High-purity Germanium Crystals Research Articles

Energy and time characterization of the newly acquired clover detector in Jordan

A comprehensive overview of the Balqarad clover detector acquired by Al-Balqa Applied University in Jordan is given in detail. The detector consists of four high-purity germanium crystals, accompanied by a composite scintillation active shield. Through meticulous testing involving a range of radioactive sources such as 137Cs, 60Co, and 241Am, we evaluate the performance of the clover detector. The associated digital data acquisition system incorporates specialized and unconventional time registers, operating in event-by-event mode. Our objective is to elucidate the energy and time characteristics exhibited by the new system under different operational modes, employing specifically designed offline software. Our findings encompass vital aspects. These aspects include the determination of the optimal time window value for processing data obtained from gamma detection measurements. Another issue that has been considered is the analysis of hit pattern distribution within each individual crystal. Additionally, we calculate the addback factor for the 60Co source, accounting for gamma energies of 1173 keV and 1332 keV while also considering the influence of time window increment.

Design of GRETA Cooling Systems

The Gamma-Ray Energy Tracking Array (GRETA) is a full 4π gamma-ray tracking detector capable of reconstructing the energy and three-dimensional position of gamma-ray interactions within a compact sphere of high-purity germanium crystals. The GRETA Detector Array Sphere will have the capacity to accommodate a total of 30 Germanium Quad Detector Modules (QDM). The 30 QDMs are to be cooled and maintained below 100 K using liquid nitrogen (LN) at all times while the array is in normal operation, and will require regular filling of a LN Dewar on each module. The Dewar is designed to allow the Quad Module to be operated in any orientation with a LN holding time of no less than 12 hours when the detector module is fully powered. An automated LN cooling and refilling system is required to supply LN to the 30 QDMs and ensure them maintained below 100 K. Each of the GRETA QDMs houses a total of 148 pre-amplifier units within the module, and with the high power consumption of each pre-amplifier, active cooling of the pre-amplifier compartment is required. Additionally, each Quad Module will have 4 digitizer modules attached to it, which generate heat and require cooling as well. A closed-loop liquid (Glycol) cooling system will provide the required temperature stability and dissipate power generated heat for electronics. This paper presents design of the GRETA LN cooling system for detectors and the closed-loop liquid cooling system for electronics including technical requirements, design schemes, key components, operation modes, and so on.

Investigating Influential Parameters for High-Purity Germanium Crystal Growth

This paper focuses on the research and development of high-purity germanium (HPGe) crystals for detector fabrication, specifically targeting applications in rare-event physics searches. The primary objective was to produce large-scale germanium crystals weighing >1 kg with a controlled diameter of ∼10 cm and an impurity range of approximately 1010/cm 3. Ensuring structural integrity and excellent crystalline quality requires a thorough assessment of dislocation density, a critical aspect of the crystal development process. Dislocation density measurements play a crucial role in maximizing the sensitivity of HPGe detectors, and our findings confirmed that the dislocation density fell within acceptable ranges for detector fabrication. Additionally, this paper examines the segregation coefficient of various contaminants during the crystal development process. Comprehensive analysis of impurity segregation is essential for reducing contaminant quantities in the crystal lattice and customizing purification processes. This, in turn, minimizes undesired background noise, enhancing signal-to-noise ratios for rare-event physics searches and overall detector performance. The investigation included the segregation coefficients of three major acceptors and one donor in crystals grown at the University of South Dakota, providing valuable insights for optimizing crystal purity and detector efficiency.

Properties of a highly compensated high-purity germanium

The electrical and optical properties of a compensated high-purity germanium (HPGe) single crystal was investigated using various characterization techniques. Aluminium, boron, and phosphorus were the major residual shallow-level impurities identified by photothermal ionization spectroscopy (PTIS). Hall effect measurements performed at low temperatures (77 K) along the growth length reveal that the crystal is p-type at the top and bottom, while n-type in the middle part with a net carrier concentration in the range of 1010–1011 cm−3. The obtained very high resistivity (2.3 ⨯ 108 Ω·cm) at 91 K in the temperature-dependent Hall measurements (TDH) at the bottom part of the crystal indicates a high level of compensation (84%) of charge carriers by deep-level impurities or defects with an activation energy near 0.195 eV. The highest hole mobility(μp=46700cm2/V·s)\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$({\\mu _p} = ~46700\\,{\\rm{c}}{{\\rm{m}}^2}\\,/{\\rm{V}}\\cdot{\\rm{s}})$$\\end{document} at 77 K was obtained at the top part, which is moderately compensated. The carrier lifetimes of the grown HPGe crystals were measured using microwave-detected photoconductivity (MDP) at room temperature. The average carrier lifetime decreases from the top to bottom part of the crystal from 130 to 60 µs, which is less than that of the usually observed values in HPGe crystals due to a strong compensation.

