High-power Mode Research Articles

Spatially controllable stimulate Brillouin scattering in the diamond Raman laser

Diamond Raman lasers offer a significant advantage over conventional inversion lasers in achieving high-power single-longitudinal mode (SLM) output, making them highly suitable for various potential applications. However, the presence of stimulated Brillouin scattering (SBS) introduces instability and degrades the SLM mode into a multimode longitudinal mode (MLM) as power scaling increases. In this research article, we present an analytical model that elucidates the transverse-mode behavior of the SBS field within the resonator to explore the mechanism of SBS inhibition. We further investigate the relationship between the cavity ABCD matrix and the transverse mode distribution of the SBS. To validate the model, we design and build laser cavities to observe the SBS beam profile. By utilizing this model, we achieve the controllable TEMmn (m + n ≤ 9) transverse modes of SBS. This model not only acts as a guide for suppressing SBS in diamond Raman lasers, thereby increasing the power limit of SLM output, but also provides a novel approach to attain flexible transverse modes with high power, narrow linewidth, and adjustable wavelength without the need for additional modulation elements.

Dual-module combination with littman crosstalk external cavity for narrow-linewidth blue diode laser

The dense spectral beam combination is vital for achieving high power and brightness output in diode lasers. High-power narrow-linewidth laser modules have been widely studied as the fundamental units. This study presents a dual-module shared external cavity linewidth compression structure with a transmission diffraction grating. With a driving current of 2.4 A and a cooling temperature of 20 °C, the blue diode laser’s external cavity achieved an output power of 49.8 W, a spectral linewidth of 0.321 nm, and a tuning range of 0.817 nm, with an external cavity spectrum locked efficiency of approximately 80.6 %. Additionally, it is observed that crosstalk has a significant influence on the linewidth of the two modules. When one module current locked at 2.4 A and the other increased from 0 A to 2.4 A, the linewidth was reduced from 0.377 nm to 0.321 nm, and linewidth locking was implemented over an output power range from 27 W to 49.8 W. This work reports the highest output power for a blue diode narrow-linewidth external cavity laser.

Functionalized cellulose nanocrystals-MoS2 nanosheets to tailor brick–mortar architecture of green composite for next-generation electronic packaging

Thermally conductive green composites are an attractive solution for addressing the escalating heat generation in miniaturized microelectronic devices. They offer simplicity in processing, cost-effectiveness, and the ability to potentially degrade, making them well-suited for overcoming heat-related challenges in next-generation electronics and 5G communication applications. Here, innovative work focuses on developing heat dissipation films by imitating artificial brick–mortar architecture. This approach incorporates cellulose nanocrystals-molybdenum disulfide (CNC-M) nanosheets as bifunctional fillers in polypropylene carbonate (PPC) via straightforward casting technology. This novel composite system leverages CNC-M nanosheets “brick” as oriented bonding and thermal linkers within the PPC “mortar,” significantly enhancing heat transfer across the film, enabling efficient heat propagation and overall thermal conductivity to 3.1 W·m−1·K−1, which is 4450.7 % higher than that of pure PPC. The superior heat dissipation capability enables these composite films to efficiently cool smartphone CPUs, shells, and high-power LED modules. When applying the composite film containing 8 wt% CNC-M to smartphone CPUs and cell phone shells, temperatures decrease by 17.9 °C and 8.3 °C, respectively. Notably, LED modules experience a significant temperature reduction of 22.6 °C. This distinctive “brick–mortar” architecture creates a homogeneous trapezoidal layered architecture that significantly enhances strong hydrogen bonding interactions within a composite film, resulting in exceptional mechanical properties, aging durability, and shape memory. The composite film with 5 wt% CNC-M exhibited impressive increases in tensile strength and Young’s modulus of 152.6 % and 1322.2 %, respectively. Furthermore, the composite film exhibited enhanced UV resistance and based materials. This study advances high-performance thermal conductive materials for electronics thermal management, paving the way for more efficient and sustainable solutions in electronics.

