High Power Factor Research Articles

A Hybrid Quasi-Single-Stage AC-DC Converter with Low Twice-Line-Frequency Output Voltage Ripple

Power factor correction (PFC) converters have been frequently employed in various switching power supply devices to reduce input current harmonics. However, the PFC converter suffers from an obvious twice-line-frequency output voltage ripple due to the instantaneous power imbalance between constant output power and variable input power. Suppression of twice-line-frequency ripple usually can be realized by the post-stage DC-DC converter of the two-stage cascade PFC converter; however, the two-stage cascade PFC structure is challenging to realize high efficiency since the energy is transferred twice. To achieve high power factor, high efficiency, and low twice-line-frequency ripple, a hybrid quasi-single-stage (QSS) AC-DC converter is presented in this paper, which consists of a dual output hybrid Boost/Flyback PFC converter and a Buck ripple compensation circuit (RCC). The fundamental principles of the proposed converter and the critical conditions of operation mode transition are discussed in the paper. To confirm that the twice-line-frequency ripple is effectively suppressed, the small signal model of Buck RCC is built and analyzed. Moreover, the main characteristics, including operation mode transition angle, input current, power factor, and switching frequency of the proposed hybrid QSS AC-DC converter, are analyzed. By building a 120 W experimental prototype to validate the feasibility of the proposed hybrid QSS AC-DC converter, the experimental results show that the proposed converter can realize PFC function with high efficiency and extremely low twice-line-frequency output voltage ripple.

Excellent thermoelectric transport performance in semiconducting hhk-silicene

Unlike graphene-like silicene, a recently reported hybrid honeycomb-kagome (hhk) silicene is a semiconductor instead of a gapless Dirac-cone, which has great potential applications in semiconducting devices. Here, using first-principles calculations combined with Boltzmann transport equation, we find that hhk-silicene has high Seebeck coefficient and power factor as arising from the moderate band-gap and low effective mass. Meanwhile, compared to graphene-like silicene, the soften acoustic branches and enhanced anharmonicity lead to the extremely low lattice thermal conductivity, i.e., 0.68 W mK−1 at 300 K. Calculated thermoelectric figure of merit reaches 1.98 at 300 K, which is a recorded value among two-dimensional materials, indicating the potential of hhk-silicene as a thermoelectric material.

Realizing excellent thermoelectric performance in Ag-doped Cu2SnSe3-ZnSe solid solution by symmetry modification and stacking promotion

Ternary Cu2SnSe3 exhibits an inherent low symmetry and an unfavorable Seebeck coefficient. By strategic alloying with the highly symmetrical ZnSe, the transformation of a monoclinic structure into a tetragonal one was realized, yielding a higher band degeneracy in the electronic band. Therefore, the highest power factor in Cu2SnSe3-ZnSe solid solution reached 7.39 μW cm−1 K−2 at 773 K. Accompanied by this, the energy barrier for slip initiation during the stacking formation decreased, enabling a higher possibility of stacking faults and twins and a low lattice thermal conductivity as 0.79 W m−1 K−1 at 773 K for (Cu2SnSe3)0.6(ZnSe)0.4. Based on ZnSe alloying, the weaker covalent AgSe bonds are introduced to reduce the phonon velocities and facilitate mass fluctuation by Ag-substitution for Cu, resulting in a very low lattice thermal conductivity as 0.49 W m−1 K−1 at 773 K for (Ag0.2Cu1.8SnSe3)0.6(ZnSe)0.4. Eventually, an excellent ZT of 0.98 was achieved at 773 K for (Ag0.2Cu1.8SnSe3)0.6(ZnSe)0.4 through a progressive optimization on thermoelectric properties. Our work underscored the pivotal role of enhancing structural symmetry, increasing stacking nucleation probability and weakening covalent bonds in realizing excellent thermoelectric performance.

