High-speed Spintronic Devices Research Articles

Controlling the 2D Magnetism of CrBr3 by van der Waals Stacking Engineering.

The manipulation of two-dimensional (2D) magnetic order is of significant importance to facilitate future 2D magnets for low-power and high-speed spintronic devices. van der Waals stacking engineering makes promises for controllable magnetism via interlayer magnetic coupling. However, directly examining the stacking order changes accompanying magnetic order transitions at the atomic scale and preparing device-ready 2D magnets with controllable magnetic orders remain elusive. Here, we demonstrate the effective control of interlayer stacking in exfoliated CrBr3 via thermally assisted strain engineering. The stable interlayer ferromagnetic (FM), antiferromagnetic (AFM), and FM-AFM coexistent ground states confirmed by the magnetic circular dichroism measurements are realized. Combined with the first-principles calculations, the atomically resolved imaging technique reveals the correlation between magnetic order and interlayer stacking order in CrBr3 flakes unambiguously. A tunable exchange bias effect is obtained in the mixed phase of FM and AFM states. This work will introduce new magnetic properties by controlling the stacking order and sequence of 2D magnets, providing ample opportunities for their application in spintronic devices.

Magnetic field modulated ultrafast spin dynamics at Ni80Fe20/Neodymium interface.

Ultrafast spin dynamics is crucial for the next-generation spintronic devices towards high-speed data processing. Here, we investigate the ultrafast spin dynamics of Neodymium/Ni80Fe20 (Nd/Py) bilayers by the time-resolved magneto-optical Kerr effect. The effective modulation of spin dynamics at Nd/Py interfaces is realized by an external magnetic field. The effective magnetic damping of Py increases with increasing Nd thickness, and a large spin mixing conductance (∼19.35×1015 cm-2) at Nd/Py interface is obtained, representing the robust spin pumping effect by Nd/Py interface. The tuning effects are suppressed at a high magnetic field due to the reduced antiparallel magnetic moments at Nd/Py interface. Our results contribute to understanding ultrafast spin dynamics and spin transport behavior in high-speed spintronic devices.

Transition in electronic and magnetic properties of transition metal embedded semimetallic B-graphyne.

Spintronics is extremely important in the future development of information technology. Notably, two-dimensional carbon materials with atomically thick and p-electron systems have great potential for application in ultrathin spintronic devices. B-graphyne (B-GY) is a recently proposed two-dimensional carbon allotrope with double Dirac cones. It is a promising nanomaterial for high-speed spintronic devices due to its ultra-high Fermi velocity and thermodynamic stability. We tune the electronic and magnetic properties of B-GY by doping 3d transition metals (TM) (Cr, Mn, Fe, Co, Ni) based on first-principles calculations. After doping, TM forms strong covalent bonds (Fe, Co, Ni) and ionic bonds (Cr, Mn) with adjacent C atoms. The system of TM-doped B-GY (TM@B-GY) is transformed from a semimetal for B-GY to a metal (Cr, Mn, Fe, Co), but Ni@B-GY is still semimetal. Among them, Co@B-GY is approximately a half-metal. Moreover, TM (except Ni) can induce the magnetism of B-GY to undergo spin splitting. The TM d-orbitals are strongly coupled to the C p-orbitals, which play an important role in inducing magnetism. The results show that the tunable electronic and magnetic properties of TM@B-GY are promising as a high-speed spintronic device. Our research helps advance the study of semimetallic carbon allotropes in the field of spintronics.

Strain-dependent magnetic ordering switching in 2D AFM ternary V-based chalcogenide monolayers.

The lack of macroscopic magnetic moments makes antiferromagnetic materials promising candidates for high-speed spintronic devices. The 2D ternary V-based chalcogenides (VXYSe4; X, Y = Al, Ga) monolayers are investigated based on the density-functional theory and Monte Carlo simulations. The results reveal that the Néel temperature of the VGa2Se4 monolayer is 18 K with zigzag2-antiferromagnetic (AFM) spin ordering. Also, the magnetic ordering of V ions in VAl2Se4 and VAlGaSe4 monolayers prefer zigzag1-AFM coupling with Néel temperature of 47 K and 33 K, respectively. The magnetic anisotropy calculations demonstrate that the easy magnetization axis of the VXYSe4 monolayers is parallel to the y axis. In addition, the VXYSe4 monolayers can be adjusted from the AFM state to the ferromagnetic (FM) state under biaxial stretching, which can be attributed to the competition between d-p-d superexchange and d-d direct exchange caused by the variation of bond length. The transition temperature of VXYSe4 monolayers can be elevated above room temperature with the help of compression strain. In particular, the in-plane magnetic anisotropy is a robust characteristic regardless of the magnitude of the applied biaxial strain. These explorations not only enrich the family of AFM monolayers with excellent stability but also provide distinctive ideas for the performance control of AFM materials and their applications in nanodevices.

