High External Quantum Efficiency Research Articles

Stepwise One-Shot Borylation Reactions for Intersecting DABNA Substructures Exhibiting Bright Yellow‒Green Electroluminescence with EQE Beyond 40% and Mild Roll-Off.

Boron/nitrogen (B/N)-doped polycyclic aromatic hydrocarbons (PAHs) with the multiple resonance (MR) effect are promising for organic light-emitting diodes (OLEDs) because of their narrowband emission and thermally activated delayed fluorescence (TADF) characteristics. Nevertheless, exploring the variety of such emitters is challenging because of the tricky and limited synthetic protocols. Herein, we designed a novel B/N-doped PAH, L-DABNA-1, whose backbone (L-DABNA) could not be achieved via conventional routes (e.g., one-pot borylation or one-shot borylation). We successfully synthesized it through stepwise one-shot borylations with precisely introducing decorations. The unique MR backbone with intersecting DABNA substructures sharing an aniline group, avoiding any para-N-π-B motif, allows L-DABNA-1 to maintain narrowband TADF emission while significantly redshifting to the yellow-green region with a reverse intersystem crossing rate (kRISC) of 1.28 × 105 s-1. An L-DABNA-1-based OLED device achieved a maximum external quantum efficiency (EQE) of over 40% and maintained a high EQE of 36.3% at 1000 cd m-2, with a current efficiency reaching ~170 cd A-1. This work not only demonstrated the great potential of stepwise borylations in synthesizing B/N-doped PAH backbones, expanding their chemical space, but also provided a promising pathway for exploring MR-TADF emitters at longer wavelengths.

Stepwise One‐Shot Borylation Reactions for Intersecting DABNA Substructures Exhibiting Bright Yellow‒Green Electroluminescence with EQE Beyond 40% and Mild Roll‐Off

Boron/nitrogen (B/N)‐doped polycyclic aromatic hydrocarbons (PAHs) with the multiple resonance (MR) effect are promising for organic light‐emitting diodes (OLEDs) because of their narrowband emission and thermally activated delayed fluorescence (TADF) characteristics. Nevertheless, exploring the variety of such emitters is challenging because of the tricky and limited synthetic protocols. Herein, we designed a novel B/N‐doped PAH, L‐DABNA‐1, whose backbone (L‐DABNA) could not be achieved via conventional routes (e.g., one‐pot borylation or one‐shot borylation). We successfully synthesized it through stepwise one‐shot borylations with precisely introducing decorations. The unique MR backbone with intersecting DABNA substructures sharing an aniline group, avoiding any para‐N‐π‐B motif, allows L‐DABNA‐1 to maintain narrowband TADF emission while significantly redshifting to the yellow–green region with a reverse intersystem crossing rate (kRISC) of 1.28 × 105 s−1. An L‐DABNA‐1‐based OLED device achieved a maximum external quantum efficiency (EQE) of over 40% and maintained a high EQE of 36.3% at 1000 cd m−2, with a current efficiency reaching ~170 cd A−1. This work not only demonstrated the great potential of stepwise borylations in synthesizing B/N‐doped PAH backbones, expanding their chemical space, but also provided a promising pathway for exploring MR‐TADF emitters at longer wavelengths.

Enhancing Spin-Orbit Coupling in an Indolocarbazole Multiresonance Emitter by a Sulfur-Containing Peripheral Substituent for a Fast Reverse Intersystem Crossing.

A fast reverse intersystem crossing (RISC) remains an ongoing pursuit for multiresonance (MR) emitters but faces formidable challenges, particularly for indolocarbazole (ICz) derived ones. Here, heavy-atom effect is introduced first to construct ICz-MR emitter using a sulfur-containing substitute, simultaneously enhancing both spin-orbit and spin-vibronic coupling to afford a fast RISC with a rate of 1.2×105s-1, nearly one order of magnitude higher than previous maximum values. The emitter also exhibits an extremely narrow deep-blue emission peaking at 456nm with full-width at half-maxima of merely 12nm and a photoluminescence quantum yield of 92%. Benefiting from its efficient triplet upconversion capability, this emitter achieves not only a high maximum external quantum efficiency (EQE) of 31.1% in organic light-emitting diodes but also greatly alleviates efficiency roll-off, affording record-high EQEs of 29.9% at 1000cdm-2 and 18.7% at 5000cdm-2 among devices with ICz-MR emitters.

