Implantation Energy Research Articles

(Invited) A CMOS Inverter Technology Constructed with T-Shaped Gate Poly-Si Thin-Film Transistors

In this work, we report a novel CMOS TFT fabrication scheme with the poly-Si TFTs featuring a T-shaped gate (T-gate), air spacers, and a self-aligned lightly doped drain (LDD). The formation of the n+ poly-Si T-gate is based on a unique process we developed recently [1]. Furthermore, by appropriately adjusting the implantation energy and dosage, we can achieve both LDD and heavily doped source/drain (S/D) regions with a single implantation process [2]. After the transistors are fabricated, the deposited oxide layer for passivation presses down on the wings of the T-gates, causing them to droop and naturally form air spacers on both sides of the gate electrodes. This can help reduce parasitic capacitance between the gate and S/D. As expected, the implementation of LDD can reduce the off-state leakage current for both n- and p-channel poly-Si TFTs as compared to the counterparts with the conventional gated configuration and without LDD. In the meantime, the n-channel T-gate poly-Si TFTs with LDD also exhibit a higher on-current than the conventional ones, thanks to the greatly shortened gated length [2]. Nonetheless, the on-current of the p-channel T-gate poly-Si TFTs with LDD is lowered despite the shorter gate length. Details about the mechanisms are explored in this work. Moreover, using n+ poly-Si gates increases the threshold voltage (Vth) of p-channel TFTs. This issue can be addressed by adjusting channel doping. Using this approach, we have successfully fabricated CMOS inverters. Figure 1 illustrates the voltage transfer characteristics (VTC) of fabricated CMOS inverters operated at 3V, confirming full-swing switching. Additionally, adjusting the channel doping of the p-channel TFT effectively tunes the switching voltage, as shown in Fig. 1.

Surface and near-surface positron annihilation spectroscopy at very low positron energy

We present a monoenergetic positron beam specifically tailored to the needs of (near-) surface positron annihilation spectroscopy. The Setup for LOw-energy Positron Experiments (SLOPE) comprises a high-activity 22Na source, a tungsten moderator, electrostatic extraction and acceleration, magnetic beam guidance, as well as an analysis chamber with a movable sample holder and a γ-ray detection system. The tungsten moderator foil, biased between 0 and 30 V, in combination with the HV-biasable sample holder, enables positron implantation energies between 3 eV and 40 keV. At low energies (< 20 eV), the count rate typically amounts to 4400 counts per second, and the beam diameter is smaller than (12±3) mm. We conduct phase space simulations of the positron beam using COMSOL Multiphysics® to characterize the beam properties and compare the findings with the experimentally determined energy-dependent beam diameter. To showcase the capabilities of SLOPE, we perform studies of positronium (Ps) formation on boehmite and depth-resolved coincidence Doppler-broadening spectroscopy (CDBS) of copper. In particular, the Ps formation at the hydrogen-terminated surface of boehmite is found to be maximum at a positron implantation energy of 10 eV. The range of positron energies for which we observe Ps formation agrees with the hydrogen ionization energy.

Synergy of high-intensity chromium ion implantation and ion beam energy impact on the zirconium alloy surface

The peculiarities and modes of material modification with high-intensity, high-power density ion beams on the irradiated surface are studied for the first time. Chromium ions are implanted into a zirconium alloy using a 25 kW/cm2, 450 μs beam at the pulse repetition rates within 8–35 pps. Every high-energy ion pulse impact is followed by ultrafast cooling of the surface due to heat removal into the target material. Three modes are studied at the temperatures of 580, 700, and 900 °C with an additional pulsed heating. An increase in the average target temperature from 580 to 700 °C within 1 h at the same pulse power density allows increasing the depth of chromium ion alloying from 1.5 to more than 7 μm. The use of ultrafast cooling of the Zr1%Nb alloy surface offers a grain size reduction from a few μm to approximately 50–250 nm, without any microstructural changes throughout the sample volume. An inhomogeneous chromium ion distribution over the target surface and depth is observed.

Dynamic annealing assisted near-surface structural and bond stabilization in high-temperature low-energy N2+ implanted diamond.

