Band Hybridization Research Articles

Nd3+ induces three-dimensional hierarchical rosette-shaped Bi3O4Br to generate abundant oxygen vacancies for enhanced photocatalytic activity

Three-dimensional hierarchical rosette-shaped Bi3O4Br has been successfully prepared by a one-step hydrothermal method for the first time, in which the doping of Nd3+ into the matrix of Bi3O4Br induces abundant oxygen vacancies and triggers energy-band hybridization to produce new dopant levels, which can efficiently receive photo-excited electrons and inhibit the complexation of photogenerated carriers. Impressively, the doped energy levels act as “springboards” for photogenerated electron jumps, exacerbating the inhomogeneity of charge distribution and accelerating charge separation. In addition, the fine-tuning of Nd3+ improves the band structure and photocatalytic performance of Nd/Bi3O4Br. Notably, the unique 3D rosette-like Bi3O4Br could enhance the adsorption capacity of the catalyst and provide more opportunities for the introduction of Nd3+ to induce the generation of abundant oxygen vacancies. Both experimental and density functional theory (DFT) results reveal the synergistic effect of energy band hybridization and oxygen vacancies. In addition, comparative experiments showed that Nd/Bi3O4Br enhanced the maximum removal efficiency of heavy metal mercury by 29.66 % relative to Bi3O4Br under visible light. The present work reveals the reaction mechanism of photocatalytic oxidation for mercury removal, which provides a new direction for realizing energy conversion and environmental purification in the future.

Valence-band hybridization in sulphides.

The hybridization state in solids often defines the critical chemical and physical properties of a compound. However, it is difficult to spectroscopically detect and evaluate hybridization beyond just general fingerprint signatures. Here, the valence-band hybridization of metal d-derived bands (short: "metal d bands") in selected metal sulphides is studied with a combined spectroscopic and theoretical approach to derive deeper insights into the fundamental nature of such compounds. The valence bands of the studied sulphides are comprised of hybrid bands derived from the metal d, S 3s, and S 3p states. Employing S K and L2,3 X-ray emission spectroscopy and spectra calculations based on density functional theory, the degree of hybridization (i.e., the covalency) of these bands can be directly probed as a function of their relative energies. We find that the relative intensity of the "metal d band" features in the spectra scales with the inverse square of the energy separation to the respective sulfur-derived bands, which can be analytically derived from a simple two-orbital model. This study demonstrates that soft X-ray emission spectroscopy is a powerful tool to study valence state hybridization, in particular in combination with hard X-ray emission spectroscopy, promising a broad impact in many research fields.

Electronic structure of CuxZrSe2 with tetrahedrally-coordinated Cu atoms

An experimental study of the crystal and electronic structure and properties of the quasi-two-dimensional CuxZrSe2 compound in the region of copper concentration, in which Cu atoms are tetrahedrally coordinated by the Se atoms, has been performed. A study of the magnetic, kinetic, and optical properties of CuxZrSe2 revealed that the tetrahedral coordination of the Cu by Se atoms results in the formation of a covalent bond with a probable Cu 4s/Se 4p hybridization. A combination of soft X-ray spectroscopic methods (X-ray photoelectron spectroscopy, X-ray absorption spectroscopy and resonance photoelectron spectroscopy) with optical spectroscopy, which was used to investigate the electronic structure, confirmed this assumption. The Cu 4s/Se 4p hybrid band falls into the energy gap between the Zr 4d-derived conduction band and the Se 4p-derived valence band.

Spin-dependent electronic phenomena in heavily-doped monolayer graphene

The controlled manipulation of doping levels in graphene is crucial for advancing next-generation low-power electronics. Owing to its peculiar band structure, graphene's electronic functionalities can be easily tuned by electron doping, resulting in the bandgap openings, orbital hybridization, and induced spin-polarization. Here, we unveil the substantial doping of the graphene layer and the emergence of a significant bandgap by sandwiching a monolayer graphene, supported on ferromagnetic cobalt, between two europium layers. Our angle- and spin-resolved photoemission spectroscopy experiments, accompanied by dedicated density functional theory calculations, demonstrate that single-spin electron pockets form as a result of the hybridization of the topmost europium majority bands with graphene, while hybridization gaps are induced in the graphene π∗ bands by the Eu minority bands. Spin-resolved measurements further emphasize a single-spin dispersionless contribution proximal to the Fermi level, possibly arising from the coupling of single-spin polarized graphene bands to optical phonons. This work provides crucial insights into the phase diagram of heavily doped graphene, with significant potential for the design and development of novel 2D systems.

