Improved Device Characteristics Research Articles

Investigation of high-detectivity self-powered photodetectors of Rubrene/Bi2Se3 hybrid Van der Waals heterojunction

This paper investigates the Vander Waals heterostructure of organic rubrene and topological insulator Bi2Se3 with an atomically abrupt interface with exciting applications in electronic and optoelectronic devices. This organic/inorganic heterostructure (OIH) was prepared using a simple two-step physical vapor deposition process; based on this hybrid structure, a self-powered photodetector was then constructed. The Dirac surface state at the heterointerface enhances the splitting and transferring of photo-generated carriers, resulting in improved device characteristics. Under 1064 nm, the prepared photodetectors demonstrated a maximum responsivity (6.37 A/W), a high detectivity (3.42 × 1010 Jones), and ultrafast photoresponse speeds with rise time (1.17 µs) and decay time (1.59 µs), respectively. These promising results suggest that these PDs can be used in various photodetection applications and may lead to developing new devices.

Comparative Analysis of 50 MeV Li3+ and 100 MeV O7+ Ion Beam Induced Electrical Modifications in Silicon Photodetectors

This article investigates the impact of 100 MeV O7+ and 50 MeV Li3+ ions on Silicon Photodetectors, focusing on their electrical characteristics with similar Sn/Se ratios. Elevated ion fluences led to a significant rise in the ideality factor “n”, indicating the presence of Generation-Recombination (G-R) current due to introduced defects, especially those with deep energy levels in the forbidden gap acting as G-R centers. While Ideality factor (n) values decreased for oxygen ions at maximum fluence, they increased for lithium ions, reflecting consistent patterns in series resistance (Rs) and reverse leakage current (IR), attributed to ion-induced defects. Oxygen ions showed a monotonic variation in Rs, whereas lithium ions exhibited a slight reduction at maximum fluence, possibly due to defect annihilation. Despite differing Se values, 50 MeV Li3+ ions demonstrated improved device characteristics, suggesting potential defect annihilation. The ratio of Sn to Se indicated comparable damage contributions from nuclear and electronic energy. Additionally, TRIM computations revealed non-uniform damage distributions, with ions penetrating deep into the substrate, away from the n+/p junction.

Fabrication Process of MicroLED Film for Achieving Vertical Current Injection Using Transfer Technology

Flexible light‐emitting devices have attracted attention as a novel bio‐interface connecting living tissues with electronics due to their high brightness, low power consumption, and durability in humid environments. Introduction of vertically current‐injected micro‐light‐emitting diodes (MicroLEDs) into this film can enhance the MicroLED effective area and improve device characteristics. In this study, the MicroLED transfer technology onto conductive materials is investigated. The feasibility of batch transferring MicroLEDs onto a conductive polymer is demonstrated by PEDOT:PSS layer. For non‐Ohmic characteristics between n‐GaN and PEDOT:PSS, a backside‐open MicroLED hollow structure is proposed, enabling the formation of Ti/Au electrodes on the backside of MicroLED. By transferring the fabricated vertically current‐injected MicroLEDs onto the PEDOT:PSS layer, a flexible vertically current‐injected LED film is achieved, observing uniform blue light emission. The developed MicroLED film holds promise as a new neuroscience tool for targeting specific areas of the brain with light.

GaN-on-Si micro resonant-cavity light-emitting diodes with dielectric and metal mirrors

Micro-LED is a new type of display technology. Its advantages are high resolution, high brightness, long life, low power consumption and so on. However, due to the reduction in size, the proportion of surface damage increases, resulting in a decrease in device performance, which affects the development of Micro-LEDs. In this paper, ion implantation technology and resonant cavity structure are used to reduce device sidewall damage and improve device characteristics. The photoelectric properties of GaN-based blue micro light emitting resonant cavity diodes were studied. Pixel-to-pixel isolation is achieved by fluorine ion implantation. The resonant cavity structure is fabricated by wafer bonding technique. The research shows that the electrical characteristics of the device have realized good stability. Under medium reflectivity conditions, the device enhancement effect is best when the reflectivity of the top mirror is 40%. With the decrease of the size, the enhancement of optical characteristics weakens due to the size effect, and the spontaneous emission intensity of the 10 μm device increases by 212.6%. The FWHM of devices with different sizes narrowed by about 10 nm. The stability of the device peak wavelength and full width at half maximum is improved. Therefore, this paper provides research value for the application of resonant cavity structures in Micro-LEDs.