Filtering low‐energy carriers to enhance thermoelectric performance of Cd‐doped SnSe via incorporation of MXene sheets

AbstractSnSe‐based materials have attracted widespread attention in thermoelectrics due to their outstanding thermoelectric performance. However, the pristine and unmodified polycrystalline SnSe reveals poor electrical properties. Doping and constructing nanostructured composite architectures to produce energy filtering effect proved to be an effective method to strengthen thermoelectric performance. In this study, Ti3C2/Sn0.98Cd0.02Se composites are successfully fabricated by the solvothermal method combined with the electrostatic self‐assembly method and spark plasma sintering. The phase interface introduced by incorporating Ti3C2 into Sn0.98Cd0.02Se can effectively filter low‐energy carriers due to its generation of energy barriers, thereby the Seebeck coefficient of x wt% Ti3C2/Sn0.98Cd0.02Se x = (0.05, 0.5, 1) samples is better than that of the pristine Sn0.98Cd0.02Se over the whole temperature range. Meanwhile, high conductivity was also obtained in 1 wt% Ti3C2/Sn0.98Cd0.02Se sample so that the high power factor of 3.31 μWcm−1K−2 was acquired at 773 K. Ultimately, a peak ZT value of 0.41 was obtained at 773 K, compared with pristine Sn0.98Cd0.02Se, and the thermoelectric performance improved by 24%. This study offers an available approach to efficiently enhance the thermoelectric properties of polycrystalline SnSe‐based materials.

Janus breathing-Kagome lattice Nb3TeX7 (X = Cl, Br and I) with low thermal conductivity and high thermoelectric figure of merit

Kagome lattices have attracted much attention because of their potential in superconductivity and topological applications. In this work, we proposed three two-dimensional Janus breathing-Kagome lattices, Nb3TeCl7, Nb3TeBr7 and Nb3TeI7, and further investigated their stability, electronic and thermoelectric (TE) transport performance. We illustrated that the three materials all possess high stability, and low cleavage energy of 0.21–0.22 J/m2. Besides, they exhibit common features of Kagome lattices, such as fat bands and van Hove singularities near band-edges, which lead to high Seebeck coefficient (0.37–0.57 mV/K) and TE power factor of (2.79 − 3.71 mW/K2m). Further, owing to their asymmetric Janus structures, the strong coupling between acoustic and optical phonons, as well as low frequency for lying-phonons, the three lattices also possess low lattice thermal conductivity of 1.06–2.76 W/mK. Ultimately, they deliver promising TE figure of merit of {0.28, 0.39, 0.43} at 300 K, and increase further to {1.09, 1.39, 1.40} at 700 K, demonstrating breathing-Kagome lattice Nb3TeX7 are suitable candidates in TE application.

Constructing of amorphous/PbSe/amorphous multiple quantum wells with record high thermoelectric properties

Quantum well (QW) is one of the proposals to improve the thermoelectric properties. However, previous studies have shown that the large electron and phonon tunneling across the layers in semiconductor-based QWs and oxide-based QWs, respectively, are the two main challenges that need to be addressed. In this work, PbSe/amorphous-SrTiO3 (α-STO) supperlattices with a multiple quantum-well (MQW) structure can overcome both limitations. We demonstrate that the PbSe/α-STO MQW shows a high power factor of ∼ 24.5 μW cm−1K−2 at room temperature due to the strong quantum confine effect. In addition, the amorphous-SrTiO3 layer can engender intrinsically low thermal conductivity (0.27± 0.05 W m−1 K−1). The maximum estimated zT value is 2.7 for PbSe/α-STO MQW at room temperature, which is more than 1800 % higher than that of pure PbSe films (zT = 0.15).

