Ideality Factor Research Articles

Deep-level transient spectroscopy analysis of interface defects in Ce:ZnO/p-Si heterostructures

This study reports the investigation of the effect of cerium (Ce) dopant concentration on defect levels in Ce-doped ZnO/p-type Si (p-Si) heterojunctions (HJs) by deep-level transient spectroscopy (DLTS). Undoped ZnO (uZnO) and Ce-doped ZnO (Ce:ZnO) were synthesized at different molar ratios using the sol–gel method, and n-Ce:ZnO/p-Si heterojunctions were fabricated on p-Si via spin coating. According to energy dispersive x-ray spectroscopy (EDS) data, no foreign atoms are present in the synthesized nanoparticles. A critical observation is that the oxygen content increases with Ce doping. Scanning electron microscopy (SEM) images revealed uniform spherical grains, with a decrease in grain size as Ce dopant concentration increased. X-ray diffraction (XRD) confirmed a hexagonal wurtzite crystal structure for all nanostructures. I–V measurements documented that the structures have a good rectifying behavior and that the structure exhibiting the best diode character is the Ce:ZnO/p-Si heterostructure containing 2 mol% Ce with an ideality factor of 3.36. DLTS revealed that Ce doping deepened defect levels below the conduction band edge (Ec), with trap level positions calculated as Ec − 0.079, Ec − 0.311, Ec − 0.290, and Ec − 0.386 eV for undoped, 1, 2, and 5 mol% Ce-doped ZnO/p-Si, respectively. The trap concentration decreases with the addition of Ce into the ZnO lattice. The study underlines the tunability of the electrical properties of ZnO/p-Si HJs through Ce doping and the optimizability of their efficiency.

60‐4: Minimal Efficiency Degradation and Elevated Radiometric Power Density of Ultraviolet‐A Micro‐LED with Homoepitaxial Structure

As display technology continues to advance, UVA micro‐LEDs are becoming increasingly important in a variety of display and beyond‐display applications. In this study, we investigate the optoelectronic characteristics of UVA micro‐LEDs based on a homogeneously epitaxial structure on freestanding gallium nitride (GaN) substrates. The device exhibits a central wavelength of 390 nm, positioned at the overlap of UVA and visible light spectra. It demonstrates an impressively low ideality factor of 1.49 at 2.86 V and a series resistance of 9.88 O beyond 3 V. Optically, our device shows virtually no wavelength shift across a wide current density range of 0.1‐1000 A/cm2, indicating exceptional optical stability and color accuracy. The emitted light is typical purple, reaching an expansive color gamut of 115.3% of Rec.2020. Furthermore, the GaN‐on‐GaN structure, with its superior crystal structure and heat dissipation properties, results in a very low droop ratio in EQE. This ensures sustained highpower output at high current densities, showcasing great potential in applications such as 3D printing, maskless photolithography, and fluorescence tagging.

The transport mechanism and barrier height inhomogeneity in Ag-ZnSnN2 Schottky barrier solar cells

To address the difference between the barrier height and the open circuit voltage of ZnSnN2 Schottky barrier solar cells prepared with Ag as the contact metal by sputtering deposition, the temperature-dependent current (I)-voltage (V) curves at darkness are studied. The IV properties are found to be controlled by the Schottky junction with thermionic emission as the major transport mechanism. The Schottky barrier height is inhomogeneous and obeys a double Gaussian distribution in different temperature ranges, very possibly due to the spatial structural inhomogeneity of the Ag-ZnSnN2 interface. Barrier height inhomogeneity results in positive temperature coefficient while the temperature coefficient of the bandgap remains negative. The linear relation between barrier height and ideality factor suggests that the IV curves also agree with the pinch off model.

Photoelectrical performances of semiconductor-based devices having CoFe and CoFeNi magnetic interlayers