Theoretical Studies of the Electronic and Thermoelectric Properties of PrIn3 and NdIn3 in Cubic Phase

The electronic and thermoelectric properties of AB3 (A =Pr, Nd and B=In) materials (crystallizing in the cubic structure) having space group Pm-3m (221) are studied using B3PW91 hybrid functional through the Full-Potential Linear Augmented Plane Wave (FP-LAPW) approach within the framework of Density Functional Theory (DFT). The calculated lattice parameters for PrIn3 and NdIn3 are 4.5668 Å and 4.5539 Å respectively. Electron-electron correlation effect is due to the 4f orbitals present in these materials and therefore, with the use of B3PW91 hybrid functional, band structure and density of states are calculated. When analyzing electron charge density, these materials showed a stronger ionic character. Band structure and density of state analysis confirms the metallic nature of the materials. Using the semi-empirical Boltzmann approach implemented in the BoltzTraP code, the thermoelectric parameters, such as Seebeck coefficient, figure of merit, electrical conductivity per relaxation time, and electronic thermal conductivity per relaxation time as a function of chemical potential, were computed at 500 K temperature gradient. PrIn3 showed highest Seebeck coefficient value, 50.68 μV/K among these compounds. The peak value of electrical conductivity per relaxation time and electronic thermal conductivity per relaxation time among these compounds is calculated for NdIn3 is 2.43 x 1020 1/Ωms and 22.50×1014 W/mKs.

Harnessing 4f Electron Itinerancy for Integrated Dual-Band Redox Systems Boosts Lithium-Oxygen Batteries Electrocatalysis.

In-depth comprehension and manipulation of band occupation at metal centers are crucial for facilitating effective adsorption and electron transfer in lithium-oxygen battery (LOB) reactions. Rare earth elements play a unique role in band hybridization due to their deep orbitals and strong localization of 4felectrons. Herein, we anchor single Ce atoms onto CoO, constructing a highly active and stable catalyst with d-fa dual-band redox center. It is discovered that the itinerant behavior of 4felectrons introduces an enhanced spin-orbit coupling effect, which facilitates ideal σ/π bonding and flexible adsorption between the Ce/Co active sites and *O. Simultaneously, the injection of localized Ce 4felectrons strengthens the orbital bonding capacity of Co-O, effectively inhibits the dissolution of Co sites and improves the structural stability of the cathode material. Bracingly, the Ce1/CoO-based LOB exhibits an ultra-low charge-discharge polarization (0.46 V) and stable cyclic performance (1088 hours). This work breaks through the traditional limitations in catalyst activity and stability, providing new strategies and theoretical insights for developing high-performance LOBs powered by rare-earth elements.

Unraveling the origin of Kondo-like behavior in the 3d-electron heavy-fermion compound YFe2Ge2

The heavy fermion (HF) state of [Formula: see text]-electron systems is of great current interest since it exhibits various exotic phases and phenomena that are reminiscent of the Kondo effect in [Formula: see text]-electron HF systems. Here, we present a combined infrared spectroscopy and first-principles band structure calculation study of the [Formula: see text]-electron HF compound YFe[Formula: see text]Ge[Formula: see text]. The infrared response exhibits several charge-dynamical hallmarks of HF and a corresponding scaling behavior that resemble those of the [Formula: see text]-electron HF systems. In particular, the low-temperature spectra reveal a dramatic narrowing of the Drude response along with the appearance of a hybridization gap ([Formula: see text] 50 meV) and a strongly enhanced quasiparticle effective mass. Moreover, the temperature dependence of the infrared response indicates a crossover around [Formula: see text] 100 K from a coherent state at low temperature to a quasi-incoherent one at high temperature. Despite of these striking similarities, our band structure calculations suggest that the mechanism underlying the HF behavior in YFe[Formula: see text]Ge[Formula: see text] is distinct from the Kondo scenario of the [Formula: see text]-electron HF compounds and even from that of the [Formula: see text]-electron iron-arsenide superconductor KFe[Formula: see text]As[Formula: see text]. For the latter, the HF state is driven by orbital-selective correlations due to a strong Hund's coupling. Instead, for YFe[Formula: see text]Ge[Formula: see text] the HF behavior originates from the band flatness near the Fermi level induced by the combined effects of kinetic frustration from a destructive interference between the direct Fe-Fe and indirect Fe-Ge-Fe hoppings, band hybridization involving Fe [Formula: see text] and Y [Formula: see text] electrons, and electron correlations. This highlights that rather different mechanisms can be at the heart of the HF state in [Formula: see text]-electron systems.