N3G project: front-end electronics and mechanical advances

The higher counting-rate and radiation hardness required by modern gamma spectroscopy experiments highlight the need for a new generation of High-Purity Germanium detectors based on electrons-collecting electrodes. To achieve this goal, new doping technologies are required. The one studied by the N3G (Next Generation Germanium Gamma detectors) project is the Pulsed Laser Melting. Besides the development of innovative segmented High-Purity Germanium crystals, the project is also aimed at developing a detector case complete of contact structures and front-end electronics. A specific integrated circuit pre-amplifier is being designed: a first version was tested at room temperature, using a pulser as pre-amplifier input. A resolution of 1.08 keV with 15 pF input capacitance, reproducing the one of a detector single segment, was obtained with 6 µs shaping time.

Effect of detector crystal size on Compton suppression factors

The geometrical parameters which affect the suppression factor for an HPGe (High Purity Germanium)-NaI Compton suppression spectrometer were studied by a Monte Carlo simulation with the EGS4 system. The spectrums were crated for 5 energy values ranging from 200 keV to 2 MeV. Compton suppression factors (CSFs), the parameters characterizing the system performance, were calculated for different HPGe crystal parameters. It was observed that to obtain better Compton suppressed factors, a laboratory must choose as small HPGe crystal as possible for energy values up to 400 keV. However, for higher energies up to 2 MeV, larger HPGe crystals provide better Compton suppression systems. These findings suggest that the choice of HPGe crystal size can significantly impact the performance of a Compton suppression spectrometer and should be carefully considered in its design and optimization.

The AGATA Spectrometer

The Advanced GAmma Tracking Array (AGATA) is a European project to develop and operate a high-resolution gamma-ray spectrometer. AGATA is based on the technique of gamma-ray energy tracking in electrically segmented high-purity germanium crystals. The tracking technique requires the accurate determination of the energy, time and position of every interaction as a gamma ray deposits its energy within the detector volume. AGATA can measure gamma rays from 10’s of keV to 10 MeV with excellent efficiency and position resolution and has a very high count rate capability. The realisation of AGATA and gamma-ray tracking is a result of many technical advances. AGATA has operated in a series of successful scientific campaigns at Legnaro National Laboratory in Italy, GSI in Germany and GANIL in France. AGATA is now in its next phase of development as it evolves to the full 4π instrument. It is presently starting its next campaign at Legnaro.

Agata detector technology: recent progress and future developments

gamma -ray tracking is based on a new generation of position sensitive high-purity germanium (HPGe) detectors. A novel type of cluster detector was successfully developed and assembled for the high-resolution gamma -ray spectrometer Advanced Gamma Tracking Array AGATA. The core part of the detector consists of three encapsulated, 36-fold segmented HPGe detectors which are operated in a common cryostat. The Ge crystal is hermetically sealed inside an aluminium can. All energy channels provide best energy resolution of core and segment signals for an extended energy range well above 50 MeV. A low cross-talk level was determined for the HPGe detectors and its preamplifier circuitry. Related cross-talk corrections are essential for highest energy resolution and improved position dependent pulse shape information. Recently a new encapsulation technology was put into operation which is based on a renewable metal elastic seal. HPGe detector developments are concerned with technologies for the production of p+ and n+ contacts, the segmentation and passivation of encapsulated HPGe crystals. Semiconductor processing research specifically aimed to develop a stable, thin and easy to segment n+ contact. A novel process, based on pulsed laser melting PLM, was successfully employed to produce very thin n+ and p+ contacts preserving the Ge purity. The contacts were segmented using a photolithographic process and then the intrinsic surface between contacts was passivated to assure the electrical insulation between them. A small detector prototype with three segments was made using these new techniques and then successfully tested.

