Cathodoluminescence (CL) spectroscopy and microscopy and Raman scattering measurements of homoepitaxial diamond films, grown at substrate temperatures of 900 and 1200°C by microwave plasma-assisted chemical vapor deposition, reveal the preferential incorporation of defects in films grown on the (111) and (320) faces of diamond substrates compared with those grown on the (001) faces. The CL features observed include the broad bands centered at around 440 nm (2.82 eV) and 550 nm (2.25 eV) and a narrow band at about 740 nm (1.675 eV). The diamond films grown on the (111) faces exhibit strong non-uniformities in the distribution of impurities ( e.g. Si) and defects. The distribution of the 550 nm and 740 nm bands can be correlated with the topographic features in these films. The diamond films grown on the (001) faces show no 550 nm and 740 nm bands, and high-quality regions exhibit uniform monochromatic (440 nm) CL images.