The improvement of Schottky barrier diodes fabricated only by B ion implantation doping accomplished by refinement of the electrode structure

In this study, we fabricated p-type diamond Schottky barrier diodes (SBD) and performed selective B doping for the p-type channel and Ohmic region by double ion implantation. SBD were redesigned in the configuration and shape of Ohmic and Schottky electrodes to improve device characteristics. The fabricated device exhibited a rectification ratio of approximately 2400 because of decreasing the parasitic resistance to 2.7 × 107 Ω and the ideality factor to 2.7. The Schottky barrier height was obtained to be 1.04 eV. It is indicated that the diamond SBD fabricated only by B ion implantation is improved by refinement of the electrode structure.

High-performance photodetector arrays for near-infrared spectral sensing

Spectral sensing is an emerging field driven by the need for fast and non-invasive methods for the chemical analysis of materials in agri-food, healthcare, and industrial applications. We demonstrate a near-infrared spectral sensor, based on a scalable fabrication process and combining high responsivity, narrow linewidth, and low noise. The sensor consists of 16 resonant-cavity-enhanced photodetectors, each showing a unique spectral response consisting of narrow peaks. The spectral sensor thereby covers the wavelength range between 890 and 1650 nm, where organic materials show relevant spectral features from first and second overtones. For the fabrication of the detector arrays, we propose a simple and scalable fabrication approach that yields largely improved device characteristics with respect to the grey-scale electron-beam lithography process reported earlier. Through a series of five optical lithography steps, tuning layers of silicon nitride are deposited stepwise to obtain 16 different thicknesses and reduced surface roughness. With this novel fabrication approach, the obtained photodetectors achieve an average peak linewidth of 55 nm, a maximum peak responsivity of 0.3 A/W, and high suppression of the non-resonant background. We also demonstrate the impact of these improvements on the sensing performance for two relevant problems through an experiment and a set of simulations. With lateral dimensions of ∼1.4 × 1.4 mm2, the proposed photodetector array can be the key to robust, portable, and low-cost sensing instrumentation for on-site material analysis in various application fields.

Surface states passivation in GaN single crystal by ruthenium solution

GaN single crystal samples were cleaned and passivated with ruthenium solution. Photoluminescence (PL) and scanning tunneling spectroscopy (STS) were used to characterize the passivated surface. PL study showed an effective increase in band edge emission after passivation. I–V (current–voltage) and dI/dV (differential conductance) spectra measurements of GaN single crystal samples using ambient STS revealed the variation in the density of states (local), shifting of Fermi-level position, and onset/offset of valence and conduction bands. We found a significant change in I–V and dI/dV measurements after surface treatment, which means modification in surface electronic properties. The ruthenium solvent passivates the surface states, converting the surface into a highly ordered and air oxidation-resistant state. Finally, Ni/GaN Schottky diodes were fabricated to demonstrate improved device characteristics after passivation, which was a direct indication of improved GaN interface due to ruthenium passivation.

Linear conductance update improvement of CMOS-compatible second-order memristors for fast and energy-efficient training of a neural network using a memristor crossbar array.