Nanostructured aramid fiber/Cu/BN composite Janus films with broadband electromagnetic interference shielding and superior thermally conductive/electrically insulating performance

Modern electronic technology necessitates the development of composite materials with effective electromagnetic protection. This work presents a novel strategy constructing an aramid nanofiber (ANF)-based Janus film (ANF@Cu-ANF/BN) using an electroless plating-vacuum assisted filtration-pressing technique. The film exhibits an unique asymmetric property profile, with one side being electrically conductive and thermally conductive/electrically insulating on the other. Exceptional EMI shielding effectiveness of 105.22 and 106.96 dB is obtained in the 8.2–12.4 GHz and 26.5–40 GHz ranges, respectively. In addition, the film demonstrates an impressive out-of-plane thermal conductivity of 2.703 W/(m·K). suggesting superior thermal management capabilities when integrated into heat sinks for high-power light-emitting diode modules. In terms of mechanical robustness, the film possesses a tensile strength of 14.31 MPa. The ANF@Cu-ANF/BN Janus composite films effectively harmonize electromagnetic shielding, thermal conductivity, and mechanical integrity, offering an innovative pathway of developing advanced materials that fulfill the stringent requirements of modern electronic devices.

Investigation of Threshold Voltage Instability and Bipolar Degradation in 3.3 kV Conventional Body Diode and Embedded SBD SiC MOSFET

The 3.3 kV SiC MOSFETs are essential for traction applications, so it is important to investigate the reliability of the recently developed high voltage MOSFETs and power modules as they are believed to be more susceptible to the effects of basal plane dislocations (BPDs). This paper presents measurement results and analysis of bipolar degradation and threshold voltage instability in 3.3 kV SiC MOSFETs having two distinct kinds of integrated diode, conventional body diode and embedded Schottky Barrier Diode (SBD). No bipolar degradation was observed both in MOSFET with conventional body diode and with embedded SBD after accumulated test with 100 hours each of 200%, 400% and 600% rated current stress in the 3rd quadrant of operation. However, the output characteristics show 1% (~0.2 mΩ) and 2% (~0.4 mΩ) increase in on resistance (RDS(on)) and 11% (0.23 V) and 5% (0.1 V) increase in threshold voltage (VTH), respectively, after total bipolar degradation test in the case of the MOSFET with conventional body diode and up to 74 hrs of 600% rated current stress in the case of the MOSFET with embedded SBD at 70°C. A rapid large negative VTH shift was observed in the MOSFETs with embedded SBD after ~ 74 hrs of 600% rated current stress. After accumulated Bias Temperature Instability (BTI) test at 150°C, the VTH value at 25°C has increased by 9.7% (0.14 V) and 14.5% (0.2 V) for the MOSFET with conventional body diode and with embedded SBD, respectively, while RDS(on) increased by 1mΩ at 25°C and by 5mΩ at 150°C, for both types of MOSFETs.

Nonlinear optical response and application of indirect narrow-bandgap SbTe nanosheets

The nonlinear optical properties of antimony telluride (SbTe) crystal with indirect narrow bandgap are investigated, which exhibits superior performance for nonlinear laser modulation in the infrared band. The nonlinear optical coefficients of SbTe nanosheets are determined to be −3.3 cm/GW, −2.3 cm/GW, −1.9 cm/GW and the modulation depths are 5.5 %, 2.0 %, 1.5 % at 400 nm, 800 nm, 1064 nm, respectively. Based on the SbTe-SA, a Yb:GdScO3 laser centered at 1064 nm is achieved with 633 mW maximum output power, 56 fs pulse width and 104 MHz repetition rate. The damage threshold of the SbTe nanosheets is calculated to be exceed 338 GW/cm2, revealing the great potential in high-power laser modulation. This investigation marks the inaugural theoretical and experimental analysis of SbTe’s optical properties and its application in laser modulation, laying the groundwork for future research into indirect narrow-bandgap materials in laser technology.

