Ideality Factor Research Articles

Effects of Li concentration in the precursor solution on NiO thin films deposited using electrostatic spray deposition

Abstract Undoped and Li-added NiO thin films were deposited using electrostatic spray deposition (ESD) techniques. Initially, the NiO thin films displayed minimal contamination, predominantly C and H. The NiO thin films exhibited a flat surface morphology comprising grains of uniform size, approximately 20–30 nm in diameter, and reliable crystal growth, with a full width at half maximum of approximately 0.30 in X-ray diffraction analysis. Moreover, the NiO/ZnO diode demonstrated superior properties when a 5 at. % Li concentration solution was incorporated. The rectification ratio reached approximately 2.3 × 10³ at ± 1.0 V, with an ideality factor of 1.9. Additionally, the NiO/ZnO diodes exhibited remarkable photovoltaic properties even without detailed optimization. These findings underscore the potential of ESD in advancing semiconductor thin-film technology, thereby paving the way for more cost-effective and scalable production methods.

CsSnBr3 and Cs3Bi2Br9: Structural, Optical Characteristics, and Application in a Schottky Barrier Diode

The search for alternatives to Pb‐based perovskites, due to concerns about stability and toxicity, has led to the exploration of Pb‐free options. Tin (Sn) and bismuth (Bi) are promising candidates, given their similar ionic radii to Pb and the isoelectronic nature of Pb2+ and Bi3+, which suggest comparable chemical properties. Among these, CsSnBr3 and Cs3Bi2Br9 are relatively underexplored but offer lower toxicity and enhanced stability while demonstrating optoelectronic properties suitable for various applications. In this study, CsSnBr3 and Cs3Bi2Br9 nanocrystals are synthesized using a colloidal method and integrated into Schottky diodes. X‐ray photoelectron spectroscopy analysis of the surface chemistry confirms improved thermal and phase stability compared to Pb‐based perovskites. Schottky diode parameters, including ideality factor, barrier height, and series resistance are assessed using conventional thermionic emission, modified Cheung's, and Norde's models. The Cs3Bi2Br9‐based Schottky diode exhibits superior electrical performance with the lowest series resistance and optimal barrier height. Electrical impedance spectroscopy results indicated that CsSnBr3 has higher resistances and lower capacitances than Cs3Bi2Br9, reflecting lower charge carrier mobility and more defects, although the R1C1 regions in both materials demonstrated faster charge dynamics, making them ideal for high‐speed applications.

650 V vertical Al0.51Ga0.49N power Schottky diodes

We report high-Al-composition (HAC) Al0.51Ga0.49N vertical power Schottky barrier diodes (SBDs) on sapphire substrates grown by metal organic chemical vapor deposition. The fabricated vertical HAC AlGaN-on-sapphire SBDs exhibit a low turn-on voltage of 1.31 V, a high on/off ratio of ∼107, a low ideality factor of 1.35, and a high breakdown voltage of 662 V.

I-V Characteristics of Polycrystalline CAZTSe Heterojunction Solar Cells at Different Ag Content and Annealing Temperatures

Since the polycrystalline (Cu1-xAgx)2ZnSnSe4 (CAZTSe) demonstrated good optical absorption performance in the visible region, the focus of the present study is to grow the polycrystalline (Cu1-xAgx)2ZnSnSe4 thin films deposited by thermal evaporation method on silicon substrates with 800 nm thickness and 0.53 nm/sec deposition rate as a function of Ag content (0.0,0.1,0.2) and annealing temperature at 373 K, 473 K. From I-V measurements of Al/n-CdS/p-CAZTSe/n-Si(111)/Al heterojunction solar cells under dark and illumination conditions, we observed that the forward bias current changes roughly exponentially with bias voltage and the ideality factor and saturation current dependence on both x content and different temperatures (Ta).

Ferrocene Chalcone Enhanced Cyclotriphosphazene Photodiode Systems via Click Chemistry: Their Synthesis, Electrical, and Photophysical Properties.