This study was designed to examine the photoelectric device performances of cobalt-iron (CoFe) and cobalt-iron-nickel (CoFeNi) materials with good magnetic properties, specifically to investigate the effect of the Ni element on the electrical properties. In this context, Al/CoFe/p-Si and Al/CoFeNi/p-Si devices were produced by coating both materials between the semiconductor and the metal using the radio frequency (RF) sputtering method. First of all, to investigate the structural properties of the coated films, the content analysis was carried out by x-ray diffraction (XRD) analysis. To determine the photoelectrical properties of the produced devices, current–voltage and transient photocurrent measurements were performed and analyzed under different light intensities. While the ideality factor (barrier height) values of the devices produced using CoFe and CoFeNi materials were found to be 11.45 (0.487 eV) and 9.86 (0.513 eV), respectively, in the dark, they were obtained as 13.29 (0.446 eV) and 11.02 (0.484 eV) under 100 mW cm−2 illumination. It was determined that both devices are sensitive to light, with the sensitivity of the device with the CoFeNi interlayer being much higher. In addition, photocapacitance and photoconductivity measurements were carried out to examine the photocapacitor performance of the devices. As a result of the investigations, both current–voltage, photocurrent, and photo-capacitance/conductivity measurements showed that the device with the CoFeNi interface layer showed better performance than the device with the CoFe interface. Therefore, it has been determined that the Ni element has a positive effect on electrical properties. The results obtained show that the prepared materials and produced devices can be used in photovoltaic applications.

Role of interfacial layer as PANI–silicene in Si-based photodiodes

Silicene is a 2D monoatomic sheet of silicon and can be used for various applications such as degradation, therapy, and biosafety. Polyaniline (PANI) is a conducting polymer employed for electronic devices. In this study, we synthesized PANI–silicene composites and operated as an external interfacial layer between Al and different type substrates of p-Si and n-Si to compare Schottky-type photodiodes of PANI–silicene/n-Si and PANI–silicene/p-Si. The silicene structures were investigated using X-ray diffractometry (XRD) and scanning electron microscopy (SEM) techniques. Also, the light power intensity dependent of PANI–silicene/n-Si and PANI–silicene/p-Si photodiodes carried out in the range 0–100 mW/cm2 and I–t measurements utilized to determine the response time of the photodiodes. Basic parameters of devices such as ideality factors barrier, height, and series resistance were obtained by Norde and Cheung methods and thermionic emission (TE) theory from I–V graphs. While the PANI–silicene/n-Si exhibited high ideality factor values of 5.49, the PANI–silicene/p-Si photodiodes showed a low ideality factor of 1.48. The photodiode parameters such as detectivity and responsivity were calculated as 6.40 × 109 Jones and 38.9 mA/W for n-Si substrate and 78.2 mA/W and 8.81 × 109 Jones for p-Si substrate. The case of basic electrical properties for PANI–silicene composite interlayer-based photodiodes was analyzed in detail.

Investigation of structural, optical, electrical, thermoelectric and optoelectronic properties of undoped ZnO, Sb-doped ZnO and Sb–B co-doped ZnO thin films

Pure ZnO (Zinc oxide), 1 % Sb (antimony) doped ZnO (Zn0.99Sb0.01O), and 1 % Sb–1% B (boron) co-doped ZnO (Zn0.98Sb0.01B0.01O) solutions were prepared using the sol-gel method. These solutions were deposited as thin films on glass and Si (silicon) substrates via dip coating and spraying methods. In this study, doping ZnO with low amounts of Sb and B provided the conversion of the n-type semiconductor ZnO into a p-type semiconductor. The produced thin films were pure and had wurtzite ZnO polycrystalline structure. The nanodot morphology of ZnO turned into a mixture of nanodot and nanorod structures with only Sb doping. Moreover, the band gap energy of ZnO decreased from 3.26 eV to 3.24 eV with Sb doping and to 3.23 eV with Sb and B co-doping, accompanied by a decrease in optical transmittance depending on film thickness. All samples exhibited diode characteristics. According to the created Au/ZnO–Zn0.99Sb0.01O – Zn0.98Sb0.01B0.01O/Si diodes, it was understood that the ideality factor, barrier height, and serial resistance of ZnO material decreased with doping. Especially, the ideality factor, barrier height, and serial resistance of the ZnO sample decreased from 4.95, 6.80 eV, and 1.42 × 105Ω to 4.35, 6.25 eV, and 2.60 × 103Ω, respectively, with Sb and B co-doping. The photovoltaic performance of 1 % Sb-doped thin film increased 100 times compared to pure ZnO, reaching the efficiency from 0.006 to 0.600. However, the most suitable material for use as a photodiode was found to be the 1 % Sb–1% B co-doped sample. While the leakage current of this sample is around −8.0 × 10−5 A at −3 V under 100 mW/cm2 light, it is 9.5 × 10−8 A at −3 V in the dark. Furthermore, the 1 % Sb-doped thin film exhibited the best performance as a thermoelectric material at 600 K, achieving a figure of merit (ZT) of 0.00052. Overall, co-doping with Sb and B enhanced the optical, electrical, and structural (more homogeneous and less surface roughness) properties of ZnO, while improving its optoelectronic functionality such as photodiode. On the other hand, thermoelectric and solar cell properties of ZnO were enhanced with only 1 % Sb doping. A hybrid energy system containing thermoelectric and solar cells was produced cheaply and simply for wide application areas with this study. Moreover, with such a low doping amount, p-type material production was achieved, and important physical properties of the ZnO material were improved.

