The Near-Space Plasma Electromagnetic Science Experimental Research Apparatus is designed for ground-based simulation of plasma sheath and is capable of providing pure, high-enthalpy, and high-density plasma jets. The high enthalpy implies a high plasma state, which can achieve high Mach equivalent simulation in flight conditions. This paper takes this device as the research object and establishes a multi-physics coupling magnetohydrodynamics model to simulate the heat transfer process under high-power conditions. Through numerical simulation, the distribution rules of plasma temperature and enthalpy value under different power states considering the radiation source are obtained. By combining numerical simulation with experimental verification, the simulated enthalpy and energy conversion efficiency results are compared with experimental data, showing good consistency. The study finds that the enthalpy at the center of the jet outlet is higher, increasing from 5.4 MJ/kg to 9.5 MJ/kg when the high-frequency power increases from 150 kW to 426 kW, with an increase of 4.0 MJ/kg. The overall distribution of plasma jet enthalpy exhibits a central peak, gradually decreasing radially from the center to both sides. Meanwhile, during the axial jet injection process, there is a transition in the radial distribution of temperature and enthalpy, shifting from a saddle-shaped distribution at the coil position to an arch-shaped distribution at the nozzle outlet. In this power range, the energy conversion efficiency of the high-frequency power source ranges from 53% to 30%, with both calculated and measured efficiencies decreasing with increasing power. Additionally, the paper discusses the impact of radiation source terms on the distribution of enthalpy in high-power inductive-coupled plasma. In conclusion, the model proposed in this paper can be used to estimate the outlet enthalpy distribution and energy conversion efficiency of the Near-Space Plasma Electromagnetic Science Experimental Research Apparatus, providing data support for the design, control, and application of the device.