High Voltage Applications Research Articles

Experimental and Numerical Studies of the Temperature Field in a Dielectrophoretic Cell Separation Device Subject to Joule Heating

Technologies for rapid and high-throughput separation of rare cells from large populations of other types of cells have recently attracted much attention in the field of bioengineering. Among the various cell separation technologies proposed in the past, dielectrophoresis has shown particular promise because of its preciseness of manipulation and noninvasiveness to cells. However, one drawback of dielectrophoresis devices is that their application of high voltage generates Joule heat that exposes the cells within the device to high temperatures. To further explore this problem, this study investigated the temperature field in a previously developed cell separation device in detail. The temperature rise at the bottom of the microfluidic channel in the device was measured using a micro-LIF method. Moreover, the thermofluidic behavior of the cell separation device was numerically investigated by adopting a heat generation model that takes the electric-field-dependent heat generation term into account in the energy equation. Under the operating conditions of the previously developed cell separation device, the experimentally obtained temperature rise in the device was approximately 20 °C, and the numerical simulation results generally agreed well. Next, parametric calculations were performed with changes in the flow rate of the cell sample solution and the solution conductivity, and a temperature increase of more than 40 °C was predicted. The results demonstrated that an increase in temperature within the cell separation device may have a significant impact on the physiological functions of the cells, depending on the operating conditions of the device.

Three-Level Double LLC Resonant Converter with Ripple-Free Input Current for DC Microgrid Application

DC distribution systems have garnered interest in recent years due to their advantages over AC distribution systems, such as their high power conversion efficiency and lack of harmonic issues. An isolated DC-DC converter with low-input noise, high efficiency, and high-power density is required for DC microgrids within DC distribution systems. Although existing DC to DC converters have high efficiency and high power density, they still have input noise problems due to pulsating input currents. Thus, a large input filter should be inserted, which increases the cost and degrades the power density. In this study, a novel three-level double LLC resonant converter with zero-input-current ripple is presented for DC microgrid application with a high-voltage DC bus. The input-current ripple of the proposed converter theoretically decreases to zero without adding large input filters. Moreover, the voltage stress on each main switch is only half of the input voltage when using the modified three-level structure, which enables the use of low-voltage-rated power switches for high-voltage input applications. In addition, all the primary switches and secondary diodes are softly switched over a wide input voltage range. The experimental results of the prototype are presented to verify the performance of the proposed converter.

Design and Implementation of Modular Multi-Level Converter Based HVDC System for Grid Connection

This paper examines Modular Multilevel Converters (MMC) for harnessing power from offshore wind farms. MMCs use many simple Voltage Source Converter (VSC) submodules, enabling high-voltage and high-power applications. They offer faster response times and lower harmonic distortion than traditional two-level VSCs. The paper addresses modelling challenges due to numerous switching devices and discusses the development of Cascaded Two-Level (CTL) converters, which improve output voltage quality. Overall, the study highlights advancements in MMC technology that enhance HVDC transmission capabilities.

PV Based Single Stage Cascaded Seven Level Modular Multilevel Converter with ZSV Control for Grid Interfaced System

Objectives: Climatic perturbation and environmental factors affect solar power generation. When these solar panels are connected to the grid it causes power quality issues such as voltage harmonics, voltage distortion, etc. These problems are addressed in this paper using a distributed MPPT algorithm. Methods: Multilevel inverters have made remarkable contributions to renewable energy, high voltage, and other high-power applications. Hence, a single-stage Cascaded Seven-Level Modular Multilevel Converter (CSLMMC) is used to address the issues. Zero Sequence Voltage (ZSV) control is proposed for producing balanced power during varying irradiance conditions. The proposed method is simulated using MATLAB SIMULINK software. Partial shading is conquered by using distributed MPPT. Findings: The simulation of the proposed system is performed for a three-phase system. The three-phase Cascaded Modular Multilevel Converter is connected to the grid through two loads which are controlled by a Zero Sequence Voltage Controller. Power quality parameters such as current, harmonics, and power are analyzed for the proposed system. Novelty: THD analysis for a five-level cascaded H bridge converter and the proposed systems are compared and presented. Keywords: Photo voltaic, Cascaded seven-level modular multilevel converter, Zero sequence control, Maximum power point tracking, Voltage Source Converter

