High Temperature Sensor Research Articles

Design and implementation of a kind of high precision temperature compensating system for silicon-on-sapphire pressure sensor

In order to reduce the temperature effects on the testing accuracy of the silicon-on-sapphire high-temperature large-range pressure sensor, a miniaturized portable silicon-on-sapphire pressure sensor temperature compensation system is designed and implemented after solving the following three issues: temperature compensation structure design, temperature compensation circuit fabrication, and temperature compensation algorithm implementation. The simulation results indicated that the temperature of the test circuit part of the package structure is close to 30 °C at an ambient temperature of 30 °C, with the sensor sensitive element at 250 °C working temperature and 28 MPa ultimate pressure. Regarding to the problem of large sensor drift in high-temperature environments, a temperature compensation algorithm combining least squares and Lagrange interpolation is designed based on the input and output characteristics of the sensor. The algorithm improves the computational efficiency while also increasing the hysteresis error and nonlinear deviation of the sensor to 0.028%. The test results of the NIM (National Institute of Metrology, China) show that the measurement accuracy of the sensor is higher than 1‰ FS within −20 °C to 140 °C and higher than 3‰ FS within 140 °C to 250 °C.

Soft and Stretchable Humidity‐Insensitive Thermoresistive Temperature Sensor with A Tensile Strain Modulated Sensitivity

AbstractSoft and stretchable electronics represents a high potential paradigm shift in field of electronics, for example, in applications related to solar cells, organic displays, electronic skin, and wearable sensors. In this work, a soft and stretchable humidity‐insensitive thermoresistive sensor is developed using interdigitated electrodes made of silver‐plated nylon fabric coated with silver‐ink and a layer of poly(3,4‐ethylenedioxythiophene)–poly(styrene sulfonate) (PEDOT: PSS) embedded into elastomer. The mechanical and thermoelectrical properties of the soft sensor are characterized and analyzed. The fabricated soft sensor provides a combination of linear temperature sensitivity of 0.46% °C−1 with an R2 of 0.986 from 30 to 55 °C at 0% uniaxial tensile strain. It also exhibits excellent stability in environmental humidity ranging from ≈30% RH to ≈80% RH. The linear sensitivity is improved to 1.49% °C−1 by applying a 40% pre‐measurement stretch to the sensor. Due to its good temperature sensitivity (0.46 to 1.49% °C−1), excellent linearity (0.986), and high stretchability (≈125%), the soft and stretchable temperature sensor proves to be a very promising solution for wearable temperature sensing.

An alumina ceramic inspired high temperature wireless chipless sensor for harsh environment

This paper proposes a wireless passive temperature sensor. The sensitive material as the substrate of the sensor employs an alumina ceramic. The resonator of the sensor is a split ring, which is printed with copper on the substrate. The dimensions of the split ring resonator are optimized to improve the temperature sensitivity of the sensor. A change in environment temperature will lead to a change in the dielectric constant of the sensitive material, thus resulting in the shift of the resonant frequency of the sensor. The variation range of the dielectric constant of the sensitive material is 10.17–11.2 corresponding to 500–1000 °C. The resonant frequency of the signal backscattered from the sensor is obtained through the simulation software with HFSS. The simulation results show that the resonant frequency of the sensor decreases from 5.84 to 5.56 GHz with temperature increasing from 500 to 1000 °C and the temperature sensitivity is 0.56 MHz/°C. The high temperature sensor has the characteristics of wireless and passive operation, low profile, and high sensitivity. It can be widely adapted to a variety of high temperature and harsh environments.