Development of Large‐Diameter and Very High Purity Ge Crystal Growth Technology for Devices (Crystal Research and Technology 5/2023)

Crystal Research and TechnologyVolume 58, Issue 5 2370009 Cover PictureFree Access Development of Large-Diameter and Very High Purity Ge Crystal Growth Technology for Devices (Crystal Research and Technology 5/2023) First published: 12 May 2023 https://doi.org/10.1002/crat.202370009AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Graphical Abstract A 3-inch diameter, 3-kg mass, high-purity germanium crystal is grown with a net free carrier concentration equivalent to one part per trillion and a dislocation density (EPD values) of 103−104 per cm2. Usually, such single crystals with these dimensions are prerequisite to fabricate larger detectors for “rare events” like neutrinoless double beta decay (0νββ) and dark-matter studies to understand the origin and constituents of our Universe. For further details on the growth of this crystal, see article number 2200286 by Rajappan Radhakrishnan Sumathi and co-workers. Volume58, Issue5May 20232370009 RelatedInformation

A gamma ray spectrometer with Compton suppression on the HL-2A tokamak.

A new broad-energy, high-resolution gamma ray spectrometer (GRS) with Compton suppression function has been developed recently in the HL-2A tokamak to obtain the gamma ray information in the energy range of 0.1-10MeV. This is the first time to develop an anti-Compton GRS for a magnetic confinement fusion device. The anticoincidence detector consists of a large-volume high purity germanium (HPGe) crystal (Φ63 × 63mm2) as the primary detector and eight trapezoidal bismuth germinate (BGO) scintillators (trapezoid crystal with 30mm thickness) as the secondary detector. The anti-coincidence data processing is implemented by a digital-based data acquisition system with fast digitization and software signal processing technology. Using radioisotope gamma ray sources and Monte Carlo N-Particle code, the energy and efficiency of the spectrometer have been calibrated and quantitatively tested. The Compton continuum suppression factor reaches 4.2, and the energy resolution (Full Width at Half Maximum) of the 1.332MeV full energy peak for 60Co is 2.1keV. Measurements of gamma ray spectra with Compton suppression using the spectrometer have been successfully performed during HL-2A discharges with different conditions. The performance of the spectrometer and the first experimental results are presented in this paper.

Towards Next-Generation Small-Size Boron Ion Implanting Apparatus

Abstract The article provides a brief insight in the history of ion implantation, paying special attention to boron ion implantation in high purity Germanium crystal, exclusively valuable in the production of highly effective sensors of high-energy radiation to detect photons in the range of megaelectron-volt or higher up to hard X-ray range. There is a need for small user-friendly implanters in response to urgent demand to scale up production of short wave sensors, which are in exclusive demand for various nuclear safety systems worldwide. Particularly, research driven “high tech” small and medium enterprises in Latvia are among the three leading worldwide producers of such sensors and systems. These SME provide instrumentation to the International Atomic Energy Agency, to the government of Singapore, to the government of Japan to facilitate dealing with nuclear waste management caused by the Fukushima disaster, and to the European Space Agency. The challenge is to find technology that allows the use of solid state boron as ion sources instead of its chemical compounds, which create too many technological difficulties in the beam forming process and in most cases are poisonous. The review of existing solutions points towards a possible breakthrough where hollow cathode plasma combined with radiofrequency inductive coupled plasma can be used to produce boron ions from elemental boron in sufficient quantity to form a high energy ion beam close to 100 kV. Based on the review, promising solutions are offered, the first results of relevant analytic and pilot experiments are analysed and the future experimental roadmap is discussed.

Technology computer aided design based deep level transient spectra: simulation of high-purity germanium crystals

Very often deep level transient spectroscopy (DLTS) specimens deviate from ideal textbook examples, making the interpretation of spectra a huge challenge. This challenge introduces inaccurate estimates of emission signatures and the lack of appropriate estimates for the concentrations of the observed trap levels. In this work it is shown with the example of high-purity germanium that technology computer aided design including symbolic differentiation provides the necessary numerical stability over a wide temperature range to model DLTS spectra. Moreover high-purity germanium is a quasi intrinsic semiconductor for which it is well-known that original small signal theory can introduce strong errors. It is furthermore shown that the parasitic impact of fractional filling and high resistivity material can be modelled and that these modelled spectra can in the future assist the interpretation of experimental results.