Overcoming the EQE × Li-Fi Frequency Constraint by Modulating the PbS CQDs Distribution in Perovskite Film.

Advanced photodetectors are crucial for high-fidelity optical communication. However, the tradeoff between high external quantum efficiency (EQE) and high light fidelity (Li-Fi) frequency often limits data transmission accuracy and timeliness. Here, we report a photodetector consisting of lead sulfide (PbS) colloidal quantum dots (CQDs) with near-infrared responsiveness and perovskite frameworks responsible for the charge transport to overcome the EQE × Li-Fi constraint. Optimizing the PbS CQDs distribution and trap depth in the perovskite layer enhances charge injection, achieving a device gain of 11892% for 1200 nm photons and a response frequency of 24 kHz at -2 V. The device exhibits a record EQE × Li-Fi frequency product of 106 Hz. We have applied the detector to near-infrared optical communications at a data transfer rate of 2000 bits per second (2 kbps) to demonstrate the advances in high fidelity, the device retains over 98% of the original waveform information in its output.

Spin-Valley-Locked Electroluminescence for High-Performance Circularly Polarized Organic Light-Emitting Diodes.

Circularly polarized (CP) organic light-emitting diodes (OLEDs) have attracted attention in potential applications, including novel display and photonic technologies. However, conventional approaches cannot meet the requirements of device performance, such as high dissymmetry factor, high directionality, narrowband emission, simplified device structure, and low costs. Here, we demonstrate spin-valley-locked CP-OLEDs without chiral emitters but based on photonic spin-orbit coupling, where photons with opposite CP characteristics are emitted from different optical valleys. These spin-valley-locked OLEDs exhibit a narrowband emission of 16 nm, a high external quantum efficiency of 3.65%, a maximum luminance of near 98,000 cd/m2, and a gEL of up to 1.80, which are among the best performances of active single-crystal CP-OLEDs, achieved with a simple device structure. This strategy opens an avenue for practical applications toward three-dimensional displays and on-chip CP-OLEDs.

High efficiency in blue TADF OLED using favorable horizontal oriented host

An appropriate host featuring a wide band gap (Eg) and high triplet energy (T1) is crucial for facilitating highly efficient blue-light emitting devices. In this study, 4Ac26CzBz, a new host comprising acridan and carbazole moieties linked to a benzimidazole core, has been synthesized and characterized. Notedly, 4Ac26CzBz exhibits a wide optical gap (Eg) and high triplet energy (T1) of 3.3 and 3.0 eV, respectively, and has been proven a suitable host for blue thermally activated delayed fluorescence (TADF) OLED. By adopting 4TCzBN as a blue-light dopant, a remarkably high device external quantum efficiency of 35.8 % (59.8 cd/A and 62.8 lm/W) and a low turn-on voltage (<3 eV) have been demonstrated, with significant suppression of the efficiency roll-off, maintaining a high efficiency of 29.7 % as luminance at 1000 cd/m2. This excellent performance is deduced from the host’s ambipolar carrier transporting properties, which refer to its ability to transport both electrons and holes effectively, high photoluminescence quantum yield (PLQY) of 98.6 %, and highly horizontal orientation of transition dipole, as determined through diverse analytical measurements. The good material properties of 4Ac26CzBz and the high OLED performance reveal its potential for the next generation’s advanced display and lighting applications.

Enhancing Specific Detectivity and Device Stability in Vacuum-Deposited Organic Photodetectors Utilizing Nonfullerene Acceptors.