A miniaturized and high Q-factor wireless passive frequency selective surface temperature sensor based on stacking coupling structure

A miniaturized and high Q-factor wireless passive frequency selective surface temperature sensor based on stacking coupling structure

Preparation and Performance Evaluation of a Miniature High-Temperature Heat Flux Sensor With Centralized Thermal Insulation Structure

Preparation and Performance Evaluation of a Miniature High-Temperature Heat Flux Sensor With Centralized Thermal Insulation Structure

High-Temperature Wireless Sensor Platform Powered by Energy Scavenging

High-Temperature Wireless Sensor Platform Powered by Energy Scavenging

Ca3Co4O9-based transverse thermoelectric heat flux sensors with high sensitivity and fast response time

High-temperature thin film heat flux sensors have been fabricated by growing c-axis tilted epitaxial Ca3Co4O9 (CCO) thin films on 5° vicinal cut LaAlO3 (001) single crystal substrates. The layered structure of Ca3Co4O9 yields the significant Seebeck coefficient anisotropy between the ab-plane and c-axis, which could generate a voltage of the heat flux sensor via the transverse thermoelectric (TTE) effect of thin films. A sensitivity of 27.7 μV/(kW/m2) has been determined in such 5° tilted Ca3Co4O9 thin films, which is much larger than other reported ones based on the TTE effect from various materials. After a thermal treatment at 900 °C in air for 10 min, the sensitivity of such heat flux sensors is almost non-variable, which indicates that the temperature resistance of the CCO-based TTE heat flux sensor is as high as 900 °C. In addition, a fast response time of 45 μs has been identified in such CCO-based TTE heat flux sensors. These results demonstrate that the CCO is a promising candidate to manufacture the TTE heat flux sensors with the superiorly comprehensive performance, including the high temperature resistance, high sensitivity, and fast response.

FPI-FBG Cascaded High-temperature Pressure Sensor up to 700°C Based on Vernier Effect Utilizing Femtosecond Laser

FPI-FBG Cascaded High-temperature Pressure Sensor up to 700°C Based on Vernier Effect Utilizing Femtosecond Laser

A flexible piezoelectric/pyroelectric dual-function sensor with high temperature resistance

Most of existing piezoelectric polymers have low glass transition temperatures, so they can only operate at lower temperatures (<150 ℃). Once the operating temperature is exceeded, the piezoelectric performance of the device rapidly decreases. At higher temperatures, dense chain motion can interfere with the orientation of dipoles, thus limiting the development of polymer based high-temperature piezoelectric sensors. High-temperature piezoelectric sensor devices are entirely made of inorganic materials, however, inorganic materials are rigid and can only work under small strains. Therefore, enhancing the temperature resistance of piezoelectric polmers and constructing piezoelectric asymmetric structure are the key to fabricating flexible high-temperature resistant piezoelectric/pyroelectric dual functional sensors. In this study, polyacrylonitrile (PAN) nanofiber film is prepared by electrospinning, and then subjected to heat treatment through programmed temperature control. The effects of the different heat-treatment temperatures on the mechanical and electrical performance of PAN nanofiber film are studied systematically, and the results show that PAN high temperature resistant flexible nanofiber film sensors can be used in high temperature environments (> 500 ℃). Its output performance is improved with the increase of heat treatment temperature (< 260 ℃) and then basically remains unchanged in a temperature range of 260–450 ℃. Finally, the output performance decreases at temperatures higher than 450 ℃. When the heat treatment temperature reaches 260 ℃, the output voltage increases to 10.08 V, and current reaches 2.89 μA. Compared with those of the untreated PAN membranes , its output voltage and current are increase by 3.54 times and 2.83 times, respectively. At the same time, the output of the PAN high temperature resistant flexible nanofiber film sensors is almost unchanged in the high-temperature environments. This is the first time that the pyroelectric effect has been observed in heat-treated PAN nanofiber films and both the open-circuit voltage and short-circuit current have been shown to increase with temperature gradient increasing. Besides, the PAN nanofiber film sensors have durability of more than 5000 cycles at room temperature(25 ℃) even at high temperature (400 ℃). Overall, good flexible, high-temperature resistance, and bifunctional sensing ability make PAN flexible nanofiber film sensors expected to be widely used in high temperature environments such as fire safety, aerospace and other harsh environment.

