High-temperature Layer Research Articles

Investigation of non-uniform gelation effects on residual stresses of thick laminates based on tailed FBG sensor

Due to the appearance of temperature gradient and non-uniform gelation, fully understanding of residual stresses is even more complex in thick laminates. In this paper, basic mechanisms of cure process were presented firstly. Then, experimental investigation of the non-uniform gelation was carried out together with characterization of necessary material properties. Tailed FBG sets were applied to monitor the cure of thick laminates with temperature gradient. The non-uniform gelation and chemical shrinkage gradient were captured successfully. Lastly, FEM analysis integrating thermal-chemical sub-model and stress-displacement sub-model was carried out to reveal the development of residual stresses. It is demonstrated that the high temperature layer gelled earlier and showed more chemical shrinkage. The chemical strain gradient would introduce compression internal stresses in prior gelled layer and introduces tensile internal stresses in later gelled layer. For the case studied here, transverse residual stress generated by non-uniform chemical shrinkage is small. The strategy used here is promising to estimate the residual stresses for more complex cases further.

Curtailing Perovskite Processing Limitations via Lamination at the Perovskite/Perovskite Interface

Standard layer-by-layer solution processing methods constrain lead–halide perovskite device architectures. The layer below the perovskite must be robust to the strong organic solvents used to form the perovskite while the layer above has a limited thermal budget and must be processed in nonpolar solvents to prevent perovskite degradation. To circumvent these limitations, we developed a procedure where two transparent conductive oxide/transport material/perovskite half stacks are independently fabricated and then laminated together at the perovskite/perovskite interface. Using ultraviolet–visible absorption spectroscopy, external quantum efficiency, X-ray diffraction, and time-resolved photoluminesence spectroscopy, we show that this procedure improves photovoltaic properties of the perovskite layer. Applying this procedure, semitransparent devices employing two high-temperature oxide transport layers were fabricated, which realized an average efficiency of 9.6% (maximum: 10.6%) despite series resistance l...

Filtering properties of Thue–Morse nano-photonic crystals containing high-temperature superconductor

In this paper, we introduced new design of quasi-periodic layered structures by choosing order two of ternary Thue–Morse structure. We considered Superconductor-dielectric photonic crystal with mirror symmetric as (ABSSAB)N(BASSBA)N composed of two kinds of nano-scale dielectric layers (A and B) and high-temperature superconductor layers where N is the number of period. This structure is assumed to be the free space. By using the transfer matrix method and the two fluid model, we theoretically study the transmission spectrum of ternary Thue–Morse superconducting photonic crystals with mirror symmetry and introduce this structure as a narrow optical filter. We showed that transmission peak so-called defect mode appears itself inside the transmission spectrum of suggested structure as same as defective layered structure. Also, we analyzed the influence of various related parameters such as the operating temperature of superconductor layer on position of defect mode. The redshift of defect mode with increasing the operating temperature was observed.

High-temperature superconductivity at the lanthanum cuprate/lanthanum-strontium nickelate interface.

The utilization of interface effects in epitaxial systems at the nanoscale has emerged as a very powerful approach for engineering functional properties of oxides. Here we present a novel structure fabricated by a state-of-the-art oxide molecular beam epitaxy method and consisting of lanthanum cuprate and strontium (Sr)-doped lanthanum nickelate, in which interfacial high-temperature superconductivity (Tc up to 40 K) occurs at the contact between the two phases. In such a system, we are able to tune the superconducting properties simply by changing the structural parameters. By employing electron spectroscopy and microscopy combined with dedicated conductivity measurements, we show that decoupling occurs between the electronic charge carrier and the cation (Sr) concentration profiles at the interface and that a hole accumulation layer forms, which dictates the resulting superconducting properties. Such effects are rationalized in the light of a generalized space-charge theory for oxide systems that takes account of both ionic and electronic redistribution effects.

Producing deep UV-LEDs in high-yield MOVPE by improving AlN crystal quality with sputtered AlN nucleation layer * * Project supported by the National Natural Sciences Foundation of China (Nos. 61334009, 61474109, 61306050).