Enhanced thermoelectric performance of iso-valent Al substituted Bi2S3via carrier tuning and multiscale phonon scattering

Bismuth sulphide is one of the promising thermoelectric material due to its low thermal conductivity, less toxicity, and abundance in nature. This work analyzed an Al-substituted Bi2S3 compounds for mid-temperature thermoelectric applications prepared by hydrothermal route. The combination of stacking faults and point defects significantly improved the phonon scattering, resulting in decreased thermal conductivity in (x = 0.10) Al substituted sample with the value of 0.498 Wm−1K−1 at 623 K. Also, it simultaneously contributes to the enhancement in carrier concentration of −2.15 × 1019 cm−3, resulting the increased electrical conductivity of 10,142 Sm-1 at 563 K. Further, x = 0.025 Al substitution in Bi2-xAlxS3 leads to a high power factor of 338 Wm−1K-2 and a low phonon thermal conductivity of 0.578 μWm−1K−1, leading to a maximum zT of 0.30 at 623 K.

Enhanced thermoelectric figure-of-merit in ‘defective’ half-Heusler Nb0.8CoSb

The half Heusler alloys are potential mid-to-high temperature range thermoelectrics due to their high power factor, solid structural stability and high mechanical strength. However, the high lattice thermal conductivity inherent to these materials reduces the zT, rendering them less useful for practical applications. The ‘defective’ half-Heuslers provide an attractive alternative to mitigate these issues. In these materials, the intrinsic lattice defects present in the form of vacancies lower the lattice thermal conductivity substantially. Here, we study the effect of excess Nb and Sn doping in the defective half Heuslers Nb0.8+δCoSb1−xSnx. We show that Sn doping allows for: (i) optimizing the carrier concentration with a much finer control than if only δ is increased, and (ii) incorporation of a higher concentration of Nb in the structure. A combination of optimized carrier concentration and synergistic changes in the band structure, including the appearance of a new flat band near 50 meV above the Fermi energy due to excess Nb, suppresses the bipolarity and enhances the thermopower further at high temperatures as the average band effective mass of the carriers increases. We, therefore, obtain a high zT exceeding 1 at 1100 K for Nb0.85CoSb0.95Sn0.05. This value is ≈ 15% higher than the highest zT previously reported.

Average current mode controller for bridgeless PFC SEPIC converter with second-order model reduction operated in continuous conduction mode.

This paper proposes an average current mode controller (ACMC) for a single-phase bridgeless power factor correction (PFC) circuit using a single ended primary inductor converter (SEPIC) via second-order model reduction. The superiority of the proposed controller is PFC accomplished at power up to 350 W with high efficiency via the second-order model reduction. The design and implementation of ACMC on the converter operated with continuous conduction mode (CCM) is explained in detail. ACMC forces input current to follow sinusoidal current reference at different power levels and sustain high power factor (PF). The proposed controller is designed based on the theoretical analysis operation of the circuit. For verification, MATLAB/Simulink simulations are carried out and validation through an experiment test rig for 110-220 Vrms input, 100 Vdc/ 350 W output prototype at 20 kHz switching frequency. It is proven that the proposed controller strategy accomplishes high PF, high efficiency and conformity with the simulation.

Enhanced Thermoelectric Properties of Sb2Te3 Thin Films by In Doping

Flexible Sb2Te3-based thermoelectric (TE) materials are promising candidates for fabricating energy devices that power wearable electronics and sensors. Enhancing the TE properties of Sb2Te3 thin films represents a significant scientific investigation. In this work, a thermal diffusion method is applied to prepare the In-doped Sb2Te3 thin film. In doping can lead to a high Seebeck coefficient of ~137.04 μV K−1 as well as moderate electrical conductivity. As a result, the high power factor of ~18.22 μW cm−1 K−2 at 303 K is achieved. Moreover, In doping could reduce the thermal conductivity owing to the increase in phonon scattering. Finally, the high ZT values of ~0.47 at room temperature (303 K) and ~0.6 at 453 K are obtained. This indicates that In doping is a highly promising and effective approach to improving the TE performance of Sb2Te3 thin films.