Organic photodetector (OPD) studies have undergone a revolutionary transformation by introducing nonfullerene acceptors (NFAs), which provide substantial benefits such as tunable band gaps and enhanced absorption in the visible spectrum. Vacuum-processed small-molecule-based OPD devices are presented in this study by utilizing a blend of boron subphthalocyanine (SubPc) and chlorinated subphthalocyanine (Cl6SubPc) as the active layer. Four different active layer thicknesses are further investigated to understand the intrinsic phenomena, unveiling the suppression of dark current density while maintaining photoexcitation and charge separation efficiency. Experimental results reveal that, at an applied bias of -3 V, the 50-nm-thick active layer achieves a remarkably low dark current density of 1.002 nA cm-2 alongside a high external quantum efficiency (EQE) of 52.932% and a responsivity of 0.226 A W-1. These impressive performance metrics lead to a specific detectivity of 1.263 × 1013 Jones. Furthermore, the findings offer new insights into intrinsic phenomena within the bulk heterojunction (BHJ), such as thermally generated current and exciton quenching. This integration is potentially well-heeled to revolutionize display technology by combining high-sensitivity photodetection, offering new possibilities for novel display panels with sensing applications.

Clar's Aromatic π-Sextet Rule for the Construction of Red Multiple Resonance Emitter.

Despite the proliferation of multiple resonance (MR) materials in the blue to green spectral ranges, red MR emitters remain scarce in the literature, an area that certainly warrants attention for future applications. Here, through a clever application of classic Clar's aromatic π-sextet rule, we triumphantly constructed the first red MR emitter by substituting the conventional benzene ring core with anthracene (fewer π-sextets). Theoretical studies indicate that the quantity of π-sextets ultimately determines the optical bandgap of a molecule, rather than the number of fused benzene rings. Benefiting from the high photoluminescence quantum yield of ~94% and horizontal dipole ratio of ~90%, the corresponding narrowband red (luminescence wavelength: 608 nm) organic light-emitting diode shows a high external quantum efficiency of 27.3%, with only a slight decrease of 3.7% at an elevated luminance level of 100,000 cd/m2.

Performance improvement of red, green and blue InGaN micro-LEDs with distributed Bragg reflector

Abstract Red-green-blue (RGB) micro light-emitting diodes (micro-LEDs) without distributed Bragg reflector (DBR), with air-separating DBR, and with integrated DBR, were demonstrated. The effect of the DBRs as reflectors on the external quantum efficiency (EQE) and electroluminescence (EL) spectra enhancement of RGB micro-LEDs was systematically investigated for realizing higher-performance micro-LEDs for display applications. At 5 A/cm2, the EQEs of the RGB micro-LEDs with integrated DBR were improved by 38%, 33%, and 32%, respectively, with comparison to the RGB DBR free micro-LEDs. Further, the full width at half maximum (FWHM) of the red micro-LEDs was reduced by 4.3 nm at 50 A/cm2 with the integrated DBR due to the higher enhancement of the central wavelength spectrum. The green and blue micro-LEDs with integrated DBR had higher EQE and the red micro-LEDs with integrated DBR had narrower FWHM compared to those with air-separating DBR. However, the peak wavelength of the RGB micro-LEDs with integrated DBR shifted, resulting in a lower color gamut in CIE 1931. The above work provides guidance for future full-color micro-display applications based on RGB InGaN micro-LED technology.&amp;#xD;

Efficient Deep-Blue Organic Light-Emitting Diodes Employing Doublet Sensitization.

