High Power Applications Research Articles

Design and implementation of single DC-link based three-phase multilevel inverter with CB-PWM techniques

Simulation and implementation of a single DC-link-based three-phase inverter are investigated in this article. The primary focus is on designing a single DC-link three-phase inverter for high power applications. Unlike conventional inverters that require 600 V to generate 400 V (RMS) at the output, the proposed system achieves this with only 330 V, facilitated by a 12-terminal 1:1 transformer. The system employs Proportional Integral (PI) and Neural Network (NN) controllers to optimize performance. Various Carrier-Based Pulse Width Modulation (CB-PWM) techniques, including Phase Disposition (PD), Phase Opposition Disposition (POD), and Alternative Phase Opposition Disposition (APOD), are implemented and evaluated based on Total Harmonics Distortion (THD) concerning the Modulation Index (MI) of the inverter. The proposed inverter achieves a THD reduction to 4.8%, demonstrating superior performance compared to recent studies. The system’s performance is validated through extensive MATLAB/Simulink simulations and practical implementation using XILINX FPGA software, confirming the efficacy of the proposed design.

A robust polyaniline hydrogel electrode enables superior rate capability at ultrahigh mass loadings

Simultaneously achieving high mass loading and superior rate capability in electrodes is challenging due to their often mutually constrained nature, especially for pseudocapacitors for high-power density applications. Here, we report a robust porous polyaniline hydrogel (PPH) prepared using a facile ice-templated in situ polymerization approach. Owing to the conductive, robust, and porous nanostructures suitable for ultrafast electron and ion transport, the self-supporting pure polyaniline hydrogel electrode exhibits superior areal capacitance without sacrificing rate capability and gravimetric capacitance at an ultrahigh mass loading and notable current density. It achieves a high areal capacitance (15.2 F·cm−2 at 500 mA·cm−2) and excellent rate capability (~92.7% retention from 20 to 500 mA·cm−2) with an ultrahigh mass loading of 43.2 mg cm−2. Our polyaniline hydrogel highlights the potential of designing porous nanostructures to boost the performance of electrode materials and inspires the development of other ultrafast pseudocapacitive electrodes with ultrahigh loadings and fast charge/discharge capabilities.

High-performance negative differential resistance characteristics in homoepitaxial AlN/GaN double-barrier resonant tunneling diodes

In this work, high-performance negative differential resistance (NDR) characteristics are demonstrated in homoepitaxial AlN/GaN double-barrier resonant tunneling diodes (RTDs). The devices are grown by plasma-assisted MBE on bulk GaN substrates and exhibit robust and repeatable NDR at RT. A high peak current density of 183 kA cm−2 is simultaneously demonstrated with a large peak-to-valley current ratio of 2.07, mainly benefiting from the significantly reduced dislocation density and improved hyper-abrupt heterointerfaces in the active region, which boosts the electron quantum transport in the resonant tunneling cavity. The achievement shows the promising potential to enhance the oscillation frequency and output power of GaN-based RTD oscillators, imperative for next-generation high-power solid-state compact terahertz oscillators application.

Optical properties of Ce: GdYAG phosphor in glass with high quality LAS glass system and its application in laser illumination

Nowdays, the demand for high-power laser lighting applications is on the rise, however, phosphor in glass (PiG) prepared using conventional glass systems often experience damage under intense laser irradiation. To tackle this issue, we introduce a novel LAS glass system for phosphor encapsulation to create PiG, and by utilizing a spray coating technique, we blend PiG with high thermal conductivity sapphire to obtain phosphor in glass film (PiF), effectively improving laser irradiation resilience and optical characteristics. In this study, a novel LAS glass system (SiO2–Li2CO3–MgO–Al2O3–CaO–P2O5–K2O–ZrO2–Na2O) was utilized to encapsulate Ce:GdYAG phosphors to prepare a series of PiG and PiF. The glass system exhibits multi-directional interlocking lithium disilicate crystals, significantly enhancing the glass's strength and fracture toughness. There is no apparent interface reaction between the glass system and the phosphors, indicating effective protection of the phosphor particles. The PiF sample demonstrates a minor decrease of 5.2 % in internal quantum efficiency compared to the original phosphor, while boasting a high thermal conductivity of 7.4 W m−1 K−1. Notably, the optimized PiF shows remarkable enhancements with a saturation threshold of 4.37 W mm−2, surpassing PiG (1.668 W mm−2), and achieving LFmax of 424.41 lm and LEmax of 147.16 lm W−1. It features a high color rendering index (CRI) of 68.7 and low color correlated temperature (CCT) of 3646 K, significantly improving laser irradiation resistance and optical quality, making it a promising warm yellow laser illumination converter for diverse lighting applications.

