AbstractConsidering a high‐density vertical X‐point memory array, the film thickness of an active device for the selector and memory needs to be scaled down. Here, the authors propose an AgTe/HfOx‐based hybrid memory device with a film thickness of less than 10 nm by adopting a bilayer (HfO1.8/HfO2) film using precise composition control. Non‐volatile switching characteristics can be obtained by considering the formation of stable nanoscale Ag filaments in the nanoporous region in non‐stoichiometric HfO1.8 deposited via sputtering. By contrast, volatile switching characteristics are achieved by an unstable atomic‐scale Ag path in stoichiometric HfO2 deposited via plasma‐enhanced atomic layer deposition. Based on density functional theory calculations, it is confirmed that the stoichiometry of the HfOx film is the key parameter that controls the switching characteristics. The bilayer (HfO1.8/HfO2) device exhibits excellent hybrid memory characteristics, such as distinct read margin (>1.5 V), high ON/OFF ratio (>106), and extremely low OFF current (≈pA), for vertical X‐point memory applications.
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