Fast and efficient exciton utilization is a crucial solution and highly desirable for achieving high-performance blue organic light-emitting diodes (OLEDs). However, the rate and efficiency of exciton utilization in traditional OLEDs, which employ fully closed-shell materials as emitters, are inevitably limited by spin statistical limitations and transition prohibition. Herein, a new sensitization strategy, namely doublet-sensitized fluorescence (DSF), is proposed to realize high-performance deep-blue electroluminescence. In the DSF-OLED, a doublet-emitting cerium(III) complex, Ce-2, is utilized as sensitizer for multi-resonance thermally activated delayed fluorescence emitter ν-DABNA. Experimental results reveal that holes and electrons predominantly recombine on Ce-2 to form doublet excitons, which subsequently transfer energy to the singlet state of ν-DABNA via exceptionally fast (over 108s-1) and efficient (≈100%) Förster resonance energy transfer for deep-blue emission. Due to the circumvention of spin-flip in the DSF mechanism, near-unit exciton utilization efficiency and remarkably short exciton residence time of 1.36µs are achieved in the proof-of-concept deep-blue DSF-OLED, which achieves a Commission Internationale de l'Eclairage coordinate of (0.13, 0.14), a high external quantum efficiency of 30.0%, and small efficiency roll-off of 14.7% at a luminance of 1000cdm-2. The DSF device exhibits significantly improved operational stability compared with unsensitized reference device.

Rational design of narrowband deep blue MR-TADF dendrimers for high performance solution-processed all fluorescence white OLEDs

Developing solution-processable deep-blue multiple resonances thermally activated delayed fluorescence (MR-TADF) is a formidable challenge. Here, we using a convergent synthesis process successfully developed a series of MR-TADF dendrimers based on C=O/N resonant core (QAO). The alkyl chain alternate-linked functional dendrons not only ensure the narrow-band deep-blue emission but also enable the dendrimers with aggregation-induced emission enhancement (AIEE) properties, which efficiently mitigate the aggregation-induced exciton quenching (ACQ) and obnoxious spectral redshift broadening effect. Notably, the solution-processed deep blue MR-TADF OLEDs achieved a maximum external quantum efficiency (EQE) of 13.5 % and CIE of (0.15, 0.12) with an electroluminescence peak below 450 nm. Further using such dendrimer as a sensitizer for white OLEDs resulted in an optimized high EQE of 18.9 % and a high color-rendering index (CIR) of 81.1 for two and three optical components of white emissions, which are among the highest values of previously reported solution-processed all-fluorescence white OLEDs. This is the first attempt to construct white OLED based on an MR-TADF emitter and the satisfactory results indicate that the flexible dendron engineering strategy can effectively develop high-performance narrow band deep-blue MR-TADF for wide-color gamut display and high CIR white OLEDs.

Narrowband Emission in Pt(II) Complexes via Ligand Engineering for Blue Phosphorescent Organic Light‐Emitting Diodes

AbstractIn this study, three stable tetradentate Pt(II) complexes are synthesized and characterized, namely, Pt‐biPh, Pt‐biPh5tBu, and Pt‐biPh4tBu, tailored for blue phosphorescent organic light‐emitting diodes to realize high‐efficiency and narrowband emissions via ligand engineering. Biphenyl (Pt‐biPh) or tert‐butyl‐modified biphenyl (Pt‐biPh5tBu and Pt‐biPh4tBu) is introduced into the carbene unit of the ligand to control the intermolecular interactions between the Pt(II) phosphors. Pt‐biPh, Pt‐biPh5tBu, and Pt‐biPh4tBu exhibit high photoluminescence quantum yields of 74%, 84%, and 92% with exciton lifetimes of 2.2, 2.3, and 2.5 µs, respectively, demonstrating rapid and efficient light emission. Furthermore, Pt‐biPh, Pt‐biPh5tBu, and Pt‐biPh4tBu show maximum external quantum efficiency (EQE) values of 18.1%, 19.0%, and 21.8%, respectively. Pt‐biPh5tBu and Pt‐biPh4tBu exhibit narrowband emission with a full width at half maximum of 21 nm owing to the small vibrational emission because of their sterically hindered and bulky ligand structures. Moreover, phosphor‐sensitized thermally activated delayed fluorescence devices employing a Pt‐biPh4tBu sensitizer achieve a high EQE of 28.6%. In particular, Pt‐biPh4tBu performs better than the state‐of‐the‐art phosphor as the sensitizer of the blue phosphor‐sensitized thermally activated delayed fluorescence devices in terms of the EQE.

