High-quality Interface Research Articles

A New Back-End-Of-Line Ferroelectric Field-Effect Transistor Platform via Laser Processing.

The discovery of ferroelectricity in hafnia-based materials has revitalized interest in realizing ferroelectric field-effect transistors (FeFETs) due to its compatibility with modern microelectronics. Furthermore, low-temperature processing by atomic layer deposition offers promise for realizing monolithic three-dimensional (M3D) integration toward energy- and area-efficient computing paradigms. However, integrating ferroelectrics with channel materials in FeFETs for M3D integration remains challenging due to the dual requirement of a high-quality ferroelectric-channel interface and low-power operation, all while maintaining back-end-of-line (BEOL)-compatible fabrication temperatures. Recent studies on 2D semiconductors and metal oxide channels highlight these challenges. Polycrystalline silicon (poly-Si), a channel material long integrated into the semiconductor industry, presents a promising alternative; however, its high fabrication temperature has hindered its applications to M3D integration. To overcome this challenge, wedemonstrates a BEOL-compatible FeFET platform using poly-Si channels fabricated via locally-confined laser thermal processing and hafnia-based ferroelectrics by low-temperature atomic layer deposition with wafer-scale uniformity. The local nature of the laser processing mitigates the trade-off between the high-temperature crystallization for the quality of the interface and BEOL thermal budget constraints. The laser-processed FeFETs boast the largest effective memory widow for all BEOL-compatible FeFETs. Moreover, the fabricated FeFETs are integrated into wafer-scale synaptic arrays for neuromorphic computing, achieving record-high energy efficiency. Therefore, this work establishes a promising BEOL-compatible FeFET materials platform toward M3D integration.

Si/AlN p-n heterojunction interfaced with ultrathin SiO2

Ultra-wide bandgap (UWBG) materials offer significant potential for high-power RF electronics and deep ultraviolet photonics. Among these, AlxGa1−xN stands out due to its tunable bandgap (3.4 eV to 6.2 eV) and excellent material properties. However, achieving efficient p-type doping in high aluminum composition AlGaN remains a challenge. This study presents a novel approach by fabricating a p+Si/n-AlN/n+AlGaN heterojunction using semiconductor grafting. Atomic force microscopy (AFM) revealed smooth surfaces for AlN and the nanomembrane, with roughness values of 1.96 nm and 0.545 nm, respectively. High-angle annular dark field scanning transmission electron microscopy (HAADF-STEM) confirmed a sharp and well-defined Si/AlN interface with minimal defects and strong chemical bonding. X-ray photoelectron spectroscopy (XPS) measurements identified a type-I heterojunction with a valence band offset (ΔEv) of 2.73–2.84 eV and a conduction band offset (ΔEc) of 2.22–2.11 eV. The pn diode devices exhibited linear current–voltage (I-V) characteristics, an ideality factor of 1.92, and a high rectification ratio of 3.3 × 104, with a turn-on voltage of 3.9 V. Temperature-dependent I-V measurements showed stable operation up to 90 °C. The heterojunction’s high-quality interface and impressive electrical performance underscore its potential for advanced AlGaN-based optoelectronic and electronic applications.

Directing Charge Carriers and Ferroelectric Domains at Lateral Interfaces in van der Waals Heterostructures.

