In this work, we report an InAs-based interband cascade laser that emits at λ = 4.58 μm in continuous-wave mode up to a maximum temperature of 64 °C, an increase of 29 °C beyond the previously highest reported value for InAs-based interband cascade lasers. At T = 20 °C, an output power of 20 mW was achieved for a 10-μm × 2-mm ridge waveguide device with one facet coated for high reflection and epilayer-down mounting.