Exploring the process-microstructure-thermal properties relationship of resin-reinforced Ag sintering material for high-power applications via 3D FIB-SEM nanotomography

Resin-reinforced Ag sintering materials represent a promising solution for die-attach applications in high-power devices requiring enhanced reliability and heat dissipation. However, the presence of resin and intricate microstructure poses challenges to its thermal performance, and improvement strategies remain unclear. This work utilizes 3D FIB-SEM nanotomography to reconstruct the microstructure of this material under various process conditions. The analysis reveals that, even with an Ag volume fraction as low as 47.3%, Ag particles form a robust 3D network. Geometric tortuosity quantifies the effect of different sintering conditions on the Ag particle network in all spatial directions. Effective thermal conductivity is simulated based on realistic microstructure models. Results show a significant negative correlation between tortuosity and effective thermal conductivity. Increasing sintering temperature in Model B notably reduces tortuosity and enhances effective thermal conductivity. Sensitivity analysis underscores the dominant role of Ag volume fraction in regulating effective thermal conductivity. Finally, transient thermal impedance measurement of this material as a thin die-attach layer in actual high-power devices demonstrated its application potential. This article strives to explore the relationship between process, microstructure, and thermal properties of this material to provide a reference for further development.

Polyphenol-Derived Carbonaceous Frameworks with Multiscale Porosity for High-Power Electrochemical Applications.

With the escalating global demand for electric vehicles and sustainable energy solutions, increasing focus is placed on developing electrochemical systems that offer fast charging and high-power output, primarily governed by mass transport. Accordingly, porous carbons have emerged as highly promising electrochemically active or supporting materials due to expansive surface areas, tunable pore structures, and superior electrical conductivity, accelerating surface reaction. Yet, while substantial research has been devoted to crafting various porous carbons to increase specific surface areas, the optimal utilization of the surfaces remains underexplored. This review emphasizes the critical role of the fluid dynamics within multiscale porous carbonaceous electrodes, leading to substantially enhanced pore utilization in electrochemical systems. It elaborates on strategies of using sacrificial templates for incorporating meso/macropores into microporous carbon matrix, while exploiting the unique properties of polyphenol moieties such as sustainable carbons derived from biomass, inherent adhesive/cohesive interactions with template materials, and facile complexation capabilities with diverse materials, thereby enabling adaptive structural modulations. Furthermore, it explores how multiscale pore configurations influence pore-utilization efficiency, demonstrating advantages of incorporating multiscale pores. Finally, synergistic impact on the high-power electrochemical systems is examined, attributed to improved fluid-dynamic behavior within the carbonaceous frameworks, providing insights for advancing next-generation high-power electrochemical applications.