The effect of grain size on diode parameters of Ag/p-NiOx/n-Si/Al based Schottky diode

The effect of grain size on optical properties and designed Ag/p-NiOx/n-Si/Al-based Schottky diode have been investigated. The XRD patterns are used to calculate the grain size of NiOx film, which increases with increasing thickness. Fractal dimensions were estimated from the power spectral density (PSD) algorithm using AFM images. The band gaps were calculated from recorded transmission spectra, showing the reduction of band gap from 3.88 eV to 3.67 eV with increasing grain size. The effect of grain size on the performance of Ag/p-NiOx/n-Si/Al-based Schottky-diodes are analyzed through I-V measurement. The diode parameters of the designed device were calculated using the thermionic emission, Norde, and Cheung models. It is found that the reduction of barrier height of the Schottky diode from 0.95 eV to 0.84 eV with increasing grain size of NiOx films. It is found that the grain size of film strongly impacted on the diode parameters, such as ideality factor (η), potential barrier (φh), series resistance (Rs) performance.

Advancements in P3HT:PCBM solar cells through experimental and simulated techniques

Organic solar cells are a promising alternative in photovoltaics due to their low manufacturing cost and flexibility. In this study, we developed an organic solar cell of structure (ITO/PEDOT:PSS/P3HT:PCBM/Al) where the active layer is represented by P3HT:PCBM. Experimental studies revealed that this layer has an energy gap of 1.9 eV and a good absorption coefficient of 3×105cm−1 . Using analytical and experimental methods based on (J–V–T) curves, we extracted the key parameters of our device, including parasitic resistances ( Rs and Rsh ), ideality factor (n), and Schottky potential barrier ( ϕB) at different temperatures. Also the charge transport mechanism in our junction is identified in this study. We then used simulation to evaluate the performance of our solar cell, obtaining an initial efficiency of 2.13%, in line with experimental results from other research. Our results confirm the feasibility of our theoretical approach, with performance consistent with previous work. However, by introducing an electron transport layer layer (PFN-Br or PDINO), we were able to improve efficiency up to 4.25%. These results highlight the importance of optimising intermediate layers to maximise the efficiency of organic solar cells.

Electrical characteristics and trap signatures for Schottky barrier diodes on 4H-SiC, GaN-on-GaN, AlGaN/GaN epitaxial substrates

The forward and reverse current transport mechanisms, temperature dependence of Schottky barrier height (SBH) and ideality factor, barrier inhomogeneity analysis, and trap parameters for Schottky barrier diodes (SBDs) fabricated on 4H-SiC, GaN-on-GaN and AlGaN/GaN epitaxial substrates are reported. High SBH is identified for Ni/4H-SiC (1.31 eV) and Ti/4H-SiC (1.18 eV) SBDs with a low leakage current density of <10−8 A cm−2 at −200 V. Thermally stimulated capacitance detects the well-known Z1/2 electron trap at E C—0.65 eV in both 4H-SiC SBDs, while an additional deep-level trap at E C—1.13 eV is found only in Ni/4H-SiC SBDs. The vertical Ni/GaN SBD exhibits a promising SBH of 0.83 eV, and two electron traps at E C—0.18 eV and E C—0.56 eV are identified from deep-level transient Fourier spectroscopy. A peculiar two-diode model behavior is detected at metal/GaN/AlGaN/GaN interface of high-electron mobility transistor (HEMT); the first diode (SBH-1 of 1.15 eV) exists at the standard Metal/GaN Schottky junction, whereas the second diode (SBH-2 of 0.72 eV) forms due to the energy difference between the AlGaN conduction band and the heterojunction Fermi level. The compensational Fe-doping-related buffer traps at E C—0.5 eV and E C—0.6 eV are determined in the AlGaN/GaN HEMT, through the drain current transient spectroscopy experiments.