Nitrogen-rich ultra-thin (1-2nm thick) layers in diamond produced by high-temperature nitrogen ion (N2+) implantation at low N2+ energies studied by in situ x-ray photoelectron spectroscopy are reported. Nitrogen bonding at the subsurface region and its thermal stability, as well as structural defects in polycrystalline diamond (PCD) implanted with 200, 500, and 800eV N2+ at room temperature (RT) and 600 °C at an ion dose of 4.5 × 1014 ions/cm2, are investigated. Implantation at RT leads to nitrogen bonding at interstitial and substitutional sites in the diamond lattice, which is associated with the C-N/C=N bond, lower intensity of the C≡N (nitrile-like) component associated with nitrogen bonding with carbon defects, and quaternary nitrogen. The relative composition of these chemical states varies with implantation energy, temperature, and post-implantation annealing temperature. Upon annealing the RT implanted layers above 500-600 °C, the interstitial nitrogen converts to substitutional nitrogen. This process competes with nitrogen desorption. The thermal stability of nitrogen increases with implantation energy. Implantation at 600 °C at 800eV resulted in a significantly lower concentration of nitrile-like bonds and a lower density of structural defects compared to RT implantation at the same energy. These effects are associated with dynamic annealing, which becomes more significant at higher implantation energies. Upon high-temperature implantation, nitrogen mostly populates directly substitutional sites. Nitrogen implantation at low energy and high temperature may be a viable way to nitride diamond surfaces with reduced density of defects where nitrogen is selectively bonded to substitutional sites. Finally, a comparison between nitrogen implantation into PCD and Diamond (100) [Di(100)] surfaces is presented.

Taguchi Method Statistical Analysis on Characterization and Optimization of 18-nm Double Gate MOSFETs

A bi-layer graphene with a multigate structure was intensified and analysed on an 18-nm Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) device to obtain an optimal performance parameter. The device has a gate structure made of Titanium Dioxide (TiO2) that serves as a high-k material and a metal gate made of Tungsten Silicide (WSix). The Silvaco TCAD Software which are ATHENA and ATLAS modules were used to enhance the fabrication process of virtual devices and to verify the electrical properties of a specific device. According to the International Technology Roadmap Semiconductor (ITRS) specifications of 0.179 V ± 12.7% for threshold voltage (VTH) and 20 nA/m for leakage current (ILEAK), the Taguchi L9 orthogonal array strategy was used to improve the device process parameters for optimum VTH and ILEAK. For the NMOS device, the process parameter of VTH Adjust Implant Dose was used as the dominant factor while Source/Drain (S/D) Implant Energy was used as the adjustment factor whereby for PMOS device, S/D Implant Energy was the dominant factor while S/D Implant Tilt was the adjustment factor in order to achieve a robust design through the Taguchi method implementation. The percentage affecting the process parameter is then applied to the results of the signal to noise ratio (SNR) of Nominal-the-best (NTB) for VTH and Smaller-the-better (STB) for ILEAK.

Role of Piezoelectricity in Disease Diagnosis and Treatment: A Review.

Because of their unique electromechanical coupling response, piezoelectric smart biomaterials demonstrated distinctive capability toward effective, efficient, and quick diagnosis and treatment of a wide range of diseases. Such materials have potentiality to be utilized as wireless therapeutic methods with ultrasonic stimulation, which can be used as self-powered biomedical devices. An emerging advancement in the realm of personalized healthcare involves the utilization of piezoelectric biosensors for a range of therapeutic diagnosis such as diverse physiological signals in the human body, viruses, pathogens, and diseases like neurodegenerative ones, cancer, etc. The combination of piezoelectric nanoparticles with ultrasound has been established as a promising approach in sonodynamic therapy and piezocatalytic therapeutics and provides appealing alternatives for noninvasive treatments for cancer, chronic wounds, neurological diseases, etc. Innovations in implantable medical devices (IMDs), such as implantable piezoelectric energy generator (iPEG), offer significant advantages in improving physiological functioning and ability to power a cardiac pacemaker and restore the heart function. This comprehensive review critically evaluates the role of piezoelectricity in disease diagnosis and treatment, highlighting the implication of piezoelectric smart biomaterials for biomedical devices. It also discusses the potential of piezoelectric materials in healthcare monitoring, tissue engineering, and other medical applications while emphasizing future trends and challenges in the field.

