Hybrid Complementary Inverter Research Articles

High-resolution continuous microcontact printing on various substrates for organic and oxide electronics

This study demonstrates a continuous high-resolution roll-to-roll (R2R) microcontact printing (μCP) process capable of printing inks on substrates with a wide range of surface energies. This process is based on rapid solidification of the fluoropolymer ink made up of a low boiling point solvent. The use of a hydrophobic siloxane polymer for the stamp allows film formation onto various substrates due to weak adhesion with the fluorinated polymer ink. To investigate its practical applicability the patterned layer printed by the R2R μCP was used as an etching resistant layer to pattern metallic and dielectric materials with 10 μm resolution. Moreover, the organic and oxide thin-film transistors with the patterned channels were combined to produce the hybrid complementary inverter circuits, having full swing transfer characteristics.

MoS2/pentacene hybrid complementary inverter based photodetector with amplified voltage–output

A sensitive photodetection based on a novel hybrid CMOS inverter has been demonstrated. Unlike common photo-current type photodetectors, which convert optical signals to current, the CMOS inverter realizes voltage–output, overcoming the difficulty to monitor current signal in the range of nA. The hybrid CMOS logic inverter employs n-channel MoS2 nanosheet/perovskite heterojunction FET and p-channel organic pentacene FET in a planar architecture. In order to obtain high performance, we adopt the interdigital electrodes for the pentacene FET to enhance the current density of the p-channel, and stack perovskite on the MoS2 channel to modify the threshold voltage of the n-channel. As a result, a CMOS inverter with a voltage gain of more than ten is obtained. When VIN is around the transition voltage (−38 V), the inverter can obtain stable optical detection signal, the VOUT changes from 6 V in dark to 1 V under 633 nm light exposure. This finding indicates the potential to fabricate visible light detecting devices with voltage–output based on the inverter and may be further applicable for a photo-logic circuit.

Sub-2 V, Transfer-Stamped Organic/Inorganic Complementary Inverters Based on Electrolyte-Gated Transistors

Organic/inorganic hybrid complementary inverters operating at low voltages (1 V or less) were fabricated by transfer-stamping organic p-type poly(3-hexylthiophene) (P3HT) and inorganic n-type zinc oxide (ZnO) electrolyte-gated transistors (EGTs). A semicrystalline homopolymer-based gel electrolyte, or an ionogel, was also transfer-stamped on the semiconductors for use as a high-capacitance gate insulator. For the ionogel stamping, the thermoreversible crystallization of phase-separated homopolymer crystals, which act as network cross-links, was employed to improve the contact between the gel and the semiconductor channel. The homopolymer ionogel-gated P3HT transistor exhibited a high hole mobility of 2.81 cm2/(V s), and the ionogel-gated n-type ZnO transistors also showed a high electron mobility of 2.06 cm2/(V s). The transfer-stamped hybrid complementary inverter based on the P3HT and ZnO EGTs showed a low-voltage operation with appropriate inversion characteristics including a high voltage gain of ∼18. These results demonstrate that the transfer-stamping strategy provides a facile and reliable processing route for fabricating electrolyte-gated transistors and logic circuits.

High-Gain Hybrid CMOS Inverters by Coupling Cosputtered ZnSiSnO and Solution-Processed Semiconducting SWCNT

In this paper, high-gain hybrid complementary inverter was first designed and fabricated by coupling cosputtered ZnSiSnO and solution-processed semiconducting single-walled carbon nanotubes (SWCNTs). Field-effect transistors with ZnSiSnO and SWCNT networks show high electrical performance and acceptable bias stability. ZnSiSnO thin-film transistor shows field-effect mobility of 11.6 cm2/ $\text {V}\cdot \text {s}$ , threshold voltage of 0.98 V, and subthreshold swing of 0.18 V/decade. The corresponding values for the SWCNT transistor are 10.2 cm2/ $\text {V}\cdot \text {s}$ , 0.59 V, and 0.21 V/decade, respectively. The ZnSiSnO/SWCNT inverter shows excellent performance with a voltage gain of 41.5, a high noise margin of 2.62 V, and a low noise margin of 1.86 V at a small ${V}_{\text {DD}}$ of 5 V. The peak consumption is only $3.2\times 10^{8}$ W at ${V}_{\text {DD}} = 5$ V. Our finding underscores the coupling of cosputtered ZnSiSnO and solution-processed semiconducting SWCNT as an alternative strategy to the high-performance inverter development and has the potential for widespread technological applications.