Characterization of high-purity germanium (Ge) crystals for developing novel Ge detectors

High-purity germanium (HPGe) crystals are required to be well-characterized before being fabricated into Ge detectors. The characterization of HPGe crystals is often performed with the Hall Effect system, which measures the net carrier concentration, the Hall mobility, and the electrical resistivity. The reported values have a strong dependence on the size of the ohmic contacts and the geometry of the samples used in conducting the Hall Effect measurements. We conduct a systematic study using four samples cut from the same location in a HPGe crystal made into different sized ohmic contacts or different geometries to study the variation of the measured parameters from the Hall Effect system. The results are compared to the C-V measurements provided by the Ge detector made from the same crystal. We report the systematic errors involved with the Hall Effect system and find a reliable technique that minimizes the systematic error to be only a few percent from the Hall Effect measurements.

Study on cosmogenic radioactive production in germanium as a background for future rare event search experiments

Rare event search experiments are one of the most important topics in the field of fundamental physics, and high-purity germanium (HPGe) detectors with an ultra-low radioactive background are frequently used for such experiments. However, cosmogenic activation contaminates germanium crystals during transport and storage. In this study, we investigated the movable shielding containers of HPGe crystals using Geant4 and CRY Monte Carlo simulations. The production rates of 68Ge, 65Zn, 60Co, 55Fe, and 3H were obtained individually for different types of cosmic rays. The validity of the simulation was confirmed through a comparison with the available experimental data. Based on this simulation, we found that the interactions induced by neutrons contribute to approximately 90% of the production rate of cosmogenic activation. In addition, by adding an optimized shielding structure, the production rates of cosmogenic radionuclides are reduced by about one order of magnitude. Our results show that it is feasible to use a shielding container to reduce the cosmogenic radioactivity produced during the transport and storage of high-purity germanium on the ground.

Technology development of high purity germanium crystals for radiation detectors

Abstract High Purity Germanium (HPGe) crystals are indispensable for radiation detection and fundamental research. Among other applications they will be used in the Large Enriched Germanium Experiment for Neutrinoless double beta Decay (LEGEND) experiment for the search of neutrinoless double beta decay of 76 Ge. Ongoing research activities are done in collaboration with members of the existing GERDA experiment. In this context the Leibniz-Institut fur Kristallzuchtung (IKZ) is engaged in the development of HPGe Czochralski crystal growth including purification and characterization of the material. The Ge starting material is purified in a horizontal multi-zone furnace. Two inch Ge single crystals were grown by the Czochralski method and analyzed with respect to electrically active impurities by means of Hall-effect measurements and Photo-thermal Ionization Spectroscopy. The dislocation density is assessed by combining defect etching and optically microscopy imaging. Lateral Photovoltage Scanning is applied to visualize doping striations, which bear information on the shape of the solid–liquid phase boundary during growth.

Impurity concentration dependent electrical conduction in germanium crystals at low temperatures

A germanium single crystal of 7 N+ purity with a diameter of 45 mm and a length of 100 mm has been grown by the Czochralski method. The structural quality of the crystal has been characterized by Laue diffraction. Electrical conduction and Hall measurements are carried out on samples retrieved from different parts of the crystal along the growth axis. The top part of the crystal exhibits the lowest impurity concentration ($${\sim } 10^{12}\,\hbox {cm}^{-3})$$ that gradually increases towards the bottom ($$10^{13}\,\hbox {cm}^{-3})$$. The crystal is n-type at room temperature and the resistivity shows a non-monotonic temperature dependence. There is a transition from n-type to p-type conductivity below room temperature at which bulk resistivity shows a maximum and dip in carrier mobility. The intrinsic to extrinsic transition region shifts towards room temperature as the impurity concentration increases and it reflects the purity level of the crystal. A similar trend is observed in the boron-implanted high purity germanium (HPGe) crystal at different doping levels. The phenomena can be understood as a result of interplay between a temperature dependent conduction mechanism driven by an impurity band and an intrinsic carrier in Ge crystals having fairly low acceptor concentrations ($${<}10^{12}\,\hbox {cm}^{-3})$$.