Emergent phenomena in traditional ferroelectrics are frequently observed at heterointerfaces. Accessing such functionalities in van der Waals ferroelectrics requires the formation of layered heterostructures, either vertically stacked (similar to oxide ferroelectrics) or laterally stitched (without equivalent in 3D-crystals). Here, we investigate lateral heterostructures of the ferroelectric van der Waals semiconductors SnSe and SnS. A two-step process produces ultrathin crystals comprising an SnSe core laterally joined to an SnS edge-band, as confirmed by Raman spectroscopy, transmission electron microscopy (TEM) imaging, and electron diffraction. TEM shows a moiré pattern across the SnSe core due to coverage by an ultrathin SnS layer. The ability of the lateral interface (IF) to direct excited carriers, probed by cathodoluminescence, shows electron transfer over 560 nm diffusion length from the SnS edge-band. Large, thin flakes supporting ferroelectricity allow investigating domains and domain wall interactions in uniform crystals and lateral heterostructures. Polarized optical microscopy of sub-20 nm flakes consistently shows ⟨110⟩ oriented stripe domains with mirror-twin domain walls. Heterostructures adopt two domain configurations, with domains either constrained to the SnSe core or propagating across the entire SnSe-SnS flakes. The combined results demonstrate multifunctional van der Waals heterostructures with high-quality IFs presenting extraordinary opportunities for manipulating carrier flows and ferroelectric domain patterns.

Single-Shot Readout and Weak Measurement of a Tin-Vacancy Qubit in Diamond

The negatively charged tin-vacancy center in diamond (SnV−) is an emerging platform for building the next generation of long-distance quantum networks. This is due to the SnV−’s favorable optical and spin properties including bright emission, insensitivity to electronic noise, and long spin coherence times at temperatures above 1 K. Here, we demonstrate measurement of a single SnV− electronic spin with a single-shot readout fidelity of 87.4%, which can be further improved to 98.5% by conditioning on multiple readouts. In the process, we develop understanding of the relationship between strain, magnetic field, spin readout, and microwave spin control. We show that high-fidelity readout is compatible with rapid microwave spin control, demonstrating a favorable parameter regime for use of the SnV− center as a high-quality spin-photon interface. Finally, we use weak quantum measurement to study measurement-induced dephasing; this illuminates the fundamental interplay between measurement and decoherence in quantum mechanics, and provides a universal method to characterize the efficiency of color-center spin readout. Taken together, these results overcome an important hurdle in the development of the SnV−-based quantum technologies and, in the process, develop techniques and understanding broadly applicable to the study of solid-state quantum emitters. Published by the American Physical Society 2024

Improving thermal shock and oxidation resistance of Cr3C2/WC-NiCr cermet coating by embedding large NiCrAlY superalloy particles

Cr3C2/WC-based cermet coating is widely used on the surface of mechanical equipment to strengthen its wear and corrosion resistance. Improving the high-temperature performance of cermet coating is the key to its industrial application. In this study, a novel type of bimodal microstructure cermet coating with the design of functional sites was fabricated via high-velocity air fuel (HVAF) spray technology. The toughness NiCrAlY superalloy particles are introduced into the traditional Cr3C2/WC-NiCr cermet structure to construct the thermal stress release site, which significantly improved the thermal shock resistance and thermal oxidation properties of the coating. The addition of NiCrAlY superalloy particle reduces the porosity of Cr3C2/WC-NiCr coating to 0.29 % and creates high-quality interface bonding and surface passivation layer. The newly structured cermet coating exhibits outstanding high-temperature performance. In a 1000 °C oxidation environment, the new coating remained intact after 120 h of exposure, while the traditional Cr3C2/WC-NiCr cermet coating exfoliated completely after 48 h of exposure. Further, in the thermal shock condition at 1000 °C, the lifetime of the new coating is 50 times greater than that of the traditional cermet coating, displaying excellent ability to relieve thermal stress. Additionally, the new coating shows good wear resistance and stability during high-temperature thermal exposure. After thermal exposure for 24 h and 72 h, the wear rates of the coating are 5.28 and 5.83 × 10−5 mm3 N−1 m−1, respectively, which is slightly lower than that of the as-sprayed coating. This study provides guidance for the improvement of high temperature resistance of thermally sprayed Cr3C2/WC-based cermet coatings.