Memristors are two-terminal memory devices that can change the conductance state and store analog values. Thanks to their simple structure, suitability for high-density integration, and non-volatile characteristics, memristors have been intensively studied as synapses in artificial neural network systems. Memristive synapses in neural networks have theoretically better energy efficiency compared with conventional von Neumann computing processors. However, memristor crossbar array-based neural networks usually suffer from low accuracy because of the non-ideal factors of memristors such as non-linearity and asymmetry, which prevent weights from being programmed to their targeted values. In this article, the improvement in linearity and symmetry of pulse update of a fully CMOS-compatible HfO2-based memristor is discussed, by using a second-order memristor effect with a heating pulse and a voltage divider composed of a series resistor and two diodes. We also demonstrate that the improved device characteristics enable energy-efficient and fast training of a memristor crossbar array-based neural network with high accuracy through a realistic model-based simulation. By improving the memristor device's linearity and symmetry, our results open up the possibility of a trainable memristor crossbar array-based neural network system that possesses great energy efficiency, high area efficiency, and high accuracy at the same time.

Incidence and clinical impact of tachyarrhythmic events following transcatheter aortic valve replacement: A review.

Transcatheter aortic valve replacement (TAVR) is well established for treating severe symptomatic aortic stenosis. Whereas broad information on the epidemiology, clinical implications, and management of bradyarrhythmias after TAVR is available, data about tachyarrhythmic events remain scarce. Despite the progressively lower risk profile of TAVR patients and the improvement in device characteristics and operator skills, approximately 10% of patients develop new-onset atrial fibrillation (NOAF) after TAVR. The proportion of patients in whom NOAF actually corresponds to previously undiagnosed silent atrial fibrillation (AF) has not been properly determined. The transapical approach, the need for pre- or post- balloon dilation, and the presence of periprocedural complications have been associated with a higher risk of NOAF. Older age, left atrial volume, or worse functional class are patient-derived risk factors shared with preprocedural AF. NOAF after TAVR has been associated with poorer survival and a higher incidence of cerebrovascular events. However, patient management differs markedly among different centers, especially with regard to anticoagulation in patients with short-duration AF episodes detected in the periprocedural setting and in cases of silent NOAF detected during continuous electrocardiographic (ECG) monitoring. Evidence about ventricular arrhythmias is even more scarce than for AF. Some case reports of sudden cardiac death after TAVR in patients with a pacemaker have identified ventricular tachycardia or ventricular fibrillation in device interrogation. TAVR has been shown to reduce the arrhythmic burden, but a significant proportion of patients (16%) present with complex premature ventricular complex arrhythmias within the year after TAVR. Whether these events are related to poorer outcomes is unknown. Continuous ECG monitoring after TAVR may help describe the frequency, risk factors, and prognostic implications of tachyarrhythmias in this population.

Recent Advances in Synaptic Nonvolatile Memory Devices and Compensating Architectural and Algorithmic Methods Toward Fully Integrated Neuromorphic Chips

AbstractNonvolatile memory (NVM)‐based neuromorphic computing has been attracting considerable attention from academia and the industry. Although it is not completely successful yet, remarkable achievements have been reported pertaining to synaptic devices that can leverage NVM capable of storing multiple states. The analog synaptic devices performing computation similar to biological nerve systems are crucial in energy‐efficient analog neuromorphic computing systems. To use NVM as an analog synaptic device, researchers focus on improving device characteristics. Among various characteristics, the most challenging one is linearity and symmetry of synaptic weight update that is required for on‐chip training. In this regard, this review paper discusses recent synaptic device improvements focusing on novel schemes tailored for each NVM device to improve the linearity and symmetry. In addition to device‐level studies, recent research achievements are reviewed expanded up to chip‐level studies because in realizing neuromorphic hardware systems beyond a single synaptic device, several considerations and requirements are needed to confirm for high‐level design, and accordingly, cooptimize among synaptic devices, synapse arrays, electrical circuits, neural networks, algorithms, and implementation. Also, this review introduces various circuit and algorithmic approaches to compensate for the non‐ideality of the analog synaptic device.