Hybrid complementary inverter based on carbon nanotube and IGZO thin-film transistors with controlled process conditions

Carbon nanotubes (CNTs) and indium-gallium-zinc oxide (IGZO) have emerged as important materials for p-type and n-type thin-film transistors (TFTs), respectively, due to their high mobility, flexibility, and low fabrication temperature. However, fabricating sophisticated macroelectronic circuits operating in complementary mode is challenging using only a single material, because implementing n-type CNT TFTs and p-type IGZO TFTs is difficult. Therefore, hybrid complementary circuits integrated with p-type CNT TFTs and n-type IGZO TFTs have been demonstrated to combine the strength of each TFT. However, limited efforts have been devoted to optimizing the circuit performance by tuning the process conditions under which the percolated CNT network channel and IGZO channel are formed. In particular, the densities of CNTs in the network channel and the amount of oxygen vacancies in the IGZO channel can be simply adjusted, which are important in determining the electrical properties of each TFT. In this work, we systematically investigated the device and circuit performance by varying such conditions; hence, we confirmed the design features of each TFT that can be optimized to enhance the hybrid complementary circuits.

Hybrid PN Diode and CMOS Inverters Composed of MoTe2 Nanosheet-Amorphous in-Ga-Zn-O Thin Film

We report a hybrid material system which couples a dry-transfer-processed p-type MoTe2 nanosheet and a conventional photolithography-patterned n-type amorphous InGaZnO (IGZO) thin-film. The PN junction diode shows a good ideality factor of 1.57 and a high ON/OFF rectification ratio of ∼3 × 104. Under illumination, our PN diode shows somewhat stable only responding to high-energy photons of blue and ultraviolet. Our CMOS inverter composed of p-MoTe2 bottom-gate field-effect transistor and n-IGZO top-gate field-effect transistors. Our 2D nanosheet – oxide thin film CMOS inverter shows high voltage gains as high as ~40 at 5 V, low power consumption less than ~ a few nW at 1 V, and ~200 μs switching speed. Both hybrid PN junction diode and complementary (CMOS) inverters are realized by such novel hybrid material system that now opens any further possibilities toward practical applications of 2D nanosheets combined with existing technologies. Figure 1

High-Performance Hybrid Complementary Inverter with N-Type InGaZnO and P-Type WSe2 Thin-Film Transistors

High-Performance Hybrid Complementary Inverter with<i> N</i>-Type InGaZnO and<i> P</i>-Type WSe₂ Thin-Film Transistors

Coupling Two-Dimensional MoTe2 and InGaZnO Thin-Film Materials for Hybrid PN Junction and CMOS Inverters.

We report the fabrication of hybrid PN junction diode and complementary (CMOS) inverters, where 2D p-type MoTe2 and n-type thin film InGaZnO (IGZO) are coupled for each device process. IGZO thin film was initially patterned by conventional photolithography either for n-type material in a PN diode or for n-channel of top-gate field-effect transistors (FET) in CMOS inverter. The hybrid PN junction diode shows a good ideality factor of 1.57 and quite a high ON/OFF rectification ratio of ∼3 × 104. Under photons, our hybrid PN diode appeared somewhat stable only responding to high-energy photons of blue and ultraviolet. Our 2D nanosheet-oxide film hybrid CMOS inverter exhibits voltage gains as high as ∼40 at 5 V, low power consumption less than around a few nW at 1 V, and ∼200 μs switching dynamics.

