Abstract
AbstractIn this article, a novel high‐k VDMOS with vertical stepped doping profile is presented. It possesses lower area specific on‐resistance () in comparing to the conventional structure while the blocking capacity remains unaltered. Hence, the trade‐off between the breakdown voltage andis optimized as well as area specific on‐resistance is reduced from 68% to 27%. The proposed structure shows analogous behavior as conventional structure with improved current driving capability from 42% to 24%. Thus, it exhibits improved device characteristics and possesses enhanced figure of merits than conventional structure.
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