In this study, a new ferrocene-decorated cyclotriphosphazene compound (4) was obtained by the interaction of ferrocene chalcone with azide end groups (2) and spirophosphazene (3) bearing alkyne groups using the click method. The structures of all compounds were confirmed using Fourier transform infrared, 1H, 13C APT, and 31P NMR, and MS techniques. The optical band gaps of compounds were measured, showing values of 4.75 eV for 3, 3.53 eV for 2, and 3.46 eV for final product 4. The optical band gap of compound 4 calculated by density functional theory is 3.28 eV. The electrical properties of the compounds were investigated against the frequency. The results showed that the conduction mechanism is based on the hopping model. New types of diodes were prepared by using compounds 2 and 4. The current-voltage characteristics of the compound 4 diode showed good rectification behavior. The rectification ratio of the heterojunction diode was calculated as 629. The ideality factors were 3.35 for 2 and 7.57 for 4. The barrier heights were 0.68 and 0.92, respectively. Under sunlight (20-100 mW/cm2), both diodes exhibited photodiode properties, with compound 4 being more sensitive to light. This indicates that the diodes can be used in optoelectronic devices due to their photoconductive behavior.

Physical Properties of HfO2 Nano Structures Deposited using PLD

On Quartz substrates, high purity transparent conductive the Di-Oxide of the (HfO2) Nano and micro-structure films were successfully coated. The method of (PLD) Deposition using Pulsed Laser, and the influence of laser energy was investigated. The XRD results revealed two distinct phases, cubic and monoclinic crystal shapes. Peaks in the Fourier-transform infrared (FTIR) spectra showed that HfO2 nanofilm was forming.The findings of the optical characteristics reveal an excellent transparency of nearly 80% (89 percent). As the laser wavelength decreases, the optical energy band gap values for Nanostructure of HfO2 were prepared, with values ranging from 5.24 to 5.53 eV. Also, the EDX results showed the appearance of hafnium peaks and oxygen peaks in varying proportions, which confirms that hafnium oxide is definitely obtained The results of the AFM reveal that when the pulsed laser intensity increases, the average grain diameter values increase from 52.96 to 74.54 nm. With regard to optimum pulsed laser energy, the based on I-V characterization, the generated factor ideality for created diodes was discovered to be decreasing, and the corresponding values of the barrier height grew. The ideality factor of the diode made the optimum pulsed laser energy (1800 mJ) was greater (n=3.1).

Experimentation, Taguchi and machine learning-based optimisation of parameters concerning heat losses from the trapezoidal box-type solar cooker

ABSTRACT The optimal design parameter combinations for a trapezoidal solar cooker that yield the lowest heat loss coefficient have been determined using a thorough Taguchi and Machine learning-based optimization approach that has been established for this study. Data for the previously described optimization have been generated through the use of an experimental approach in a laboratory environment. Numerous influencing factors are taken into account, including the temperature of the bottom plate, the depth of the cavity, the emissivity of the bottom cover, and the wind-induced heat transfer coefficient on the top glass cover. For the current investigation, the ideal factor combination is found to be a parametric combination plate temperature of 350K with 0.4 plate emissivity, 15W/m2 convective heat transfer coefficient, and 0.25 m height. To determine the percentage contribution of each control element to the heat loss coefficient, analysis of variance (ANOVA) has been used for the collected data and signal-to-noise ratios. Plate temperature at 74.72% and emissivity at 23.84% are the primary contributing variables found. Likewise, the least contributing factors like height (0.57%) and convective heat transfer coefficient (0.32%) are discovered. A regression equation is used to represent the connection between the response and the control factor. This formula is suggested as a forecast formula for calculating the heat loss coefficient.

Electronic Barriers Behavioral Analysis of a Schottky Diode Structure Featuring Two-Dimensional MoS2

This research presents a comprehensive study of a Schottky diode fabricated using a gold wafer and a bilayer molybdenum disulfide (MoS2) film. Through detailed simulations, we investigated the electric field distribution, potential profile, carrier concentration, and current–voltage characteristics of the device. Our findings confirm the successful formation of a Schottky barrier at the Au/MoS2 interface, characterized by a distinct nonlinear I–V relationship. Comparative analysis revealed that the Au/MoS2 diode significantly outperforms a traditional W/Si structure in terms of rectification performance. The Au/MoS2 diode exhibited a current density of 1.84 × 10−9 A/cm2, substantially lower than the 3.62 × 10−5 A/cm2 in the W/Si diode. Furthermore, the simulated I–V curves of the Au/MoS2 diode closely resembled the ideal diode curve, with a Pearson correlation coefficient of approximately 0.9991, indicating an ideality factor near 1. A key factor contributing to the superior rectification performance of the Au/MoS2 diode is its higher Schottky barrier height of 0.9 eV compared to the 0.67 eV of W/Si. This increased barrier height is evident in the band diagram analysis, which further elucidates the underlying physics of Schottky barrier formation in the Au/MoS2 junction. This research provides insights into the electronic properties of Schottky contacts based on two-dimensional MoS2, particularly the relationship between electronic barriers, system dimensions, and current flow. The demonstration of high-ideality-factor Au/MoS2 diodes contributes to the design and optimization of future electronic and optoelectronic devices based on 2D materials. These findings have implications for advancements in semiconductor technology, potentially enabling the development of smaller, more efficient, and flexible devices.