Clathrate structure of YB3C3 for high-performance thermoelectrics with superior mechanical properties

Exploring high-performance thermoelectric materials with improved mechanical properties is important for broadening the application scope and the assembly requirement of stable devices. This work presents an effective strategy to discover hard thermoelectric material by inserting foreign atoms in the rigid covalent framework. We demonstrate this in boron-carbon clathrate VII structure, showing a promising candidate for highly efficient thermoelectric energy conversion, especially with Y atom filled in the cage, with a peak zT of 0.73 at 1,000 K. The ab initio calculations indicate that YB3C3 system has low lattice thermal conductivity of 4.5 W/(m·K) at 1,000 K due to the strong rattling of encaged Y atom. The strongly covalent framework provides highly degenerate band structures consisting of heavy and light electron pockets, which can maintain high carrier mobility arising from small effective mass and thus large group velocity. Consequently, high power factor can be achieved in YB3C3 for both electron and hole doping. In addition, it exhibits well mechanical properties and a Vickers hardness of 23.7 GPa because of the strong covalent boron-carbon framework. This work provides a novel avenue for the search of high-performance thermoelectric materials with excellent mechanical properties, based on boron-carbon clathrate structure.

Hybrid Data-Driven Discovery of High-Performance Silver Selenide-Based Thermoelectric Composites.

Optimizing material compositions often enhances thermoelectric performances. However, the large selection of possible base elements and dopants results in a vast composition design space that is too large to systematically search using solely domain knowledge. To address this challenge, a hybrid data-driven strategy that integrates Bayesian optimization (BO) and Gaussian process regression (GPR) is proposed to optimize the composition of five elements (Ag, Se, S, Cu, and Te) in AgSe-based thermoelectric materials. Data is collected from the literature to provide prior knowledge for the initial GPR model, which is updated by actively collected experimental data during the iteration between BO and experiments. Within seven iterations, the optimized AgSe-based materials prepared using a simple high-throughput ink mixing and blade coating method deliver a high power factor of 2100 µW m-1 K-2 , which is a 75% improvement from the baseline composite (nominal composition of Ag2 Se1 ). The success of this study provides opportunities to generalize the demonstrated active machine learning technique to accelerate the development and optimization of a wide range of material systems with reduced experimental trials.

Two-band Model with High Thermoelectric Power Factor and Its Application to FeSe Thin Film

Two-band Model with High Thermoelectric Power Factor and Its Application to FeSe Thin Film

Flexible Carbon Nanotube-Epitaxially Grown Nanocrystals for Micro-Thermoelectric Modules.

Flexible thermoelectric materials have attracted increasing interest because of their potential use in thermal energy harvesting and high-spatial-resolution thermal management. However, a high-performance flexible micro-thermoelectric device (TED) compatible with the microelectronics fabrication process has not yet been developed. Here a universal epitaxial growth strategy is reported guided by 1D van der Waals-coupling, to fabricate freestanding and flexible hybrids comprised of single-wall carbon nanotubes and ordered (Bi,Sb)2 Te3 nanocrystals. High power factors ranging from ≈1680 to ≈1020 µW m-1 K-2 in the temperature range of 300-480 K, combined with a low thermal conductivity yield a high average figure of merit of ≈0.81. The fabricated flexible micro-TED module consisting of two p-n couples of freestanding thermoelectric hybrids has an unprecedented open circuit voltage of ≈22.7 mV and a power density of ≈0.36 W cm-2 under ≈30 K temperature difference, and a net cooling temperature of ≈22.4 K and a heat absorption density of ≈92.5 W cm-2 .