Optical fiber high-temperature pressure sensor with weak temperature sensitivity

In aerospace, petrochemical, gas turbines and other high-temperature environments, pressure measurement of equipment has always been a challenge to be solved. The electrical high temperature pressure sensor has the problem of component failure in high temperature environment, and it is difficult to use in the high temperature environment for a long time. The detection device of the optical fiber sensor does not include electrical components, so it has the advantages of high working temperature, high measurement accuracy, anti-electromagnetic interference and so on. In order to use a sensor to measure pressure in high temperature environment, a temperature-weakly sensitive optical fiber micro-electro-mechanical system (MEMS) pressure sensing technology is proposed. The technique uses extrisic Fabry-Pérot interference (EFPI) model. It uses the MEMS pressure chip to passively modulate the optical signal of the interference, and then realizes the pressure signal measurement. Among them, MEMS pressure sensitive chip is the core component of the sensor. The MEMS pressure sensitive chip adopts the design method of all solid state vacuum absolute pressure. Change in environmental pressure will deform the membrane. This phenomenon can cause change in the cavity of the EFPI cavity. Therefore, stress information can be obtained by measuring changes in EFPI cavity. The thermal stress and temperature parasitical response introduced by thermal expansion of the material are calculated by simulation. The influence of temperature signal on chip displacement is analyzed by the above results. On this basis, a prototype of high temperature pressure sensor is developed by combining the sub-micron white light interference response technology and low thermal stress packaging technology. In order to test the ability of the sensor to implement actual measurement, this paper carry out the pressure test and high temperature test respectively. When the pressure changes from 0 kPa to 100 kPa, the spectral intensity of the sensor output has a linear relationship with the pressure. During the temperature changing from 20–400 ℃, the spectral intensity of the sensor output does not change significantly. The experimental test results show that the pressure measurement of 0–100 kPa can be satisfied in the range of 20–400 ℃, and the measurement error introduced by temperature change is less than 4%. Therefore, the fiber pressure sensor can be used to measure the pressure in high temperature environment.

Evolution of conductive phase in SiCN ceramics for high piezoresistivity performance at high temperatures

Precursor-derived SiCN ceramics have been demonstrated to exhibit outstanding piezoresistivity in their amorphous state, making them suitable for application as high-temperature pressure sensors. This study reveals that partially crystallized SiCN ceramics exhibit an even higher piezoresistive coefficient of almost 11,000. From a microscopic perspective, it was previously believed that the excellent piezoresistive performance of precursor-derived ceramics (PDCs) originated from the pressure sensitivity of free carbon in the structure. However, this study has revealed that in partially-crystallized SiCN PDCs, several phases including free carbon, SiC, and Si can also exhibit conductivity. The critical factor that contributes to high piezoresistivity is the proximity between the concentration of conductive phases and the percolation threshold, leading to exceptional pressure sensitivity of SiCN ceramics.

Four-Stage Multi-Physics Simulations to Assist Temperature Sensor Design for Industrial-Scale Coal-Fired Boiler.

The growth of renewable energy sources presents a pressing challenge to the operation and maintenance of existing fossil fuel power plants, given that fossil fuel remains the predominant fuel source, responsible for over 60% of electricity generation in the United States. One of the main concerns within these fossil fuel power plants is the unpredictable failure of boiler tubes, resulting in emergency maintenance with significant economic and societal consequences. A reliable high-temperature sensor is necessary for in situ monitoring of boiler tubes and the safety of fossil fuel power plants. In this study, a comprehensive four-stage multi-physics computational framework is developed to assist the design, optimization installation, and operation of the high-temperature stainless-steel and quartz coaxial cable sensor (SSQ-CCS) for coal-fired boiler applications. With the consideration of various operation conditions, we predict the distributions of flue gas temperatures within coal-fired boilers, the temperature correlation between the boiler tube and SSQ-CCS, and the safety of SSQ-CCS. With the simulation-guided sensor installation plan, the newly designed SSQ-CCSs have been employed for field testing for more than 430 days. The computational framework developed in this work can guide the future operation of coal-fired plants and other power plants for the safety prediction of boiler operations.