Электрофизические и температурные характеристики тонких слоёв квантовых точек Ag2S

This paper presents a study of the electrical properties of colloidal silver sulfide quantum dots thin films (Ag2S/SiO2 QDs) and silver sulfide quantum dots decorated with Au plasmon nanoparticles (Ag2S/SiO2/Au QDs). A study of the conductivity temperature dependences was carried out in the temperature range from 300 to 360 K. The activation energy values were obtained from linear approximations of the current-voltage characteristics in Arrhenius coordinates. It has been shown that decorating Ag2S/SiO2 QDs with Au plasmon nanoparticles leads to an increase in the band gap from 0.29 to 0.89 eV. In this work, the ideality factor is calculated and the main conductivity mechanisms of the presented thin-film structures are determined. It has been shown that decorating Ag2S/SiO2 QDs with Au plasmon nanoparticles leads to a change in the conductivity type. According to the Mott-Gurney model, the charge carriers mobility is calculated.

CuO nanoflowers: Multifaceted implications of various precipitating agents on rectification behaviour

In order to achieve the best possible use of traditional energy resources for the preservation of the environment, semiconductor-based optoelectronic devices are one of the most intriguing methods for converting light energy into electrical energy. CuO has been extensively explored as a material for energy conversion and the development of photo-detectors due to its notable characteristics among other metals, especially its non-toxicity, abundance, high efficiency, electrochemical stability and low cost/promising photodiode. However, some drawbacks limit its practical application in white light and photo-detector, including the rapid recombination rate of photo-generated electron-hole pairs and destitute response to visible light. As a result, several strategies have been developed from an optoelectronics perspective to eradicate these deficiencies and make an effort to enhance CuO photodiode activities. In this research work, the electrical characteristics and rectification behaviour of CuO with various precipitating agents have been examined. The CuO nanoparticles can be synthesized by co-precipitation technique prepared with different precipitants. Through this research, several parameters, such as the structural, functional, morphological, optical and electrical characteristics, were investigated by changing the precipitants. The functional group formation of pure CuO phase was confirmed by FT-IR studies. UV–Vis absorption measurements indicate that the band gap of the CuO nanoparticles was ranging from 2.40 to 2.85 eV. As a diode, CuO/p-Si exhibits a non-ideal behaviour and under light conditions with Na2CO3 precipitant, the better ideality factor is about 2.35. The barrier height is determined by the thermionic emission theory to be 0.77 and 0.79 eV in the dark and light conditions respectively.

Exploring the spectroscopic and I‑V‑T characteristics advancements of cadmium zinc tungsten phosphate diode

This research accomplished the growth of cadmium zinc tungsten phosphate (CZWP) thin films on both glass and p-Si substrates, employing the sol–gel spin coating method. The sol–gel technique offers a versatile and controlled approach for fabricating nanomaterials with tailored properties. The structural and morphological analyses, conducted through XRD and FE-SEM, provided comprehensive insights into the nature of the films. The optical properties, absorbance behavior, energy gap, refractive indices, dielectric, conductivity, and electronegativity, underwent meticulous examination through UV–Vis spectroscopy. The X-ray diffraction analysis of the zinc cadmium tungsten phosphate diode reveals diffraction lines indicative of a nanostructure featuring a monoclinic-phase Zn2P2O7 and Cd3P6O28. Furthermore, SEM analysis confirms a nanoporous morphology with a nanograpes-like structure in the successful crystalline structure of the cadmium zinc tungsten phosphate nanostructure. The optical absorption studies, covering a wavelength range from 190 to 1500 nm, unveiled both direct and indirect energy band gaps, measuring 4.14 and 3.77 eV, respectively. A rigorous analysis of the I-V-T characteristics for the CZNP/p-Si junction in dark mode led to the identification of key parameters, including the transport ideality factor, barrier height, and series resistance.

Effect of doping and preparation parameter on AC conductivity and dielectric modulus formalism of Al doped DLC thin films

Here, we report the composite effect of aluminum doping on the dielectric response of Diamond-Like Carbon (DLC) thin films. In addition, the contribution from preparation parameters like acetylene flow rate is also considered to understand sample behavior. AC conductivity study shows the existence of a nonlinear increase of conductivity with frequency leading toward the Jump Relaxation Model (JRM). The transition frequency (ft) is observed, which increases with conductivity. The study reveals that dielectric response is influenced by space charge conductivity, prompting us to adopt the modified Debye law. Deviation from ideal Debye behavior is also confirmed in dielectric modulus analysis. The deviation is frequency-dependent, and a higher deviation is observed in the high-frequency region. Plotting of the Master curve shows the presence of different relaxation dynamics in different samples. A current-voltage (I-V) study of different samples is also undertaken, showing higher values (greater than unity) of the ideality factor.