High-quality AlN layers with low-density threading dislocations are indispensable for high-efficiency deep ultraviolet light-emitting diodes (UV-LEDs). In this work, a high-temperature AlN epitaxial layer was grown on sputtered AlN layer (used as nucleation layer, SNL) by a high-yield industrial metalorganic vapor phase epitaxy (MOVPE). The full width half maximum (FWHM) of the rocking curve shows that the AlN epitaxial layer with SNL has good crystal quality. Furthermore, the relationships between the thickness of SNL and the FWHM values of (002) and (102) peaks were also studied. Finally, utilizing an SNL to enhance the quality of the epitaxial layer, deep UV-LEDs at 282 nm were successfully realized on sapphire substrate by the high-yield industrial MOVPE. The light-output power (LOP) of a deep UV-LED reaches 1.65 mW at 20 mA with external quantum efficiency of 1.87%. In addition, the saturation LOP of the deep UV-LED is 4.31 mW at an injection current of 60 mA. Hence, our studies supply a possible process to grow commercial deep UV-LEDs in high throughput industrial MOVPE, which can increase yield, at lower cost.

On the Growth of High-Temperature Epitaxial AlN (AlGaN) Layers on Sapphire Substrates by Ammonia Molecular Beam Epitaxy

The growth of high-temperature AlN and AlGaN layers on (0001) sapphire substrates by ammonia based molecular-beam epitaxy is studied. Factors affecting the formation of inverted domains in high-temperature AlN films are examined. The density of inverted domains is found to correlate with the density of nucleation islands during the initial stages of growth. The denser coverage of a surface by nucleation islands suppresses the formation of inverted domains. It is possible to increase the density of surface coating at the nucleation growth stage by increasing the degree of substrate nitriding, reducing the deposition temperature, and using intense ammonia fluxes during deposition of the initial layers. The kinetic model in the mean field approximation is developed to explain the observed effects of growth parameters on the density of nucleation islands. The growth features of AlN and its structure are taken into account. The obtained results are used to grow AlN/AlGaN layers with improved structural quality. The grown films have a root-mean-square surface roughness of 2 A and 120 arc s FWHM of X-ray diffraction peaks for the AlN 0002 reflection. The density of inverted domains is decreased to below 105 cm-2. Improvement in the quality of the AlN films is achieved by using two-step growth and by the application of gallium as a surfactant.

High-quality AlN film grown on a nanosized concave–convex surface sapphire substrate by metalorganic vapor phase epitaxy

We developed a method for fabricating high-crystal-quality AlN films by combining a randomly distributed nanosized concavo–convex sapphire substrate (NCC-SS) and a three-step growth method optimized for NCC-SS, i.e., a 3-nm-thick nucleation layer (870 °C), a 150-nm-thick high-temperature layer (1250 °C), and a 3.2-μm-thick medium-temperature layer (1110 °C). The NCC-SS is easily fabricated using a conventional metalorganic vapor phase epitaxy reactor equipped with a showerhead plate. The resultant AlN film has a crack-free and single-step surface with a root-mean-square roughness of 0.5 nm. The full-widths at half-maxima of the X-ray rocking curve were 50/250 arcsec for the (0002)/(10–12) planes, revealing that the NCC surface is critical for achieving such a high-quality film. Hexagonal-pyramid-shaped voids at the AlN/NCC-SS interface and confinement of dislocations within the 150-nm-thick high-temperature layer were confirmed. The NCC surface feature and resultant faceted voids play an important role in the growth of high-crystal-quality AlN films, likely via localized and/or disordered growth of AlN at the initial stage, contributing to the alignment of high-crystal-quality nuclei and dislocations.