Fabrication and characterization of high-purity germanium detectors with amorphous germanium contacts

Large, high-purity, germanium (HPGe) detectors are needed for neutrinoless double-beta decay and dark matter experiments. Currently, large (> 4 inches in diameter) HPGe crystals can be grown at the University of South Dakota (USD). We verify that the quality of the grown crystals is sufficient for use in large detectors by fabricating and characterizing smaller HPGe detectors made from those crystals. We report the results from eight detectors fabricated over six months using crystals grown at USD. Amorphous germanium (a-Ge) contacts are used for blocking both electrons and holes. Two types of geometry were used to fabricate HPGe detectors. As a result, the fabrication process of small planar detectors at USD is discussed in great detail. The impact of the procedure and geometry on the detector performance was analyzed for eight detectors. We characterized the detectors by measuring the leakage current, capacitance, and energy resolution at 662 keV with a Cs-137 source. Four detectors show good performance, which indicates that crystals grown at USD are suitable for making HPGe detectors.

Investigation of amorphous germanium contact properties with planar detectors made from USD-grown germanium crystals

The characterization of detectors fabricated from home-grown crystals is the most direct way to study crystal properties. We fabricated planar detectors from high-purity germanium (HPGe) crystals grown at the University of South Dakota (USD). In the fabrication process, a HPGe crystal slice cut from a USD-grown crystal was coated with a high resistivity thin film of amorphous Ge (a-Ge) followed by depositing a thin layer of aluminum on top of the a-Ge film to define the physical area of the contacts. We investigated the detector performance including the I-V characteristics, C-V characteristics and spectroscopy measurements for a few detectors. The results document the good quality of the USD-grown crystals and electrical contacts.

Development of the measurement of radium using a germanium detector with molecular recognition resin

High-purity germanium (HPGe) detectors are widely used for the measurement of the low concentrated radioactivities. For the Super-Kamiokande-Gadolinium project, the concentration of radium in Gd$_2$(SO$_4$)$_3{\cdot}$8H$_2$O is determined by using HPGe detectors. The amount of the sample is generally limited by the size of the sample space of a HPGe detector. This leads the limitation of the detector efficiency. A new method of chemical extraction using the molecular recognition resin was developed to minimize this problem. Using the developed method, radium could be extracted from Gd$_2$(SO$_4$)$_3{\cdot}$8H$_2$O and concentrated to smaller amount of the resin at a recovery rate of 81$\pm$4\%, which was estimated by using barium as a recovery monitor. This made it possible to set the sample closer to an HPGe crystal and reduce self screening effect, resulting in increasing the detection efficiency of an HPGe detector. The developed method is reported on this letter.

Electrical conductivity of high-purity germanium crystals at low temperature

The temperature dependence of electrical conductivity of single-crystal and polycrystalline high-purity germanium (HPGe) samples has been investigated in the temperature range from 7 to 100 K. The conductivity versus inverse of temperature curves for three single-crystal samples consist of two distinct temperature ranges: a high-temperature range where the conductivity increases to a maximum with decreasing temperature, and a low-temperature range where the conductivity continues decreasing slowly with decreasing temperature. In contrast, the conductivity versus inverse of temperature curves for three polycrystalline samples, in addition to a high- and a low-temperature range where a similar conductive behavior is shown, have a medium-temperature range where the conductivity decreases dramatically with decreasing temperature. The turning point temperature ( $${T_{\text{m}}}$$ ) which corresponds to the maximum values of the conductivity on the conductivity versus inverse of temperature curves are higher for the polycrystalline samples than for the single-crystal samples. Additionally, the net carrier concentrations of all samples have been calculated based on measured conductivity in the whole measurement temperature range. The calculated results show that the ionized carrier concentration increases with increasing temperature due to thermal excitation, but it reaches saturation around 40 K for the single-crystal samples and 70 K for the polycrystalline samples. All these differences between the single-crystal samples and the polycrystalline samples could be attributed to trapping and scattering effects of the grain boundaries on the charge carriers. The relevant physical models have been proposed to explain these differences in the conductive behaviors between two kinds of samples.