High-performance and low-power consumption deep UV photodetectors based on MOCVD-grown ZnGa2O4epilayers with high temperature functionality

This work reports on the fabrication of excellent quality deep ultraviolet photodetectors (DUV PDs) based on metalorganic chemical vapor deposition (MOCVD) grown spinel ZnGa2O4 thin films on c-plane sapphire. Herein, The DUV PDs by exhibiting an ultra-low dark current of 6.69 fA and a high photo-to-dark-current ratio (PDCR) of >108 at a low-power operation of 0.2 V. While PDCR reached more than 109 on applied bias of 10 V having extremely low dark current of 37 fA. The detector revealed an ultra-high responsivity of 185 and 3.53 A/W under the exposure of 107 μW/cm2 of 245 nm wavelength at room temperature (RT) and applied bias of 10 and 0.2 V, respectively, and exhibited the record-high detectivity of the order of 1017 Jones. The temperature-dependent operation remained stable across a wide temperature range, from 27 °C to 125 °C, maintaining ultra-low dark current. The nearly constant growth and decay time of DUV PDs throughout the temperature range emphasizes the robustness and reliability of PD. The ideality factor in both DUV and dark conditions nearing unity proves the dominance of the thermionic emission mechanism. Also shows the stable and slight improved performance after a year. Therefore, these findings suggest that ZnGa2O4 is a strong contender for deep UV detection that shows robustness even at high temperatures.

Performance improvement of blue light micro-light emitting diodes (< 20 μm) by neutral beam etching process

In this study, micro-light emitting diodes array (μLEDs) with dimensions of 5 μm and 15 μm chip size were fabricated using Neutral Beam Etching (NBE) processes. Size-dependent issues of μLEDs processed by traditional inductively coupled plasma-reactive ion etching (ICPRIE) were alleviated by NBE technology, which exhibited lower equivalent resistance, turn-on voltage, and Ideality factor as compared with those of μLEDs by ICPRIE. Additionally, higher light output power of μLEDs processed by NBE with both 5 μm and 15 μm resulted in higher EQE 7.6 % and 7.7 % than those of μLEDs processed by ICPRIE. Furthermore, the size effect led to a decrease in EQEmax values of the ICPRIE sample by 0.4 %, but only a 0.1 % decay in NBE. Overall, samples fabricated by the NBE process exhibited superior optoelectronic characteristics. Finally, non-radiative recombination behaviors on the mesa sidewall were verified by cathodoluminescence analysis, showing significant decay in ICPRIE samples but not in NBE samples. These results demonstrated the potential of the NBE process for fabricating small chip sizes blue-light μLEDs required for high-brightness, high-efficiency, and high-resolution μLED displays.

Estimating the productivity of US agriculture: The Fisher total factor productivity index for time series data with unknown prices

AbstractIn this paper, we propose a straightforward way to estimate the Fisher ideal total factor productivity (TFP) index (FI) in cases where price information is unavailable, using ‘shadow prices’ derived from data envelopment analysis (DEA). A Monte Carlo experiment shows that the shadow price Fisher ideal TFP index (SPFI) can effectively estimate the ‘true’ FI with relatively small (and stable) errors. The empirical application to the US agriculture sector (1948–2017) further suggests that the SPFI is a (superior) alternative to the traditional Malmquist DEA, especially in dealing with unbalanced panel or time series data when price data are unknown.

Model Parameters and Degradation Mechanism Analysis of Indium Phosphide Hetero-Junction Bipolar Transistors Exposed to Proton Irradiation

The degradation properties of Indium phosphide hetero-junction bipolar transistors (InP HBTs) under proton irradiation are studied and modelled using a compact model for pre-irradiation, post-irradiation, and post-annealing. The variation rates of the model parameters, such as the base–emitter saturation current (ISE) and ideality factor in the ideal region (NE) in the forward Gummel characteristics, the zero-biased capacitance (Cje) and the grading factor (Mjer) in the BE junction capacitance, and the transit time parameter in the base region (Tfb), are analysed to delve into the degradation mechanism induced by proton irradiation. The displacement damage, induced by proton irradiation in the space charge region of the base–emitter junction and in the quasi-neutral bulk base region, is found to be responsible for the decrease in current gain and cut-off frequency. After annealing, the variation rates of the parameters decrease significantly compared to post-irradiation. This suggests that the recombination of unstable defects leads to a slight recovery in the degradation characteristics of InP HBTs after a period of annealing.