Construction of Concentration Quenching‐Resistant Multi‐Resonance TADF Emitters via Positional Isomerization for OLEDs

AbstractMultiple resonance thermally activated delayed fluorescence (MR‐TADF) emitters are promising for high‐definition organic light‐emitting diodes (OLEDs) due to their high exciton utilization and color purity. However, strong interchromophore interactions cause most MR‐TADF emitters with planar structures to aggregate at high doping concentrations, leading to degraded efficiencies. Herein, using benzenesulfonyl‐functionalized dibenzothiophene sulfoximine with steric effects, three MR‐TADF emitters (2SBN, 3SBN, and 4SBN) are synthesized by coupling the classic DtBuCzB skeleton at different sites. Three emitters exhibit green or blue‐green emission with full width at half maximum (FWHM) values less than 29 nm and photoluminescence quantum yields exceeding 90%. OLEDs based on 2SBN, 3SBN, and 4SBN achieve high maximum external quantum efficiency (EQEmax) values of 30.1%, 27%, and 33.8%, respectively, at a 5 wt.% doping concentration. Notably, due to the distorted conformation of 4SBN and suppressed intermolecular interaction, the OLED remains high EQEmax of 28.9% at a doping concentration of 20 wt.%. These results demonstrate the feasibility of molecular design to modulate spatial conformations via positional isomerism to develop MR‐TADF emitters with reduced concentration quenching.

Room-temperature efficient and tunable interlayer exciton emissions in WS2/WSe2 heterobilayers at high generation rates.

Transition metal dichalcogenide (TMDC) heterobilayers (HBs) have been intensively investigated lately because they offer novel platforms for the exploration of interlayer excitons (IXs). However, the potentials of IXs in TMDC HBs have not been fully studied as efficient and tunable emitters for both photoluminescence (PL) and electroluminescence (EL) at room temperature (RT). Also, the efficiencies of the PL and EL of IXs have not been carefully quantified. In this work, we demonstrate that IX in WS2/WSe2 HBs could serve as promising emitters at high generation rates due to its immunity to efficiency roll-off. Furthermore, by applying gate voltages to balance the electron and hole concentrations and to reinforce the built-in electric fields, high PL quantum yield (QY) and EL external quantum efficiency (EQE) of ∼0.48% and ∼0.11% were achieved at RT, respectively, with generation rates exceeding 1021 cm-2·s-1, which confirms the capabilities of IXs as efficient NIR light emitters by surpassing most of the intralayer emissions from TMDCs.

Dual‐Core Engineering for Efficient Deep‐Blue Multiple Resonance Thermally Activated Delayed Fluorescent Materials

AbstractDeveloping narrowband blue multiple resonance (MR) organic emitters with Commission Internationale de L'Eclairage (CIE) y coordinates &lt;0.1 is essential for advanced display technologies. This study proposes a deep‐blue thermally activated delayed fluorescence (TADF) emitter, named 2BNO, which integrates two independent MR cores. Unlike many TADF materials with single‐bonded dual emitting cores, 2BNO utilizes a steric hindrance‐assisted fluorene bridge to achieve an orthorhombic molecular structure. The dual‐core MR‐TADF emitter shows enhanced light absorption and a high photoluminescence quantum yield. Notably, the emission of 2BNO is not significantly redshifted compared to single‐core compounds and maintains a narrow full width at half‐maximum (FWHM) of 24 nm with CIE coordinates of (0.147, 0.041) in 2Me‐THF solution, nearing the BT.2020 blue standard. Organic light‐emitting diodes (OLEDs) incorporating 2BNO as the emitter exhibit deep‐blue emission at 460 nm with a narrow FWHM of 29 nm and CIE coordinates of (0.14, 0.09). The dual emitting core design significantly improves device efficiency, achieving a high external quantum efficiency (EQE) of 19.8%. The dual‐core molecular design strategy in this work is demonstrated to be effective in promoting the efficiency of the TADF emitters while preserving deep‐blue color purity.