Magnetization Precession at Sub-Terahertz Frequencies in Polycrystalline Cu2 Sb-Type (Mn-Cr)AlGe Ultrathin Films.

A ferromagnetic metal nanolayer with a large perpendicular magnetic anisotropy, small saturation magnetization, and small magnetic damping constant is a crucial requirement for high-speed spintronic devices. Fabrication of these devices on Si/SiO2 amorphous substrates with polycrystalline structure is also strongly desired for the mass production industry. This study involves the investigation of sub-terahertz (THz) magnetization precessional motion in a newly developed material system consisting of Cu2 Sb-type MnAlGe and (Mn-Cr)AlGe films by means of an all-optical pump-probe method. These materials exhibit large perpendicular magnetic anisotropy in regions of a few nanometers in size. The pseudo-2D crystal structures are clearly observed in the high-resolution transmission electron microscopy (TEM) images for the film samples grown on thermally oxidized silicon substrates. The TEM images also show a partial substitution of Cr atoms for the Mn sites in MnAlGe. A magnetization precession frequency of 0.164 THz with a relatively small effective magnetic damping constant of 0.012 is obtained for (Mn-Cr)AlGe. Theoretical calculation infers that the modification of the total density of states by Cr substitution decreases the intrinsic magnetic damping constant of (Mn-Cr)AlGe.

Generation and Control of Terahertz Spin Currents in Topology-Induced 2D Ferromagnetic Fe3 GeTe2 |Bi2 Te3 Heterostructures.

Future information technologies for low-dissipation quantum computation, high-speed storage, and on-chip communication applications require the development of atomically thin, ultracompact, and ultrafast spintronic devices in which information is encoded, stored, and processed using electron spin. Exploring low-dimensional magnetic materials, designing novel heterostructures, and generating and controlling ultrafast electron spin in 2D magnetism at room temperature, preferably in the unprecedented terahertz (THz) regime, is in high demand. Using THz emission spectroscopy driven by femtosecond laser pulses, optical THz spin-current bursts at room temperature in the 2D van der Waals ferromagnetic Fe3 GeTe2 (FGT) integrated with Bi2 Te3 as a topological insulator are successfully realized. The symmetry of the THz radiation is effectively controlled by the optical pumping incidence and external magnetic field directions, indicating that the THz generation mechanism is the inverse Edelstein effect contributed spin-to-charge conversion. Thickness-, temperature-, and structure-dependent nontrivial THz transients reveal that topology-enhanced interlayer exchange coupling increases the FGT Curie temperature to room temperature, which provides an effective approach for engineering THz spin-current pulses. These results contribute to the goal of all-optical generation, manipulation, and detection of ultrafast THz spin currents in room-temperature 2D magnetism, accelerating the development of atomically thin high-speed spintronic devices.

Quantum spin Hall effect in tilted penta silicene and its isoelectronic substitutions.

Silicene, a competitive two-dimensional (2D) material for future electronic devices, has attracted intensive attention in condensed matter physics. Utilizing an adaptive genetic algorithm (AGA), we identify a topological allotrope of silicene, named tilted penta (tPenta) silicene. Based on first-principles calculations, the geometric and electronic properties of tPenta silicene and its isoelectronic substitutions (Ge, Sn) are investigated. Our results indicate that tPenta silicene exhibits a semimetallic state with distorted Dirac cones in the absence of spin-orbit coupling (SOC). When SOC is considered, it shows semiconducting behavior with a gap opening of 2.4 meV at the Dirac point. Based on the results of invariant ( = 1) and the helical edge states, we demonstrate that tPenta silicene is a topological insulator. Furthermore, the effect of isoelectronic substitutions on tPenta silicene is studied. Two stoichiometric phases, i.e., tPenta Si0.333Ge0.667 and tPenta Si0.333Sn0.667 are found to retain the geometric framework of tPenta silicene and exhibit high stabilities. Our calculations show that both tPenta Si0.333Ge0.667 and tPenta Si0.333Sn0.667 are QSH insulators with enlarged band gaps of 32.5 meV and 94.3 meV, respectively, at the HSE06 level, offering great potential for practical applications at room temperature.

Two-Dimensional Janus Antimony Selenium Telluride with Large Rashba Spin Splitting and High Electron Mobility.