Study on preparation and performance of CoS2/NiS2-CNT@C anode material for high-performance lithium‑sulfur batteries

Functional carbon materials with high porosity have been widely used in energy storage materials. In this work, a porous carbon skeleton was constructed by a rigid template method, and carbon nanotubes grown in situ in the skeleton to realize the organic combination of the honeycomb structure and carbon nanotubes, thereby forming a carrier material with a specific structure. At the same time, bimetallic sulfide (CoS2/NiS2) was introduced as a modification material on the specific structure. The two transition metal sulfides have a matching energy band structure, which can form a high-quality interface in the composite. The electron transfer can be accelerated through the interface between different substances, and the electron regulation and redistribution can be realized, thereby further improving the reaction kinetics. Electrochemical tests also confirmed the superiority of its performance. At a current density of 0.5 A/g, the first discharge-specific capacity reached 1378.9 mAh/g, and there was still a capacity of 993.5 mAh/g after 100 cycles. Even at a high current (5 A/g), the capacity remained at 503 mAh/g.

2D Gr/WSe2/MoTe2 vertical heterojunction for self-powered photodiode with ultrafast response and high sensitivity

Two-dimensional materials without lattice constraints can be combined into form heterojunctions via van der Waals forces, providing opportunities for the future development of novel high-performance photodetectors. In non-vertical heterojunction devices with long carrier transport channels, SRH recombination due to defect and interface states in the heterojunction and Langevin recombination due to Coulomb interactions induce large amounts of photogenerated carrier recombination, leading to low quantum efficiencies of the heterojunction. At the same time, defect and interface trap states, as well as the long channel of the non-vertical heterojunction device, lead to a slow response speed of the device. In this work, a 2D WSe2/MoTe2 vertical heterojunction photodiode with a transparent graphene top electrode has been designed to simultaneously achieve high sensitivity and fast response speed of photodetectors. Benefiting from the vertical device structure, high-quality interface and low contact resistance, the photogenerated electron-hole pairs can be efficiently separated and transported. The photodiode exhibits remarkable rectification characteristics with a rectification ratio as high as 1.4 × 104, and provides a broadband and self-powered photodetection from the visible to NIR bands (405–1064 nm) with a maximum responsivity of 0.33 A/W at 785 nm. In particular, the photodiode achieves an ultra-fast rise/fall time of 6.49/6.22 μs at 0 V and a further reduction of the response time to 1.68/1.2 μs at a reverse bias of −1 V. This ultra-fast response allows the photodiode to detect switching signals with a cutoff frequency of more than 70 kHz and 200 kHz at 0 V and −1 V, respectively. This work opens up new opportunities for the development of integrated 2D photodetectors with low power consumption, high sensitivity, and high speed.

In Situ Vanadium Modification Induced a Back Interfacial Field Passivation Effect toward Efficient Kesterite Solar Cells beyond 11% Efficiency.

Realization of a high-quality back electrode interface (BEI) with suppressed recombination is crucial for Cu2ZnSn(S,Se)4 (CZTSSe) solar cells. To achieve this goal, the construction of a traditional chemical passivation effect has been widely adopted and investigated. However, there is currently a lack of reports concerning the construction of a field passivation effect (FPE) for the BEI. Herein, considering the characteristic of the negligible difference in ionic radius between Mo (0.65 Å) and V (0.64 Å) as well as the presence of one less valence electron compared to Mo, vanadium (V) was employed and in situ incorporated into the MoSe2 interfacial layer during the deposition of the Mo:V electrode and selenization process. This allowed for the establishment of a desirable in situ VI-FPE interface with p-MoSe2:V/p-CZTSSe at the BEI. The p-type characteristic in MoSe2:V is attributed to the presence of the VMo acceptor; notably, the Fermi energy level of MoSe2:V has shifted downward by 0.62 eV compared to MoSe2, thereby facilitating the formation of an optimized band alignment between MoSe2:V and the absorber. Consequently, the photovoltaic parameters of the cell-FPE have experienced a significant increase due to the enhanced carrier transportation efficiency compared to cell-ref, resulting in a remarkable improvement in efficiency from 8.28 to 11.11%.

Controlled Synthesis of 2D Ferromagnetic/Antiferromagnetic Cr7Te8/MnTe Vertical Heterostructures for High-Tunable Coercivity.