A gap waveguide-based mechanically reconfigurable phase shifter for high-power Ku-band applications

This paper presents a novel design of a low-loss, reconfigurable broadband phase shifter based on groove gap waveguide (GGW) technology. The proposed phase shifter consists of a folded GGW and three bends with a few pins forming the GGW and one bend attached to a movable plate. This movable plate allows for adjustments to the folded waveguide length, consequently altering the phase of electromagnetic waves. The advantage of GGW technology is that it does not require electrical contact between different parts of a structure. Therefore, it enables the moving parts to slide freely without electromagnetic energy leakage, resulting in improved insertion loss in high-power applications. In addition, in the proposed design, the position of the input and output waveguide ports of the phase shifter remains fixed, which is advantageous from a practical point of view. As shown by measurement and simulation results, there is nearly 37% impedance bandwidth with the highest insertion loss of 0.6 dB, and the developed device has a maximum phase shift of 770° at the center frequency of 13 GHz. The phase shifter can be used for various radar and satellite applications that require phase control, such as beamforming networks and phased array antennas.

An advanced fabrication method for Yb3+-Doped optical fibers featuring AlPO4 core glass

Ytterbium (Yb)-doped fibers using aluminophosphosilicate (Yb-APS) host glass offer significant advantages over conventional aluminosilicate (Yb-AS) fibers, such as strong photodarkening resistance, higher RE-ion solubility and lower Numerical Aperture (NA), making them ideal for high-power laser applications. However, achieving optimal performance in Yb-APS fiber fabrication poses various challenges, including maintaining a precise Al3+/P5+ ratio (1:1), minimizing the central dip in the refractive index profile (RIP), ensuring proper dopant distribution, and reducing background loss. We introduce a new fabrication method for Yb-APS fiber to address these challenges. This approach entails first synthesizing amorphous Yb³⁺: AlPO4 particles, then incorporating them into the fiber core using a hybrid technique that merges Vapor Phase Delivery (VPD) with solution doping (SD). We extensively utilized various materials and optical characterizations, including XRD, FTIR, Raman spectroscopy, FESEM, and XPS, to fine-tune the composition of Yb³⁺: AlPO4. The optical characterization of the developed preform sample, including absorption, emission, and luminescent lifetime measurements, was conducted to assess the fabrication technique's suitability. The results confirmed the successful incorporation of Yb-ions into the preform core, with peaks consistent with reported values. The fiber's attenuation loss was measured, showing approximately 10 dB/km at 1200 nm. This indicates that the particles dissolved smoothly during preform and fiber processing, resulting in minimal scattering loss in the fiber core. The developed fiber demonstrated NA of 0.1, uniform RIP along the preform length with significant reduction of the central dip formation and improved spectral performance (∼1.7X broader bandwidth) compared with an equivalent Yb-AS fiber. These findings suggest the Yb-APS fiber's overall effectiveness and structural robustness, highlighting the potential of the proposed fabrication method for high-power fiber laser applications.

Modeling of Nanomaterials for Supercapacitors: Beyond Carbon Electrodes.

Capacitive storage devices allow for fast charge and discharge cycles, making them the perfect complements to batteries for high power applications. Many materials display interesting capacitive properties when they are put in contact with ionic solutions despite their very different structures and (surface) reactivity. Among them, nanocarbons are the most important for practical applications, but many nanomaterials have recently emerged, such as conductive metal-organic frameworks, 2D materials, and a wide variety of metal oxides. These heterogeneous and complex electrode materials are difficult to model with conventional approaches. However, the development of computational methods, the incorporation of machine learning techniques, and the increasing power in high performance computing now allow us to tackle these types of systems. In this Review, we summarize the current efforts in this direction. We show that depending on the nature of the materials and of the charging mechanisms, different methods, or combinations of them, can provide desirable atomic-scale insight on the interactions at play. We mainly focus on two important aspects: (i) the study of ion adsorption in complex nanoporous materials, which require the extension of constant potential molecular dynamics to multicomponent systems, and (ii) the characterization of Faradaic processes in pseudocapacitors, that involves the use of electronic structure-based methods. We also discuss how recently developed simulation methods will allow bridges to be made between double-layer capacitors and pseudocapacitors for future high power electricity storage devices.

