Abstract
The central target of spintronics research is to achieve flexible control of highly efficient and spin-polarized electronic currents. Based on first-principles calculations and k·p models, we demonstrate that Cu2S/MnSe heterostructures are a novel type of Chern insulators with half-metallic chiral edge states and a very high Fermi velocity (0.87 × 106 m s−1). The full spin-polarization of the edge states is found to be robust against the tuning of the chemical potential. Unlike the mechanisms reported previously, this heterostructure has quadratic bands with a normal band order, that is, the p/d-like band is below the s-like band. Charge transfer between the Cu2S moiety and the substrate results in variation in the occupied bands, which together with spin–orbit coupling, triggers the appearance of the topological state in the system. These results imply that numerous ordinary semiconductors with normal band order may convert into Chern insulators with half-metallic chiral edge states through this mechanism, providing a strategy to find a rich variety of materials for dissipationless, 100% spin-polarized and high-speed spintronic devices.
Highlights
Microelectronic developments have given rise to an urgent need for new information storage and transport technologies and materials with very low energy consumption and high response speeds
Based on first-principles calculations and k·p models, we demonstrate that Cu2S/MnSe heterostructures are a novel type of Chern insulators with half-metallic chiral edge states and a very high Fermi velocity (0.87 × 106 m s − 1)
Charge transfer between the Cu2S moiety and the substrate results in variation in the occupied bands, which together with spin–orbit coupling, triggers the appearance of the topological state in the system. These results imply that numerous ordinary semiconductors with normal band order may convert into Chern insulators with half-metallic chiral edge states through this mechanism, providing a strategy to find a rich variety of materials for dissipationless, 100% spin-polarized and high-speed spintronic devices
Summary
Microelectronic developments have given rise to an urgent need for new information storage and transport technologies and materials with very low energy consumption and high response speeds. Based on first-principles calculations and k·p models, we demonstrate that Cu2S/MnSe heterostructures are a novel type of Chern insulators with half-metallic chiral edge states and a very high Fermi velocity (0.87 × 106 m s − 1).
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