Rational Molecular Design of Phenanthroimidazole-Based Fluorescent Materials toward High-Efficiency Deep-Blue OLEDs by Molecular Isomer Engineering.

Organic light-emitting diodes (OLEDs) have been extensively investigated in full-color displays and energy-saving lighting owing to their unique advantages. However, deep-blue OLEDs based on nondoped emitting layers with a satisfactory external quantum efficiency (EQE) are still rare for applications. In this work, six hot exciton materials, PPIM-12F, PPIM-22F, PPIM-13F, PPIM-23F, PPIM-1CN, and PPIM-2CN, are designed and synthesized via an isomer engineering design strategy and their photophysical properties and OLED performance are systematically investigated. These emitters all possess wide band gaps (3.53-3.69 eV), hybrid local and charge transfer (HLCT) characteristics, and good thermal stabilities. The C2 series compounds, PPIM-22F, PPIM-23F, and PPIM-2CN, all show redder emission peaks than the N1 series counterparts of PPIM-12F, PPIM-13F, and PPIM-1CN. In addition, the LUMO energy levels decrease consecutively in the sequence of PPIM-22F < PPIM-23F < PPIM-2CN and are all lower than their respective N1 series position isomers of PPIM-12F, PPIM-13F, and PPIM-1CN. The CV measurements indicate that such a design strategy renders the fine-tuning of LUMO energy levels, and the incorporation of electron acceptors at the extended C2 position of the PI unit is a better choice to improve the electron injection ability. Theoretical simulations indicate that they may harvest the triplet exciton through an upper-level reverse intersystem crossing process, which decreases the gathering of triplet excitons and allows the OLEDs to be fabricated by nondoping technology. Among them, PPIM-22F with a difluorobenzene substituent at the C2 position manifests the best performance in OLEDs, which exhibits the maximum EQE of 7.87% and Commission Internationale de ĺEclairage (CIE) coordinates of (0.16, 0.10). This work demonstrates an effective strategy for considerable improvement in device performance by a subtle change in the molecular structure through isomer engineering.

Universal Enhancement Effect of Nonlinear Optical Response from Band Hybridization

AbstractBulk photovoltaic effect, i.e. shift current, is a nonlinear second‐order optical response that can rectify an alternating current (AC) electric field into a direct current (DC). Depending on the wavelength of the incident light, shift current finds applications in various fields, including solar energy conversion and radiation detection. Its promising application in energy conversion and information processing has inspired investigations to uncover the relationship between shift current and electronic structures of materials. Despite numerous efforts dedicated to designing principles for strong bulk photovoltaic effect materials, the only widely accepted crucial parameter is the joint density of states (JDOS). In this study, employing effective model analysis and first‐principles calculations, an enhancement effect of bulk photovoltaic effect is found to arise from band hybridization that is typically along with anti‐crossing‐like electronic band structures, similar to the Berry curvature effects in intrinsic anomalous Hall conductivity. While this mechanism does not offer a comprehensive understanding of the relationship between electronic structure and the magnitude of bulk photovoltaic effect, it represents practical progress in the design of materials with strong bulk photovoltaic effect.

