We present experimental work on laser plasma based X-ray lithography, which is aimed at the development of a compact lithographic work-station for VLSI pattern transfer. Results presented are obtained with the frequency doubled output of a low repetition rate, high power Nd:YAG/Glass laser. The power density in the laser focus was 3×10 12 W/cm 2. This source was used to image Si X-ray masks with submicron Au absorber profiles. Experimental X-ray photoresist, RAY-PF (Hoechst), was used to record the structures and analysed for imaging and recording properties. For the exposure, 80 lasershots sufficed to faithfully reproduce 0.5 μm mask structures onto the photoresist, which is equivalent to a sensitivity of better than 50 mJ/cm 2. It is possible to predict source improvements, obtainable with a high power excimer laser for this application. The higher repetition rate at which excimer lasers can be operated reduces the exposure time of the photoresist to several seconds, enabling an industrial throughput of 27 6″-wafers/hour in one work-station.
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