Rapid laser fabrication of indium tin oxide and polymer-derived ceramic composite thin films for high-temperature sensors

Thin-film sensors are essential for real-time monitoring of components in high-temperature environments. Traditional fabrication methods often involve complicated fabrication steps or require prolonged high-temperature annealing, limiting their practical applicability. Here, we present an approach using direct ink writing and laser scanning (DIW-LS) to fabricate high-temperature functional thin films. An indium tin oxide (ITO)/preceramic polymer (PP) ink suitable for DIW was developed. Under LS, the ITO/PP thin film shrank in volume. Meanwhile, the rapid pyrolysis of PP into amorphous precursor-derived ceramic (PDC) facilitated the faster sintering of ITO nanoparticles and improved the densification of the thin film. This process realized the formation of a conductive network of interconnected ITO nanoparticles. The results show that the ITO/PDC thin film exhibits excellent stability, with a drift rate of 4.7 % at 1000 °C for 25 h, and withstands temperatures up to 1250 °C in the ambient atmosphere. It is also sensitive to strain, with a maximum gauge factor of −6.0. As a proof of concept, we have used DIW-LS technology to fabricate a thin-film heat flux sensor on the surface of the turbine blade, capable of measuring heat flux densities over 1 MW/m2. This DIW-LS process provides a viable approach for the integrated, rapid, and flexible fabrication of thin film sensors for harsh environments.

Design of Graphene Coated on FBG for High Temperature Sensor

This article reported design of FBG Sensor layered by 2D Graphene Material. In this research, the FBG was coated with single layer graphene material, then the outher FBG has been coated with Aluminium, Chromium Oxide, PMMA, and Silica. The finite element method was used to analyze the profile of each coated-FBG with a thickness of 20 µm. Furthermore, the sensitivity of each designed coated-FBGs for the temperature measurement was calculated in the range of 25 oC – 300 oC. Design and analysis of coated FBG found that the FBG coated with graphene then layered by PMMA material has the highest sensitivity of 406.4 pm/℃. Although the sensitivity was 395.73pm/℃ for PMMA material. It was followed by Aluminium coating material which yields the sensitivity of 71.367pm/℃. The Silica and Chromium oxide yield the same sensitivity of 13.73pm/℃. Furthermore, the simulation results shows that the design of coated FBGs with a Gaussian apodization has the narrowest FWHM width of 1.3 nm. While the Tanh and Uniform apodization yield FWHM width of 3.724 nm and 3.732 nm respectively. Certainly, the best FBG design for high temperature sensor was proposed by FBGs coated by graphene and layered with PMMA material with Gaussian apodization

High performance low power CMOS temperature sensor

A temperature sensor based on the combination of a temperature variable oscillator and a linear controlled oscillator is proposed, which can realize temperature detection through the characteristic of frequency changing with temperature. The changing frequency is generated by the two oscillators, and by adjusting the frequency linear change, the linearity of the sensor is also increased. Through the frequency digitizer, the digital signal can be output. Compensation through a process compensator improves the accuracy of the sensor after a single point correction. After conducting tests on 15 experimental samples, the accuracy was achieved within ± 1.2∘C across the temperature range of 0 to 125∘C, demonstrating a highly favorable level of precision.

High sensitivity temperature and gas pressure sensor based on PDMS sealed tapered hollow-core fiber

We use hollow core fiber (HCF) and single mode fiber (SMF) fusion splicing to form a sensor with a “SMF-HCF-SMF” structure. To improve the sensitivity of the sensor, the HCF is tapered and stretched to a waist diameter of 10 μm. Then, in order to further improve the sensitivity of the sensor to temperature and pressure, as well as the mechanical strength of the sensor, we coated a layer of polydimethylsiloxane (PDMS) thin film on the surface of the tapered HCF. When light propagates in the sensor, an anti-resonant reflection optical waveguide (ARROW) mechanism is formed. Due to the excellent thermal sensitivity and elasticity of PDMS, the transmission spectrum of the sensor will significantly drift due to changes in environmental temperature and gas pressure, achieving temperature and pressure measurement. The experimental results show that the maximum temperature and gas pressure sensitivity of the sensor reach −3.2321 nm/℃ and −22.80 nm/MPa, respectively. In addition, the sensor also has good repeatability and stability, as well as short response time. It has certain application prospects in the field of high sensitivity temperature and gas pressure sensing measurement.