Two-dimensional ferromagnetic/antiferromagnetic (2D-FM/AFM) heterostructures are of great significance to realize the application of spintronic devices such as miniaturization, low power consumption, and high-density information storage. However, traditional mechanical stacking can easily damage the crystal quality or cause chemical contamination residues for 2D materials, which can result in weak interface coupling and difficulty in device regulation. Chemical vapor deposition (CVD) is an effective way to achieve a high-quality heterostructure interface. Herein, high-quality interface 2D-FM/AFM Cr7Te8/MnTe vertical heterostructures were successfully synthesized via a one-pot CVD method. Moreover, the atomic-scale structural scanning transmission electron microscope (STEM) characterization shows that the interface of the vertical heterostructure is clear and flat without an excess interface layer. Compared to the parent Cr7Te8, the coercivity (HC) of the high-quality interface Cr7Te8/MnTe heterostructure is significantly reduced as the thickness of MnTe increases, with a maximum decrease of 74.5% when the thickness of the MnTe nanosheet is around 30 nm. Additionally, the HC of the Cr7Te8/MnTe heterostructure can also be regulated by applying a gate voltage, and the HC increases or decreases with increasing positive or negative gate voltages. Thus, the effective regulation of HC is essential to improving the performance of advanced spintronic devices (e.g., MRAM and magnetic sensors). Our work will provide ideas for spin controlling and device application of 2D-FM/AFM heterostructures.

Effect of vacuum diffusion bonding on the mechanical and conductive properties of bonded bulk copper single crystals

Recrystallization-free atomic-level (AL) bonding between bulk copper single crystals was achieved by combining chemical mechanical polishing (CMP) and vacuum diffusion bonding. Under various bonding conditions, the bonded copper specimens can be classified into three categories: AL-bonded, HH-bonded, and L-bonded specimens. AL-bonded copper single crystals were obtained by performing bonding under 20 MPa at 600 °C for 60 min, achieving the mechanical and electrical properties that are closest to those of the parent copper single crystal. The AL-bonded interface is characterized by an asymmetrically tilted sub-grain boundary with a 2° misorientation and consists of two sets of edge dislocations with mutually perpendicular Burgers vectors. The formation of the AL-bonded interface depends on two critical factors: the creation of ultra-flat bonded surfaces and performing diffusion bonding within the elastic deformation range. Achieving an ultra-flat surface that eliminates residual stress allows for bonding under relatively low pressure. With a moderate bonding temperature and holding time, it is possible to simultaneously avoid the formation of voids and recrystallizations at the bonding interface, thereby achieving a high-quality AL-bonded interface between bulk copper single crystals.

Microstructure Evolution and Electrical Behaviors for High-Performance Cu2O/Zr-Doped β-Ga2O3 Heterojunction Diodes.

Beta-gallium oxide (β-Ga2O3) is emerging as a promising ultrawide band gap (UWBG) semiconductor, which is vital for high-power, high-frequency electronics and deep-UV optoelectronics. It is especially significant for flexible wearable electronics, enabling the fabrication of high-performance Ga2O3-based devices at low temperatures. However, the limited crystallinity and pronounced structural defects arising from the low-temperature deposition of Ga2O3 films significantly restrict the heterojunction interface quality and the relevant electrical performance of Ga2O3-based devices. In this work, cuprous oxide (Cu2O)/Zr-doped β-Ga2O3 heterojunction diodes are fabricated by magnetron sputtering without intentional substrate heating, followed by an investigation into their microstructure and electrical behaviors. Zr doping can markedly enhance the Ga2O3 crystallinity at low substrate temperatures, transforming the amorphous structure of pristine Ga2O3 films into the crystallized β phase. Moreover, crystalline β-Ga2O3 facilitates the epitaxial growth of the Cu2O phase, suppressing the formation of detrimental secondary phase CuO at the heterojunction interface. Benefiting from the high-quality heterojunction interface, the Cu2O/Zr-doped β-Ga2O3 heterojunction diode exhibits a near-ideal electrical behavior with a low ideality factor of 1.6. The consistent electrical parameters extracted from current-voltage (J-V) and capacitance-voltage (C-V) measurements also confirm the high quality of β-Ga2O3. This work highlights the potential for the low-temperature production of high-quality β-Ga2O3-based heterojunction devices through Zr doping.