Fast switching Ga2O3 Schottky barrier power diode with beveled-mesa and BaTiO3 field plate edge termination

Power devices rely on ideal edge termination to suppress the electric field crowding and avoid premature breakdown before the material's critical field is reached. In this work, a hybrid electric field management configuration, featuring the combination of beveled-mesa (BM) termination and high-k oxide BaTiO3 field plate (FP), was implemented in Ga2O3 Schottky barrier diodes (SBDs). This BMFP-SBD realizes a breakdown voltage (BV) of 1.7 kV with extremely low reverse leakage current, outperforming the BM terminated SBD with BV of 0.64 kV and bare SBD with BV of 0.22 kV. Based on the temperature-dependent reverse characteristics, the dominant leakage mechanism transforms from Poole–Frenkel (P–F) emission in BM-SBD to variable-range-hopping (VRH) in BMFP-SBD at high bias. In particular, under switching conditions of di/dt up to 420 A/μs, the BMFP-SBD exhibits superior dynamic switching characteristics with a short reverse recovery time of 10.1 ns, which are comparable with those in advanced commercial SiC SBDs. These findings underscore the potential of Ga2O3 SBD enabled by BM and high-k FP edge termination for high-speed and high-voltage power electronics applications.

Novel 4H–SiC MESFET with high ability in gate capacitances control for high frequency applications

The ability to control the gate capacitances is crucial for high-frequency applications, as it affects the device's frequency characteristics, gain and power handling capabilities. We present a 4H–SiC metal-semiconductor field-effect transistor (MESFET) with high gate capacitance control ability for high-frequency applications. The proposed structure (GCC-MESFET) consists of a step gate and a SiC well for adjusting the channel depletion layer and modifying the channel charges. Therefore, the gate capacitances will be controlled (GCC-MESFET). The proposed structure significantly improves the cut-off frequency (fT) and maximum oscillation frequency (fmax). The fT has increased from 23.5 GHz to 33 GHz and the fmax from 50.1 GHz to 54.4 GHz in the proposed structure compared to a conventional structure (C-MESFET). The results show that the DC maximum output power density (Pmax), DC transconductance (gm), cut-off frequency (fT) and maximum oscillation frequency (fmax) of GCC-MESFET improve in comparison with a conventional structure (C-MESFET). It is necessary to mention that the drain current and the breakdown voltage of the proposed structure increase by 48 % and 20 % respectively, compared with the C-MESFET structure due to modifying the channel charges and adjusting the electric field. So, the proposed structure can be used for high current, high voltage, high-power and high frequency applications.

Accurate Technique for the Calibration of High-Voltage Capacitance and Dissipation Factor Bridges up to 1 kHz

This paper presents a comprehensive methodology for the precise calibration of high-voltage capacitance and dissipation factor (DF) bridges. The technique involves meticulous adjustments using a digital high-precision phase and ratio-measuring system to determine correction factors for DF and capacitance measurements. Unlike other methods that are limited to a narrow range, this approach allows calibration across the entire operational working spectrum of any bridge. While the method has been developed up to 1 kHz, its adaptability for future requirements is facilitated by the developed software. This method has been carried out by calibrating a highly accurate bridge for a capacitor ratio of up to 100, with DFs ranging from −0.01 to 0.01 and currents ranging from 0.1 mA to 1 A. Linear correction factors are established, with their accuracies being rigorously quantified. This methodology achieves expanded uncertainties as low as 3.5 µF/F (3.5 ppm) for capacitance and 2.2 × 10−⁶ for DFs, significantly enhancing measurement reliability across diverse high-voltage capacitor applications.