Thermal optimization design of high-power charging station charging module

Abstract When facing significant heat generation from a 30 kW high-power charging station, traditional air-cooling forced convection methods are insufficient to meet the cooling requirements. In this study, based on an in-depth analysis of power modules, we designed a key component of the liquid cooling system, the cold plate, through theoretical calculations. Using simulation techniques, we analyzed the temperature distribution within the cold plate and performed design optimization under conditions of a 4C charging rate and a thermal load of 1598 W. Considering the actual operating environment of the charging equipment, we selected a 50% volume fraction of ethylene glycol-water solution as the coolant and simulated its performance under extreme outdoor conditions of 50°C. Simulation results showed that the optimized liquid-cooled cold plate module achieved a junction temperature of 69.73°C, significantly lower compared to the initial temperature of 109.9°C, resulting in an approximately 36% improvement in heat dissipation efficiency. This significant enhancement not only highlights the advantages of the liquid cooling system in managing the thermal load of high-power charging stations but also addresses the issue of excessive heat load faced by traditional cooling methods. The outcomes of this research provide important theoretical and practical foundations for the thermal design of charging equipment, which is expected to play a critical role in improving the performance and reliability of charging stations.

Production of High-Power Nitrogen Sputtering Plasma for TiN Film Preparation

High-density nitrogen plasma was produced using a high-power pulsed power modulator to sputter titanium targets for the preparation of titanium nitride film. The high-power pulsed sputtering discharge unit consisted of two targets facing each other with the same electrical potential. The titanium target plates were used as target materials with dimensions of 60 mm length, 20 mm height, and 5 mm thickness. The gap length was set to be 10 mm. The magnetic field was created with a permanent magnet array behind the targets. The magnetic field strength at the gap between the target plates was 70 mT. The electrons were trapped by the magnetic and electric fields to enhance the ionization in the gap. The nitrogen and argon gases were injected into the chamber with 4 Pa gas pressure. The applied voltage to the target plates had an amplitude from −600 V to −1000 V with 600 μs in pulse width. The target current was approximately 10 A with the consumed power of 13 kW. The discharge sustaining voltage was almost constant and independent of the applied voltage, in the same manner as the conventional normal glow discharge. The ion density and electron temperature at the surface of the ionization region were obtained as 1.7 × 1019 m−3 and 3.4 eV, respectively, by the double probe measurements. The vertical distribution of ion density and electron temperature ranged from 1.1 × 1017 m−3 (at 6 cm from the target edge) to 1.7 × 1019 m−3 and from 2.4 eV (at 6 cm from the target edge) to 3.4 eV, respectively. From the emission spectra, the intensities of titanium atoms (Ti I), titanium ions (Ti II), and nitrogen ions (N2+) increased with increasing input power. However, the intensities ratio of Ti II to Ti I was not affected by the intensities from N2+.

High Current Density Power Modules Mitigate the Environmental Impact of Power-Intensive GenAI

High Current Density Power Modules Mitigate the Environmental Impact of Power-Intensive GenAI

Application of high-power ablation mode in patients with idiopathic ventricular extrasystole

Background. A new method of high-power short-duration ablation (HPSDA) with high impact energy, ranging from 60 to 90 W, is becoming widespread in the world. However, the number of studies on the use of HPSDA in patients with idiopathic ventricular arrhythmias (IVA) is limited. It is relevant to study the feasibility of using HPSDA to improve the outcomes of radiofrequency ablation (RFA) in patients with IVA. The aim of the study: to evaluate the immediate results of HPSDA in RFA for IVA and to compare it with the classic ablation mode. Materials and methods. We have retrospectively analyzed the results of RFA in 54 patients with symptomatic IVA. Their average age was 45.0 ± 11.7 years. The majority were men (72.3 %). Given the possible effect of intracardiac mapping on the results of ablation, the patients were divided into two groups. Group I include 27 (50 %) participants in whom mapping was performed using 3D navigation. Group II include 27 (50 %) patients in whom 3D navigation was not used. The decision to use HPSDA or classic ablation was made empirically, without considering any factors or characteristics of a patient. The following ablation parameters were used during HPSDA: temperature 45 °C, exposure time 7 seconds, energy 70 W. Results. In group I, where 3D navigation was used to localize the substrate, HPSDA was performed in 12 patients (44.4 %), and the classic mode was used in 15 cases (55.6 %). With conventional mapping, HPSDA was applied in 10 (37.0 %) patients, and the classic mode in 17 (63.0 %). Сlassic ablation allowed to achieve complete arrhythmia suppression in all patients, regardless of the mapping method. When using only HPSDA, the disappearance of arrhythmia was observed only in 45.5 % of cases. With the use of the classic mode, recurrence of IVA during the control time was observed in 16.6 % of patients, while with the use HPSDA in 33.3 %. Conclusions. The high-power regimen demonstrated significantly lower efficacy for permanent suppression of IVA compared to classic ablation methods (p = 0.007). The use of HPSDA to suppress IVA is associated with a high risk of arrhythmia recurrence during control time (p = 0.0010). It is advisable to convert the ablation mode for complete suppression of arrhythmia when the HPSDA is ineffective.

