Abstract
We report a hybrid material system which couples a dry-transfer-processed p-type MoTe2 nanosheet and a conventional photolithography-patterned n-type amorphous InGaZnO (IGZO) thin-film. The PN junction diode shows a good ideality factor of 1.57 and a high ON/OFF rectification ratio of ∼3 × 104. Under illumination, our PN diode shows somewhat stable only responding to high-energy photons of blue and ultraviolet. Our CMOS inverter composed of p-MoTe2 bottom-gate field-effect transistor and n-IGZO top-gate field-effect transistors. Our 2D nanosheet – oxide thin film CMOS inverter shows high voltage gains as high as ~40 at 5 V, low power consumption less than ~ a few nW at 1 V, and ~200 μs switching speed. Both hybrid PN junction diode and complementary (CMOS) inverters are realized by such novel hybrid material system that now opens any further possibilities toward practical applications of 2D nanosheets combined with existing technologies. Figure 1
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