DBD-streamer mode transition of atmospheric-pressure plasma jet applied on water with varying distance and AC power

The discharge of atmospheric-pressure plasma jet (APPJ) applied on the water was studied by varying an air gap between a powered electrode and the water, and the alternating current power. It was found that the streamers were converged by the air flow to form a streamer bridge to allow current flow across the air gap to transition from a dielectric barrier discharge (DBD) mode to a streamer mode. Because the AC power alternates periodically, this study proposed an analysis without the parameter of time by the voltage amplitude to power characteristic. It was found that the longer distance required higher voltage amplitude and power to transition. Prior research of plasma rarely mentioned the real power and the reactive power, which are essential for electric devices. Because different discharge mode produces different species, this study proposed a simple method to analyze and predict discharge modes based on the power factor, which presents the relationship of the real power and the reactive power. It was found that the streamer mode had a higher power factor than the DBD mode, and thus the power factor decides the discharge mode. Therefore, a power factor analysis can be a systematic basis to produce the required discharge by changing the equivalent capacitance and resistance to change the reactive power and real power. This study proposed a simple method to analyze periodic discharge by the intensified charge-coupled device (ICCD). A period of the AC was divided into twelve timings. For each timing, each shot was configured to have the minimum exposure time to avoid the afterimage. Thousands of shots were overlapped into one snapshot to increase the fluorescence and make such snapshot more representative for the timing. Snapshots show that the streamer bridge was only formed in specific timings periodically.

Realizing high thermoelectric performance in CeCl3-doped n-type SnSe polycrystals

SnSe is a promising thermoelectric material because of its intrinsic low lattice thermal conductivity. However, the inferior electrical transport properties restrict the thermoelectric performance of n-type SnSe polycrystals especially at lower temperature range. In this work, an effective strategy to enhance the performance of n-type SnSe polycrystals by CeCl3 doping is reported. CeCl3 doping increased both the carrier concentration and electrical conductivity. The high weighted mobility contributed to the high power factor over the whole temperature range. Combined with the reduced thermal conductivity, a peak zT of ∼1.3 at 823 K was obtained in SnSe0.92+1 mol% CeCl3 with an average zT of ∼0.36 in the temperature range of 300–773 K. This work suggests that CeCl3 doping is an effective way to optimize the thermoelectric properties of n-type SnSe polycrystals.

Eco-Friendly Cerium-Cobalt Counter-Doped Bi2Se3 Nanoparticulate Semiconductor: Synergistic Doping Effect for Enhanced Thermoelectric Generation.

Metal chalcogenides are primarily used for thermoelectric applications due to their enormous potential to convert waste heat into valuable energy. Several studies focused on single or dual aliovalent doping techniques to enhance thermoelectric properties in semiconductor materials; however, these dopants enhance one property while deteriorating others due to the interdependency of these properties or may render the host material toxic. Therefore, a strategic doping approach is vital to harness the full potential of doping to improve the efficiency of thermoelectric generation while restoring the base material eco-friendly. Here, we report a well-designed counter-doped eco-friendly nanomaterial system (~70 nm) using both isovalent (cerium) and aliovalent (cobalt) in a Bi2Se3 system for enhancing energy conversion efficiency. Substituting cerium for bismuth simultaneously enhances the Seebeck coefficient and electrical conductivity via ionized impurity minimization. The boost in the average electronegativity offered by the self-doped transitional metal cobalt leads to an improvement in the degree of delocalization of the valence electrons. Hence, the new energy state around the Fermi energy serving as electron feed to the conduction band coherently improves the density of the state of conducting electrons. The resulting high power factor and low thermal conductivity contributed to the remarkable improvement in the figure of merit (zT = 0.55) at 473 K for an optimized doping concentration of 0.01 at. %. sample, and a significant nanoparticle size reduction from 400 nm to ~70 nm, making the highly performing materials in this study (Bi2-xCexCo2x3Se3) an excellent thermoelectric generator. The results presented here are higher than several Bi2Se3-based materials already reported.

An Input-Current Shaping and Soft-Switching Drive Circuit Applied to a Piezoelectric Ceramic Actuator.

