High Performance RF Research Articles

Reduced trap state density in AlGaN/GaN HEMTs with low-temperature CVD-grown BN gate dielectric

In this Letter, low-temperature (400 °C) chemical vapor deposition-grown boron nitride (BN) was investigated as the gate dielectric for AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors (MISHEMTs) on a Si substrate. Comprehensive characterizations using x-ray photoelectron spectroscopy, reflection electron energy loss spectroscopy, atomic force microscope, high-resolution transmission electron microscopy, and time-of-flight secondary ion mass spectrometry were conducted to analyze the deposited BN dielectric. Compared with conventional Schottky-gate HEMTs, the MISHEMTs exhibited significantly enhanced performance with 3 orders of magnitude lower reverse gate leakage current, a lower off-state current of 1 × 10−7 mA/mm, a higher on/off current ratio of 108, and lower on-resistance of 5.40 Ω mm. The frequency-dependent conductance measurement was performed to analyze the BN/HEMT interface, unveiling a low interface trap state density (Dit) on the order of 5 × 1011–6 × 1011 cm−2 eV−1. This work shows the effectiveness of low-temperature BN dielectrics and their potential for advancing GaN MISHEMTs toward high-performance power and RF electronics applications.

Low insertion loss interposer approach for RF applications based on commercial LTCC tape, alkaline-free glass and printed metallization

Materials with high RF performance are in increasing demand due to the needs of modern telecommunications. Glass and low-temperature co-fired ceramics (LTCCs) are both interesting candidates for the design of complex signal transmission systems. Glass can be processed in large panels, and has suitable structure dimensions for silicon processing, but its multilayer capability is limited. LTCC is a mature technology for complex multilayer assemblies, but the structure dimensions and conductor line resolution are restricted by the need to use screen printing technology. The approach presented here combines the advantages of both technological domains: a thin glass sheet is bonded with no additional material to a LTCC multilayer ceramic and sintered to form a tight joint. Metallization of the glass is created using printable pastes and electroplating. Two fabrication routes are compared: etching of printed thick film metal layers, and semi-additive structuring. The results of RF measurements show a low attenuation per unit length for both types of metallization, indicating that our approach is a promising one for the integration of heterogeneous systems of RF transmission modules.

Wideband-tunable microwave photonic filter using dissipative self-interference microring resonators

We propose and demonstrate a widely tunable microwave photonic filter with controlled frequency agility, bandwidth reconfigurability and flexible switching functions. It is based on the self-interference microring aided by an asymmetric Mach–Zehnder interferometer, breaking the fundamental microring footprint limit and achieving a doubled free spectral range (123.2 GHz) with a strong out-of-band rejection. Simulation results show that a bandpass microwave photonic filter can be tuned across a 60 GHz frequency range with a varied 3-dB bandwidth from 2.13 GHz to 40.7 GHz in a cascaded dual-ring topology. Its RF out-of-band rejection ratio is improved by more than 60 dB in the high frequency region due to a perfect residual phase cancellation. A dual-band notch microwave photonic filter with an extinction ratio of about 50 dB and a frequency tunable range of about 27.7 GHz is also demonstrated, showing its broadly applicability. Our method highlights its suitability to improve chip-scale wideband and high-performance RF receiver systems.

On the improved RF performance of step field plate LDMOS transistor

This paper presents an analysis of the Step Field Plate Laterally Diffused Metal Oxide Semiconductor (SFP LDMOS) structure for improved high power and RF performance. The proposed structure is cost-effective, CMOS integrable, and has a high power figure of merit (FoM) due to its high off-state breakdown voltage (BVDS,off) and low specific on-resistance (Rsp). Significant improvement in frequency behavior is observed, as demonstrated by the flatter trans-conductance (gm), 12.5x lower gate-to-drain capacitance (Cgd), 2.5x lower gate-to-source capacitance (Cgs), and lower output conductance (gds). Single tone and double tone analyses are performed on an RF PA circuit implemented in TCAD. Results show ∼5 dBm higher output power (Pout), ∼6 dB higher power gain, and 46% higher drain efficiency (η), which are attributed to ∼1.9x lower drain-to-source capacitance (Cds) and ∼15 dBm lower magnitude of third-order intermodulation distortion due to lower third order derivative of drain current (ID). The paper also explains the device physics behind these observations.