Janus two-dimensional materials with large Rashba spin splitting and high electron mobility are rarely reported but highly desired for nanoscale spintronics. Herein, using density functional theory calculations, we predicated Janus Sb2SexTe3–x (x = 1 or 2) monolayers simultaneously harboring these fascinating properties. The predicated monolayers are indirect semiconductors with great dynamical, thermal, and mechanical stability. The spin–orbital coupling (SOC) and the out-of-plane asymmetry lead to Rashba spin splitting at the conduction band minimum (CBM), which can be effectively tuned by the small uniaxial strain. The strong band dispersion at the CBM leads to small electron effective mass, consequently enabling a high electron mobility that reaches up to 6816.63 cm2 V–1 s–1. Moreover, Janus Sb2SexTe3–x monolayers possess great light absorption capability within the visible and infrared regions of solar light. Our findings highlight promising candidates for high-speed spintronic devices and may motivate more research efforts on carrier transport and SOC effects in Janus group V and VI monolayers.

Ferromagnetic resonance modes of a synthetic antiferromagnet at low magnetic fields

One key advantage of antiferromagnets over ferromagnets is the high magnetic resonance frequencies that enable ultrafast magnetization switching and oscillations. Among a variety of antiferromagnets, the synthetic antiferromagnet (SAF) is a promising candidate for high-speed spintronic devices design. In this paper, micromagnetic simulations are employed to study the resonance modes in an SAF structure consisting of two identical CoFeB ferromagnetic (FM) layers that are antiferromagnetically coupled via interlayer exchange coupling. When the external bias magnetic field is small enough to ensure the magnetizations of two FM sublayers remain antiparallel alignments, we find that there exist two resonance modes with different precession chirality, namely y-component synchronized mode and z-component synchronized mode, respectively. These two resonance modes show different features from the conventional in-phase acoustic mode and out-of-phase optic mode. The simulation results are in good agreement with our theoretical analyses.

Large ultrafast-modulated Voigt effect in noncollinear antiferromagnet Mn3Sn

The time-resolved magneto-optical (MO) Voigt effect can be utilized to study the Néel order dynamics in antiferromagnetic (AFM) materials, but it has been limited for collinear AFM spin configuration. Here, we have demonstrated that in Mn3Sn with an inverse triangular spin structure, the quench of AFM order by ultrafast laser pulses can result in a large Voigt effect modulation. The modulated Voigt angle is significantly larger than the polarization rotation due to the crystal-structure related linear dichroism effect and the modulated MO Kerr angle arising from the ferroic ordering of cluster magnetic octupole. The AFM order quench time shows negligible change with increasing temperature approaching the Néel temperature (TN), in markedly contrast with the pronounced slowing-down demagnetization typically observed in conventional magnetic materials. This atypical behavior can be explained by the influence of weakened Dzyaloshinskii–Moriya interaction rather than the smaller exchange splitting on the diminished AFM order near TN. The temperature-insensitive ultrafast spin manipulation can pave the way for high-speed spintronic devices either working at a wide range of temperature or demanding spin switching near TN.

Large spin Hall angle in nonmagnetic PtSn alloy films at room temperature

High efficient nonmagnetic materials for generating and detecting spin currents are extremely sought after for prospective spintronic devices. We investigate the spin pumping and inverse spin Hall effects (ISHE) in Y3Fe5O12 (YIG)/ Pt1-xSnx (x = 0.06, 0.11, 0.17, 0.23, 0.28) bilayer using a coplanar waveguide based broadband ferromagnetic resonance setup. We find that the measured effective spin mixing conductance geff↑↓ and spin Hall angle θSH strongly correlate with the Sn content. A large spin Hall angle θSH = 0.089 ± 0.001 is obtained in a Pt0.77Sn0.23 alloy film while θSH = 0.055 ± 0.001 in pure Pt thin film under the same conditions. This enhancement of spin Hall angle is due to skew scattering from the Sn impurities resulting from spin-orbit interaction. Meanwhile, the spin Hall (SH) resistivity of the spin current induced by Sn impurities in Pt has been revealed. The SH resistivity of Pt1-xSnx remain pretty low values (0.17–1.1 × 10−9 Ω⋅m), which are promising for construct high-speed spintronic devices exploiting the spin Hall effect.