Improvement in Electrical Stability of a-IGZO TFTs Using Thinner Dual-Layer Dielectric Film

This study investigates the effect of gate insulators on thin-film transistors (TFTs) using an amorphous InGaZnO4 (a-IGZO) channel layer. TFTs with single-layer Ta2O5 and dual-layer Ta2O5/SiO2 gate insulators were fabricated on a glass substrate. An evaluation of the insulating film using the MIM (Metal-Insulator-Metal) structure confirmed its electrical characteristics. Microscopic imaging showed that the dual-layer Ta2O5/SiO2 dielectric significantly improved surface characteristics. A reduction in the leakage current, better on/off ratios, and a decreased subthreshold swing (SS) compared to a single-layer Ta2O5 dielectric were reported. The dual-layer insulator composed of SiO2/Ta2O5 was highly effective in improving device characteristics.

A charge transfer framework that describes supramolecular interactions governing structure and properties of 2D perovskites

The elucidation of structure-to-function relationships for two-dimensional (2D) hybrid perovskites remains a primary challenge for engineering efficient perovskite-based devices. By combining insights from theory and experiment, we describe the introduction of bifunctional ligands that are capable of making strong hydrogen bonds within the organic bilayer. We find that stronger intermolecular interactions draw charge away from the perovskite layers, and we have formulated a simple and intuitive computational descriptor, the charge separation descriptor (CSD), that accurately describes the relationship between the Pb-I-Pb angle, band gap, and in-plane charge transport with the strength of these interactions. A higher CSD value correlates to less distortion of the Pb-I-Pb angle, a reduced band gap, and higher in-plane mobility of the perovskite. These improved material properties result in improved device characteristics of the resulting solar cells.

Improved Ion/Ioff Current Ratio and Dynamic Resistance of a p-GaN High-Electron-Mobility Transistor Using an Al0.5GaN Etch-Stop Layer.

In this study, we investigated enhance mode (E-mode) p-GaN/AlGaN/GaN high-electron-mobility transistors (HEMTs) with an Al0.5GaN etch-stop layer. Compared with an AlN etch-stop layer, the Al0.5GaN etch-stop layer not only reduced lattice defects but engendered improved DC performance in the device; this can be attributed to the lattice match between the layer and substrate. The results revealed that the Al0.5GaN etch-stop layer could reduce dislocation by 37.5% and improve device characteristics. Compared with the device with the AlN etch-stop layer, the p-GaN HEMT with the Al0.5GaN etch-stop layer achieved a higher drain current on/off ratio (2.47 × 107), a lower gate leakage current (1.55 × 10−5 A/mm), and a lower on-state resistance (21.65 Ω·mm); moreover, its dynamic RON value was reduced to 1.69 (from 2.26).

Impact of Molybdenum Dichalcogenides on the Active and Hole-Transport Layers for Perovskite Solar Cells, X-Ray Detectors, and Photodetectors.

The interface architectures of inorganic-organic halide perovskite-based devices play key roles in achieving high performances with these devices. Indeed, the perovskite layer is essential for synergistic interactions with the other practical modules of these devices, such as the hole-/electron-transfer layers. In this work, a heterostructure geometry comprising transition-metal dichalcogenides (TMDs) of molybdenum dichalcogenides (MoX2 = MoS2 , MoSe2 , and MoTe2 ) and perovskite- or hole-transfer layers is prepared to achieve improved device characteristics of perovskite solar cells (PSCs), X-ray detectors, and photodetectors. A superior efficiency of 11.36% is realized for the active layer with MoTe2 in the PSC device. Moreover, X-ray detectors using modulated MoTe2 nanostructures in the active layers achieve 296 nA cm-2 , 3.12mA (Gy cm2 )-1 and 3.32 × 10-4 cm2 V-1 s-1 of collected current density, sensitivity, and mobility, respectively. The fabricated photodetector produces a high photoresponsivity of 956mA W-1 for a visible light source, with an excellent external quantum efficiency of 160% for the perovskite layer containing MoSe2 nanostructures. Density functional theory calculations are made for pure and MoX2 doped perovskites' geometrical, density of states and optical properties variations evidently. Thus, the present study paves the way for using perovskite-based devices modified by TMDs to develop highly efficient semiconductor devices.