Asymmetric Bond Delta‐Polarization at the Interfacial Se─Ru─O Bridge for Efficient pH‐Robust Water Electrolysis

AbstractThe rationalization of pH‐robust catalysis is highly desired but challengeable for overall water electrolysis (WE). It requests a metal active site that can make an efficient adaption with both cathodic hydrogen and anodic oxygen evolution reactions (HER/OER). Herein, a RuO2‐x/RuSe2 heterostructure electrocatalyst is profiled with interfacial Se─Ru─O bridge for the pH‐robust water splitting studies. An asymmetric bond delta‐polarization (Δp) is found at the interfacial Se─Ru─O bridge, including the Δp &gt; 0 at the Ru─O part and Δp &lt; 0 at the Ru─Se side by both experiment and calculation results. The enlarged Ru─O bond polarizability (Δp &gt; 0) can in principle trigger the lattice oxygen mediated (LOM) pathway for OER; meanwhile, the reduced Ru─Se bond polarizability can benefit the HER due to the strengthened d‐p band hybridization. Resultantly, the heterostructure can deliver ultralow overpotentials of 25/10 mV for Pt‐beyond HER and 210/255 mV for OER at 10 mA cm−2 in acidic/alkaline media, respectively. In especial, the acidic overall WE can be stably operated for 200 h with a low cell voltage of 1.478 V at 10 mA cm−2. This research clarifies the asymmetric bond polarization as the criterion for the rational design of efficient WE catalysts.

Evolution of surface conductivity in SmB6 under nonmagnetic (Yb2+) and magnetic (Eu2+) doping

Among of rare-earth (RE) hexaborides only two compounds SmB6 and YbB6 are discussed in literature to be members of a new class of 3D topological insulators. However, their ground states originate due to different physical mechanisms, including Kondo 4f-5d hybridization and 5d-2p band inversion, respectively. Here we report a comparative study of magnetotransport (resistivity and transverse magnetoresistance) measured on high quality single crystals of YbxSm1-xB6 and EuxSm1-xB6 solid solutions (x ≤ 0.05) at temperatures 1.7 − 300 K in magnetic fields up to 82 kOe. The choice of dopant was determined by the fact that the presence of magnetic/nonmagnetic (Eu2+/Yb2+) impurity in parent SmB6 matrix should lift/not lift the topological protection of surface states. Based on the two-gap paradigm the x-evolution of electron spectra in YbxSm1-xB6 and EuxSm1-xB6 was studied. Our data show that both the 4f lattice coherence (Eg) and the intrinsic gap (Ea) related to many-body states survive under RE doping at least for x ≈ 0.02 − 0.024. We also suggest that the point x(Eu) = 0.05 can be treated as an upper limit of the small gap closing in EuxSm1-xB6 materials. In YbxSm1-xB6 family a negative linear transverse magnetoresistance (TMR) was detected for the first time in the regime of surface conductivity (T < T∗ ≈ 5 K). The TMR anomaly at T∗ caused possibly by the topological protection of surface states in SmB6 is found to survive in Eu-doped compounds but disappears almost completely for Yb-doped compositions in the same fixed magnetic fields. This paradoxical observation is not consistent with general predictions of the topological Kondo insulator (TKI) model.

Controlling structure and interfacial interaction of monolayer TaSe2 on bilayer graphene

Tunability of interfacial effects between two-dimensional (2D) crystals is crucial not only for understanding the intrinsic properties of each system, but also for designing electronic devices based on ultra-thin heterostructures. A prerequisite of such heterostructure engineering is the availability of 2D crystals with different degrees of interfacial interactions. In this work, we report a controlled epitaxial growth of monolayer TaSe2 with different structural phases, 1H and 1 T, on a bilayer graphene (BLG) substrate using molecular beam epitaxy, and its impact on the electronic properties of the heterostructures using angle-resolved photoemission spectroscopy. 1H-TaSe2 exhibits significant charge transfer and band hybridization at the interface, whereas 1 T-TaSe2 shows weak interactions with the substrate. The distinct interfacial interactions are attributed to the dual effects from the differences of the work functions as well as the relative interlayer distance between TaSe2 films and BLG substrate. The method demonstrated here provides a viable route towards interface engineering in a variety of transition-metal dichalcogenides that can be applied to future nano-devices with designed electronic properties.