Hybrid complementary circuits based on p-channel organic and n-channel metal oxide transistors with balanced carrier mobilities of up to 10 cm2/Vs

We report the development of hybrid complementary inverters based on p-channel organic and n-channel metal oxide thin-film transistors (TFTs) both processed from solution at &amp;lt;200 °C. For the organic TFTs, a ternary blend consisting of the small-molecule 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene, the polymer indacenodithiophene-benzothiadiazole (C16IDT-BT) and the p-type dopant C60F48 was employed, whereas the isotype In2O3/ZnO heterojunction was used for the n-channel TFTs. When integrated on the same substrate, p- and n-channel devices exhibited balanced carrier mobilities up to 10 cm2/Vs. Hybrid complementary inverters based on these devices show high signal gain (&amp;gt;30 V/V) and wide noise margins (70%). The moderate processing temperatures employed and the achieved level of device performance highlight the tremendous potential of the technology for application in the emerging sector of large-area microelectronics.

Solution-processed hybrid organic–inorganic complementary thin-film transistor inverter

We investigated hybrid organic–inorganic complementary inverters with a solution-processed indium–gallium–zinc-oxide (IGZO) n-channel thin-film transistor (TFT) and p-channel TFTs using the high-uniformity polymer poly[2,5-bis(alkyl)pyrrolo[3,4-c]pyrrolo-1,4(2H,5H)-dione-alt-5,5-di(thiophene-2-yl)-2,2-(E)-2-(2-(thiophen-2-yl)vinyl)thiophene] (PDVT-10). The IGZO TFT was fabricated at 150 °C for 1 min. It showed a high field-effect mobility of 0.9 cm2·V−1·s−1 and a high on/off current ratio of 107. A hybrid complementary inverter was fabricated by combining IGZO with a PDVT-10 thin-film transistor and its operation was confirmed.

Photo-Patternable ZnO Thin Films Based on Cross-Linked Zinc Acrylate for Organic/Inorganic Hybrid Complementary Inverters.

Complementary inverters consisting of p-type organic and n-type metal oxide semiconductors have received considerable attention as key elements for realizing low-cost and large-area future electronics. Solution-processed ZnO thin-film transistors (TFTs) have great potential for use in hybrid complementary inverters as n-type load transistors because of the low cost of their fabrication process and natural abundance of active materials. The integration of a single ZnO TFT into an inverter requires the development of a simple patterning method as an alternative to conventional time-consuming and complicated photolithography techniques. In this study, we used a photocurable polymer precursor, zinc acrylate (or zinc diacrylate, ZDA), to conveniently fabricate photopatternable ZnO thin films for use as the active layers of n-type ZnO TFTs. UV-irradiated ZDA thin films became insoluble in developing solvent as the acrylate moiety photo-cross-linked; therefore, we were able to successfully photopattern solution-processed ZDA thin films using UV light. We studied the effects of addition of a tiny amount of indium dopant on the transistor characteristics of the photopatterned ZnO thin films and demonstrated low-voltage operation of the ZnO TFTs within ±3 V by utilizing Al2O3/TiO2 laminate thin films or ion-gels as gate dielectrics. By combining the ZnO TFTs with p-type pentacene TFTs, we successfully fabricated organic/inorganic hybrid complementary inverters using solution-processed and photopatterned ZnO TFTs.

Complementary Logic Inverters: High‐Performance Hybrid Complementary Logic Inverter through Monolithic Integration of a MEMS Switch and an Oxide TFT (Small 12/2015)

Complementary Logic Inverters: High‐Performance Hybrid Complementary Logic Inverter through Monolithic Integration of a MEMS Switch and an Oxide TFT (Small 12/2015)

Few-Layer MoS2-Organic Thin-Film Hybrid Complementary Inverter Pixel Fabricated on a Glass Substrate.

Few-layer MoS2-organic thin-film hybrid complementary inverters demonstrate a great deal of device performance with a decent voltage gain of ≈12, a few hundred pW power consumption, and 480 Hz switching speed. As fabricated on glass, this hybrid CMOS inverter operates as a light-detecting pixel as well, using a thin MoS2 channel.

High‐Performance Hybrid Complementary Logic Inverter through Monolithic Integration of a MEMS Switch and an Oxide TFT

A hybrid complementary logic inverter consisting of a microelectromechanical system switch as a promising alternative for the p-type oxide thin film transistor (TFT) and an n-type oxide TFT is presented for ultralow power integrated circuits. These heterogeneous microdevices are monolithically integrated. The resulting logic device shows a distinctive voltage transfer characteristic curve, very low static leakage, zero-short circuit current, and exceedingly high voltage gain.