Synthesis, magnetic ordering, transport studies on spintronic device heterostructures of 2D magnetic materials: A review

2D magnetic materials are either monolayer or few layers of 3D van der Waals materials (graphite, MoS2, MoSe2, WSe2, CrI3 etc.) which can be easily cleaved in perpendicular direction by simple and cost-effective exfoliation techniques. This review summarizes the synthesis methods, magnetic properties and transport measurements done on magnetic tunnel junctions, spin valves, multilayer heterostructures made up of 2D magnetic materials. This research area was started in 2017 when intrinsic 2D ferromagnetic ordering was observed in two systems, Cr2Ge2Te3 and CrI3 which was otherwise not possible theoretically as the Mermin–Wagner theorem. As per this theorem, thermal fluctuation will abolish long-range magnetic order in 2D system at finite temperature although 2D Ising type ferromagnetism is possible. Post 2017, there has been extensive research efforts done to explore promising 2D magnetic materials theoretically as well as experimentally as these magnetic 2D layers in vDW heterostructures will open up new possibilities for designing efficient low power- high speed spintronic devices such as magnetic tunnel junctions (MTJs), spin valves, spin filters, spin-FETs, magnetic memory devices and spin torque nano-oscillators.

Spin-Orbit Torque Switching of a Nearly Compensated Ferrimagnet by Topological Surface States.

Utilizing spin-orbit torque (SOT) to switch a magnetic moment provides a promising route for low-power-dissipation spintronic devices. Here, the SOT switching of a nearly compensated ferrimagnet Gdx (FeCo)1- x by the topological insulator [Bi2 Se3 and (BiSb)2 Te3 ] is investigated at room temperature. The switching current density of (BiSb)2 Te3 (1.20 × 105 A cm-2 ) is more than one order of magnitude smaller than that in conventional heavy-metal-based structures, which indicates the ultrahigh efficiency of charge-spin conversion (>1) in topological surface states. By tuning the net magnetic moment of Gdx (FeCo)1- x via changing the composition, the SOT efficiency has a significant enhancement (6.5 times) near the magnetic compensation point, and at the same time the switching speed can be as fast as several picoseconds. Combining the topological surface states and the nearly compensated ferrimagnets provides a promising route for practical energy-efficient and high-speed spintronic devices.

Large terahertz magnetization response in ferromagnetic nanoparticles

Ultra-fast coherent magnetization reversal, which is indispensable for high-speed spintronic devices, is expected to be realized by irradiation with a nearly monocyclic terahertz pulse. In this letter, using MnAs ferromagnetic nanoparticles embedded in a GaAs host matrix, we observe a large modulation up to 20% of the magnetization of these nanoparticles with terahertz pump pulse irradiation. This modulation ratio is the largest value ever reported for terahertz magnetization modulation. We reveal that the modulation is induced by the electric-field component of the terahertz pulse via spin-carrier interactions. Ferromagnetic nanoparticle systems are promising, and material designing is the key for ultrafast magnetization reversal using terahertz pulses.

Voltage-Driven High-Speed Skyrmion Motion in a Skyrmion-Shift Device

Magnetic skyrmions are promising information carriers for building future high-density and high-speed spintronic devices. However, to achieve a current-driven high-speed skyrmion motion, the required driving current density is usually very large, which could be energy inefficient and even destroy the device due to Joule heating. Here, we propose a voltage-driven skyrmion motion approach in a skyrmion shift device made of magnetic nanowires. The high-speed skyrmion motion is realized by utilizing the voltage shift, and the average skyrmion velocity reaches up to 259 m/s under 0.45 V applied voltage. In comparison with the widely studied vertical current-driven model, the energy dissipation is three orders of magnitude lower in our voltage-driven model, for the same speed motion of skyrmions. Our approach uncovers valuable opportunities for building skyrmion racetrack memories and logic devices with both ultra-low power consumption and ultra-high processing speed, which are appealing features for future spintronic applications.

Current-Induced Domain Wall Motion in a Compensated Ferrimagnet.

Owing to the difficulty in detecting and manipulating the magnetic states of antiferromagnetic materials, studying their switching dynamics using electrical methods remains a challenging task. By employing heavy-metal-rare-earth-transition-metal alloy bilayers, we experimentally study current-induced domain wall dynamics in an antiferromagnetically coupled system. We show that the current-induced domain wall mobility reaches a maximum at the angular momentum compensation point. With experiment and modeling, we further reveal the internal structures of domain walls and the underlying mechanisms for their fast motion. We show that the chirality of the ferrimagnetic domain walls remains the same across the compensation points, suggesting that spin orientations of specific sublattices rather than net magnetization determine Dzyaloshinskii-Moriya interaction in heavy-metal-ferrimagnet bilayers. The high current-induced domain wall mobility and the robust domain wall chirality in compensated ferrimagnetic material opens new opportunities for high-speed spintronic devices.

