Hole Doping Research Articles

Controllable p-type doping and improved conductance of few-layer WSe2 via Lewis acid

Manipulation of the electronic properties of layered transition-metal dichalcogenides (TMDs) is of fundamental significance for a wide range of electronic and optoelectronic applications. Surface charge transfer doping is considered to be a powerful technique to regulate the carrier density of TMDs. Herein, the controllable p-type surface modification of few-layer WSe2by FeCl3Lewis acid with different doping concentrations have been achieved. Effective hole doping of WSe2has been demonstrated using Raman spectra and XPS. Transport properties indicated the p-type FeCl3surface functionalization significantly increased the hole concentration with 1.2 × 1013cm-2, resulting in 6 orders of magnitude improvement for the conductance of FeCl3-modified WSe2compared with pristine WSe2. This work provides a promising approach and facilitate the further advancement of TMDs in electronic and optoelectronic applications.

Thickness and Doping Density Influence of a High-Voltage Inorganic Perovskite Solar Cell: A SCAPS 1-D Simulation Study

Recently, all inorganic perovskite solar cells have triggered great attention thanks to the rising performance during their development in solid state photovoltaics showing enhanced characteristics, such as: good stability, high photoluminescence quantum yield, tunable size, and morphology. In this work, a high open-circuit voltage solar cell based on all-inorganic perovskite through SCAPS simulator program is presented by analysing electron transport layer (ETL), perovskite layer, hole transport layer (HTL) thickness and doping density from a FTO/TiO2/CsPbBr3/Spiro-OMeTAD/Au structure were modified to observe its influence on solar cell performance. Therefore, simulation results show that a thicker ETL hinders carrier transport towards the FTO layer due to larger distance which leads to higher recombination rate, reducing carrier’s lifetime. Albeit high doping density values in ETL enhances the overall solar cell performance. As for the absorber layer, while its thickness increases, carrier collection rate decreases due to recombination impacting Voc, which results from thickness increase. Based on the results, solar cell efficiency improvement is attributed to the built-in electric field as absorber layer doping density increases. While HTL thickness has minimum impact on the solar cell output, doping density enhances device parameters significantly. Summarising the results obtained from thickness and doping density simulations, the optimal solar cell operation was obtained at 10 nm, 600 nm, and 100 nm layer thickness as well as 1020 cm-3, 1016 cm-3, and 1020 cm-3 doping density (TiO2, CsPbBr3 and Spiro-OMeTAD). Results from three different sources, collected from literature, were used to compare, and fitting them along with simulation results.

Realizing synergistic optimization of electrical and thermal transport properties in BiCuSeO ceramics via multi-element doping

In this study, the design of high-entropy alloys (multi-element substitution, Al3+/La3+/Sb3+/Y3+) was used to increase material entropy and improve heat scattering to further reduce thermal conductivity. Concurrently, Ca2+ ion hole doping was used to improve its electrical conductivity. Therefore, a series of Bi0.92−xAl0.02La0.02Sb0.02Y0.02CaxCuSeO (x = 0, 0.02, 0.06, 0.10, and 0.14) ceramics was prepared using a combination of high-energy ball milling and cold isostatic pressing. The multi-element substitution of Al0.02La0.02Sb0.02Y0.02Ca0.02 in the Bi site resulted in a minimum thermal conductivity of 0.35 Wm−1K−1, which is one-third of that of intrinsic BiCuSeO. Simultaneously, the conductivity increased up to 10–20 times that of intrinsic BiCuSeO, proportional to the amount of Ca2+ doping. Furthermore, the optimum component Bi0.82Al0.02La0.02Sb0.02Y0.02Ca0.10CuSeO exhibited an extremely high power factor of 568.55 μWm−1K−2 at 773 K, significantly higher than that of pure BiCuSeO (148.7 μWm−1K−2). Consequently, a peak ZT value of approximately 1.12 was achieved at 773 K, which was 4.48 times higher than that of the pristine BiCuSeO specimen (approximately 0.25). Our findings provide a novel strategy to optimize the thermoelectric properties of BiCuSeO and other materials.