High-gain subnanowatt power consumption hybrid complementary logic inverter with WSe2 nanosheet and ZnO nanowire transistors on glass.

A 1D-2D hybrid complementary logic inverter comprising of ZnO nanowire and WSe2 nanosheet field-effect transistors (FETs) is fabricated on glass, which shows excellent static and dynamic electrical performances with a voltage gain of ≈60, sub-nanowatt power consumption, and at least 1 kHz inverting speed.

Flexible nano-hybrid inverter based on inkjet-printed organic and 2D multilayer MoS2 thin film transistor

We report a novel platform on which we design a flexible high-performance complementary metal–oxide–semiconductor (CMOS) inverter based on an inkjet-printed polymer PMOS and a two-dimensional (2D) multilayer molybdenum disulfide (MoS2) NMOS on a flexible substrate. The initial implementation of a hybrid complementary inverter, comprised of 2D MoS2 NMOS and polymer PMOS on a flexible substrate, demonstrates a compelling new pathway to practical logic gates for digital circuits, achieving extremely low power consumption with low sub-1nA leakage currents, high performance with a voltage gain of 35 at 12V supply voltage, and high noise margin (larger than 3V at 12V supply voltage) with low processing costs. These results suggest that inkjet-printed organic thin film transistors and 2D multilayer semiconducting transistors may form the basis for potential future high performance and large area flexible integrated circuitry applications.

Low Voltage Organic/Inorganic Hybrid Complementary Inverter With Low Temperature All Solution Processed Semiconductor and Dielectric Layers

A novel organic/inorganic hybrid integration architecture was developed to realize low-voltage complementary inverters with low temperature (not exceeding 150°C) solution processed semiconductor and dielectric layers. The p-type organic transistor and n-type zinc-oxide transistor used different approaches to reduce the operation voltage, and can thus be easier to be integrated with compatible solution based processes.

Tuning Electrical Properties in Amorphous Zinc Tin Oxide Thin Films for Solution Processed Electronics

Solution processed zinc tin oxide (ZTO) thin film transistors (TFTs) were fabricated by varying the Zn/Sn composition. The addition of Sn to the zinc oxide (ZnO) films resulted in improved electrical characteristics, with devices of Zn0.7Sn0.3O composition showing the highest mobility of 7.7 cm(2)/(V s). An improvement in subthreshold swings was also observed, indicative of a reduction of the interfacial trap densities. Mobility studies at low temperature have been carried out, which indicated that the activation energy was reduced with Sn incorporation. Kelvin probe force microscopy was performed on the films to evaluate work function and correlated to the metal-semiconductor barrier indicating Zn0.7Sn0.3O films had the smallest barrier for charge injection. Organic-inorganic hybrid complementary inverters with a maximum gain of 10 were fabricated by integrating ZTO TFTs with poly-3-hexylthiophene (P3HT) transistors.

Top-gate hybrid complementary inverters using pentacene and amorphous InGaZnO thin-film transistors with high operational stability

We report on the operational stability of low-voltage hybrid organic-inorganic complementary inverters with a top-gate bottom source-drain geometry. The inverters are comprised of p-channel pentacene and n-channel amorphous InGaZnO thin-film transistors (TFTs) with bi-layer gate dielectrics formed from an amorphous layer of a fluoropolymer (CYTOP) and a high-k layer of Al2O3. The p- and n- channel TFTs show saturation mobility values of 0.1 ± 0.01 and 5.0 ± 0.5 cm2/Vs, respectively. The individual transistors show high electrical stability with less than 6% drain-to-source current variations after 1 h direct current (DC) bias stress. Complementary inverters yield hysteresis-free voltage transfer characteristics for forward and reverse input biases with static DC gain values larger than 45 V/V at 8 V before and after being subjected to different conditions of electrical stress. Small and reversible variations of the switching threshold voltage of the inverters during these stress tests are compatible with the observed stability of the individual TFTs.

Vertically Stacked Hybrid Complementary Memory Inverter Employing Ferroelectric Polymer

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