Flare activity and photospheric analysis of Proxima Centauri

We present the analysis of emission lines in high-resolution optical spectra of the planet-host star Proxima Centauri (Proxima) classified as a M5.5V\@. We carry out the detailed analysis of observed spectra to get a better understanding of the physical conditions of the atmosphere of this star. We identify the emission lines in a serie series of 147 high-resolution optical spectra of the star at different levels of activity and compare them with the synthetic spectra computed over a wide spectral range. Our synthetic spectra computed with the PHOENIX 2900/5.0/0.0 model atmosphere fits pretty well the observed optical-to-near-infrared spectral energy distribution. However, modelling strong atomic lines in the blue spectrum (3900--4200\AA{}) requires implementing additional opacity. We show that high temperature layers in Proxima Centauri consist in at least three emitting parts: a) a stellar chromosphere where numerous emission lines form. We suggest that some emission cores of strong absorption lines of metals form there; b) flare regions above the chromosphere, where hydrogen Balmer lines up to high transition levels (10--2) form; c) a stellar wind component with V${r}$\,=\,$-$30 \kmps{} seen in some Balmer lines as blue shifted emission lines. We believe that the observed He line at 4026\AA{} in emission can be formed in that very hot region. We show, that real structure of the atmosphere of Proxima is rather complicated. The photosphere of the star is best fit by a normal M5 dwarf spectrum. On the other hand emission lines form in the chromosphere, flare regions and extended hot envelope.

High-temperature adsorption layers based on fluoridated polyimide and diatomite carrier

A way of preparing separation layers by the pyrolysis of fluorinated polyimide obtained from 2,4,6-trimethyl-m-phenylenediamine (2,4,6-TMmPDA) and 2,2-bis(3′,4′-dicarboxyphenyl)hexafluoropropane (6FDA) applied onto a diatomite carrier is described. Thermogravimetry, elemental analysis, low-temperature nitrogen adsorption, high-resolution electron microscopy, and gas chromatography are used to study changes in the texture and chromatographic characteristics of these layers. It is found that changes in the structure and the effectivity of separation characteristic of the layers depend on the temperature of pyrolysis, which ranges from 250 to 1100°C. It is established that a layer of separation is formed at 250–350°C, and the order of elution of hydrocarbons is similar to their chromatographic behavior on such stationary phases as OV-101. Layers of amorphous carbon formed on the surfaces of individual particles on a diatomite surface at 500–700°C. These layers ensure highly stable and selective separation of permanent gases and hydrocarbons when they are present together.

Thermal sprayed high-entropy NiCo0.6Fe0.2Cr1.5SiAlTi0.2 coating with improved mechanical properties and oxidation resistance

In this study, we developed an overlay coating of high-entropy alloy (HEA) NiCo0.6Fe0.2Cr1.5SiAlTi0.2 (C3) via atmospheric plasma spraying. The as-deposited coating is a supersaturated BCC phase except some oxide stringers formed during the spray. However, a plenty of Cr3Si phase forms in the coating and cause a large increase of hardness and wear resistance when aged at 800 and 1100 °C. The oxidation weight gain test demonstrates that the coating exhibits oxidation resistance as good as typical NiCrAlY coating at 1100 °C due to the formation of a dense thermally grown oxide layer (TGO) comprising Al2O3 and Cr2O3. This coating becomes a strong candidate for high-temperature protective layer requiring oxidation and wear resistance.

On the Role of AlN Insertion Layer in Stress Control of GaN on 150-mm Si (111) Substrate

In this study, low-temperature (LT) and high-temperature (HT) AlN insertion layers (ILs) grown at 680 and 970 °C were integrated with 3.7-μm GaN-based heterostructure grown on 150-mm Si (111) substrates by metalorganic chemical vapor deposition. Under a V/III flow ratio of 1960, the GaN epilayer with a continuous interface resulting from the LT AlN IL was subject to a compressive stress of −0.109 GPa. However, the GaN epilayer with discontinuous interfaces resulting from the HT AlN IL growth under the same flow ratio was subject to a tensile stress of 0.174 GPa. To realize continuous interfaces between the GaN epilayer and HT AlN IL, a higher V/III ratio of 5960 was utilized to suppress the decomposition of GaN. It results in changing the stress state of the GaN-based heterostructure from tensile to compressive. This strategic finding indicates that a stress-controllable GaN on Si can be achieved via the incorporation of HT AlN ILs. A minimum curvature at 5 km−1 is demonstrated for the 3.7-μm GaN-based heterostructure on a 150-mm Si (111) substrate, which has high potential for power switching device applications.