In-situ compression tests and analysis of strength-ductility synergy in heterogeneous structured copper-tin composite joint

Copper-tin (Cu–Sn) serves as a prevalent alloy system in electronic packaging, envisioned for future high-power device applications. However, interdiffusion in Cu–Sn yields rigid and brittle Cu6Sn5 and Cu3Sn phases, causing joint hardening and embrittlement. This paper introduces a novel, non-homogeneous Cu–Sn composite employing heterostructure design. Through room temperature in-situ compression tests and molecular dynamics (MD) simulations, we investigate mechanical property degradation origins and Cu–Sn composite strength-ductility mechanisms. Our findings reveal hierarchical heterostructures in joints stimulate dynamic stress distribution at interfaces, generating a high density of geometrically necessary dislocations (GNDs). This enhances the material's work-hardening rate and imparts robust strain-hardening capabilities. This unique structural feature has altered the interaction between dislocations and interfaces, thereby effectively promoting the formation and driving force of dislocations. The combined effects of strain inhomogeneity induced by soft and hard phases, along with a hybrid mechanism involving stacking faults (SFs), Lomer-Cottrell (L-C) locking, and dislocation bypassing and shearing, realize exceptional strength-ductility synergies in Cu–Sn composite joints. This study presents a promising paradigm for designing microstructures in high-strength, deformable, and high-temperature-resistant soldered composites.

Machine-learning based control of bi-modular multilevel PWM inverter for high power applications.

This paper presents the topology and machine learning-based intelligent control of high-power PV inverter for maximum power extraction and optimal energy utilization. Modular converters with reduced components economic and reliable for high power applications. The proposed integrated intelligent machine learning based control delivers power conversion control with maximum power extraction and supervisory control for optimal load demand control. The topology of the inverter, operating modes, power control and supervisory control aspects are presented. Simulation is carried out in MATLAB/SIMULINK to verify the feasibility of the proposed inverter and control algorithm. The experimental study is presented to validate the simulation results. The operational performance of the proposed topology is evaluated in terms of operational parameters such as regulation of output power, and load relay control and is compared to existing topologies. The economic performance is also evaluated in terms of power switch sizing and reliability in power delivery concerning switch or power sources failure.

Simultaneous improvements in energy density and thermal conductivity of PAN polymer nanocomposites enabled by core-shell structure BZCT@BNNS nanofibers

If the heat generated by electronic devices in high-power applications cannot be dissipated in a timely manner, it will not only affect the use of the equipment but also reduce its service life. Therefore, there is an urgent need to develop thin films of dielectric nanocomposites with high thermal conductivity, high energy storage, and excellent flexibility and electrical insulation performance. In this study, we reported the successful preparation of BZCT nanofibers (BZCT NFs) and core-shell structures BZCT@BNNS nanofibers using electrospinning and coaxial electrospinning techniques, respectively, and there were used to composite with polyacrylonitrile (PAN) polymer matrix to prepare BZCT NFs/PAN and BZCT@BNNS/PAN dielectric nanocomposites thin film. Research has found that when the shell thickness of BNNS is 15 nm and BZCT@BNNS (15 nm) volume fraction is 20 vol%, the comprehensive performance of the dielectric nanocomposites is the best, with thermal conductivity and energy storage performance of 3.36 W m−1K−1 and 12.23 J/cm3, respectively. Therefore, the nanocomposites thin film can be used as a potential high-performance dielectric material for thermal management applications in high-power density electronic devices.

Optimizing TCAD Model and Temperature-Dependent Analysis of Pt/AlN Schottky Barrier Diodes for High-Power and High-Temperature Applications