Nonreciprocal Dissipation Engineering via Strong Coupling with a Continuum of Modes

Optical nonreciprocity plays a key role in almost every optical system, directing light flow and protecting optical components from backscattered light. Controllable forms of on-chip nonreciprocity are needed for the robust operation of increasingly sophisticated photonic integrated circuits (PICs) in the context of classical and quantum computation, networking, communications, and sensing. However, it has been challenging to achieve wideband, low-loss optical nonreciprocity on-chip. In this paper, we demonstrate strong coupling and Rabi-like energy exchange between photonic bands, possessing a continuum of modes, to unlock nonreciprocity and frequency translation over wide optical bandwidths in silicon. Using a traveling-wave phonon field to drive indirect interband photonic transitions, we demonstrate band hybridization that enables an intriguing form of nonreciprocal dissipation engineering. Using the converted mode to create a nonreciprocal dissipation channel, we demonstrate a frequency-neutral, low-loss (less than 1 dB) isolator with high nonreciprocal contrast (more than 14 dB) and broad operating bandwidth (more than 59 GHz). Additionally, through the implementation of complete interband conversion, we demonstrate a high extinction (more than 55 dB) optical frequency translation operation with near-unity efficiency. Published by the American Physical Society 2024

High gain D‐band hybrid integrated on‐chip antenna based on low‐cost printed circuit board packaging technology

AbstractA high gain D‐band hybrid integrated on‐chip antenna (OCA) based on a low‐cost printed circuit board (PCB) packaging technology is analyzed and designed in a standard 40‐nm CMOS process in this paper. The proposed OCA is a hybrid structure of a slotted patch OCA with off‐chip PCB ground and off‐chip dielectric resonator (DR). The proposed OCA exhibits a simulated gain of 3.5 dBi and 53% radiation efficiency at 150 GHz. The simulated impedance bandwidth is 20 GHz. The radiation performance and impedance bandwidth of the OCA are observably improved with the proposed techniques. The proposed OCA occupies 0.52 × 0.56 mm2, and addresses the highly desirable yet challenging overall design of future low‐cost integrated millimeter‐wave (mm‐Wave) and terahertz (THz) systems, which hit the mark on cost and compatibility.

Direct Observation of Semimetal Contact Induced Charge Doping and Strain Effect in CVD‐Grown Monolayer MoS2 Transistors

AbstractTwo‐dimensional Materials (2DMs) offer significant promise for advancing device miniaturization and extending Moore's law. Despite the challenges posed by high contact resistance in transistors, recent discoveries highlight semimetals as an effective approach for achieving ohmic contact with near‐quantum‐limit contact resistance. The energy band hybridization between semimetal and MoS2 is found to create degenerate states and heavily doped contact, which is proposed as the underlying mechanism responsible for reducing contact resistance. However, a quantitative and comprehensive characterization of the semimetal‐MoS2 interface is lacking, leaving the physical interactions elusive. This study reveals that semimetals induce n‐type doping and tensile strain in monolayer MoS2 grown using CVD, which serve as the contact resistance and mobility boosters. Among the semimetals investigated, including Bismuth (Bi), Antimony (Sb), and their alloy, Bi results in the highest electron doping of 2 × 1013 cm−2 and a 0.5% tensile strain, leading to reduced contact resistance and enhanced mobility. First‐principles calculations and spectroscopy measurements unveil the impact of electron doping and strain in MoS2, and the thermal effects are subsequently explored. This research underscores the potential of semimetals in boosting device performance and lays the foundation for reducing contact resistance in transistors made from 2D materials.

Synergistic photoinduced charge transfer resonance from porous ZIF-67 decorated violet phosphorus array for SERS immunoassay of SARS-CoV-2 spike protein

As a rapid, highly sensitive, and user-friendly technique, surface-enhanced Raman scattering (SERS) has an extraordinary appeal to home self-test of COVID-19 during the post pandemic era. However, most of the existing SERS substrates have been still criticized in stability, repeatability, and sample enrichment. To address these obstacles, a novel non-metallic SERS substrate with porous surfaces and array geometry was developed by in-situ growing ZIF-67 particles on two-dimensional violet phosphorus (VP) matrix. Chemical enhancement was prominently promoted by the synergistic photoinduced charge transfer resonance in the hybrid band structure of the ZIF-67@VP substrate, facilitating a noble metal-similar enhancement factor of 6.11 × 107. The biocompatible ZIF-67@VP porous array with attractive enhancement capability and high anchoring efficiency was further utilized to monitoring SARS-CoV-2 spike protein in practical saliva samples based on a sandwich immunostructure, achieving a limit of detection of 1.7 ng/mL assisted by black phosphorus nanosheets. This nonmetallic immunoassay strategy with exceptional sensitivity and specificity is predicted to extend the utilization of SERS obstacle in daily infectious disease screening.

