupled. For gallium in porous glass, two superconducting transitions of $R(T)$ at ${T}_{1}=7.0$ and ${T}_{2}=6.3\mathrm{K}$ are observed. Between 6.35 and 6.30 K, $R(T)$ increases sharply with decreasing temperature. The quasiparticle tunneling or the conductor-superconductor-conductor coupling might cause the sharp rise in resistance between 6.35 and 6.30 K. At 6 K, there are two transitions at ${H}_{c}^{u}=2.1\mathrm{T}$ and ${H}_{c}^{l}=1.1\mathrm{T}$ in the $R(H)$ for gallium in porous glass. The two different transitions of $R(H)$ might be caused by a filamentary ``internal structure'' of gallium crystallites. There is no diamagnetism at ${T}_{1}.$ The magnetic transition temperature ${T}_{M}$ at 3, 4, 5, 6, and 7 T are measured; for all the cases, ${T}_{M}<{T}_{2}.$