We investigate the effects of incorporating single-walled carbon nanotubes (CNTs) into sol-gel-derived ZnO thin films to enhance their optoelectronic properties for photodetector applications. ZnO thin films were fabricated on c-plane sapphire substrates with varying CNT concentrations ranging from 0 to 2.0 wt%. Characterization techniques, including high-resolution X-ray diffraction, photoluminescence, and atomic force microscopy, demonstrated the preferential growth of the ZnO (002) facet and improved optical properties with the increase in the CNT content. Electrical measurements revealed that the optimal CNT concentration of 1.5 wt% resulted in a significant increase in the dark current (from 0.34 mA to 1.7 mA) and peak photocurrent (502.9 µA), along with enhanced photoresponsivity. The rising and falling times of the photocurrent were notably reduced at this concentration, indicating improved charge dynamics due to the formation of a p-CNT/n-ZnO heterojunction. The findings suggest that the incorporation of CNTs not only modifies the structural and optical characteristics of ZnO thin films but also significantly enhances their electrical performance, positioning CNT-ZnO composites as promising candidates for advanced photodetector technologies in optoelectronic applications.
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