Improved device performance of recessed-gate AlGaN/GaN HEMTs by using in-situ N2O radical treatment

The N2O radicals in-situ treatment on gate region has been employed to improve device performance of recessed-gate AlGaN/GaN high-electron-mobility transistors (HEMTs). The samples after gate recess etching were treated by N2O radicals without physical bombardment. After in-situ treatment (IST) processing, the gate leakage currents decreased by more than one order of magnitude compared to the sample without IST. The fabricated HEMTs with the IST process show a low reverse gate current of 10−9 A/mm, high on/off current ratio of 108, and high f T × L g of 13.44 GHz⋅μm. A transmission electron microscope (TEM) imaging illustrates an oxide layer with a thickness of 1.8 nm exists at the AlGaN surface. X-ray photoelectron spectroscopy (XPS) measurement shows that the content of the Al–O and Ga–O bonds elevated after IST, indicating that the Al–N and Ga–N bonds on the AlGaN surface were broken and meanwhile the Al–O and Ga–O bonds formed. The oxide formed by a chemical reaction between radicals and the surface of the AlGaN barrier layer is responsible for improved device characteristics.

Heterogeneously integrated membrane III-V compound semiconductor devices with silicon photonics platform

Silicon photonics is a key technology for constructing large-scale photonic integrated circuits (PICs) because it enables large-scale wafer processes with high uniformity and quality. To further improve device characteristics, heterogeneous integration of III-V compound semiconductors that provide optical gain, a high modulation efficiency, and optical non-linearity is desired. This paper describes the heterogeneous integration of membrane III-V compound semiconductor photonic devices that have a similar structure including thickness and refractive index. These devices provide efficient optical coupling with a Si waveguide using a simple taper waveguide structure. If the total thickness of the film structure is designed to be less than the critical thickness (calculated to be 430 nm for fabrication conditions such as bonding and growth temperatures), high-quality epitaxial layers can be grown on a thin InP layer directly bonded to the Si substrate. Therefore, regrowth techniques are employed on bonded InP layer on SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /Si substrate. We fabricate two kinds of laser-integrated Mach-Zehnder modulators using epitaxial regrowth on Si substrates. One uses Si phase modulators, and the other uses InP-based modulators. A micro-transfer-printing technology is also important when the number of III-V devices is relatively small. Furthermore, the micro-transfer-printing technology enables devices to be selected that meet the required characteristics before integration. For this purpose, we try to integrate a membrane laser on a Si substrate, in which the membrane laser is fabricated on InP substrate. The device shows a threshold current of 0.8 mA when the active region length is 140 μm. Finally, we briefly describe a transmission module, in which directly modulated membrane lasers and electronic drivers are integrated by flip-chip bonding through Au bumps. To reduce power consumption, it is important to design driver circuits that incorporate semiconductor lasers as electronic components. We demonstrate a 2-channel 53-Gbit/s 4-level pulse amplitude modulation (PAM4) transmitter front-end consisting of a 2-channel PAM4 shunt laser driver and 2-channel O-band directly modulated membrane lasers. The total power consumption is only 60.7 mW, resulting in 0.57 mW/Gbit/s.

Improving Device Characteristics of Dual-Gate IGZO Thin-Film Transistors with Ar-O2 Mixed Plasma Treatment and Rapid Thermal Annealing.

In this study, high-performance indium–gallium–zinc oxide thin-film transistors (IGZO TFTs) with a dual-gate (DG) structure were manufactured using plasma treatment and rapid thermal annealing (RTA). Atomic force microscopy measurements showed that the surface roughness decreased upon increasing the O2 ratio from 16% to 33% in the argon–oxygen plasma treatment mixture. Hall measurement results showed that both the thin-film resistivity and carrier Hall mobility of the Ar–O2 plasma–treated IGZO thin films increased with the reduction of the carrier concentration caused by the decrease in the oxygen vacancy density; this was also verified using X-ray photoelectron spectroscopy measurements. IGZO thin films treated with Ar–O2 plasma were used as channel layers for fabricating DG TFT devices. These DG IGZO TFT devices were subjected to RTA at 100 °C–300 °C for improving the device characteristics; the field-effect mobility, subthreshold swing, and ION/IOFF current ratio of the 33% O2 plasma–treated DG TFT devices improved to 58.8 cm2/V·s, 0.12 V/decade, and 5.46 × 108, respectively. Long-term device stability reliability tests of the DG IGZO TFTs revealed that the threshold voltage was highly stable.