Piezoelectric ceramic actuators utilize an inverse piezoelectric effect to generate high-frequency vibration energy and are widely used in ultrasonic energy conversion circuits. This paper presents a novel drive circuit with input-current shaping (ICS) and soft-switching features which consists of a front AC-DC full-wave bridge rectifier and a rear DC-AC circuit combining a stacked boost converter and a half-bridge resonant inverter for driving a piezoelectric ceramic actuator. To enable ICS functionality in the proposed drive circuit, the inductor of the stacked boost converter sub-circuit is designed to operate in boundary-conduction mode (BCM). In order to allow the two power switches in the proposed drive circuit to achieve zero-voltage switching (ZVS) characteristics, the resonant circuit of the half-bridge resonant inverter sub-circuit is designed as an inductive load. In this paper, a prototype drive circuit for providing piezoelectric ceramic actuators was successfully implemented. Experimental results tested at 110 V input utility voltage show that high power factor (PF > 0.97), low input current total harmonic distortion (THD < 16%), and ZVS characteristics of the power switch were achieved in the prototype drive circuit.

Solvothermally silver doping boosting the thermoelectric performance of polycrystalline Bi2Te3

Bismuth telluride (Bi2Te3) is one of the most promising thermoelectric materials for commercial application at room temperature, but the thermoelectric performance of these materials still needs to be improved. In this study, we report a type of solvothermally Ag-doped Bi2Te3 microplate. By sintering these microplates into polycrystalline bulk materials, a high room-temperature figure of merit of 1 has been achieved. Based on comprehensive micro/nanostructural characterizations, we found that the solvothermally doped Ag in Bi2Te3 plays two main roles, namely as the dopants that effectively induce the point defects of AgBi and forming Ag2Te nanophases. AgBi can provide additional hole charge carriers, effectively adjusting the initially high electron carrier concentration in the system, while the Ag2Te nanophases effectively trigger energy filtering effect to maintain a high Seebeck coefficient, thereby contributing to a competitively high power factor of 25.5 μW cm−1 K−2 at 298 K. Simultaneously, a low thermal conductivity of 0.74 W m−1 K−1 is obtained due to the strong phonon scattering at various lattice imperfections, induced by the solvothermally Ag-doping, which include point defects, grain/phase boundaries, local lattice distortions, and dislocations. This work fills the gap in knowledge on the solvothermally Ag-doping mechanism in Bi2Te3 and provides guidance for the innovative design of high-performing inorganic thermoelectrics.

High-Performance Thermoelectric Flexible Ag2Se-Based Films with Wave-Shaped Buckling via a Thermal Diffusion Method.

Herein, an n-type Ag2Se thermoelectric flexible thin film has been fabricated on a polyimide (PI) substrate via a novel thermal diffusion method, and the thermoelectric performance is well-optimized by adjusting the pressure and temperature of thermal diffusion. All of the Ag2Se films are beneficial to grow (013) preferred orientations, which is conducive to performing a high Seebeck coefficient. By increasing the thermal diffusion temperature, the electrical conductivity can be rationally regulated while maintaining the independence of the Seebeck coefficient, which is mainly attributed to the increased electric mobility. As a result, the fabricated Ag2Se thin film achieves a high power factor of 18.25 μW cm-1 K-2 at room temperature and a maximum value of 21.7 μW cm-1 K-2 at 393 K. Additionally, the thermal diffusion method has resulted in a wave-shaped buckling, which is further verified as a promising structure to realize a larger temperature difference by the simulation results of finite element analysis (FEA). Additionally, this unique surface morphology of the Ag2Se thin film also exhibits outstanding mechanical properties, for which the elasticity modulus is only 0.42 GPa. Finally, a flexible round-shaped module assembled with Sb2Te3 has demonstrated an output power of 166 nW at a temperature difference of 50 K. This work not only introduces a new method of preparing Ag2Se thin films but also offers a convincing strategy of optimizing the microstructure to enhance low-grade heat utilization efficiency.