Electrical conduction and photodiode properties of Au/Feq3/p-Si/al hybrid heterostructure

Thin films of iron tris(8-hydroxyquinoline) (Feq3) are prepared on p-Si substrates by thermal deposition under high vacuum. The current-voltage (I–V) curves of Au/Feq3/p-Si/Al heterojunction are recorded as a function of temperature range from 303 to 383 K at 20 K interval. The device shows rectification behavior, with room temperature ideality factor (n) and barrier height (φ) values of 2.30 and 0.81 eV, respectively. The temperature dependence of φ and n is explained in terms of barrier inhomogeneity, in which the homogenous φ value is estimated as 0.97 eV. The conduction mechanisms of the diode are determined and related parameters are evaluated The series resistance of the diode is estimated as a function of temperature. Up on illuminating the diode, the reverse current of the diode increases with increasing the impinging light intensity, from which the photosensitivity and photoconduction are determined.

Fabrication of plasmonic junction diodes based on Ag@ZnO core-shell nanostructures

In this study, Ag nanoparticles and Ag@ZnO core–shell nanostructures were prepared using the wet chemical method and these nanostructures were used for Ag@ZnO/p-Si diode fabrication. Structural, morphological, and optical characterization techniques were applied for Ag@ZnO core–shell NPs prepared by using different molarity of precursor ZnCl2 (10 mM, 20 mM, 30 mM) and showed that the effect of increasing precursor amount on these physical properties of nanoparticles is important. For Ag@ZnO, transmission electron microscopy shows an average diameter of Ag nanoparticles was 51.32 nm and Ag@ZnO core–shell nanostructures were found to be between 31 and 92 nm. The UV-visible absorbance also shows significant plasmonic resonance for NPs, with a slight red shift increasing precursor molarity. The peaks are found to be from 412 nm to 432 nm. This redshift in surface plasmon absorption of Ag@ZnO core–shell structures are consistent with XPS survey. The current–voltage (I-V) characteristic curves of heterojunction diodes were taken in the dark and at room temperature, and it was observed that they showed a rectifying feature. Ideality factor and barrier height values have been found between 2.14 and 3.87, and 0.56 and 0.78, respectively. The results revealed that Ag@ZnO was successfully synthesized and can be used in rectification applications.

Electrical Properties of Laser Patterned Schottky Diode with ALD-Grown TiO2 Interlayer.

Heterojunction formation is the key to adjusting the electronic and optoelectronic properties of various semiconductor devices. There have been various reports on the formation and importance of semiconducting heterojunction devices based on metal oxides. Titanium dioxide (TiO2) is one of the metal oxides that has many unique properties. TiO2's importance is due to its physical and chemical properties such as large band gap, large permittivity, stability, and low leakage current density. In this context, we present the electrical properties of the metal-insulator-semiconductor (MIS) type-TiO2-based Schottky barrier diode (SBD) in the study. To create a thin layer of TiO2 on p-type silicon (p-type Si) patterned partially by the laser-induced periodic surface structure (LIPSS) technique, an atomic layer deposition (ALD) technique was used in the study. For comparison, the current-voltage (I-V) characteristics of the TiO2-based laser-patterned (LP) and nonlaser-patterned (non-LP) diodes were measured at 300 K and in the dark at ±5 V. Classical thermionic emission (TE) theory and Cheung functions were used to investigate the critical diode parameters of the diodes, including ideality factor (n), series resistance (Rs), and barrier height (Φb). The n values were obtained as 4.10 and 3.68 from the TE method and Cheung functions for the LP diode, respectively. The Φb values were found as 0.68 and 0.69 eV from the TE method and Cheung functions, respectively. According to experimental results, the laser patterning resulted in an increase in the Φb values and a decrease in the n values. After laser patterning, it was observed that the device worked effectively, and the ideality factor and barrier height values were improved. This study provides insight into the fabrication and electrical properties of TiO2-based heterojunction devices.