Ferroelectric Based Low Power MOSFET for DC/RF Applications: Machine Learning Assisted Statistical Variation Analysis

The analog/radio-frequency (RF) performance of a ferroelectric-based substrate metal oxide semiconductor field effect transistor (FE-MOSFET) with dielectric spacer was designed and proposed. The utilization of gate side wall spacers aims to mitigate short-channel effects (SCEs), and improve overall device performance. Simulation results demonstrate enhanced performance metrics, including improved transconductance (80%), reduced gate leakage (95.4%), and enhanced cutoff frequency (25%), making this design a promising candidate for next-generation high-performance analog and RF applications. Additionally, a novel machine learning (ML)-assisted approach is proposed for investigating the spacer-based FE-MOSFET to reduce the computational cost of numerical TCAD device simulations with the help of conventional- artificial neural network (C-ANN). This method is reported for the first-time ML-based C-ANN for Fe-based low-power MOSFET, matches the similar accuracy of physics-based TCAD with the fastest learning rate and fastest computational speed (in 95–100 s). An ML-based prediction replacement for physics-based TCAD is developed to save around 8–10 h of runtime for each iteration. Because ML predictions can never be 100% accurate, it is essential to ensure approximately zero mean-square error in the final results.

Myelin bilayer mapping in the human brain in vivo.

To quantitatively map the myelin lipid-protein bilayer in the live human brain. This goal was pursued by integrating a multi-TE acquisition approach targeting ultrashort T2 signals with voxel-wise fitting to a three-component signal model. Imaging was performed at 3 T in two healthy volunteers using high-performance RF and gradient hardware and the HYFI sequence. The design of a suitable imaging protocol faced substantial constraints concerning SNR, imaging volume, scan time, and RF power deposition. Model fitting to data acquired using the proposed protocol was made feasible through simulation-based optimization, and filtering was used to condition noise presentation and overall depiction fidelity. A multi-TE protocol (11 TEs of 20-780 μs) for in vivo brain imaging was developed in adherence with applicable safety regulations and practical scan time limits. Data acquired using this protocol produced accurate model fitting results, validating the suitability of the protocol for this purpose. Structured, grainy texture of myelin bilayer maps was observed and determined to be a manifestation of correlated image noise resulting from the employed acquisition strategy. Map quality was significantly improved by filtering to uniformize the k-space noise distribution and simultaneously extending the k-space support. The final myelin bilayer maps provided selective depiction of myelin, reconciling competitive resolution (1.4 mm) with adequate SNR and benign noise texture. Using the proposed technique, quantitative maps of the myelin bilayer can be obtained in vivo. These maps offer unique information content with potential applications in basic research, diagnosis, disease monitoring, and drug development.

High-Performance Broadband RF Channelized Receiver Without Frequency Shifting

High-Performance Broadband RF Channelized Receiver Without Frequency Shifting

A breakthrough for temperature and linearity stability from device to circuit-level with 14 nm junctionless SOI FinFET: Advancing K-band LNA performance

SOI junctionless (JL) FinFETs are well-suited for future wireless communication systems; however, they suffer from the self-heating effect (SHE), which diminishes performance at higher temperatures. We proposed a novel structure called p-layer JL-FinFET (pL-JL-FinFET) to improve high-frequency performance at high temperatures. The Ge p-layer beneath the Silicon Fin increases electron current density and enhances device performance. Two high thermal conductivity 4H-SiC boxes are placed below the source and drain regions to overcome SHE. The pL-JL-FinFET exhibits the maximum transconductance of 148 μS, unity gain cut-off frequency of 455 GHz, and maximum available gain of 28.6 dB, which are improved by 208 %, 26 %, and 35 %, respectively, compared to regular JL-FinFET. Temperature analysis demonstrates suppressed SHE and better thermal stability than the regular JL-FinFET. Also, the pL-JL-FinFET shows superior thermal behavior in different fin shapes. The pL-JL-FinFET with a rectangular fin shape shows excellent linearity and high-frequency performance, achieving unconditional stability and minimum noise figure (NFmin) of less than 1 dB. An extracted small signal model is used to design a K-band low noise amplifier (LNA) with maximum NF and gain values of 0.75 dB and 18.7 dB. The pL-JL-FinFET opens opportunities for reliable, high-performance RF circuits while effectively managing thermal behavior.