Charge stripe manipulation of superconducting pairing symmetry transition

Charge stripes have been widely observed in many different types of unconventional superconductors, holding varying periods (P\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$${{\\mathcal{P}}}$$\\end{document}) and intensities. However, a general understanding on the interplay between charge stripes and superconducting properties is still incomplete. Here, using large-scale unbiased numerical simulations on a general inhomogeneous Hubbard model, we discover that the charge-stripe period P\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$${{\\mathcal{P}}}$$\\end{document}, which is variable in different real material systems, could dictate the pairing symmetries—d wave for P≥4,s\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$${{\\mathcal{P}}}\\ge 4,s$$\\end{document} and d waves for P≤3\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$${{\\mathcal{P}}}\\le 3$$\\end{document}. In the latter, tuning hole doping and charge-stripe amplitude can trigger a d-s wave transition and magnetic-correlation shift, where the d-wave state converts to a pairing-density wave state, competing with the s wave. These interesting phenomena arise from an unusual stripe-induced selection rule of pairing symmetries around on-stripe region and within inter-stripe region, giving rise to a critical point of P=3\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$${{\\mathcal{P}}}=3$$\\end{document} for the phase transition. In general, our findings offer important insights into the differences in the superconducting pairing mechanisms across many P\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$${{\\mathcal{P}}}$$\\end{document}-dependent superconducting systems, highlighting the decisive role of charge stripe.

Geometric structure and electronic properties of bilayer graphene with a Moire superlattice by interlayer asymmetric tensile strain

Using the density functional theory combined with the effective screening medium method, we investigated the energetics and electronic properties of bilayer graphene, comprising graphene layers without and with tensile strain. An interlayer interaction does not affect the structural reconstruction of each graphene layer despite the bilayer structure possessing a Moire superlattice. The structural asymmetry between the graphene layers causes a potential difference across the layers, leading to electron and hole doping in the layers without and with the tensile strain. Accumulated carriers show unique lateral distribution in each graphene layer, which depends on the interlayer atomic arrangements.

The mysterious magnetic ground state of Ba14MnBi11 is likely self-doped and altermagnetic

Magnetism in the Zintl compound Ba14MnBi11 is rather poorly understood. Experimental claims are largely inconsistent with ab initio calculations, much beyond typical errors of the latter. We revisit this old problem, assuming that the root of the problem may be in nonstoichiometry of existing samples. Our key finding is that the magnetic ground state is indeed very susceptible to charge doping (band filling). Calculations for stoichiometric Ba14MnBi11 give a rather stable ferromagnetic metallic state, in agreement with previous publications. However, by adding exactly one electron per Mn, the system becomes semiconducting as expected, and becomes weakly antiferromagnetic (AF). On the other hand, upon small amount of hole doping, the system transitions to a special type of AF state known as altermagnetism. Furthermore, hole and electron doping-induced phase transitions result from different underlying mechanisms, influencing different exchange pathways. We propose that the inconsistency between experiment and theory is not a failure of the latter, but results from a nontrivial ramification of nonstoichiometry. The possibility of doping-stabilized altermagnetism is exciting.

Possible Superconductivity for Layered Metal Boride Carbide Compounds MB2C2 (M = Alkali, Alkaline-Earth, or Rare-Earth Metals).

The possible emergence of superconductivity in layered metal boride carbide compounds MB2C2 (M = Sc, Y, Be, Ca) was investigated using density functional theory calculations upon the topology of a boron-carbon network and the nature of the metal. ScB2C2 and YB2C2 show metallic and superconductive properties with low critical temperatures (Tcs). The semiconducting BeB2C2 compound may show superconductivity upon carrier doping with a high Tc of 47.8 K by hole doping─comparable to the structurally related MgB2 superconductor─but with a low Tc by electron doping. In contrast, the semiconducting CaB2C2 compound is predicted to be a superconductor by hole and electron doping but with low Tcs. These differences arise from the spatial distribution of electrons at the Fermi level. For compounds with low Tcs, electrons at the Fermi level are localized primarily on B and C π states perpendicular to the BC layers, experiencing minimal influence from atomic oscillations and resulting in weak electron-phonon interactions. Conversely, for a high Tc, electrons are found in σ-bonding states, leading to strong electron-phonon interactions. Electrons at the Fermi level in boron-carbon σ-bonding states seem to be a prerequisite to expect high Tc superconductivity in this kind of compound.