108 fs high-power mode locked double-clad ytterbium-doped fiber laser using FePS3 saturable absorber

108 fs high-power mode locked double-clad ytterbium-doped fiber laser using FePS3 saturable absorber

Concepts for realizing High-Voltage Power Modules by Embedding of SiC Semiconductors

Today’s power electronics modules typically consist of a ceramics substrate (DBC – Direct Bond Copper), carrying IGBTs, diodes or MOSFETs. These semiconductors are soldered or sintered to the ceramics and their top sides are interconnected by thick Al wires. An integration of further components or functions on the DBC substrate is difficult or even not possible. Therefore, driver circuits and controllers have to be mounted to a separate substrate, typically an organic Printed Circuit board (PCB). The PCB has to be connected to the DBC by wires or pins. The mechanical integration of the whole system requires a bulky housing. Embedding of power semiconductors like SiC MOSFET allows a significant size reduction, improved electrical performance and a high degree of reliability of such modules. In the last years, the capability of PCB embedding technology for the realization of low and high voltage power modules was demonstrated. Fraunhofer IZM together with partners from the industry demonstrated the feasibility for different applications, from single die SiC packages to high voltage automotive traction inverters. In this paper, a general overview about innovative power module technologies will be given and the embedding of power semiconductors will be introduced in detail. It will address all most relevant point, like the demands on the semiconductor, the thermal and electrical considerations as well as the demands on the used materials. To address the integration of the required driver circuits and controllers, the idea of modularization such electronics systems will also be presented. Here already packaged components will be used and embedded into PCB layers too. As a result, a modular approach to form a complete system will be developed. Different functional layers, e.g. power switches, logic modules, will be formed and finally stacked und connected to form the system. The concept and first realized demonstrators will be discussed.

The conceptual design of the high-efficiency 400 kW solid-state power station at 352 MHz for the European spallation source

Abstract This paper introduces an innovative conceptual design of a 400 kW solid-state power amplifier (SSPA) station and presents preliminary measurements for the key components. Recent advancements and benefits of solid-state technology have made the prospect of replacing vacuum tubes increasingly appealing. Historically, a significant challenge was the limited output power capacity of individual solid-state transistors, necessitating the integration of numerous units to generate high-power microwave signals in the range of hundreds of kilowatts. However, modern transistors capable of producing over 2 kW of output power have emerged, facilitating this transition. Another weak point was low power efficiency in high-power operating mode. The advanced rugged technology (ART) of solid-state devices enables the utilization of these transistors in nonlinear and switching operating classes, thereby enabling the creation of high-efficiency high-power amplifiers. In this conceptual design, 264 SSPA modules based on ART, each with a power output of 1.6 kW, are combined. The measurements revealed a single SSPA capable of delivering up to 2 kW output power with a power efficiency of 73% at frequency of 352 MHz. Due to the minimal losses during module combination and working SSPA in Class-C operation mode, the power efficiency of the station is expected to closely mirror that of a single module.

