Spin switches are a fundamental component in the majority of spintronic devices, and have found extensive application in data storage, logical data manipulation, and signal processing. An essential aspect of constructing a spin switch is determining a stable two-dimensional material, which is easy to control and produce. Theoretical studies have shown that graphether is particularly promising due to its exceptionally high melting point and outstanding air stability. The band structure can be modified by doping, making it an important material for spin switch applications. In this paper, we have calculated the electromagnetic properties of doped graphether by first principles. Then we select a modified graphether with P-type and N-type doping configurations to construct magnetic tunnel junctions (MTJ). The results show that the MTJ exhibits perfect highly efficient spin switch as a result of spin reversal induced by spin-transfer torque (STT). In addition, our designed MTJ shows a remarkable rectification effect and spin filtering effect (SFE). According to our calculations, the modified graphether materials also show promise as two-dimensional spintronics materials.