Dark current in FTO/CZTS interface: a comprehensive comparison of practical Vs theoretical approach using SCAPS-1D

This study investigates the deposition of Cu2ZnSnS4 (CZTS) thin films on fluorine-doped tin oxide (FTO) and soda-lime glass (SLG) substrates using radio frequency (RF) sputtering at varying temperatures. A comprehensive characterization employing multiple analytical techniques was conducted. X-ray diffraction (XRD) analyses confirmed the amorphous nature of CZTS films being deposited up to 200 °C, while higher temperatures promoted increased crystallinity, with the presence of (112) and (220) planes observed at 300 °C and 400 °C. Rietveld refinement using Profex software revealed an increase in crystallite size with deposition temperature for films grown at 300 °C and 400 °C. Optical characterization through UV–vis spectroscopy unveiled a decrease in band gap energy with increasing deposition temperature, while the Urbach energy, associated with defects and imperfections, exhibited an inverse relationship with band gap and temperature. Experimental current–voltage (I-V) measurements using a Keithley source meter showed variations in the ideality factor with deposition temperature. SCAPS-1D simulations were performed to model the FTO/CZTS interface, incorporating experimental parameters. The simulated I-V behavior demonstrated a transition from recombination to diffusion-dominated current above 1.3 V forward bias. Simulations yielded higher ideality factors due to increased contributions from recombination and diffusion currents. Overall, this study provides insights into the growth, structural, optical, and electrical properties of CZTS thin films deposited by RF sputtering, enabling a comprehensive understanding of the FTO/CZTS heterojunction characteristics and their dependence on deposition temperature.

Analysis of Aspiration Factors becoming Mathematics Teacher that Influence High School Students’ Decision to Choos Mathematics Education Program

The importance of the ideal factor in making decisions to choose a program is the urgency of this study. The purpose is to describe the factors of the ideal of becoming a mathematics teacher that influence students in making decisions to choose the mathematics education program at UIN SYAHADA Padangsidimpuan candidates in 10 respondents. The qualitative descriptive is the approach taken in this study. The method of sampling targeted/purposive and snowball data sources, triangulation data collection methods, inductive/qualitative data analysis and qualitative research results emphasize these methods in one method. The results showed that the ideal factor of becoming a mathematics teacher was found in making decisions to choose the mathematics education. After analyzing the information that the researcher collected, it was found based on the results of the analysis questionnaires distributed and interviews with respondents/students who were active in the mathematics education department, several effective factors in the field were found that influenced students to choose the mathematics education section, namely the ideal factor of becoming a mathematics teacher. Based on these results, it shows that one of the factors that influences students to choose a mathematics education program is the aspiration factor to become a mathematics teacher. The aspiration factor to become a mathematics teacher is related to choice of mathematics education program. Of all the problems answered by mathematics education students, there were 10 respondents who in accordance with the aspiration factor to become a mathematics teacher in making decisions about choosing a mathematics education program.

Realization of diode structures on paper: An example of papertronics

A possibility of fabricating paper/Ag/CdTe/Au Schottky and paper/Ag/CdTe/CdS/In p-n junction diode structures has been demonstrated here. Ag (∼5 μm), CdTe (∼50 μm), CdS (∼45 μm), Au and In dots (∼5 μm) were deposited on the cellulose using appropriate stainless-steel masks to obtain the requisite diode structures. The band gaps of the CdTe and CdS layers were ∼1.55 eV and ∼1.45 eV, respectively. Current-voltage (I-V) characteristics of the paper/Ag/CdTe/Au Schottky and paper/Ag/CdTe/CdS/In p-n junction diodes were recorded at room temperature. Ideality factor (n), series resistance (RS) and barrier height (φb) of the respective diodes were computed. The barrier height (φb) and ideality factor (n) computed from current-voltage characteristics were found to be 0.74 eV and 1.8, respectively at room temperature. Series resistance and φb computed by using Cheung-Cheung method were ∼177 Ω and ∼0.45 eV, respectively. They are comparable to the resistance derived from a modified Norde method. The fabricated diodes were reproducible and stable for a few months. These diode structures were tested in an open environment at room temperature and showed no noticeable ageing effect.

