Imagine a material as thin as a single atom, yet stronger than steel and more conductive than copper. This is graphene, a two-dimensional wonder material with a unique monolayer hexagonal honeycomb lattice structure. Its exceptional electrical properties, particularly its high carrier mobility, have sparked widespread interest in the scientific community for potential applications in electronics.However, because its conduction and valence bands intersect at the Dirac point, it behaves as a zero-bandgap semimetal, limiting its use in electronic devices. Therefore, opening a bandgap has become a focal research task in the scientific community. This paper explains the inherent conductivity of intrinsic graphene and summarizes how doping can theoretically further enhance its conductivity. Through further research on the development of graphene doping methods, this article primarily introduces how adsorption doping and lattice doping techniques can open the bandgap of graphene. It analyzes the stability of different doping types to achieve their application in nanoelectronic devices.
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