Fermi and Luttinger Arcs: Two Concepts, Realized on One Surface.

We present an analytically solvable model for correlated electrons, which is able to capture the major Fermi surface modifications occurring in both hole- and electron-doped cuprates as a function of doping. The proposed Hamiltonian qualitatively reproduces the results of numerically demanding many-body calculations, here obtained using the dynamical vertex approximation. Our analytical theory provides a transparent description of a precise mechanism, capable of driving the formation of disconnected segments along the Fermi surface (the highly debated "Fermi arcs"), as well as the opening of a pseudogap in hole and electron doping. This occurs through a specific mechanism: The electronic states on the Fermi arcs remain intact, while the Fermi surface part where the gap opens transforms into a Luttinger arc.

Electrical Transport Properties of PbS Quantum Dot/Graphene Heterostructures.

The integration of PbS quantum dots (QDs) with graphene represents a notable advancement in enhancing the optoelectronic properties of quantum-dot-based devices. This study investigated the electrical transport properties of PbS quantum dot (QD)/graphene heterostructures, leveraging the high carrier mobility of graphene. We fabricated QD/graphene/SiO2/Si heterostructures by synthesizing p-type monolayer graphene via chemical vapor deposition and spin-coating PbS QDs on the surface. Then, we used a low-temperature electrical transport measurement system to study the electrical transport properties of the heterostructure under different temperature, gate voltage, and light conditions and compared them with bare graphene samples. The results indicated that the QD/graphene samples exhibited higher resistance than graphene alone, with both resistances slightly increasing with temperature. The QD/graphene samples exhibited significant hole doping, with conductivity increasing from 0.0002 Ω-1 to 0.0007 Ω-1 under gate voltage modulation. As the temperature increased from 5 K to 300 K, hole mobility decreased from 1200 cm2V-1s-1 to 400 cm2V-1s-1 and electron mobility decreased from 800 cm2V-1s-1 to 200 cm2V-1s-1. Infrared illumination reduced resistance, thereby enhancing conductivity, with a resistance change of about 0.4%/mW at a gate voltage of 125 V, demonstrating the potential of these heterostructures for infrared photodetector applications. These findings offer significant insights into the charge transport mechanisms in low-dimensional materials, paving the way for high-performance optoelectronic devices.

Ultrasensitive and durable borophene-based humidity sensors for advanced human-centric applications

Borophene, a novel two-dimensional (2D) nanomaterials with high surface-to-volume ratio and abundant active sites, show great promise for humidity sensing applications, which are crucial for improving human comfort, public health, and device safety. However, traditional fabrication methods, such as drop-coating, face limitations including uncontrollable sensing layer thickness, poor water-damage resistance, and inherent variability between devices. In this work, we present a high-performance humidity sensor fabricated using borophene glass. The sensor demonstrates an impressive detection range (11–97 % RH), exceptional sensitivity (up to 1.83×105% at 97 % RH), low hysteresis (1.245 %), excellent repeatability, and relatively fast response (28.8 s)/recovery (2.6 s) times. Notably, the sensor exhibits thickness-dependent sensing performance, long-term stability, high selectivity, and water-damage resistance. First-principles calculations show that borophene exhibits an adsorption energy of 0.208 eV for H2O molecules, with the hole doping effect following adsorption driving the sensor’s response to varying relative humidity levels. The sensor’s sustained heightened sensitivity under high humidity conditions is attributed to the Grotthuss mechanism. Additionally, the sensor has been successfully integrated into various human-centric applications, including speech recognition, wireless monitoring of respiratory patterns, and non-contact switches. These advancements pave the way for the integration of borophene humidity sensors into smart devices and non-contact control systems, driving innovation in human–computer interaction and healthcare technologies.

