II-VI Compound Semiconductors Research Articles

On Debye-Waller factors and melting criteria of II-VI and III-V compound semiconductors

Lattice dynamical calculations are presented for the vibrational amplitudes of the constituent atoms in various II-VI and III-V semiconductor compounds as a function of temperature. The calculated results are discussed and compared with the available experimental data. It appears that a lattice theory including anharmonic interactions may provide better insight into the melting criteria.

Simple Tight-Binding Calculation of the Transverse Effective Charges in III-V, II-VI, and IV-IV Compound Semiconductors

A simple tight-binding model is used for a derivation of transverse effective charges in III-V, II-VI, and IV-IV compounds. Introduction of Phillips's spectroscopic parameters into the model provides a very good agreement with experiment. Such a procedure is then justified by detailed comparison with the resonance integrals and the intra-atomic integrals deduced from term values, showing that a very crude tight-binding treatment can yield quantitative values in these systems.

Lumocen effect, luminescence from molecular centers in solids

Electroluminescence in semiconductors is usually produced by recombination of electron-hole pairs either directly or via recombination centers. Another possible mechanism is the excitation of a center from its ground state to an excited state via direct electron impact which subsequently undergoes radiative decay. We report here on a new materials system in which the latter mechanism is dominantly operative and which shows some promise of utilization in electroluminescent devices. The system consists of rare-earth or transition metal ions which are incorporated as fluoride molecules in a II-VI compound semiconductor. Externally injected carriers are heated by an electric field to energies sufficient to put the ion in an excited state upon collision, much like a gas discharge. The creation of electron-hole pairs is not necessary or even desirable.

Crystal-Field Spectra of3dnImpurities in II-VI and III-V Compound Semiconductors

Impurity crystal-field spectra in II-VI and III- V compound semiconductors used to predict unexplored systems spectra impurity crystal-field spectra in II-VI and III-V compound semiconductors used to predict unexplored systems spectra