This research presents a comprehensive investigation and optimization of the Pt/AlN Schottky Barrier diode (SBD) using technology computer-aided design (TCAD) modeling. The study explores the electrical characteristics of AlN SBDs with various metal contacts, including Aluminum (Al), Silver (Ag), Tungsten (W), Gold (Au), Nickel (Ni), and Platinum (Pt). Through the comparative analyses of different metal/AlN Schottky contacts, the Pt/AlN structure emerges as the most promising due to its superior barrier height and lower leakage current. At [Formula: see text]K, the diode demonstrates a barrier height of 2.72[Formula: see text]V, a nearly ideal leakage current of 0.046[Formula: see text]pA, and a breakdown voltage of 363[Formula: see text]V. The research extends to examining the temperature-dependent electrical behavior of Pt/AlN Schottky diodes, particularly for high-power and high-temperature applications. Analysis carried out across temperatures ranging from [Formula: see text]K to [Formula: see text]K reveals a trend of increasing ON resistance and consistently lower leakage current with rising temperature. Importantly, the study indicates that the impact of temperature on the barrier height and breakdown voltage of the diode is negligible, thus rendering it suitable for high-temperature operation. Leveraging the unique properties of AlN as an ultra-wide bandgap material within the III-V compound semiconductor family, this research provides valuable insights into the potential applications of Pt/AlN Schottky contact. The study highlights that the Pt/AlN Schottky contact is effective not only for high-power, high-temperature SBDs but also as superior metal/semiconductor gate contacts for field-effect transistors (FETs). Their suitability is attributed to their ability to handle high voltages, minimize reverse leakage current, and demonstrate improved thermal stability.

Wavelength-tolerant generation of Bessel-Gaussian beams using vortex phase plates

With their nearly non-diffracting and self-healing nature, Bessel-Gaussian beams (BGBs) are attractive for many applications ranging from free-space communications to nonlinear optics. BGBs can successfully be generated on background laser beams by imprinting and subsequently annihilating multiply charged optical vortices followed by focusing the resulting ring-shaped beam with a thin lens. For high-power applications optical vortices are preferentially created by spiral phase plates because of their high damage threshold. These are fabricated to realize an azimuthal change of the accumulated phase of a multiple of 2π at a predetermined wavelength. This raises the expectation that the use of spiral phase plates for the generation of BGBs is limited to the design wavelength and therefore not applicable to broadband applications involving short-pulse lasers. In this paper we present experimental data showing that this limitation can be overcome in a broad spectral range around the design wavelength. Experimental cross-sections of the BGBs for several off-design wavelengths are found in a good quantitative agreement with the theoretical Bessel functions at distances up to 540 cm after the focus of the lens.

Cold Gas Spraying Copper Metal On AlN Ceramics as an Alternative to Thick DBC Substrates for Power Electronics

Abstract This study investigates the use of cold gas spraying (CGS) as a low-temperature additive manufacturing method to bond copper onto aluminum nitride (AlN) substrates for electronic packaging of high-power applications. While direct bond copper (DBC) technique is commonly used, it has limitations due to the large mismatch in coefficient of thermal expansion, which affects substrate reliability. This work employed cold gas spraying (CGS) to mechanically bond Cu on AlN. The study explores the effect of multiple sprays, spray angle and spraying direction on deposition thickness, coating surface roughness, and deposited volume through a factorial design of experiments (DOE). The results, based on optical and scanning electron microscopy combined with profilometry data, showed that coatings sprayed at a 60° angle had a smoother profile topography and less surface roughness than those sprayed at a 90° angle. After depositing 10 layers, a surface roughness (Sa) of around 30 µm and a coating thickness of over 300 µm were successfully attained. These findings provide valuable insights into the processing factors affecting the growth and quality of copper coatings on AlN substrates via multiple sprays, thus enabling the realization of CGS technology as a potential solution to DBC substrates for electronic packaging of wide-bandgap semiconductors.

The Dynamic Modulation Doping Effect of Gas Molecules on an AlGaN/GaN Heterojunction Surface.

AlGaN/GaN high-electron-mobility transistors (HEMTs) are widely used in high-frequency and high-power applications owing to the high two-dimensional electron gas (2DEG) concentration. However, the microscopic origin of the 2DEG remains unclear. This hinders the development of device fabrication technologies, such as threshold voltage modulation, current collapse suppression, and 2DEG concentration enhancement technologies, as well as AlGaN/GaN sensors with very high sensitivity to polar liquids. To clarify the 2DEG microscopic origin, we studied the effects of gas molecules on AlGaN/GaN surfaces through various experiments and first-principles calculations. The results indicated that the adsorption of gas molecules on the AlGaN/GaN surface is an important phenomenon, clarifying the microscopic origin of the 2DEG. This study elucidates the properties of AlGaN/GaN heterojunctions and promotes the development of new fabrication technologies for AlGaN/GaN devices.