Directional and lattice engineering growth of sapphire fibers for ultrasonic ultra-high-temperature sensors

High-temperature sensors for extreme environments are in urgent demand with the rapid development of aerospace, nuclear energy, and advanced manufacturing. Ultrasonic temperature sensors (UTS) are widely used in high-temperature sensing due to their high working temperature that approaches the melting point of the acoustic waveguide. Al2O3 single-crystal fiber (SCF), also called sapphire fiber, is a promising candidate for ultrasonic thermometry due to its ultra-high melting point (∼2050 °C), high strength and oxidation resistance. Here, we report for the first time, to the best of our knowledge, large length-diameter ratio sapphire fibers with specific orientations (a-axis, m-axis, and c-axis) have been grown by laser-heated pedestal growth method and applied for ultrasonic temperature sensing. Sapphire fibers exhibit significant acoustic anisotropy, and a-oriented sapphire fiber has a lower acoustic velocity and a greater velocity-temperature variation, leading to higher sensitivity. Moreover, the acoustic velocity of sapphire fiber could be further decreased by doping with Cr ions owing to the enhanced lattice disorder and crystal density. As a result, an improved unit sensitivity of 28.98–52.88 ns°C−1m−1 and a superior resolution of 1.73–0.95 °C have been achieved in the range of 20–1200 °C via a-oriented Cr:Al2O3 SCF-UTS. More importantly, the sensor performance is positively correlated with ambient temperature, accompanied with the high working temperature (∼1800 °C) and excellent stability (∼20 h), demonstrating promising prospects for applications in high-temperature thermometry. This work provides a feasible approach for designing a high-performance UTS based on acoustic anisotropy and lattice engineering.

Design and Research of SIW Wireless Passive High-Temperature and Pressure Sensor

Design and Research of SIW Wireless Passive High-Temperature and Pressure Sensor

Materials and Sensing Mechanisms for High-Temperature Pressure Sensors: A Review

Materials and Sensing Mechanisms for High-Temperature Pressure Sensors: A Review

Pt/HTCC Alumina based Electronic Packaging System and Integration Processes for High Temperature Harsh Environment Applications

Electronic devices capable of operation at 500°C are required for long term Venus surface missions, as well as for in situ monitoring and control of next generation aeronautical engines. High temperature sensors and electronics can also find many applications in military, and energy and automobile industries. Various silicon carbide (SiC) sensors and electronic devices have been developed for operation at 500 °C, and a compatible packaging system is needed for long term test and deployment of these high temperature devices. High temperature co-fired ceramics (HTCC) alumina with platinum (Pt) conductor was proposed for high temperature electronic packaging. A prototype Pt/HTCC alumina packaging system including chip-level package and circuit board has been briefly reported previously for long-term electrical testing of SiC integrated circuits at 500 °C, and brief testing at much higher temperatures. HTCC alumina is an excellent dielectric material with acceptable dielectric constant and low dielectric loss over wide temperature and frequency ranges. Pt is chemically noble and can be co-fired with HTCC alumina in air ambient producing a viable electronic packaging material system for high temperature applications. This paper presents a more detailed description of this packaging system including prototype low power packages and circuit boards based on HTCC alumina and Pt metallization for 500°C and other harsh environment applications. The key technical considerations for chip-level packaging and circuit board assembly, including materials and processes for 500 °C durable wire-bonding and SiC die attach, and integration of multi-chip circuit boards, are presented. Experimental test results of this packaging approach applied to SiC integrated circuits at 500 °C and 700°C are discussed as well.