Multiple Enol-Keto Isomerization and Excited-State Unidirectional Intramolecular Proton Transfer Generate Intense, Narrowband Red OLEDs.

A novel series of excited-state intramolecular proton transfer (ESIPT) emitters, namely, DPNA, DPNA-F, and DPNA-tBu, endowed with dual intramolecular hydrogen bonds, were designed and synthesized. In the condensed phase, DPNAs exhibit unmatched absorption and emission spectral features, where the minor 0-0 absorption peak becomes a major one in the emission. Detailed spectroscopic and dynamic approaches conclude fast ground-state equilibrium among enol-enol (EE), enol-keto (EK), and keto-keto (KK) isomers. The equilibrium ratio can be fine-tuned by varying the substitutions in DPNAs. Independent of isomers and excitation wavelength, ultrafast ESIPT takes place for all DPNAs, giving solely KK tautomer emission maximized at >650 nm. The spectral temporal evolution of ESIPT was resolved by a state-of-the-art technique, namely, the transient grating photoluminescence (TGPL), where the rate of EK* → KK* is measured to be (157 fs)-1 for DPNA-tBu, while a stepwise process is resolved for EE* → EK* → KK*, with a rate of EE* → EK* of (72 fs)-1. For all DPNAs, the KK tautomer emission shows a narrowband emission with high photoluminescence quantum yields (PLQY, ∼62% for DPNA in toluene) in the red, offering advantages to fabricate deep-red organic light-emitting diodes (OLED). The resulting OLEDs give high external quantum efficiency with a spectral full width at half-maximum (FWHM) as narrow as ∼40 nm centered at 666-670 nm for DPNAs, fully satisfying the BT. 2020 standard. The unique ESIPT properties and highly intense tautomer emission with a small fwhm thus establish a benchmark for reaching red narrowband organic electroluminescence.

Efficient and Stable Red Perovskite Light-Emitting Diodes via Thermodynamic Crystallization Control.

Efficient and stable red perovskite light-emitting diodes (PeLEDs) demonstrate promising potential in high-definition displays and biomedical applications. Although significant progress has been made in device performance, meeting commercial demands remains a challenge in the aspects of long-term stability and high external quantum efficiency (EQE). Here, an in situ crystallization regulation strategy is developed for optimizing red perovskite films through ingenious vapor design. Mixed vapor containing dimethyl sulfoxide and carbon disulfide (CS2) is incorporated to conventional annealing, which contributes to thermodynamics dominated perovskite crystallization for well-aligned cascade phase arrangement. Additionally, the perovskite surface defect density is minimized by the CS2 molecule adsorption. Consequently, the target perovskite films exhibit smooth exciton energy transfer, reduced defect density, and blocked ion migration pathways. Leveraging these advantages, spectrally stable red PeLEDs are obtained featuring emission at 668, 656, and 648nm, which yield record peak EQEs of 30.08%, 32.14%, and 29.04%, along with prolonged half-lifetimes of 47.7, 60.0, and 43.7h at the initial luminances of 140, 250, and 270cd m-2, respectively. This work provides a universal strategy for optimizing perovskite crystallization and represents a significant stride toward the commercialization of red PeLEDs.

Thermally Activated Delayed Fluorescence and Beyond. Photophysics and Material Design Strategies.