Calculation of Dose Perturbation in Radiotherapy of Head and Neck Tumors Due to the Presence of Dental Implants: A Monte Carlo Study

Purpose: The presence of a dental implant across the irradiation beam has the potential to perturb the dose distribution. In this study, the effect of different commercial dental implants on dose distribution was investigated in electron beam therapy. Materials and Methods: The Varian 2100 C/D linear accelerator (Linac) head was modeled precisely with proper components for electron mode (6 and 9 MeV) by MCNPX 2.6.1 and was benchmarked according to the International Atomic Energy Agency (IAEA) protocol, TRS -398. Dose distribution was calculated for Six different implant materials, including Titanium, Titanium alloy, Zirconia (Y-TZP), Zirconium oxide, Alumina, and PolyetherEtherKetone (PEEK), and for Four different scenarios. Results: The highest and lowest increasing doses occurred for Y-TZP (114.44% and 108.69% for 6 and 9 MeV, respectively) and PEEK (104.85% and 98.84% for 6 and 9 MeV, respectively) directly in front of the implant, respectively. By removing an implant from the jaw, an increasing dose was not seen, but an increasing dose occurred behind its depths in the bone region (31.81 %). Conclusion: The amount of dose perturbation due to the dental implant's presence depends on the beam energy, mass density, and atomic numbers of implants. Maximum and minimum increased doses were estimated for Y-TZP and PEEK implants, respectively. Considering the correction factors due to the presence of high density and atomic number dental implants are essential to estimate the accurate dose delivery in radiotherapy with electron beams.

Weakening of olivine by hydrogen implantation: Results of nano-indentation tests and some applications to planetary materials

Sticking of the dust grains is a critical step in planet formation. To investigate the solar wind effect on the dust mechanical properties, we conducted hydrogen implantation experiments (using beam energies of 10 keV, 20 keV and 50 keV) on olivine single crystals and determined the elastic modulus and the hardness as a function of depth by nano-indentation tests. The near surface regions of the samples (to ∼600 nm) show a substantial decrease in both hardness (up to ∼85%) and modulus (up to ∼74%), indicating a large degree of mechanical weakening. The depth extent of the weakened region increases with implantation energy while the degree of weakening decreases with implantation energy. TEM (transmission electron microscopy) observations of the samples show that the depth where damaged region occurs increases with the implantation energy used. The results are interpreted based on the physics of ion-solid interaction during implantation. According to our results, we expect that olivine-like dust exposed to solar wind would display a similar mechanical weakening in the surface (∼ 74% reduction in elastic modulus, ∼ 85% reduction in hardness). Mechanical weakening by solar wind implantation would enhance the sticking of the dust in the disk if dust have been effectively exposed to the solar wind. The present results are also applied to interpret observations of some planetary materials.

Hyperdoping of germanium with argon toward strain-doping-induced indirect-to-direct bandgap transition in Ge

The first-principles calculations have recently shown that implanting sufficient noble gas atoms into germanium (Ge) can expand its lattice to achieve the desired tensile strain for indirect-to-direct bandgap transition to develop the on-chip high-efficient light emitter. Here, to experimentally prove this strain-doping concept, we implant argon (Ar) ions into Ge and then recrystallize the Ar-doped amorphous Ge (a-Ge) layer using nanosecond laser annealing (NLA) and furnace thermal annealing (FTA), respectively. The NLA effectively recrystallizes the 12 nm thick a-Ge layer with minimal loss of Ar dopants, while FTA fails to fully recrystallize it and results in significant loss of Ar dopants. The regrown Ge layer with Ar concentration above the critical value (0.8%) for bandgap transition is 3.8 nm thick, making it a challenge to distinguish the photoluminescence signal of strain-doped layer from the substrate. To overcome this, increasing the implantation energy and adding a capping layer may be necessary to further prevent Ar loss and achieve a strain-doped layer with sufficient depth. These findings provide promising view of the strain-doping concept for direct-bandgap emission from Ge.

Simulation and experimental study of InN nanoparticles synthesized by ion implantation technology.