Wafer-scale bonded GaN–AlN with high interface thermal conductance

Wide and ultrawide bandgap semiconductors, such as GaN, play a crucial role in high-power applications, yet their performance is often constrained by thermal management challenges. In this work, we introduce a high-quality interface between GaN and AlN, prepared through wafer-scale bonding and verified via high-resolution transmission electron microscopy and transport experiments. We experimentally measured the thermal boundary conductance of the GaN–AlN interface, achieving up to 320 MW/m2K at room temperature using an ultrafast optical technique and sensitivity examinations. Non-equilibrium atomistic Green's functions and density functional theory simulations were conducted to model the interface phonon modes and their contributions to thermal transport, demonstrating good agreement with the experimental results from 80 to 300 K. Additionally, we observed a size-dependent effect on the thermal boundary conductance related to the GaN film thickness from 180 to 450 nm, which we attributed to quasi-ballistic thermal transport through molecular dynamics simulations. Our study has demonstrated a scalable processing route for wafer-sized chip packaging and provides fundamental insights to mitigate near-junction thermal resistance. Further exploration of interface engineering could facilitate co-design strategies to advanced thermal management technologies.

Structural and interface band alignment properties of transparent p-type α-GaCrO3:Ni/α-Al2O3 heterojunction

Herein, we report epitaxial growth of p-type Ni doped gallium chromium oxide thin film on Al2O3 substrates and studied its band alignment properties with that of the substrate. Thin films are grown using the magnetron-sputtering technique. Synchrotron-based XRD measurements, performed in the coplanar and non-coplanar geometries, confirm high-quality single domain epitaxial growth of p-type α-GaCrO3:Ni. Pendellosung oscillations around the Bragg peak and transmission electron microscopy reveal the high interfacial quality of p-type α-GaCrO3:Ni films with the substrate. Thin film, thickness ∼200 nm, shows around 70% average transmission. The values of valence band and conduction band offsets are determined to be 2.79 ± 0.2 and 0.51 ± 0.2 eV, respectively, which confirm straddling gap band alignment at the heterojunction. This type of alignment creates a threshold barrier for the selective charge carriers and is useful in enhancing the performance of a wide range of devices, including UV photodetectors, metal oxide semiconductor high electron mobility transistors, and light emitters.

Unfolding the Challenges To Prepare Single Crystalline Complex Oxide Membranes by Solution Processing.

The ability to prepare single crystalline complex oxide freestanding membranes has opened a new playground to access new phases and functionalities not available when they are epitaxially bound to the substrates. The water-soluble Sr3Al2O6 (SAO) sacrificial layer approach has proven to be one of the most promising pathways to prepare a wide variety of single crystalline complex oxide membranes, typically by high vacuum deposition techniques. Here, we present solution processing, also named chemical solution deposition (CSD), as a cost-effective alternative deposition technique to prepare freestanding membranes identifying the main processing challenges and how to overcome them. In particular, we compare three different strategies based on interface and cation engineering to prepare CSD (00l)-oriented BiFeO3 (BFO) membranes. First, BFO is deposited directly on SAO but forms a nanocomposite of Sr-Al-O rich nanoparticles embedded in an epitaxial BFO matrix because the Sr-O bonds react with the solvents of the BFO precursor solution. Second, the incorporation of a pulsed laser deposited La0.7Sr0.3MnO3 (LSMO) buffer layer on SAO prior to the BFO deposition prevents the massive interface reaction and subsequent formation of a nanocomposite but migration of cations from the upper layers to SAO occurs, making the sacrificial layer insoluble in water and withholding the membrane release. Finally, in the third scenario, a combination of LSMO with a more robust sacrificial layer composition, SrCa2Al2O6 (SC2AO), offers an ideal building block to obtain (001)-oriented BFO/LSMO bilayer membranes with a high-quality interface that can be successfully transferred to both flexible and rigid host substrates. Ferroelectric fingerprints are identified in the BFO film prior and after membrane release. These results show the feasibility to use CSD as alternative deposition technique to prepare single crystalline complex oxide membranes widening the range of available phases and functionalities for next-generation electronic devices.