Hardware Testing Methodologies for Wide Bandgap High-Power Converters

Wide bandgap (WBG) power semiconductor devices are increasingly replacing silicon IGBTs in high-power and high-voltage power electronics applications. However, there is a significant gap in the literature regarding efficient testing methodologies for high-power and high-voltage converters under constrained laboratory resources. This paper addresses this gap by presenting comprehensive, hardware-focused testing methodologies for high-power and high-voltage WBG power semiconductor-based converter bring-up before the control validation phase steps in. The proposed methods enable thorough evaluation and validation of converter hardware, including device switching characteristics, driving circuit functionality, thermal management performance, insulation integrity, and sustained operation at full power. We utilized the double pulse test (DPT) to characterize switching performance in a two-level phase leg configuration, extract circuit parasitics, and validate magnetic components. The DPT was further applied to optimize gate driving circuits, validate overcurrent protection mechanisms, and measure device on-resistance. Additionally, a multicycle test was introduced to rapidly assess steady-state converter performance and estimate efficiency. Recognizing the critical role of thermal management in high-power converters, our methodologies extend to the experimental extraction of key thermal parameters—such as junction-to-ambient thermal resistance and thermal capacitance—via a heat loss injection method. A correlation method between temperature sensor measurements and junction temperature is presented to enhance the accuracy of device temperature monitoring during tests. To ensure reliability and safety, dielectric withstand tests and partial discharge measurements were conducted at both component and converter levels under conventional 60 Hz sinusoidal and high-frequency PWM waveforms. Finally, we highlight the importance of testing converters under full voltage, current, and thermal conditions through power circulating tests with minimal power consumption, applicable to both non-isolated and isolated high-power converters. Practical examples are provided to demonstrate the effectiveness and applicability of these hardware testing methodologies.

Boosting electrochemical performance by regulating rigid-flexible microphase separation of multiblock copolymers

The growth of lithium dendrites and associated safety issues hinder the further development of liquid lithium metal batteries. A novel rigid-flexible multiblock copolymer PBC-mb-PBS was successfully synthesized based on molecular design. Incorporating crystalline rigid phase polybutylene succinate (PBS) into PBC-mb-PBS significantly enhances its tensile strength and low-temperature toughness through physical crosslinking. The flexible polydibutyl 2-(2-cyanoethyl)malonate (PBC) phase with side-chain cyano groups facilitate ionic conduction, forming a LiN-rich stabilized interfacial layer, thereby improving oxidative stability and high-voltage cathode compatibility. A series of multiblock copolymers with varying segment lengths were synthesized to balance mechanical properties and ionic conductivity by adjusting microphase separation. The quasi-solid-state polymer electrolyte (QSPE), derived from PBC-mb-PBS with the molar block ratio of 0.42, exhibits optimal electrochemical performance with ionic conductivity of 6.20 × 10−5 S cm−1 at 30 °C and 4.22 × 10−4 S cm−1 at 60 °C. Due to its bicontinuous microphase structure, it also shows excellent mechanical strength and promotes uniform lithium deposition at high current densities. Li//LiFePO4 and Li//LiNi0.83Co0.05Mn0.12O2 cells demonstrate high capacity retention, confirming the potential of this polymer electrolyte in high-voltage applications. This design strategy offers insights for developing quasi-solid-state lithium metal batteries with superior overall performance.

On the coupled effect of a MIS-based anode and AlGaN-polarized super-junction to reduce the local electric field for AlGaN/GaN Schottky barrier diodes

This work employs advanced physical models with the help of technology computer-aided design tools to systematically design and investigate AlGaN/GaN Schottky barrier diodes (SBDs), focusing on enhancing forward conduction and reverse blocking characteristics. A recessed metal/insulator/III-nitride (MIS) anode is demonstrated to manage electric field distribution. The incorporation of a 1 nm thick Al2O3 layer enables a reduced leakage current and a significant increase in breakdown voltage (BV). Subsequently, tailored field plates (FPs) further improve the BV of the MIS SBD to ∼1650 V but strong electric field magnitude will be found at the edge of the FP. Hence, a MIS SBD with a graded AlGaN barrier layer (MIS-GA SBD) is designed, featuring a gradient decrease in Al content along the [0001] direction. The generation of negative polarization charges within the barrier functions as a super-junction, significantly homogenizing the electric field. As a result, the MIS-GA SBD achieves a remarkable BV exceeding 3500 V, highlighting its strong potential for high-voltage power electronic applications.