Growth mechanisms of GaN epitaxial films grown on ex situ low-temperature AlN templates on Si substrates by the combination methods of PLD and MOCVD

Three kinds of ex situ low-temperature AlN (LT-AlN) templates grown on Si substrates by pulsed laser deposition (PLD) are employed to grow GaN epitaxial films by metal organic chemical vapor deposition (MOCVD). The single-crystalline ex situ LT-AlN template with smooth surface shows the greatest advantage to achieve high-quality GaN epitaxial films. It can effectively promote the lateral growth of high-temperature AlN layer to obtain coalesced and smooth surface, and therefore reduce the GaN nucleation energy barrier to facilitate GaN nucleation process. The as-grown truncated GaN nuclei with large sizes and low density are favorable for the two-dimensional growth of GaN. The ∼1.5 μm-thick GaN epitaxial film grown on this ex situ LT-AlN template shows a flat surface and the best crystalline quality with the minimum full-width at half maximums (FWHMs) of GaN(0002) and GaN(10–12) X-ray rocking curves (XRCs) as 504 and 566 arcsec, respectively, and the minimum FWHM of near band emission peak as 20.62 nm. According to the XRC results, compared with the GaN film grown without ex situ LT-AlN templates, the screw-type threading dislocations (TDs) density, edge- and mixed-type TDs density in as-grown GaN film are greatly reduced by 20% and 49%, respectively, proving the superiority of ex situ LT-AlN template. This work is instructional for the growth of high-quality nitride films by combination methods, and significant for achieving high-performance GaN-based devices.

Chemical and Electrochemical Synthesis of Platinum Black

We present electrochemical and chemical synthesis of platinum black at room temperature in aqueous and non-aqueous media. X-ray analysis established the purity and crystalline nature. The electron micrographs indicate that the nanostructures consist of platinum crystals that interconnect to form porous assemblies. Additionally, the electron micrographs of the platinum black thin layer, which was electrochemically deposited on different metallic and semiconductive substrates (aluminium, platinum, silver, gold, tin-cooper alloy, indium-tin-oxide, stainless steel, and copper), indicate that the substrate influences its porous features but not its absorbance characteristics. The platinum black exhibited a broad absorbance and low reflectance in the ultraviolet, visible, and infrared regions. These characteristics make this material suitable for use as a high-temperature resistant absorber layer for the fabrication of microelectronics.

Formation of Composite Surface Layers TiNiTa + cBN-Co-NiAl-Y Considering their Properties

We developed formation technology of composition "steel - material with shape memory effect - high-temperature ceramic wear layer" by means of high-velocity oxygen-fuel spraying in the protective environment of mechanically activated powders TiNiTa and cBN-Co-NiAl-Y. We determined optimal processing parameters. We revealed regularities in the formation of nanosized state composition on the basis of the complex X-ray diffraction and electron microscopy studies. We carried out tests om steel 1045 with a surface-modified layer TiNiTa + cBN-Co-NiAl-Y in high-cycle fatigue, which confirmed the increase in endurance limit.

Influence of high-temperature AlN intermediate layer on the optical properties of MOCVD grown AlGaN films

By combining spectroscopic ellipsometry (SE) and optical transmission (OT) characterization methods we have systematically investigated the influence of AlN intermediate layer and AlN transition layer on the optical properties of AlGaN epilayers grown on sapphire by metalorganic chemical vapor deposition (MOCVD) method. Most dielectric functions of III-nitrides obtained by different research groups show significant band-tail absorption—which is not anticipated for such a direct band gap material. The dielectric functions are studied for a series of AlGaN/AlN/Al2O3 structures, with a four-layer model taking into account both high temperature grown AlN layer and low temperature grown AlN layer. The results obtained by fitting the optical parameters to experimental data show that the band-tail absorption should originate from the transition layer. AlGaN film without high temperature AlN epilayer exhibited a redshift of band gap around 0.24 eV.