Variation of the performance of YBa[formula omitted]Cu[formula omitted]O[formula omitted] radio frequency superconducting quantum interference device with bicrystal grain boundary angle

High transition temperature (high-Tc) superconducting quantum interference devices (SQUIDs) based on bicrystal grain boundary junctions have been utilized in a wide range of applications. To explore the effect of the bicrystal grain boundary angle on the property of the high-Tc SQUID, we fabricated and characterized YBa2Cu3O7−δ (YBCO) radio frequency (rf) SQUIDs using [001]-tilt grain boundary junctions on SrTiO3 (STO) bicrystal substrates with three different misorientation angles of θ=18∘, 24°, and 30°. Unlike the device of θ=18∘ showing only the triangular waveform of the voltage–flux (V−Φ) characteristics, for device of θ=24∘ and 30°, the shape of the V−Φ curve can be tuned from approximately triangular into nearly rectangular by adjusting the working point of the device. It suggests that, as θ increases from 18° to 30°, the operation of the device may change from the hysteretic mode into the nonhysteretic mode. This is backed by electrical transport measurements of YBCO bicrystal junctions on separate STO substrates, which help to reveal that lying behind the indicated changeover of the SQUID operation mode is the exponential decrease of the junction critical current density Jc as θ increases. The white noise of the device, which decreases with increasing flux-to-voltage transfer coefficient ∂V/∂Φ, shows a large drop as θ increases to 24°. For both 24° and 30° devices, the white field noise at 77 K is about 90 fT/Hz1/2 at respective optimum working points. For device of 30° with nearly rectangular V−Φ characteristics showing the largest ∂V/∂Φ among the fabricated samples, the white noise region extends below 10 Hz and a field noise of 145 fT/Hz1/2 at 1 Hz is shown, demonstrating the potential of obtaining high-performance bicrystal YBCO rf SQUIDs with this grain boundary angle.

A High-Performance RF MEMS Power Sensor for Near-Zero Detection Applications

A High-Performance RF MEMS Power Sensor for Near-Zero Detection Applications

(Invited) Gallium Oxides Devices for Grid-Scale Power Electronics and High Power Switched Mode RF Amplifiers

Within a decade of the first demonstration of a MESFET device, monoclinic β-Ga2O3 (Ga2O3) devices have made incredible progress in breakdown voltages, power device figure of merit and high-speed performance. It has emerged as a promising ultra-widebandgap semiconductor for next generation power, GHz switching and RF applications. In this talk, we will present an overview of our studies on fundamental transport properties, kilovolt class power MOSFETs and aggressively scaled RF devices. The large bandgap of Ga2O3 leads to a high critical field strength. This high field strength in combination with demonstrated room temperature mobility and calculated electron velocity leads to a higher Baliga’s Figure of Merit (BFoM) and Johnston Figure of Merit (JFoM) than current commercially available widebandgap technologies. Additionally, the large bandgap also enables high temperature operation and radiation hardness making it attractive for space applications such as Mars and Venus missions.In the first part, we will discuss the deep insights gained from the first-principles based transport calculations in Ga2O3. We will discuss the limits to low field mobility, saturation velocities and impact ionization coefficients. The impact of the plasmon-phonon coupling on the phonon limited transport will be discussed. We will present the experimental signatures of plasmon-phonon coupling and anti-screening behavior in ionic gated accumulation layers.Next, I will describe our work on the lateral MOSFETs with improved field plate design and beyond-kV breakdown. Temperature dependent analysis and device simulation suggest an extrinsic breakdown mechanism outside the channel. A simple and yet effective SU-8 polymer passivation technology was developed that results in significant improvement in breakdown voltages. The higher field strength of the SU-8 polymer enables a significant increase in breakdown voltage to 8 kVs in lateral MOSFETs. However, these devices show a high Ron, which is due to the depletion caused by RIE of the channel. We will present the use of ultra-high vacuum annealing techniques to improve the on-resistance of the devices still maintaining the multi-kilo-volt rating of the devices.Due to its high JFoM, Ga2O3 is a potential candidate for high power density RF amplifiers. We will also present the performance advancement that can be obtained in RF power performance using Ga2O3 technology. We will present the challenges in the technology and potential solutions. We will present the experimental DC and pulsed measurements on laterally scaled MOSFETs with 100 nm gate length. Severe DC-RF dispersion was observed which is attributed to the RIE damage and surface states on the oxide. Passivation of the devices shows reduced current collapse. Using aggressive gate lengths and gate-source spacing scaling, (AlxGa1-x)2O3/Ga2O3 heterostructure FETs were fabricated that show record high RF performance. The device transconductance was limited by the regrowth interface resistance. Ex-situ silicon nitride passivation was shown to be effective to reduce DC-RF dispersion. Recently, thin channel MOSFETs with deep-sub-micron gate lengths and source/drain regrowth have demonstrated devices with simultaneously low on resistance, high frequency, high voltages.