Van der Waals Schottky Junction Photodetector with Ultrahigh Rectifying Ratio and Switchable Photocurrent Generation.

Metal-semiconductor junctions play an important role in the development of electronic and optoelectronic devices. A Schottky junction photodetector based on two-dimensional (2D) materials is promising for self-powered photodetection with fast response speed and large signal-to-noise ratio. However, it usually suffers from an uncontrolled Schottky barrier due to the Fermi level pinning effect arising from the interface states. In this work, all-2D Schottky junctions with near-ideal Fermi level depinning are realized, attributed to the high-quality interface between 2D semimetals and semiconductors. We further demonstrate asymmetric diodes based on multilayer graphene/MoS2/PtSe2 with a current rectification ratio exceeding 105 and an ideality factor of 1.2. Scanning photocurrent mapping shows that the photocurrent generation mechanism in the heterostructure switches from photovoltaic effect to photogating effect at varying drain biases, indicating both energy conversion and optical sensing are realized in a single device. In the photovoltaic mode, the photodetector is self-powered with a response time smaller than 100 μs under the illumination of a 405 nm laser. In the photogating mode, the photodetector exhibits a high responsivity up to 460 A/W originating from a high photogain. Finally, the photodetector is employed for single-pixel imaging, demonstrating its high-contrast photodetection ability. This work provides insight into the development of high-performance self-powered photodetectors based on 2D Schottky junctions.

Interface-Engineered Atomic Layer Deposition of 3D Li4Ti5O12 for High-Capacity Lithium-Ion 3D Thin-Film Batteries.

Upcoming energy-autonomous mm-scale Internet-of-things devices require high-energy and high-power microbatteries. On-chip 3D thin-film batteries (TFBs) are the most promising option but lack high-rate anode materials. Here, Li4Ti5O12 thin films fabricated by atomic layer deposition (ALD) are electrochemically evaluated on 3D substrates for the first time. The 3D Li4Ti5O12 reveals an excellent footprint capacity of 20.23µAhcm-2 at 1 C. The outstanding high-rate capability is demonstrated with 7.75µAhcm-2 at 5mAcm-2 (250 C) while preserving a remarkable capacity retention of 97.4% after 500 cycles. Planar films with various thicknesses exhibit electrochemical nanoscale effects and are tuned to maximize performance. The developed ALD process enables conformal high-quality spinel (111)-textured Li4Ti5O12 films on Si substrates with an area enhancement of 9. Interface engineering by employing ultrathin AlOx on the current collector facilitates a required crystallization time reduction which ensures high film and interface quality and prospective on-chip integration. This work demonstrates that 3D Li4Ti5O12 by ALD can be an attractive solution for the microelectronics-compatible fabrication of scalable high-energy and high-power Li-ion 3D TFBs.

Chemical Bath Deposition of ZnO/ZnGa2O4 Core-Shell Nanowire Heterostructures Using Partial Chemical Conversion.

The development of innovative heterostructures made of ZnO nanowires is of great interest for enhancing the performances of many devices in the fields of optoelectronics, photovoltaics, and energy harvesting. We report an original fabrication process to form ZnO/ZnGa2O4 core-shell nanowire heterostructures in the framework of the wet chemistry techniques. The process involves the partial chemical conversion of ZnO nanowires grown via chemical bath deposition into ZnO/ZnGa2O4 core-shell nanowire heterostructures with a high interface quality following their immersion in an aqueous solution containing gallium nitrate heated at a low temperature. The double-step process describing the partial chemical conversion relies on successive dissolution and reaction mechanisms. The present finding offers the possibility to fabricate ZnO/ZnGa2O4 core-shell nanowire heterostructures at low temperatures and over a wide variety of substrates with a large surface area, which is attractive for nanostructured solar cells, deep-UV photodetectors, and piezoelectric devices.