A more accurate Co-Content function calculation, using alternative integration methods, for Current–Voltage curves measured in the zero volt to open-circuit voltage range

AbstractIn this article, the application of the Newton–Cotes quadrature formula, the 3/8 rule, the Boole’s rule, and order 5 and 6 integration techniques, are explored to more accurately calculate the Co-Content function, of Current–Voltage (IV) measurements done between 0 V and the open circuit voltage, which include a percentage noise of the short circuit current. Their impact on the extraction of the five photovoltaic devices’ parameters (within the one-diode model) is investigated and reported. The shunt resistance, series resistance, ideality factor, and photocurrent can be obtained with less than 10% error, using these integration techniques and 101 measured points per volt, when the percentage noise is 0.05% or less, of the short circuit current. It is not possible to obtain the saturation current with less than 10% error. These integration techniques are implemented in photovoltaic devices, such as solar cells and single-crystalline silicon, CdTe, CIGS, and heterojunction with intrinsic thin-layer solar panels IV curves, to extract the five solar cell parameters.

Optimizing optoelectronics performance: theoretical and experimental study on ZnO thin film for Al/ZnO/p-Si photodiode

Abstract In this paper, a ZnO photodiode in a p-n heterojunction configuration is fabricated on a p-type Si substrate focusing specifically on ZnO/p-Si heterojunction photosensitive devices and photodiodes (PDs) using Al contacts. Through an experimental and theoretical analysis approach aims to evaluate the effects of important parameters, including ZnO layer thickness, defect density, and contact materials, on PD’s efficiency. Numerical analysis simulations comparatively examine the experimentally fabricated device performance at a 5 nm ZnO layer thickness by balancing photon absorption and carrier formation while minimizing carrier transport limitations. Experimentally process, an Atomic Layer Deposition (ALD) system was used to grow ZnO interlayers on one side of the polished Si wafer. Then, Al metallic contacts were created on the ZnO layers using a hole array mask. The PDs were then subjected to electrical characterization using I-V and I-t measurements under various illumination densities. Al/ZnO/p-Si PD’s device with active performance has been produced and analyzed with electrical parameters such as barrier height, photocurrent, spectral response, ideality factor and EQE were derived, analyzed and studied. In conclusion, this work provides a comprehensive understanding of the performance of Al/ZnO/p-Si PD at varying illumination intensities and offering a detailed analysis of key parameters influencing device efficiency for future optoelectronics applications.

Inspection and comparative analysis of light and thermal response dynamics of Cu/V₂O₅/n-Si and Cu/La-V₂O₅/n-Si MIS diodes

Schottky Barrier Diodes (SBDs) are pivotal in modern electronics for their quick switching and low forward voltage drop, enabled by metal-semiconductor junctions. SBDs are renowned for their performance, primarily due to their metal-semiconductor intersection. This study focuses on Cu/V2O5/n-Si and Cu/La-V2O5/n-Si SBDs, examining the impact of lanthanum doping on their performance. Transition Metal Oxides (TMOs) like Vanadium Pentoxide (V2O5) offer unique electronic, magnetic and optical properties making them suitable for various applications. The fabrication process involved sol-gel spin coating and DC magnetron sputtering to create a thin V2O5 layer on n-type silicon wafers, followed by copper contact deposition. Galvanizing temperatures ranged 300° C to 500° C to study the structural, optical, and morphological changes in V2O5 thin films. Key findings include the significant reduction in ideality factor (n) with increasing annealing temperatures for Cu/V2O5/n-Si SBDs, reaching as low n value of 5.26 at 500°C, indicating improved device performances. For Cu/La-V2O5/n-Si SBDs, the ideality factor consistently decreased with higher light intensities, showcasing enhanced performance due to La doping. Barrier height (ɸB) also varied, with higher values observed for La-doped V2O5, enhancing charge recombination and increasing oxygen vacancies. Photodiode parameters were significantly enhanced by doping of the La. The Cu/La-V2O5/n-Si SBDs demonstrated high photosensitivity (PS = 3327.5 %), photo responsivity (R = 33.39 mA/W) and detectivity (D* = 9.82 × 10¹⁰ Jones), making them highly efficient for optoelectronic applications. Overall, this study highlights the potential of Cu/La-V2O5/n-Si SBDs for high-efficiency, optoelectronic applications, with optimized doping concentrations and annealing conditions significantly improving their performance.