Detection of nanopores with the scanning ion conductance microscopy: A simulation study

During the dielectric breakdown process of thin solid-state nanopores, the application of high voltages may cause the formation of multi-nanopores on one chip, which number and sizes are important for their applications. Here, simulations were conducted to mimic the investigation of in situ nanopore detection with scanning ion conductance microscopy (SICM). Results show that SICM can provide accurate nanopore location and relative pore size. Detection resolution is influenced by the dimensions of the applied probe and separation between the probe and membranes, which can be enhanced under large voltages or a concentration gradient.

Durable high voltage solid-state sodium batteries with Pseudocapacitive P2 layered oxide cathode

Solid-state sodium batteries (SSBs) have attracted great interests due to their high energy density, good safety and low cost, but their performance including operation voltage, cycling stability and rate capability are far from satisfactory. In this study, a P2-Na0.68Li0.10Ni0.25Mn0.63Ca0.01Ti0.01O2 (NM-L10CT) layered cathode material were successfully fabricated, which possesses a high pseudocapacitance over 92 %, low volume strain of 0.8 %, high Na-ion diffusion coefficient and very good reversibility of anionic redox reaction. Moreover, room temperature solid-state sodium batteries with NM-L10CT and Na3Zr2Si2PO12 (NZSP) solid electrolyte are demonstrated, displaying much improved structural stability and cycling performance compared with that in liquid electrolyte batteries. The NM-L10CT/NZSP/Na SSBs exhibit very excellent electrochemical performance under high cut-off voltage, with high retention rates of 81.2 % after 500 cycles (2.0–4.2 V) and 74.2 % after 300 cycles (2.0–4.3 V), respectively. It has an outstanding rate performance with a high capacity of 115.4 mAh g-1 at 1 C and 74.5 mAh g-1 even at 10 C rate. This is due to the significantly reduced interface resistance and improved structural stability in solid state. This work demonstrates the successful application of high voltage layered cathode in SSBs and provides the insightful understanding of such material in liquid electrolyte and solid state battery.

Research on Gate Charge Degradation of Multi-Chip IGBT Modules in Power Supply for Unmanned Aerial Vehicles

In recent years, with the burgeoning application of high voltage in various industrial sectors, the deployment of unmanned equipment, such as industrial heavy-load Unmanned Aerial Vehicles (UAVs), incorporating high-capacity Insulated-Gate Bipolar Transistors (IGBTs), has become increasingly prevalent. The demand for high-voltage IGBT modules in UAV is continuously growing; therefore, exploring methods to predict fault precursor parameters of multi-chip IGBT modules is crucial for the operational health management of unmanned equipment like UAVs. This paper analyzes the gate charge degradation in multi-chip IGBT modules after thermal cycling, which can be used to evaluate the operational state of these modules. Furthermore, to delve into the electrical response of a gate drive circuit caused by local damage within the IGBT module, an RLC model incorporating parasitic parameters of the gate drive circuit is established, and a sensitivity analysis of the peak current in the gate charge circuit is provided. Additionally, in the experimental circuit, an open sample of an IGBT module with partial bond wires lifted off is used to simulate actual faults. The analysis and experimental results indicate that the peak current of the gate charge is closely related to L and C. The significant deviation in the gate current, influenced by the partial bond wires lift-off, can provide a basis for the development of predictive methods for IGBT modules.

A new approach based on 2D wavelet transform in the analysis of wettability behavior and evaporation rate for the surface of PTFE dielectric material used in high voltage applications

In this study, a new approach based on 2D wavelet transform is proposed for the analysis of wettability behavior and evaporation rate. Droplet images were taken from the PTFE dielectric sample surface at 30th, 270th, 510th, 750th, 990th, 1230th, 1470th, and 1710th seconds. The droplet images were decomposed into sub-bands using functions from six different wavelet families. The energy, entropy, mean, standard deviation, skewness, and kurtosis measures were calculated using wavelet coefficients for each sub-band image. Linear, exponential, and polynomial fitting methods were used to estimate the contact angle of the droplet images. The energy and standard deviation values, which are the selected optimal measures, were used as input in the fitting methods, and the regression coefficient (R2) and Root Mean Square Error (RMSE) values of the fitting methods were calculated. Thus, a high-performing contact angle prediction model with 2nd level sub-band image wavelet coefficients has been obtained.

