For the past 60 years, the number of silicon transistors the building blocks of integrated circuits that can be packed onto a microchip has doubled every two years. This phenomenon, famously termed Moores Law, has driven technological progress. However, this trajectory is approaching a barrier known as the Silicon limit. At sizes below a certain threshold, the efficiency of silicon diminishes, posing a challenge to continued miniaturization. Thus, the development of novel transistor materials has become a critical step towards realizing beyond-silicon nano-electronics. Graphene, a two-dimensional material composed of carbon atoms arranged in a hexagonal lattice, has risen to prominence as a potential way forward in the field of nano-electronic devices due to its numerous advantages, including high electron and hole mobilities, an atom-thin structure, and the ease of doping to enhance conductivity. However, the lack of a band gap in graphene poses a significant challenge in designing efficient nano-electronic devices. While cutting graphene into nanoribbons can open a band gap, further scaling down graphene nanoribbons will be difficult and costly. Therefore, alternative approaches to further enlarging the band gap based on the current size scale are essential. In this study, we propose a novel method to successfully increase the band gap of 7-armchair nanoribbons by introducing the pre-designed shape of cutting. Additionally, by further manipulating the cutting shape, we also propose a method to increase carriers mobility while retaining the band gap. These findings represent a significant advancement in optimizing the electrical performance of future carbon-based transistors. The utilization of pre-designed cutting shapes offers a flexible approach to tailor device performance according to specific requirements, thereby enhancing the versatility and functionality of carbon-based electronic devices.
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