Facile assembly of SnO2 thin film-based Al/SnO2/Al device for sensing of 260 nm UVC and 365 nm UVA radiation

An Al/SnO2/Al metal-semiconductor-metal (MSM) device was formed by depositing a ~55nm thin film of SnO2 on Si substrate. Structural, surface morphology and optical properties of the SnO2 film were studied. The current-voltage (I-V) characteristics of the device were recorded under the dark condition followed by 260 nm-UVC and 365 nm-UVA illumination conditions. Under the dark condition, the device shows a resistivity of 8.05 Ωcm at V=1.5V bias voltage. The device produces nearly symmetric rectifying-type I-V characteristics under forward and reverse bias conditions. The electrical properties of the device were explained using back-to-back Schottky diode model. Under the dark condition, the ideality factor of the junction under forward and reverse bias were estimated to be 1.08 and 1.72 respectively. The external quantum efficiency of the device under UVC was found to be ~518.72% and specific detectivity reached as high as 1.03×109 Jones at 2.0V with a response time of ~1s. The device showed a high signal-to-noise ratio between 0.5 and 1.5V bias voltages. The values of the ideality factor being greater than 1 was attributed to the presence of point defects in the SnO2 layer as verified by photoluminescence study. This study reveals that the device could be used as a UVC and UVA sensor at a relatively low bias voltage of ~1.5V.

Investigation of the Electrical Properties of Cu-doped CoOx/n-Si Structures Fabricated by the Sol-Gel Method

The sol-gel spin coating technique was employed for the deposition of thin films comprising CoOx, Cu-doped CoOx, and CuOx onto n-Si substrates. Subsequently, an exhaustive examination of the electrical properties of the resultant heterojunction structures was conducted. The outcomes unequivocally indicate that the incorporation of Cu through doping exerts a pronounced influence on the electrical attributes of the CoOx/n-Si diode. Notably, all diodes exhibit rectifying behavior, a discernible feature in their dark current-voltage (I-V) characteristics. The I-V data was further utilized to ascertain pivotal junction parameters, encompassing series resistance (Rs), rectification ratio (RR), ideality factor (n), and barrier height (ΦB). The values of the ideality factor for CoOx/n-Si, Cu doped CoOx/n-Si and CuOx/n-Si are obtained to be 3.19, 1.99 and 2.19 eV, respectively. Furthermore, the capacitance-voltage (C-V) characteristics of diodes were performed within the frequency range of 10 kHz to 1 MHz. These findings underscore that judicious manipulation of the copper doping concentration can serve as an effective means to modulate the electrical properties of CoOx/n-Si diodes.

Semiconductive-like Behaviour and Negative Differential Effect Observed in Self-Assembled Riboflavin Layer on Gold Electrodes

Riboflavin or vitamin B2 plays significant roles in metabolic reactions and energy production, establishing it as an important research subject in biology and medicine. While there are numerous riboflavin-related publications in these fields, interrogation of its electronic properties in relation to the physiological function at the cellular level remains obscure due to technological challenges. However, progress in molecular electronics and the discovery of the semiconductor-like behaviour of biomolecules in recent times have initiated growing interest in exploring the electronic properties of these materials for potential bioelectronic device applications. In this work, we demonstrate novel semiconductor-like behaviour in riboflavin within a gold/Riboflavin/gold Schottky junction. We observed the occurrence of two negative differential resistance peaks at low voltages of 1.5 and 2.0 V, probably the first-ever report of this effect in a biomolecule. Interestingly, the proposed mechanism simulates a single Schottky junction behaviour despite the physical existence of two junctions. Solid-state parameters such as turn-on voltage, shunt resistance, and ideality factor were also calculated using Conventional and Cheung and Cheung’s methods. The results were highly characteristic to the riboflavin studied when compared to previous works on biomolecules. This opens up the possibility of developing solid-state sensors for electronically characterising biomolecules like vitamins to help advance our understanding of the electronic properties of these essential nutrients.