An Enhanced Electro-Thermal Coupled Model With Lithium Plating Detection for Lithium-Ion Battery at Low Temperatures

Lithium plating may occur when lithium-ion batteries are charged at a high current rate and low ambient temperature. As a result, the battery degradation is accelerated and the risk of thermal runaway is increased. Along these lines, an enhanced electro-thermal model was proposed in this work for charging at low temperature values. By considering the battery with a reference electrode, a dual RC model was built. The developed model can predict the anode potential to prevent the lithium plating. The thermal model and absolute state of charge (SOC) were integrated into the battery model to solve the SOC inconsistency caused by the battery temperature rise during the charging process. Then, the proposed electro-thermal model was used to predict the electrical and thermal characteristics of a 50 Ah battery under various charging rates and low ambient temperature values conditions. In addition, the prediction results were validated by the experiment data. The maximum errors of the cathode potential and battery terminal voltage were 0.058 V and 0.154 V, respectively, whereas the maximum cell temperature error was 0.88 °C. Based on the anode prediction electro-thermal coupling model, a segmented heating strategy without lithium plating was proposed to describe the fast battery charging procedure, which can reduce energy consumption by 16.1% and save charging time by nearly 10 minutes compared with the continuous high-power heating mode.

High-beam-quality low-resistance vertical-cavity surface-emitting laser array with graphene electrode.

Thermal crosstalk and current crowding effects are pressing issues that significantly impact the beam quality and efficiency of vertical-cavity surface-emitting laser (VCSEL) arrays. In this paper, by taking advantage of the excellent current transmission characteristics of graphene, what we believe to be a novel VCSEL array based on graphene electrode is designed to realize vertical current injections. The series resistance and self-heating of arrays are reduced by controlling the transport direction of the current, effectively suppressing the thermal crosstalk effect. Furthermore, high array beam quality is obtained by optimizing the current density distribution in active regions. Ultimately, the high-power quasi-single mode emission of VCSEL arrays is achieved by introducing graphene electrodes (Gr-VCSEL array) designs. Compared to traditional VCSEL arrays, the 10 × 10 Gr-VCSEL array demonstrates a 41% reduction in series resistance, a side mode suppression ratio of 32 dB, and a divergence angle around 12 °. This structure simultaneously achieves quasi-single mode emission and effectively suppresses the thermal crosstalk effect, providing a new method for the development of high-beam quality VCSEL arrays.

Study of high-power breakdown accompanied by sliding discharge mode in a three-dimensional sliding arc plasma igniter

In order to improve the ignition reliability of a small-thrust rocket engine, a three-dimensional sliding arc igniter discharge characteristic research experimental system was constructed. The work gas flow rate and excitation parameters were changed, the plasma discharge characteristic and spectral characteristic parameters were measured, and the characteristics of the igniter discharge modes were investigated. The influence of the excitation parameters on the discharge modes was explored, and the effect of the discharge modes on the ignition performance of the igniter was analyzed as well as the mechanism of the discharge modes. The results show that the igniter has three different discharge modes during the discharge process, i.e., breakdown with sliding mode, high-power breakdown with sliding mode, and the transition state between the two modes, the shift of the discharge mode is mainly affected by the excitation power, and the igniter is in the breakdown with sliding mode when the excitation power is low, and in the high-power breakdown with sliding mode when the power is high. High-power breakdown with sliding mode has both breakdown with sliding and stable sliding characteristics in the early stage of the sliding arc movement for the breakdown with sliding and then transformed into sliding. Compared with the breakdown with sliding mode and high-power mode, the sliding arc discharge area is wider, the concentration of O * than the breakdown with sliding mode increased by 2.86 times, the electron temperature increased by 31.76%, and it can significantly improve plasma ignition effect, reduce the activation energy and enhance the performance of the igniter.