An Improved Series 36-Pulse Rectifier Based on Dual Passive Pulse-Doubling Circuit on the System DC Side

The series-type 12-pulse rectifier generates a large amount of harmonics in the AC side current due to the strong nonlinearity of its rectifying diodes, causing serious harmonic pollution to the power grid. This article proposes a series 36-pulse rectifier based on a DC side dual passive frequency-doubling circuit to suppress the AC side current harmonics of a 12-pulse rectifier. The rectifier uses two symmetrical passive pulse multiplication circuits to regulate the circulation in the DC side circuit, increasing the output voltage and current state of the rectifier bridge, thereby increasing the number of pulses in the rectifier from 12 times to 36 times. Firstly, the working principle of the rectifier and the working mode of the dual passive frequency-doubling circuit were analyzed. Secondly, the harmonic suppression mechanism of the rectifier input current was revealed, and the frequency-doubling characteristics of the load voltage were analyzed. Finally, the correctness of the theoretical analysis was verified through a semi-physical platform. The verification and comparison results show that under the optimal conditions of the injecting transformer turns ratio, the DPPC can not only reduce the THD value of the input current by about 1/3 (from 14.87% to 4.78%) but can also increase the fluctuation frequency of the load voltage by 3 times (from 12 to 36), while improving the power quality of the AC/DC side rectifier and achieving the low harmonic operation of the rectifier. The proposed 36-pulse rectifier can effectively suppress harmonics; it has the advantages of simple structure, strong robustness, and high output voltage gain, and it is suitable for medium-voltage and high-voltage high-power rectification applications.

Fully Integrated Miniaturized Wireless Power Transfer Rectenna for Medical Applications Tested inside Biological Tissues

This work presents the results of the characterization of two 1 × 5 mm2 miniaturized rectennas developed for medical applications. They have been designed for relatively high voltage and high-power applications, given the size of the rectennas. Both rectennas were tested in open-air conditions and surrounded by pork fat and muscle tissues, whose properties are similar to those of the human body. The resonant frequencies of the rectennas were found, and the incident electric field on the rectennas tests was increased. The first chip showed a maximum output voltage of 5.29 V and a maximum output power of 0.056 mW, at 1.446 GHz, under an incident field on the rectenna of 340 V/m, and the second chip, 4.62 V and 4.27 mW, at 1.175 GHz, under 535 V/m. The second rectenna can provide an output power greater than 5 mW. The rectennas presented in this article are beyond the state of the art, as they can deliver about three times more power and voltage than those of similar dimensions reported in the literature. Based on the test results, the efficiency of the rectennas was analyzed at different locations of the human body, considering different thicknesses of tissues with high and low water content. Finally, potential applications are described in which the rectennas could power implantable medical devices or microsurgery tools, for example, pulmonary artery pressure monitors.

(Invited) The Evolving SiC Market and Impact on CMP Supply Chain

Silicon carbide (SiC) is a wide bandgap semiconductor with physical and electrical properties that provide superior performance in high-voltage or high-power applications. Compared to the more established silicon devices, SiC provides better thermal conductivity, ~10x higher breakdown voltage, faster switching speeds and lower resistivity. Even with the performance advantages, the adoption rate of SiC is slowed by high cost and the inherent difficulty of processing this material. SiC is extremely hard (just below diamond on the hardness scale) and chemically inert which makes processing boules into wafers rather difficult. This presentation will contrast some of the basic differences between process methods developed for silicon and other semiconductor materials versus those required for SiC.Demand for high-quality single crystal SiC substrates continues to rise as the worldwide demand for electric vehicles, charging infrastructure, green energy production, and more efficient power devices in general requires more and more SiC devices. SiC wafer manufacturers are trying to ramp output as quickly as possible but technical difficulties of processing SiC are often a limiting factor. In spite of aggressive capital spending by many of the major players, the actual growth in substrate production has been constrained to around 15% CAGR even though demand would support a much faster ramp. As end use markets continue to evolve, ripple effects are also evident in the underlying supply chains, such as CMP pads and slurries.

