Abstract Artificial synaptic devices are the hardware foundation of modern computing systems which have shown great potential in overcoming the bottleneck of traditional von-Neumann computing architectures. Organic synaptic transistors have garnered considerable attention due to their merits, such as low cost, low weight, and mechanical flexibility. Various materials are utilized for the charge-capture layer in organic synaptic transistors. Indium gallium zinc oxide (IGZO) is a typical metal oxide semiconductor with a wide bandgap, high carrier mobility, and stable characteristics. Moreover, IGZO is an n-type semiconductor with a lower HOMO and LUMO energy level compared to p-type semiconductor, which has great potential as a capture material to fabricate high-performance synaptic devices. However, the application of IGZO as the trapping layer in organic synaptic transistors has received limited attention. Consequently, an organic synaptic transistor based on organic/inorganic heterojunction was developed. The impact of program/erase time on memory performance was investigated, revealing that the memory window and memory ratio increased as the write/erase time was extended. Additionally, typical synaptic behavior were successfully emulated, including excitatory/inhibitory postsynaptic current (EPSC/ IPSC), paired-pulse facilitation (PPF), paired-pulse depression (PPD), high-pass filtering characteristics, and the transformation of short-term plasticity (STP) to long-term plasticity (LTP). Notably, the synaptic transistor based on an inorganic-organic bilayer heterojunction achieved a high recognition accuracy of 89.2% using the MNIST dataset for handwritten digit training. This study provides a facile route for fabricating high-performance synaptic transistors, paving the way for the development of advanced brain-like computers.
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