A Dual-Mode CMOS Power Amplifier with an External Power Amplifier Driver Using 40 nm CMOS for Narrowband Internet-of-Things Applications

The narrowband Internet-of-Things (NB-IoT) has been developed to provide low-power, wide-area IoT applications. The efficiency of a power amplifier (PA) in a transmitter is crucial for a longer battery lifetime, satisfying the requirements for output power and linearity. In addition, the design of an internal complementary metal-oxide semiconductor (CMOS) PA is typically required when considering commercial applications to include the operation of an optional external PA. This paper presents a dual-mode CMOS PA with an external PA driver for NB-IoT applications. The proposed PA supports an external PA mode without degrading the performances of output power, linearity, and stability. In the operation of an external PA mode, the PA provides a sufficient gain to drive an external PA. A parallel-combined transistor method is adopted for a dual-mode operation and a third-order intermodulation distortion (IMD3) cancellation. The proposed CMOS PA with an external PA driver was implemented using 40 nm-CMOS technology. The PA achieves a gain of 20.4 dB, a saturated output power of 28.8 dBm, and a power-added efficiency (PAE) of 57.8% in high-power (HP) mode at 920 MHz. With an NB-IoT signal (200 kHz π/4-differential quadrature phase shift keying (DQPSK)), the proposed PA achieves 24.2 dBm output power (Pout) with a 31.0% PAE, while satisfying −45 dBc adjacent channel leakage ratio (ACLR). More than 80% of the current consumption at 12 dBm Pout could be saved compared to that in HP mode when the proposed PA operates in low-power (LP) mode. The implemented dual-mode CMOS PA provides high linear output power with high efficiency, while supporting an external PA mode. The proposed PA is a good candidate for NB-IoT applications.

Annealing Temperature Effect on the Physical Properties of NiO Thin Films Grown by DC Magnetron Sputtering

AbstractNickel oxide is a promising material for transparent electronics applications. This semiconductor demonstrates the possibility of modifying its physical properties depending on the method of growth and subsequent processing. Here the effects of the discharge power are reported during reactive dc magnetron sputtering, as well as the modes of subsequent annealing of NiO films, on their structural, electrical, and optical properties. NiO films are annealed at various temperatures both in an oxygen‐containing environment and under vacuum conditions. Deposited NiO films have a polycrystalline structure with a preferred orientation (200) for the low discharge power mode and (111) for the high discharge power mode. However, obtained NiO films exhibit crystallinity improvement after annealing. The presence of both Ni2+ and Ni3+ oxidation states in the deposited films is found. In addition, it is shown that the relative carrier concentration (Ni3+/Ni2+ peak area ratio) can be controlled by choosing the NiO film preparation mode. The trend in this ratio corresponds to the trend in film conductivity and the number of free‐charge carriers. The deposited films are semitransparent, and the estimated optical bandgap of NiO is in the range from 3.50 to 3.74 eV.

Investigation on the battery thermal management and thermal safety of battery-powered ship with flame-retardant composite phase change materials

Pure battery-powered ships have attracted much attention because of its unique advantages of zero-emission. However, the problems of adaptability to extreme working conditions and thermal safety risks restrict the development of battery-powered ships. In this study, a novel flexible flame-retardant composite phase change materials (CPCM) with paraffin (PA)/EVA grafted on maleic anhydride (EVA-g-MAH)/expanded graphite (EG)/ammonium polyphosphate (APP)/triphenyl phosphate (TPP)/Na2SiO3 has been proposed and utilized in battery module. Among them, the sample ATPCM2 with APP/TPP/Na2SiO3 ratio of 5/10/10 achieved the optimal thermal properties and flame-retardant effect. The designed multifunctional CPCM harmonizes the competition between flame retardancy, mechanical properties and phase change latent heat by the synergistic effect. Besides, the ATPCM2-Module shows a good temperature control performance during charge-discharge cycles, such as the maximum temperature of battery module can be still controlled below 50 °C at 2C discharge rate and the corresponding temperature difference was effectively maintained within 4.1 °C. This is owing to the constructed stable three-dimensional heat conductive skeleton formed by synergistic flame retardancy effect, which could improve the dissipation heat capacity and thermal safety. With these prominent performances, the designed flexible CPCM with desired flame-retardant and thermal management performance can provide insights into the passive thermal management and thermal safety improvement of both battery-powered ships and high-power battery module under extreme conditions.

A High Performance GaN Power Module with Parallel Packaging for High Current and Low Voltage Traction Inverter Applications

A High Performance GaN Power Module with Parallel Packaging for High Current and Low Voltage Traction Inverter Applications