SiC CMP Process Sensitivities

Single-crystal silicon carbide (SiC) is a wide bandgap semiconductor with physical and electrical properties that provide superior performance compared to silicon or almost any other semiconductor material in high-voltage and high-power applications. It is also extremely hard, second only to diamond, and chemically almost inert which makes the CMP process step quite challenging. In recent years, a great deal of effort has been expended on advancing this process, particularly with regard to slurry formulations that can provide reasonable removal rates and damage-free final surface finishes. In this presentation, we will review a number of these developments for SiC CMP slurries. We will present data highlighting their process responses to standard CMP parameters, interactions with pad conditioning, and describe some of the requirements for production process controls.

Influence of Montmorillonite Organoclay Fillers on Hygrothermal Response of Pultruded E-Glass/Vinylester Composites.

Pultruded fiber reinforced polymer composites used in civil, power, and offshore/marine applications use fillers as resin extenders and for process efficiency. Although the primary use of fillers is in the form of an extender and processing aid, the appropriate selection of filler can result in enhancing mechanical performance characteristics, durability, and multifunctionality. This is of special interest in structural and high voltage applications where the previous use of specific fillers has been at levels that are too low to provide these enhancements. This study investigates the use of montmorillonite organoclay fillers of three different particle sizes as substitutes for conventional CaCO3 fillers with the intent of enhancing mechanical performance and hygrothermal durability. The study investigates moisture uptake and kinetics and reveals that uptake is well described by a two-stage process that incorporates both a diffusion dominated initial phase and a second slower phase representing relaxation and deterioration. The incorporation of the organoclay particles substantially decreases uptake levels in comparison to the use of CaCO3 fillers while also enhancing stage I, diffusion, dominated stability, with the use of the 1.5 mm organoclay fillers showing as much as a 41.5% reduction in peak uptake as compared to the CaCO3 fillers at the same 20% loading level (by weight of resin). The mechanical performance was characterized using tension, flexure, and short beam shear tests. The organoclay fillers showed a significant improvement in each, albeit with differences due to particle size. Overall, the best performance after exposure to four different temperatures of immersion in deionized water was shown by the 4.8 mm organoclay filler-based E-glass/vinylester composite system, which was the only one to have less than a 50% deterioration over all characteristics after immersion for a year in deionized water at the highest temperature investigated (70 °C). The fillers not only enhance resistance to uptake but also increase tortuosity in the path, thereby decreasing the overall effect of uptake. The observations demonstrate that the use of the exfoliated organoclay particles with intercalation, which have been previously used in very low amounts, and which are known to be beneficial in relation to enhanced thermal stability, flame retardancy, and decreased flammability, provide enhanced mechanical characteristics, decreased moisture uptake, and increased hygrothermal durability when used at particle loading levels comparable to those of conventional fillers, suggesting that these novel systems could be considered for critical structural applications.

Study of geometry effect on the performance of thin-film transistors fabricated with ZnGa2O4 epilayer grown by metalorganic chemical vapor deposition for high voltage applications

Enhancement mode thin film transistors (TFTs) having different geometries were fabricated on the Zinc gallium oxide (ZnGa2O4) epilayer grown on a c-plane sapphire substrate by metalorganic chemical vapor deposition (MOCVD). A field emission scanning electron microscope, atomic force microscopy, and X-ray diffraction were employed to conduct a detailed analysis of the film composition, morphology, and crystal structure. The distance between the source-to-gate and gate length was kept to be 7 μm and 3 μm in all the devices with varying gate-to-drain lengths of 10, 20, and 30 μm. Moreover, neutral beam etching technology was employed to isolate the individual devices and reduce the defects induced by plasma etching. It was found that the threshold voltage changes from 6 V to 7.6 V with the increase in source to drain length from 20 μm to 40 μm. The On/Off ratio of the devices was found to be 105, with a maximum current around 1 μA/mm. Additionally, the device breakdown voltage increased from 240 V to about 656 V with the increase in the device length. The results demonstrate the fabrication of the high breakdown voltage ZnGa2O4-based TFT and establish the co-relation of the source to drain length with the device characteristics.