Perovskite solar cells (PSCs) have attracted attention as one of the next-generation solar cell. To enhance power conversion efficiency (PCE) of PSCs, a great deal of research has been conducted so far, mainly in the field of material development. However, in-plane cell design for evaluating the performance of PSCs are currently not standardized. In this study, optimization of device structures was investigated for the aim of to minimize charge transfer losses and improve FF and PCE.The fabrication of perovskite solar cell is as follows; (i) as the electron transport layer (ETL), compact TiO2 and mesoporous TiO2 were deposited on FTO glass substrates by spray coating and spin-coating. (ii) K0.025(Cs0.1FA0.9)0.975PbI3 perovskite was deposited by spin-coating using the anti-solvent method1). (iii) Spiro-OMeTAD was spin-coated as the hole transport layer. (iv) The electrodes were insulated by laser etching. (v) Finally, Au was vacuum-deposited and laser-etched again to fabricate the cell.Throughout the two laser etching stages in the cell fabrication process, adjustments are made to the shapes of the ETL/perovskite layer/HTL and the Au electrode. Specifically, performance was compared for three patterns of devices; (a) round-shaped generator section and current-collecting bridge, (b) shorter distance of current-collecting bridge, (c) shorter distance of current-collecting bridge and same width of current-collecting bridge as generator section. Photoelectric conversion characteristics was determined based on I-V characteristics measured under quasi-sunlight (AM 1.5, 100 mW/cm2) irradiation. In all cases, the shading mask area was kept constant at 0.18 cm2.Figure shows images of three patterns of the results of comparing FF from I-V measurements for each device with varying shapes. It can be seen that even PSCs fabricated from the same material exhibit different FF values depending on the cell shapes. PCE and FF were higher in (b) than in (a), with the highest values observed for devices of (c), in which the collector bridge is shortened and the width is increased. In addition, the series resistance (Rs) and shunt resistance (Rsh) were approximated from the slope of the I-V curve. Among the internal resistances, the series resistance (Rs) decreased, leading to an improvement in FF. This is thought to be due to the decrease of series resistance of electron and hole transfer. Figure 1
Read full abstract