In order to synthesize InN nanoparticles (NPs), we have simulated the co-implantation of indium (In) and nitrogen (N) ions on silicon (Si) and silicon oxide (SiO2) substrates with flat-top profiles. The choice of flat-top profile is to increase the possibility of creating homogeneous zone with well-distributed InN nanoparticles over the entire implanted layer. In this view and to obtain these flat-top profiles, we must do several implantations with different doses and energies optimized by our program. The simulation results performed on a silicon substrate < 111 > , give an average dose of 4.30 × 1016 at./cm2 and the implantation energies were In (10, 46, and 180 keV) and N (13 and 35 keV). But for the SiO2 substrate, the total mean dose is about 5.20 × 1016at./cm2 for each Indium and nitrogen ion. The respective implantation energies were In (23, 63, and 120 keV) and N (12 and 28 keV) in an average depth of approximately 100 nm. The implantations were performed in a 206-nm-thick (SiO2) layer thermally grown on < 100 > silicon. Subsequent thermal treatments (500-900°C) lead to the formation of nanoparticles precipitates of the compound semiconductor (InN) and to cure the oxide defects during different periods of time. To verify that indium (In) and nitrogen (N) ions were located according to flat curves, we used RBS technical and study the formation (InN) stoichiometric compound several techniques, were used such as X-ray diffraction, UV-visible-IR, and photoluminescence (PL) spectroscopy. The simulated profiles have been chosen with the aim that the implanted element not exceeding 5-10 at %maximum concentration for each species. We have elaborated our program to simulate these profiles using data as input values from SRIM2008 code taking into account the sputtering factor. The optimal conditions are determined, which are the expected depth impact energies (Rp), the standard deviation (ΔRp) and the sputtering corrosion factor (Fs). Through these results, a simulation program has been created which allows building flat "distribution" curves for ion implantation for each element (In and N), so that each curve is obtained from three Gaussian functions whose values are carefully chosen in relation to the optimal experimental conditions.

In-grown and irradiation-induced Al and N vacancies in 100 keV H+ implanted AlN single crystals

We report positron annihilation results on in-grown and proton-irradiation-induced vacancy defects in AlN single crystals grown by physical vapor transport. The samples were irradiated with 100 keV H+ ions to varying fluences in the range of 5 × 1014 − 2 × 1018 ions cm–2. Doppler broadening of annihilation radiation was recorded in as-grown and irradiated samples with a slow positron beam with varying implantation energy. Doppler results combined with first principles theoretical calculations show that the 100 keV H+ irradiation introduces isolated VAl on the ion track and VN-rich vacancy clusters at the end of the ion range. The results suggest that the excess amount of detected VN originates from a high concentration of in-grown VN. So far, these defects have been considered to be unidentified negative ion-like defects in AlN.

Effect of N plasma immersion ion implantation (N-PIII) on the microstructure and mechanical properties of 8Cr4Mo4V steel

To enhance the surface hardness and wear resistance of 8Cr4Mo4V steel, nitrogen plasma immersion ion implantation (N-PIII) was carried out, under various nominal implantation energies, in this study. Additionally, the microstructure and mechanical properties of the steel were analyzed. The results indicated that the depth of the nitrogen ion-implanted layer escalated with the specified implantation energy, reaching 140 nm for a 50 keV sample. Nitrogen was present within the implanted layer in the martensite lattice as a solute, and also in the form of nitrides along with alloying elements. Moreover, a nanocrystalline layer approximately 40–70 nm thick also formed at the sample surface. As the implantation energy increased, both the surface roughness and residual stress of the sample initially increased before declining, whereas the surface hardness and modulus exhibited a gradual increase. After the 50 keV N-PIII treatment, the surface hardness of the sample increased by 39 %, which caused a remarkable reduction in the friction coefficient, and the wear amount was also reduced by about 40 %. This work systematically establishes the relationship between the surface microstructures, surface morphology, and mechanical properties of implanted 8Cr steel, and significantly improves its surface hardness and wear resistance.

Dual-Site Biomacromolecule Doped Poly(3, 4-Ethylenedioxythiophene) for Bosting Both Anticoagulant and Electrochemical Performances.

Poly(3, 4-ethylenedioxythiophene) (PEDOT) as a new generation of intelligent conductive polymers, is attracting much attention in the field of tissue engineering. However, its water dispersibility, conductivity, and biocompatibility are incompatible, which limit its further development. In this work, biocompatible electrode material of PEDOT doped with sodium sulfonated alginate (SS) which contains two functional groups of sulfonic acid and carboxylic acid per repeat unit of the macromolecule. The as dual-site doping strategy simultaneously boosts anticoagulant and electrochemical performances, for example, good hydrophilicity (water contact angle of 59.40°), well dispersibility (dispersion solution unstratified in 30 days), high conductivity (4.45 S m-1), and enhanced anticoagulant property (extended activated partial thrombin time value of 59.0 s), forming an adjustable PEDOT: biomacromolecule interface; this fills the technical gap of implantable bioelectronics in terms of coagulation and thrombosis risk. At the same time, the assembled all-in-one supercapacitor with anticoagulant properties is prepared by PEDOT: sodium sulfonated alginate as electrode material and sodium alginate hydrogel as electrolyte layer. The dual-site doping strategy provides a new opinion for the design and optimization of functional conductive polymers and its applications in implantable energy storage fields.