Zinc tin oxide as high-temperature stable recombination layer for mesoscopic perovskite/silicon monolithic tandem solar cells

Perovskite/crystalline silicon tandem solar cells have the potential to reach efficiencies beyond those of silicon single-junction record devices. However, the high-temperature process of 500 °C needed for state-of-the-art mesoscopic perovskite cells has, so far, been limiting their implementation in monolithic tandem devices. Here, we demonstrate the applicability of zinc tin oxide as a recombination layer and show its electrical and optical stability at temperatures up to 500 °C. To prove the concept, we fabricate monolithic tandem cells with mesoscopic top cell with up to 16% efficiency. We then investigate the effect of zinc tin oxide layer thickness variation, showing a strong influence on the optical interference pattern within the tandem device. Finally, we discuss the perspective of mesoscopic perovskite cells for high-efficiency monolithic tandem solar cells.

Combustion of boron particles coated with an energetic polymer material

Elemental boron has attracted considerable attention as a potential high energetic material for explosives and propellants. However, its use has been hindered by its high vaporization temperature and surface oxide layer. In this study, boron particles were coated with glycidyl azide polymer (GAP) to improve their combustion characteristics. The coated particles were characterized by transmission electron microscopy, X-ray photoelectron spectroscopy (XPS) and Fourier-transform infrared spectroscopy. XPS performed before and after Ar+ ion sputtering confirmed that the azide (−N3) group of GAP was positioned at the proximity of the boron surface. In addition, B@GAP particles could be decorated with metallic Ag (∼10 nm) nanoparticles. The combustion characteristics were examined using a newly designed pre-heated (1,800 K) drop tube furnace and a high speed camera. Two stages of combustion were observed for a dust cloud of GAP-coated boron particles. The burning time was estimated to be approximately 37.5 msec.

Growth of thick and high crystalline quality InGaN layers on GaN (0001¯) substrate using tri-halide vapor phase epitaxy

The growth of thick InGaN layers on free-standing GaN (0001¯) substrates was studied using tri-halide vapor phase epitaxy. It was found that high-indium-content InGaN can be grown under higher InCl3 input partial pressure at higher growth temperature, which allows the fabrication of a high crystalline quality InGaN layer with a smooth surface morphology. Using the growth conditions of high InCl3 input partial pressure and high growth temperature, crack- and droplet-free InGaN layers with a thickness of over 10µm and with an indium fraction of 0.05 were successfully grown. Although the surface showed many hillocks, the number of hillocks was reduced upon growth of thicker InGaN layers. Photoluminescence measurements confirm that thick InGaN layers could be successfully grown without degradation of the crystalline quality.

Investigation on HT-AlN Nucleation Layers and AlGaN Epifilms Inserting LT-AlN Nucleation Layer on C-Plane Sapphire Substrate

In this study, we have investigated a high-temperature AlN nucleation layer and AlGaN epilayers on c-plane sapphire substrate by low-pressure metal-organic chemical vapor deposition (LP-MOCVD). High resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), scanning electron microscope (SEM) and Raman scattering measurements have been exploited to study the crystal quality, surface morphology, and residual strain of the HT-AlN nucleation layer. These analyses reveal that the insertion of an LT-AlN nucleation layer can improve the crystal quality, smooth the surface morphology of the HT-AlN nucleation layer and further reduce the threading dislocation density of AlGaN epifilms. The mechanism of inserting an LT-AlN nucleation layer to enhance the optical properties of HT-AlN nucleation layer and AlGaN epifilm are discussed from the viewpoint of driving force of reaction in this paper.

Specific features of modeling of nonequilibrium radiation behind the shock wave in air in the vacuum ultraviolet spectral range

A physical-chemical model of generation of nonequilibrium molecular radiation in the vacuum ultraviolet (VUV) spectral range behind the shock wave in air for shock wave velocities from 4.5 to 9.5 km/s is developed. Experimental results obtained in a shock tube in investigations of photoionization of air ahead of the shock wave front are used for verification of the numerical model of VUV radiation in the wavelength range from 85 to 105 nm. Model calculations show that nonequilibrium VUV radiation arises in a very thin high-temperature layer behind the shock wave front and is affected by heavy particles and electrons.