AbstractPhotoinduced current transient spectroscopy, in its conventional doublegate version, has been used extensively in the characterization of deep levels in semiinsulating materials. The analysis of the digitally captured transient signals by the post capture double gate method is a parallel technique with much more advantages. One of the drawbacks of the latter is, of course, the excessive time needed to capture data with a high signal‐to‐noise ratio. We have shown that the capturing time can be chosen tobe relatively low and the signal‐to‐noise ratio can be improved by a post capture data analysis referred to as the additive double gate analysis. The usefulness of this approach is demonstrated by the results obtained, for the first time, on high resistivity films of cuprous oxide. Thetechnique leads to the identification and measurement of the parameters of a few deep levels. The apparent activation energies of these levels are 0.33, 0.47, 0.49, and 0.59 eV. The corresponding capture cross sections are 2 × 10−17, 7 × 10−12, 1 × 10−15 (7 × 10−13), and 4 × 10−15 cm2, respectively.