This review focuses on thermally activated delayed fluorescence (TADF). Photophysical properties of Cu(I) complexes and unique organic molecules are addressed. Investigations, based on temperature‐dependent emission studies, micro‐ to femto‐second time‐resolved spectroscopy investigations, quantum mechanical considerations, state‐of‐art calculations, and organic light‐emitting diodes (OLED) device studies, address exciton harvesting mechanisms and photophysical impact of the energy gap ΔE(S1–T1) and spin‐orbit coupling (SOC). We disclose relationship between (i) ΔE(S1–T1) and transition rate k(S1–S0); (ii) SOC, phosphorescence, and intersystem crossing (ISC); (iii) internal/external rigidity, luminescence quantum yield, excitation self‐trapping, and concentration quenching; (iv) environment polarity and state energy tuning, as well as (v) SOC and combined ambient‐temperature TADF/phosphorescence, zero‐field splitting, and spin‐lattice relaxation (at T = 1.2 K). These studies guide us to milestone Cu(I) complexes. Moreover, we demonstrate that fast ISC in organic molecules requires state mixing with an additional, energetically close triplet state. Thus, a guide structure for unique organic TADF molecules with ultra‐fast ISC and reverse‐ISC rates (&gt;109 s−1) combined with ΔE(S1–T1)&lt;10 cm−1 (&lt;1 meV) is presented allowing for ultra‐fast singlet‐triplet equilibrated fluorescence with sub‐microsecond decay. First OLEDs fabricated show high external quantum efficiency of ≈19%. Based on this breakthrough material class, a new exciton harvesting mechanism, the direct singlet harvesting (DSH), is presented.

High‐Efficiency Deep Red Fluorescent Material with Aggregation Induced Emission and the Application in Organic Light‐Emitting Diodes

AbstractThe development of highly efficient deep red materials with emission wavelength beyond 650 nm remains a big challenge due to the constraints imposed by the energy gap rule. In this work, a donor‐acceptor‐donor type emitter, 4,7‐bis (10‐(4‐(tert‐butyl) phenyl)‐10H‐phenothiazin‐3‐yl) benzo[c][1,2,5] thiadiazole (TBPPTZ) is designed and synthesized. Resulting from the slight twist angle between the donor and acceptor units, TBPPTZ exhibits nearly planar conformation and an extended conjugated structure. TBPPTZ shows a deep red emission peak at 687 nm and aggregation induced emission property with a high photoluminescence quantum yield of 45 % in neat thin film. The optimized organic light‐emitting diode (OLEDs) utilizing TBPPTZ as the non‐doped emissive layer obtains a high external quantum efficiency (EQE) up to 2.51 % with an electroluminescence (EL) peak at 676 nm, aligning with the Commission Internationale de L'Eclairage (CIE) coordinates (0.68, 0.31), which shows a small EQE roll‐off of only 5.6 % at 100 cd m−2. Additionally, the doped OLED achieves an EQE up to 5.09 %, with an EL peak at 656 nm and CIE coordinates of (0.65, 0.34). The findings of this research not only contribute to achieve highly efficient deep red OLEDs but also offer a novel and effective deep red molecular strategy to realize high‐quality OLEDs.

Enhanced UV photodetector performance using sputtered Mg-doped ZnO thin film

In this article, we demonstrate UV photodetector synthesized using Mg-doped ZnO thin film (TF) (10 % Mg) grown on a p-Si substrate using the radio frequency (RF) magnetron sputtering system. The fabricated MgZnO TF was annealed at 500 °C in air resulting in notable changes in morphology, optical band gap and crystallinity that significantly improved the UV light sensitivity. The annealed device (MgZnO TF/p-Si) exhibited a remarkable 155-fold increase in photocurrent density compared to the as-deposited device at + 2 V bias. Also, at the same bias the annealed device (500 °C) exhibited high photosensitivity (up to 1262 times), responsivity (20.32 A/W), specific detectivity (1.82 × 1013 Jones) and external quantum efficiency (EQE) (7745 %) in comparison to the as-deposited device. Additionally, the 500 °C device achieved a low noise equivalent power (NEP) of 0.07 × 10−12 W which is about 262 times lower than that of the as-deposited device (18.4 × 10−12 W). Furthermore, on UV illumination (λ = 325 nm) the MgZnO TF/p-Si (500 °C) detector showed fast device response with rise time/fall time values of 0.26 s/0.25 s respectively at + 2 V applied bias.