Epilayer thickness effect on the electrical and breakdown characteristics of vertical β-Ga2O3 Schottky barrier diode

The current–voltage and breakdown characteristics of Au/Ni/β-Ga2O3 Schottky barrier diodes were investigated as a function of β-Ga2O3 epilayer thickness in the range of 6–19 μm. The X-ray rocking curves indicated that the full-width half-maximum is reduced with increasing epilayer thickness, implying an improvement in the crystallinity of β-Ga2O3 epilayer. The barrier heights of the field-plated β-Ga2O3 Schottky barrier diode with epitaxial layer thickness of 6, 12, and 19 μm were obtained as 1.01, 1.03, and 1.04 eV, with the ideality factor values being 1.21, 1.19, and 1.46, respectively. The higher ideality factors could be associated with the existence of inhomogeneity at the metal–semiconductor interface. The series resistance of the Schottky diode obtained increased with increasing epilayer thickness. The Schottky diode fabricated on 19 μm thick epitaxial layer exhibited a higher breakdown voltage of 490 V. The increase in epilayer thickness led to the widening of depletion region, resulting in lower electric field over a larger distance. This could be a main cause of the enhancement of the breakdown voltage characteristics of β-Ga2O3 Schottky barrier diode.

The effects of Ppy-silicene composite on the performance of n-/p-type silicon semiconductor-based photodiodes

The advancement of electronic technology is accelerated by the discovery of two-dimensional materials, and it also becomes a prompting area for researchers to focus on exploring their alternatives. In these research activities, silicene attracts significant attention due to its potential in various electronic applications. In addition, polypyrrole (PPy), belonging to the class of intrinsic conducting polymers, is another important material preferentially used in this technology. In this study, a composite material prepared in the form of Ppy:silicene is applied between metal and semiconductor. The resulting Ppy:silicene/p-Si and Ppy:silicene/n-Si photodiodes are discussed according to their diode responses. Structural characteristics of fabricated silicene based layer material are determined by X-ray diffraction technique. Device behaviors of the fabricated devices are mainly analyzed in response to incident light. At this characterization step, electrical measurements are conducted in a dark environment and under different light intensities ranging from 20 to 100mW/cm2. For instance, the Ppy-Silicene/p-Si device exhibited a barrier height of 0.57eV and an ideality factor of 3.1, compared to the Ppy-Silicene/n-Si device, which showed a barrier height of 0.55eV and an ideality factor of 4.9. Characteristic photodiode parameters, such as light sensitivity, responsivity, and detectivity are obtained through current-voltage/time measurements depending on power of light. In addition to these parameters, performance-determining parameters for the diodes as barrier height, series resistance, and ideality factor are investigated according to thermionic emission and Cheung's approaches. The results indicate that the performance of the Ppy-Silicene/p-Si photodiode is significantly more effective than that of the photodiode produced with n-Si substrate. As a result of these experimental works, the fabricated Ppy-Silicene composite material and its diodes, especially on p-Si, can be evaluated as a promising candidate for optoelectronic technology.

Sol-Gel Spin Coating Synthesis and Characterization of Cadmium Zinc Phosphate Thin Films: Structural, Optical, and Electrical Properties

This study successfully implemented the sol-gel and spin coating technique to grow cadmium zinc phosphate cadmium zinc phosphate (CZP) thin films on a glass substrate and p-Si wafer. Structural and morphological analyses were conducted via X-ray diffraction (XRD) and field-emission scanning electron microscopy (SEM). Additionally, the films’ linear and nonlinear optical properties, encompassing absorbance performance, energy gap, refractive index, dielectric, conductivity, and electronegativity, were systematically studied through UV–vis spectroscopy. XRD analysis uncovers the zinc ions substitution by cadmium ions in zinc phosphate’s unit cell, generating oxygen vacancies crucial for maintaining charge neutrality. SEM images then showcase the intricate and organized nano CZP framework. Shifting to optical studies, CZP film analysis spanning 190–2500 nm reveals an indirect energy band gap of 2.92 eV. Transitioning to electrical characteristics, the CZP/p-Si junction undergoes dark mode I-V-T analysis, elucidating the ideality factor, series resistance, and barrier height.