In Situ Pulsed Hydrogen Implantation in Atom Probe Tomography.

The investigation of hydrogen in atom probe tomography appears as a relevant challenge due to its low mass, high diffusion coefficient, and presence as a residual gas in vacuum chambers, resulting in multiple complications for atom probe studies. Different solutions were proposed in the literature like ex situ charging coupled with cryotransfer or H charging at high temperature in a separate chamber. Nevertheless, these solutions often faced challenges due to the complex control of specimen temperature during hydrogen charging and subsequent analysis. In this paper, we propose an alternative route for in situ H charging in atom probe derived from a method developed in field ion microscopy. By applying negative voltage nanosecond pulse on the specimen in an atom probe chamber under a low pressure of H2, it is demonstrated that a high dose of H can be implanted in the range 2-20 nm beneath the specimen surface. An atom probe chamber was modified to enable direct negative pulse application with controlled gas pressure, pulse repetition rate, and pulse amplitude. Through electrodynamical simulations, we show that the implantation energy falls within the range 100-1,000 eV and a theoretical depth of implantation was predicted and compared to experiments.

Setting Plasma Immersion Ion Implantation of Ar+ Parameters towards Electroforming-Free and Self-Compliance HfO2-Based Memristive Structures.

Memristive structures are among the most promising options to be components of neuromorphic devices. However, the formation of HfO2-based devices in crossbar arrays requires considerable time since electroforming is a single stochastic operation. In this study, we investigate how Ar+ plasma immersion ion implantation (PI) affects the Pt/HfO2 (4 nm)/HfOXNY (3 nm)/TaN electroforming voltage. The advantage of PI is the simultaneous and uniform processing of the entire wafer. It is thought that Ar+ implantation causes defects to the oxide matrix, with the majority of the oxygen anions being shifted in the direction of the TaN electrode. We demonstrate that it is feasible to reduce the electroforming voltages from 7.1 V to values less than 3 V by carefully selecting the implantation energy. A considerable decrease in the electroforming voltage was achievable at an implantation energy that provided the dispersion of recoils over the whole thickness of the oxide without significantly affecting the HfOXNY/TaN interface. At the same time, Ar+ PI at higher and lower energies did not produce the same significant decrease in the electroforming voltage. It is also possible to obtain self-compliance of current in the structure during electroforming after PI with energy less than 2 keV.

Molecular dynamics simulation study of nitrogen vacancy color centers prepared by carbon ion implantation into diamond

Nitrogen vacancy (NV) color centers in diamond have useful applications in quantum sensing and fluorescent marking. They can be generated experimentally by ion implantation, femtosecond lasers, and chemical vapor deposition. However, there is a lack of studies of the yield of NV color centers at the atomic scale. In the molecular dynamics simulations described in this paper, NV color centers are prepared by ion implantation in diamond with pre-doped nitrogen and subsequent annealing. The differences between the yields of NV color centers produced by implantation of carbon (C) and nitrogen (N) ions, respectively, are investigated. It is found that C-ion implantation gives a greater yield of NV color centers and superior location accuracy. The effects of different pre-doping concentrations (400–1500 ppm) and implantation energies (1.0–3.0 keV) on the NV color center yield are analyzed, and it is shown that a pre-doping concentration of 1000 ppm with 2 keV C-ion implantation can produce a 13% yield of NV color centers after 1600 K annealing for 7.4 ns. Finally, a brief comparison of the NV color center identification methods is presented, and it is found that the error rate of an analysis utilizing the identify diamond structure + coordination analysis method is reduced by about 7% compared with conventional identification methods.