Wafer-scale bonded GaN–AlN with high interface thermal conductance

Wide and ultrawide bandgap semiconductors, such as GaN, play a crucial role in high-power applications, yet their performance is often constrained by thermal management challenges. In this work, we introduce a high-quality interface between GaN and AlN, prepared through wafer-scale bonding and verified via high-resolution transmission electron microscopy and transport experiments. We experimentally measured the thermal boundary conductance of the GaN–AlN interface, achieving up to 320 MW/m2K at room temperature using an ultrafast optical technique and sensitivity examinations. Non-equilibrium atomistic Green's functions and density functional theory simulations were conducted to model the interface phonon modes and their contributions to thermal transport, demonstrating good agreement with the experimental results from 80 to 300 K. Additionally, we observed a size-dependent effect on the thermal boundary conductance related to the GaN film thickness from 180 to 450 nm, which we attributed to quasi-ballistic thermal transport through molecular dynamics simulations. Our study has demonstrated a scalable processing route for wafer-sized chip packaging and provides fundamental insights to mitigate near-junction thermal resistance. Further exploration of interface engineering could facilitate co-design strategies to advanced thermal management technologies.

A novel mathematical approach for modeling the dielectric response surface of the transformer oil to predict the optimized functions of transformers in high-power applications

A novel mathematical approach for modeling the dielectric response surface of the transformer oil to predict the optimized functions of transformers in high-power applications

A Review of Diamond Materials and Applications in Power Semiconductor Devices.

Diamond is known as the ultimate semiconductor material for electric devices with excellent properties such as an ultra-wide bandgap (5.47 eV), high carrier mobility (electron mobility 4000 cm2/V·s, hole mobility 3800 cm2/V·s), high critical breakdown electric field (20 MV/cm), and high thermal conductivity (22 W/cm·K), showing good prospects in high-power applications. The lack of n-type diamonds limits the development of bipolar devices; most of the research focuses on p-type Schottky barrier diodes (SBDs) and unipolar field-effect transistors (FETs) based on terminal technology. In recent years, breakthroughs have been made through the introduction of new structures, dielectric materials, heterogeneous epitaxy, etc. Currently, diamond devices have shown promising applications in high-power applications, with a BV of 10 kV, a BFOM of 874.6 MW/cm2, and a current density of 60 kA/cm2 already realized. This review summarizes the research progress of diamond materials, devices, and specific applications, with a particular focus on the development of SBDs and FETs and their use in high-power applications, aiming to provide researchers with the relevant intuitive parametric comparisons. Finally, the paper provides an outlook on the parameters and development directions of diamond power devices.

Physico-chemical characterization of polyimide passivation layers for high power electronics applications

Silicon carbide (SiC) is a wide bandgap semiconductor suitable for high-voltage, high-power and high-temperature applications. However, the production of advanced SiC power devices still remains limited due to some shortcomings of the dielectric properties of the passivation layer. Thanks to their high operating temperature and dielectric strength, spin coated polyimide (PI) layers are considered ideal candidates for SiC devices passivation and insulation. In this view, a robust methodology for the physico-chemical characterization of such PI layers is required. Thanks to the use of time of flight-secondary ion mass spectrometry (ToF-SIMS), a SIMS-based surface-sensitive technique that provides specific identification of molecules, it was possible to distinguish different types of PIs employed in commercial SiC devices and postulate their molecular structure. This was obtained after careful selection of the analytical conditions used for the characterization of the specimens.The results attained in this study open the way for further improvements in one of the most key issues in the development of higher SiC power devices.