Hybridization of Electronic Bands for Extending Plasmonic Band by Alloyed Nanostructures

Hybridization of Electronic Bands for Extending Plasmonic Band by Alloyed Nanostructures

Probing Interlayer Interactions and Commensurate-Incommensurate Transition in Twisted Bilayer Graphene through Raman Spectroscopy.

Twisted 2D layered materials have garnered much attention recently as a class of 2D materials whose interlayer interactions and electronic properties are dictated by the relative rotation/twist angle between the adjacent layers. In this work, we explore a prototype of such a twisted 2D system, artificially stacked twisted bilayer graphene (TBLG), where we probe, using Raman spectroscopy, the changes in the interlayer interactions and electron-phonon scattering pathways as the twist angle is varied from 0° to 30°. The long-range Moiré potential of the superlattice gives rise to additional intravalley and intervalley scattering of the electrons in TBLG, which has been investigated through their Raman signatures. Density functional theory (DFT) calculations of the electronic band structure of the TBLG superlattices were found to be in agreement with the resonant Raman excitations across the van Hove singularities in the valence and conduction bands predicted for TBLG due to hybridization of bands from the two layers. We also observe that the relative rotation between the graphene layers has a marked influence on the second order overtone and combination Raman modes signaling a commensurate-incommensurate transition in TBLG as the twist angle increases. This serves as a convenient and rapid characterization tool to determine the degree of commensurability in TBLG systems.

Low-frequency electron–phonon interaction and superconductivity in L12 -type trialuminides Al3V

Superconductivity enhancement is often associated with phonon softening by doping or external pressure. In this paper, we report L12 -type trialuminides Al3V as a typical example belonging to this scenario. The electronic, phononic and superconducting properties have been studied by using the first-principle method. Under uniaxial compression, the superconducting transition temperature Tc of Al3V can be increased from ≈1.5 K to its maximum at ≈7.3 K when the lattice approaches the structural instability. A detailed investigation of Al3V reveals that the (V: d)-(Al: p) hybrid bands are strongly coupled to the phonon modes with lower frequency. The uniaxial compression induces a significant softening of the phonon mode with non-zero phonon line-width, and yet keeps the electron density of states near the Fermi level unchanged. This leads to a stronger electron–phonon coupling (EPC) and therefore a higher Tc . On the contrary, the L12 structure is more stable against the hydrostatic pressure and the phonon energy actually grows up when the hydrostatic pressure is increased. As a result, EPC becomes weaker and Tc can be reduced to ⩽ 0.3 K under high hydrostatic pressure. Our results present an interesting example that superconductivity can enhanced by tuning the softened phonon via pressure or doping.

On the origin of the improved hydrogen evolution reaction in Mn- and Co-doped MoS2.

In the field of hydrogen production, MoS2 demonstrates good catalytic properties for the hydrogen evolution reaction (HER) which improve when doped with metal cations. However, while the role of sulfur atoms as active sites in the HER is largely reported, the role of metal atoms (i.e. molybdenum or the dopant cations) has yet to be studied in depth. To understand the role of the metal dopant, we study MoS2 thin films doped with Co and Mn ions. We identify the contribution of the electronic bands of the Mn and Co dopants to the integral valence band of the material using in situ resonant photoemission measurements. We demonstrate that Mn and Co dopants act differently: Mn doping favors the shift of the S-Mo hybridized band towards the Fermi level, while in the case of Co doping it is the less hybridized Co band that shifts closer to the Fermi level. Doping with Mn increases the effectiveness of S as the active site, thus improving the HER, while doping with Co introduces the metallic site of Co as the active site, which is less effective in improving HER properties. We therefore clarify the role of the dopant cation in the electronic structure determining the active site for hydrogen adsorption/desorption. Our results pave the way for the design of efficient materials for hydrogen production via the doping route, which can be extended to different catalytic reactions in the field of energy applications.