Superconducting Field-Effect Transistors with PdxTe-Te Intimate Contacts.

Superconducting-based electronic devices have shown great potential for future quantum computing applications. One key building block device is a superconducting field-effect transistor based on a superconductor-semiconductor-superconductor Josephson-junction (JJ) with a gate-tunable semiconducting channel. However, the performance of such devices is highly dependent on the quality of the superconductor to semiconductor interface. In this study, we present an alternative method to obtain a high-quality interface by using intimate contact. We investigate the proximity-induced superconductivity in chiral crystal tellurium (Te) and fabricate a PdxTe-Te-PdxTe JJ with an ambipolar supercurrent that is gate-tunable and exhibits multiple Andreev reflections. The semiconducting two-dimensional Te single crystal is grown hydrothermally and partially converted to superconducting PdxTe by controlled annealing. Our work demonstrates a promising path for realizing controllable superconducting electronic devices with high-quality superconducting interfaces; thus, we can continue to advance the field of quantum computing and other interface-based technologies.

Tuning of interface quality of Al/CeO2/Si device by post-annealing of sol-gel grown high-k CeO2 layers

A comprehensive study has been done on the influence of post-deposition annealing temperature on high-k cerium oxide (CeO2) layer grown on n-type silicon (Si) substrate and its resultant interface states have been studied for Al/CeO2/Si metal-oxide-semiconductor (MOS) devices. The high-k CeO2 thin films were deposited by spin-coating and sintered at different annealing temperatures (Ta) in the range of 400–900 °C. The parameters such as fixed charge density (Qeff), dielectric constant (k) of the layers, flat-band voltage (VFB), interface defect density (Dit), etc., of the MOS device were evaluated from CV and I-V measurements. A minimum value of flat band shift (∼0.05 V) with lower Qeff (−4.81 × 1011 C/cm2) have been achieved for the Ta of 600 °C. The k and Dit were evaluated to be 22 and 1.29 × 1012 cm−2, respectively at the Ta of 600 °C. In addition, the CV measurements showed a very small hysteresis and very low frequency dispersion for the Ta of 600 °C sample. Energy distribution of defect states was evaluated and it was maximum towards the bottom of the conduction band. This shows that the 600 °C is the optimum annealing temperature, which results in high quality interface, and the electron affinity of the corresponding CeO2 layers was found to be 3.29 eV as evaluated from ultraviolet photoelectron spectroscopy (UPS). Further, a maximum value of minority carrier lifetime (147 μs) has been achieved for the samples annealed at Ta of 400 °C, indicating that the post-annealing temperature plays a significant role on the properties of CeO2 films deposited by sol-gel process. Thus, the present study demonstrates the possibility of sol-gel grown high k-CeO2 layers suitable for MOS like devices.

Single Crystal Perovskite/Graphene Self-Driven Photodetector with Fast Response Speed.

Recently, the combination of two-dimensional (2D) materials and perovskites has gained increasing attention in optoelectronic applications owing to their excellent optical and electrical characteristics. Here, we report a self-driven photodetector consisting of a monolayer graphene sheet and a centimeter-sized CH3NH3PbBr3 single crystal, which was prepared using an optimized wet transfer method. The photodetector exhibits a short response time of 2/30 μs by virtue of its high-quality interface, which greatly enhances electron-hole pair separation in the heterostructure under illumination. In addition, a responsivity of ~0.9 mA/W and a detectivity over 1010 Jones are attained at zero bias. This work inspires new methods for preparing large-scale high-quality perovskite/2D material heterostructures, and provides a new direction for the future enhancement of perovskite optoelectronics.