Efficient power generation based-on carbon yarn in coaxial hydrogen peroxide fuel cells

Hydrogen peroxide (H2O2) fuel cells have garnered considerable attention as a promising alternative power source for micro/nano-electronic devices due to their noteworthy attributes, encompassing elevated energy density and reduced environmental footprint. Nevertheless, these fuel cells confront intricate technological intricacies and pragmatic application impediments, prominently encompassing challenges concerning limited stability and modest catalytic efficacy. We demonstrate an innovative methodology employing carbon yarns—comprising carbon nanotubes (CNTs) or carbon fibers (CNFs)—as electrodes, synergistically amalgamated with C60-anchored FeII3 [{CoIII(CN)6}2] and non-precious metal wire in a coaxial H2O2 fuel cell configuration. This augmentation culminates in a notable amplification in fuel cell performance, substantiated by the achievement of an exceptional maximum power density of 15.01 mW cm−2. Furthermore, the open circuit voltage sustain operation for an extended duration of 26 h with minimal decay. We also investigate the impact of varying lengths of fiber fuel cell on performance. Collectively, the work underscores the potential of carbon yarns as promising fiber fuel cell electrodes, poised to enable high-performance and enduring long coaxial H2O2 fuel cells. These advancements hold implications for portable and implantable electronic devices, facilitating sustainable and effective energy solutions.

Effects of ion implantation with arsenic and boron in germanium-tin layers

Ion implantation is widely used in the complementary metal–oxide–semiconductor process, which stimulates to study its role for doping control in rapidly emerging group IV Ge1−xSnx materials. We tested the impact of As and B implantation and of subsequent rapid thermal annealing (RTA) on the damage formation and healing of the Ge1−xSnx lattice. Ion implantation was done at 30, 40, and 150 keV and with various doses. The implantation profiles were confirmed using secondary ion mass spectrometry. X-ray diffraction in combination with Raman and photoluminescence spectroscopies indicated notable crystal damage with the increase of the implantation dose and energy. Significant damage recovery was confirmed after RTA treatment at 300 °C and to a larger extent at 400 °C for a Ge1−xSnx sample with Sn content less than 11%. A GeSn NP diode was fabricated after ion implantation. The device showed rectifying current-voltage characteristics with maximum responsivity and detectivity of 1.29 × 10−3 A/W and 3.0 × 106 cm (Hz)1/2/W at 77 K, respectively.

Orientation-dependent ion-irradiation responses in molybdenum and molybdenum-rhenium alloys

Helium ion-irradiation responses in molybdenum (Mo) and molybdenum-rhenium (Mo-Re) alloys at room temperature were evaluated via micro-pillar compression. Irradiation-induced hardening is closely dependent on orientation in Mo-Re alloys with low Re content, while is weak orientation-dependence on high Re alloys. Irradiated pillars with [100] orientation all shows higher flow stresses than pillars with [110] orientation after yield, which is distinguishing from pillars before irradiation that has been shown in our previous work. High density of dislocation loops and helium bubbles after irradiation at room temperature induces severe hardening in Mo. Voids / small loops induced by irradiation lead to less hardening in Mo-Re alloy than in Mo. No precipitation is observed in all samples, which may be attributed to low irradiated temperature and implantation energy.

Piezoelectric polymer based acoustic energy harvester for implantable medical devices

Wireless implantable devices (WIDs) have the potential to revolutionize biomedical sensing, but their power supplies face significant challenges. Traditional energy transfer methods such as inductive and RF have limitations due to associated tissue losses. This work demonstrates a promising approach to this problem, using a flexible implantable ultrasound energy harvester (IUEH) made of biocompatible Poly (vinylidene fluoride-co-trifluoro ethylene) (P(VDF-TrFe)) free-standing film. Unlike commonly used piezoceramic devices, IUEH can be fabricated using economical solution processing methods such as spin coating. In addition, the PVDF-TrFE Ultrasound energy harvesters are rarely reported in the literature. The device performance of the polymer IUEH was investigated in air, water, and animal meat tissue, and the results show that it can generate a power output of 1.1 mW cm−2 in meat, and 1.4 mW cm−2 in water at 80 kHz. The device fabricated using a free-standing piezoelectric thin film, offers an optimum output that is comparable to other P(VDF-TrFe) based high-frequency devices. Additionally, its flexible design, lower costs, and biocompatibility make it a promising alternative to lead-based devices; thus, offering safety, affordability, and quick customization, while promoting minimally invasive procedures and driving innovation in medical device development.