Reduction in area‐specific on‐resistance with vertical stepped doped high‐kVDMOS

AbstractIn this article, a novel high‐k VDMOS with vertical stepped doping profile is presented. It possesses lower area specific on‐resistance () in comparing to the conventional structure while the blocking capacity remains unaltered. Hence, the trade‐off between the breakdown voltage andis optimized as well as area specific on‐resistance is reduced from 68% to 27%. The proposed structure shows analogous behavior as conventional structure with improved current driving capability from 42% to 24%. Thus, it exhibits improved device characteristics and possesses enhanced figure of merits than conventional structure.

Solution-processed Cd-substituted CZTS nanocrystals for sensitized liquid junction solar cells

The Earth-abundant kesterite Cu2ZnSnS4 (CZTS) exhibits outstanding structural, optical, and electronic properties for a wide range of optoelectronic applications. However, the efficiency of CZTS thin-film solar cells is limited due to a range of factors, including electronic disorder, secondary phases, and the presence of anti-site defects, which is a key factor limiting the Voc. The complete substitution of Zn lattice sites in CZTS nanocrystals (NCs) with Cd atoms offers a promising approach to overcome several of these intrinsic limitations. Herein, we investigate the effects of substituting Cd2+ into Zn2+ lattice sites in CZTS NCs through a facile solution-based method. The structural, morphological, optoelectronic, and power conversion efficiencies (PCEs) of the NCs synthesized have been systematically characterized using various experimental techniques, and the results are corroborated by first-principles density functional theory (DFT) calculations. The successful substitution of Zn by Cd is demonstrated to induce a structural transformation from the kesterite phase to the stannite phase, which results in the bandgap reduction from 1.51 eV (kesterite) to 1.1 eV (stannite), which is closer to the optimum bandgap value for outdoor photovoltaic applications. Furthermore, the PCE of the novel Cd-substituted liquid junction solar cell underwent a four-fold increase, reaching 1.1%. These results highlight the importance of substitutional doping strategies in optimizing existing CZTS-based materials to achieve improved device characteristics.

Significant Performance Improvement in n-Channel Organic Field-Effect Transistors with C60 :C70 Co-Crystals Induced by Poly(2-ethyl-2-oxazoline) Nanodots.

Solution-processed organic field-effect transistors (OFETs) have attracted great interest due to their potential as logic devices for bendable and flexible electronics. In relation to n-channel structures, soluble fullerene semiconductors have been widely studied. However, they have not yet met the essential requirements for commercialization, primarily because of low charge carrier mobility, immature large-scale fabrication processes, and insufficient long-term operational stability. Interfacial engineering of the carrier-injecting source/drain (S/D) electrodes has been proposed as an effective approach to improve charge injection, leading also to overall improved device characteristics. Here, it is demonstrated that a non-conjugated neutral dipolar polymer, poly(2-ethyl-2-oxazoline) (PEOz), formed as a nanodot structure on the S/D electrodes, enhances electron mobility in n-channel OFETs using a range of soluble fullerenes. Overall performance is especially notable for (C60 -Ih )[5,6]fullerene (C60 ) and (C70 -D5h(6) )[5,6]fullerene (C70 ) blend films, with an increase from 0.1 to 2.1 cm2 V-1 s-1 . The high relative mobility and eighteen-fold improvement are attributed not only to the anticipated reduction in S/D electrode work function but also to the beneficial effects of PEOz on the formation of a face-centered-cubic C60 :C70 co-crystal structure within the blend films.