Thermal and photochemical degradation of CsGeI3 and CsGeBr3: XPS and optical studies

The toxicity of complex lead halides significantly limits the commercialization and practical application of perovskite solar cells. In recent days, lead-free complex lead halides with a perovskite structure have become increasingly popular, among which germanium systems are the least studied. Here we present for the first time a systematic study of the thermal and photochemical stability of perovskite thin films of CsGeI3 and CsGeBr3. The measurements of optical absorbance and X-ray photoelectron spectra (XPS) of core levels and valence bands of Ge-based halide perovskites after light soaking and heat stress were thoroughly performed. It has been found the effect of thermal and photochemical degradation of Ge perovskites which is accompanied by reduction of I:Ge and Br:Ge ratios and appearance of tetravalent metal species fixed in XPS Ge 2p and Ge 3d spectra. The XPS O 1s measurements of irradiated and annealed Ge-based perovskites and their comparison with spectra of GeO2 have shown that formation of Ge4+-species is not due to metal oxidation but owing to defect-mediated hole-doping. While the Ge2+→Ge4+ process lowers the thermal and photochemical stability of Ge-based perovskites and limits their use in photovoltaics, the temperature induced hole doping is favorable for thermoelectric applications.

Superconductivity in Diamond-Like BC15.

Advancing the compositional space of a compound class can result in intriguing superconductors, such as LaH10. Herein, we performed a comprehensive first-principles structural search on a binary B-C system with various chemical compositions. The identified diamond-like BC15, named d-BC15, is thermodynamically superior to the synthesized BC3 and BC5. Interestingly, d-BC15 shows anisotropic superconductivity resulting from three distinct Fermi surfaces. Its predicted critical temperature (Tc) is 43.6 K at ambient pressure, beyond the McMillan limit. d-BC15 reaches a maximum of around 75 K at 0.43% hole doping due to the substantially enhanced density of states at the Fermi level. Additionally, d-BC15 demonstrates superhard characteristics with a Vickers hardness of 75 GPa. The calculated tensile and shear stresses are 72 and 73 GPa, respectively. The combination of high superconductivity and superhardness in d-BC15 offers new insights into the design of multifunctional materials.

Enhanced Superconductivity of Hydrogenated β12 Borophene.

Borophene stands out among elemental two-dimensional materials due to its extraordinary physical properties, including structural polymorphism, strong anisotropy, metallicity, and the potential for phonon-mediated superconductivity. However, confirming superconductivity in borophene experimentally has been evasive to date, mainly due to the detrimental effects of metallic substrates and its susceptibility to oxidation. In this study, we present an ab initio analysis of superconductivity in the experimentally synthesized hydrogenated β12 borophene, which has been proven to be less prone to oxidation. Our findings demonstrate that hydrogenation significantly enhances both the stability and superconducting properties of β12 borophene. Furthermore, we reveal that tensile strain and hole doping, achievable through various experimental methods, significantly enhance the critical temperature, reaching up to 29 K. These findings not only promote further fundamental research on superconducting borophene and its heterostructures, but also position hydrogenated borophene as a versatile platform for low-dimensional superconducting electronics.

Tuning conduction properties and clarifying thermoelectric performance of P-type half-heusler alloys TiNi1−xCoxSn (0 ≤ x ≤ 0.15)

TiNiSn is an N-type thermoelectric material with a high-power factor composed of low toxicity and abundant elements. TiNiSn also shows P-type electrical conduction by hole doping. In this study, we tune the conduction properties of TiNi1−xCoxSn (0 ≤ x ≤ 0.15) with Co substitution at the Ni site. The samples were prepared by the arc melting method, and thermoelectric properties were investigated up to 800 K. The results of the Hall effect and the Seebeck coefficient measurements indicate that the majority of charge carriers changes from electrons to holes at x ≥ 0.03, suggesting that Co acts as an acceptor. We report for the first time that Ti0.994Ni1.00Co0.051Sn1.01 exhibits ZT = 0.12 at 675 K. This work reveals that Ti0.994Ni1.00Co0.051Sn1.01 could be a potential P-type thermoelectric material operating at high temperatures.