Novel Chern insulators with half-metallic edge states

The central target of spintronics research is to achieve flexible control of highly efficient and spin-polarized electronic currents. Based on first-principles calculations and k·p models, we demonstrate that Cu2S/MnSe heterostructures are a novel type of Chern insulators with half-metallic chiral edge states and a very high Fermi velocity (0.87 × 106 m s−1). The full spin-polarization of the edge states is found to be robust against the tuning of the chemical potential. Unlike the mechanisms reported previously, this heterostructure has quadratic bands with a normal band order, that is, the p/d-like band is below the s-like band. Charge transfer between the Cu2S moiety and the substrate results in variation in the occupied bands, which together with spin–orbit coupling, triggers the appearance of the topological state in the system. These results imply that numerous ordinary semiconductors with normal band order may convert into Chern insulators with half-metallic chiral edge states through this mechanism, providing a strategy to find a rich variety of materials for dissipationless, 100% spin-polarized and high-speed spintronic devices.

Unifying ultrafast demagnetization and intrinsic Gilbert damping in Co/Ni bilayers with electronic relaxation near the Fermi surface

The ability to controllably manipulate the laser-induced ultrafast magnetic dynamics is a prerequisite for future high-speed spintronic devices. The optimization of devices requires the controllability of the ultrafast demagnetization time ${\ensuremath{\tau}}_{M}$ and intrinsic Gilbert damping ${\ensuremath{\alpha}}_{\mathrm{intr}}$. In previous attempts to establish a relationship between ${\ensuremath{\tau}}_{M}$ and ${\ensuremath{\alpha}}_{\mathrm{intr}}$, the rare-earth doping of a permalloy film with two different demagnetization mechanisms was not a suitable candidate. Here, we choose Co/Ni bilayers to investigate the relations between ${\ensuremath{\tau}}_{M}$ and ${\ensuremath{\alpha}}_{\mathrm{intr}}$ by means of the time-resolved magneto-optical Kerr effect (TR-MOKE) via adjusting the thickness of the Ni layers, and obtain an approximately proportional relation between these two parameters. The remarkable agreement between the TR-MOKE experiment and the prediction of a breathing Fermi-surface model confirms that a large Elliott-Yafet spin-mixing parameter ${b}^{2}$ is relevant to the strong spin-orbital coupling at the Co/Ni interface. More importantly, a proportional relation between ${\ensuremath{\tau}}_{M}$ and ${\ensuremath{\alpha}}_{\mathrm{intr}}$ in such metallic films or heterostructures with electronic relaxation near the Fermi surface suggests the local spin-flip scattering dominates the mechanism of ultrafast demagnetization, otherwise the spin-current mechanism dominates. It is an effective method to distinguish the dominant contributions to ultrafast magnetic quenching in metallic heterostructures by simultaneously investigating both the ultrafast demagnetization time and Gilbert damping. Our work can open an avenue to manipulate the magnitude and efficiency of terahertz emission in metallic heterostructures such as perpendicular magnetic anisotropic Ta/Pt/Co/Ni/Pt/Ta multilayers, and then it has an immediate implication for the design of high-frequency spintronic devices.

Terahertz excited plasmon-magnon interaction and magnetoplasmon-enhanced energy transfer within the framework of generalized spin Hamiltonian

Research into ultrafast terahertz technology attracts a significant interest nowdays in the fields of plasmonics and magnonics, since a recent progress in both fields unveils new fundamental physics and opens up new opportunities to engineering high-speed spintronic devices. However insufficient exchange of knowledge between these research fields still remains. The goal of this paper is to bridge such a gap by presenting a new theoretical approach to study magnetoplasmon-enhaced energy transfer between supported magnetic nanoparticles in the framework of generalized spin Hamiltonian (GSH) under ultrafast THz-wave excitation.

YN2 monolayer: Novel p-state Dirac half metal for high-speed spintronics

In spintronics, it is highly desirable to find new materials that can simultaneously possess complete spin-polarization, high-speed conduction electrons, large Curie temperature, and robust ferromagnetic ground states. Using first-principles calculations, we demonstrate that the stable YN2 monolayer with octahedral coordination is a novel p-state Dirac half metal (DHM), which not only has a fully spin-polarized Dirac state, but also the highest Fermi velocity (3.74 × 105 m/s) of the DHMs reported to date. In addition, its half-metallic gap of 1.53 eV is large enough to prevent the spin-flip transition. Because of the strong nonlocal p orbitals of N atoms (N-p) direct exchange interaction, the Curie temperature reaches over 332 K. Moreover, its ferromagnetic ground state can be well preserved under carrier doping or external strain. Therefore, the YN2 monolayer is a promising DHM for high-speed spintronic devices and would lead to new opportunities in designing other p-state DHMs.