Roles of Impurity Levels in 3d Transition Metal-Doped Two-Dimensional Ga2O3.

Doping engineering is crucial for both fundamental science and emerging applications. While transition metal (TM) dopants exhibit considerable advantages in the tuning of magnetism and conductivity in bulk Ga2O3, investigations on TM-doped two-dimensional (2D) Ga2O3 are scarce, both theoretically and experimentally. In this study, the detailed variations in impurity levels within 3d TM-doped 2D Ga2O3 systems have been explored via first-principles calculations using the generalized gradient approximation (GGA) +U method. Our results show that the Co impurity tends to incorporate on the tetrahedral GaII site, while the other dopants favor square pyramidal GaI sites in 2D Ga2O3. Moreover, Sc3+, Ti4+, V4+, Cr3+, Mn3+, Fe3+, Co3+, Ni3+, Cu2+, and Zn2+ are the energetically favorable charge states. Importantly, a transition from n-type to p-type conductivity occurs at the threshold Cu element as determined by the defect formation energies and partial density of states (PDOS), which can be ascribed to the shift from electron doping to hole doping with respect to the increase in the atomic number in the 3d TM group. Moreover, the spin configurations in the presence of the square pyramidal and tetrahedral coordinated crystal field effects are investigated in detail, and a transition from high-spin to low-spin arrangement is observed. As the atomic number of the 3d TM dopant increases, the percentage contribution of O ions to the total magnetic moment significantly increases due to the electronegativity effect. Additionally, the formed 3d bands for most TM dopants are located near the Fermi level, which can be of significant benefit to the transformation of the absorbing region from ultraviolet to visible/infrared light. Our results provide theoretical guidance for designing 2D Ga2O3 towards optoelectronic and spintronic applications.

Two-Gap Superconductivity and the Decisive Role of Rare-Earth d Electrons in Infinite-Layer Nickelates.

We present a theoretical prediction of a phonon-mediated two-gap superconductivity in infinite-layer nickelates Nd_{1-x}Sr_{x}NiO_{2} by performing abinitio GW and GW perturbation theory calculations. Electron GW self-energy effects significantly alter the characters of the two-band Fermi surface and enhance the electron-phonon coupling, compared with results based on density functional theory. Solutions of the fully k-dependent anisotropic Eliashberg equations yield two dominant s-wave superconducting gaps-a large gap on a band of rare-earth Nd d and interstitial orbital characters and a small gap on a band of transition-metal Ni d character. Increasing hole doping induces a non-rigid-band response in the electronic structure, leading to a rapid drop of the superconducting T_{c} in the overdoped regime in agreement with experiments.

What do we learn from impurities and disorder in high-Tc cuprates?

A series of experimental studies established that the differing morphologies of the phase diagrams versus hole doping nh of the various cuprate families are mostly controlled by defects and disorder. In the minimally disordered cuprate Yttrium Baryum Copper Oxide (YBCO) we introduced controlled detfects that allowed us to probe the metallic and superconducting states. We demonstrate that the extent of the spin glass phase and the superconducting dome can be controlled by the concentration of spinless (Zn, Li) impurities substituted on the planar Cu sites. NMR frequency shift measurements establish that these defects induce, in their vicinity, a cloud with a Kondo-like paramagnetic behavior. Its “Kondo” temperature and spatial extent differ markedly between the pseudogap and strange metal regimes. We have performed transport measurements on single crystals with a controlled content of in-plane vacancies introduced by electron irradiation. At high T, the inelastic scattering of the carriers has been found independent of disorder and completely governed by the excitations of the correlated electronic state. The low T upturns in the resistivity associated with single-site Kondo-like scattering are qualitatively in agreement with local magnetism induced by spinless impurities. The apparent metal insulator crossover is only detected for a very large defect content, and part of the large resistivity upturn remains connected with Kondo-like paramagnetism. In the superconducting state, the defect-induced reduction of Tc scales linearly with the increase in residual resistivity induced by disorder. High-field magnetoresistance experiments permit us to determine the paraconductivity due to superconducting fluctuations. The latter vanishes beyond a temperature T’c and a field H’c that both decrease with increasing in-plane defect content. In the pseudogap regime, the weaker decrease of T’c with respect to that of Tc reveals a large loss of superconducting phase coherence in the presence of disorder. In light of our experimental results, we initiate a discussion of its interplay with pair breaking. Our data also permit us to confirm that the differing phase diagrams are due to competing orders or disorders that are family-specific. In the ideal phase diagram of a disorder-free cuprate, 2D superconductivity should persist at low doping. This ensemble of experimental results provides serious challenges for the theoretical understanding of superconductivity in these correlated electron systems.

Kinetic ferromagnetism and topological magnons of the hole-doped Kitaev spin liquid

We study the effect of hole doping on the Kitaev spin liquid (KSL) and find that for ferromagnetic (FM) Kitaev exchange K the system is very susceptible to the formation of a FM spin polarization. Through density matrix renormalization group simulations on finite systems, we uncover that the introduction of a single hole, corresponding to ≈1% hole doping for the system size we consider, with a hopping strength of just t ~ 0.28K is enough to disrupt fractionalization and polarize the spins in the [001] direction due to an order-by-disorder mechanism. Taking into account a material relevant FM anisotropic exchange Γ drives the polarization towards the [111] direction via a transition into a topological FM state with chiral magnon excitations. We develop a parton mean-field theory incorporating fermionic holons and bosonic magnons, which accounts for the doping induced FM phases and topological magnon excitations. We discuss experimental implications for Kitaev candidate materials.

Pressure-Induced YbFe2O4-Type to Spinel Structural Change of InGaMgO4

Spinel-type InGaMgO4 with a = 8.56615(3) Å was prepared by treating layered YbFe2O4-type InGaMgO4 at 6 GPa and 1473 K. DFT calculation and Rietveld analysis of synchrotron X-ray powder diffraction data revealed the inverse spinel structure with In3+:Ga3+/Mg2+ = 0.726:0.274 in the tetrahedral site and 0.137:0.863 in the octahedral site. InGaMgO4 spinel is an insulator with an experimental band gap of 2.80 eV, and the attempt at hole doping by post-annealing in a reducing atmosphere to introduce an oxygen defect was unsuccessful. This is the first report of the bulk synthesis of AB2O4 compounds with both YbFe2O4 and spinel polymorphs.

Efficient Charge Transfer in Graphene/CrOCl Heterostructures by van der Waals Interfacial Coupling.

Due to the large volume of exposed atoms and electrons at the surface of two-dimensional materials, interfacial charge coupling has been proven as an efficient strategy to engineer the electronic structures of two-dimensional materials assembled in van der Waals heterostructures. Recently, heterostructures formed by graphene stacked with CrOCl have demonstrated intriguing quantum states, including a distorted quantum Hall phase in the monolayer graphene and the unconventional correlated insulator in the bilayer graphene. Yet, the understanding of the interlayer charge coupling in the heterostructure remains challenging. Here, we demonstrate clear evidences of efficient hole doping in the interfacial-coupled graphene/CrOCl heterostructure by detailed Raman spectroscopy and electrical transport measurements. The observation of significant blue shifts and stiffness of graphene Raman modes quantitatively determines the concentration of hole injection of about 1.2 × 1013 cm-2 from CrOCl to graphene, which is highly consistent with the enhanced conductivity of graphene. First-principles calculations based on density functional theory reveal that due to the large work function difference and the electronegativity of Cl atoms in CrOCl, the electrons are efficiently transferred from graphene to CrOCl, leading to hole doping in graphene. Our findings provide clues for understanding the exotic physical properties of graphene/CrOCl heterostructures, paving the way for further engineering of quantum electronic states by efficient interfacial charge coupling in van der Waals heterostructures.