A Compact Negative Group Delay Microstrip Diplexer with Low Losses for 5G Applications

Microstrip Diplexers play an important role in modern wireless communication systems. In this paper, a novel compact microstrip diplexer based on spiral cells is presented. The proposed resonator primarily consists of two spiral thin lines connected to a pair of coupled lines. This novel resonator is analyzed mathematically to find its behavior and tune the dimensions of the final layout easily. Using the analyzed resonator, two bandpass filters (BPFs) are designed. Then, a novel high-performance microstrip diplexer is obtained by designing and integrating these two BPFs. The center frequencies of the first and second channels of the proposed diplexer are 1.86 GHz and 4.62 GHz, respectively. The proposed diplexer boasts a remarkably small size of 0.004 λg2 and features flat channels with low insertion losses of only 0.048 dB and 0.065 dB for the first and second channels, respectively. The maximum group delays of S21 and S31 are 0.31 ns, 0.86 ns, respectively, which are good values for a modern communication system. Meanwhile, inside its passbands for some frequency ranges, its group delays are negative. Thus, using this diplexer can decrease the signal dispersion. The 1st and 2nd passbands are wide with 47.3% and 47.1% fractional bandwidths (FBW), respectively. Therefore, this diplexer can be easily and successfully used in designing high-performance RF communication systems.

RF Glass Technology Is Going Mainstream: Review and Future Applications

Driven by the increasing demand for high-throughput communication links and high-resolution radar sensors, the development of future wireless systems pushes at ever greater operating frequencies. By analogy, high-performance computing (HPC) systems with high-bandwidth I/Os have become a mainstream solution to address multi Gbit/s data rates. Heterogeneous integration technologies play a vital role here in enhancing the performance and functional density, along with reducing the size and costs of such RF systems. In line with this trend, many passive components, which have once been monolithically integrated, are now implemented on ceramic or polymer-based packages. Besides these long-established material and process technologies, considerable efforts have also recently been devoted to the development of RF components on glass and glass-ceramics. Spurred by their low dielectric losses, extremely smooth surfaces, and excellent dimensional stability, glass technologies are emerging as a promising alternative for high-volume and high-performance RF applications. In this article, relevant glass materials and key enabling technologies are reviewed and put into context with well-established RF substrate technologies. Another focus is set on the latest glass-based packaging and interposer solutions ranging from MHz-to-THz frequencies. To showcase the development activities and practical accomplishments of the RF glass technology, also a large variety of key components is presented. Finally, the paper concludes by discussing future research and development directions of RF glass devices.

Investigation and Research of High-Performance RF MEMS Switches for Use in the 5G RF Front-End Modules

In this article, based on the developed methodology, the stages of designing two designs of high-performance radio-frequency single-pole single-throw microelectromechanical switches are investigated. These radio-frequency microelectromechanical switches are designed to operate at a central resonant frequency of 3.6 GHz and 3.4 GHz, respectively, as well as to work both in mobile communication devices and in the design of the architecture of 5G mobile networks, in particular in arrays of integrated antennas and radio-frequency interface modules. The manufacture and study of two designed structures are researched. For the first manufactured experimental sample in the open state the insertion loss is no more than -0.69 dB and the reflection loss is -28.35 dB, and in the closed state the isolation value is at least -54.77 dB at a central resonant frequency of 3.6 GHz. For the second in the open state the value of the insertion loss is no more than -0.67 dB and the reflection loss is -20.7 dB, and in the closed state the isolation value is not less than -52.13 dB at the central resonant frequency of 3.4 GHz. Both manufactured experimental samples are characterized by high linearity, as well as a small value of contact resistance in the closed state.

Design and Optimization of a Compact Microstrip Filtering Coupler With Low Losses and Improved Group Delay for High-Performance RF Communication Systems

Design and Optimization of a Compact Microstrip Filtering Coupler With Low Losses and Improved Group Delay for High-Performance RF Communication Systems

Surface-Scan MRI Diagnostics of Li-Ion Cells: Boosting the Sensitivity with High-Performance Unilateral RF Sensors

Surface-Scan MRI Diagnostics of Li-Ion Cells: Boosting the Sensitivity with High-Performance Unilateral RF Sensors

Developing high performance RF heating scenarios on the WEST tokamak

High power experiments, up to 9.2 MW with LHCD and ICRH, have been carried out in the full tungsten tokamak WEST. Quasi non inductive discharges have been achieved allowing to extend the plasma duration to 53 s with stationary conditions in particular with respect to tungsten contamination. Transitions to H mode are observed, and H-modes lasting up to 4 s have been obtained. The increase in stored energy is weak since the power crossing the separatrix is close to the L–H threshold. Hot L mode plasmas (central temperature exceeding 3 keV) with a confinement time following the ITER L96 scaling law are routinely obtained. The weak aspect ratio dependence of this scaling law is confirmed. Tungsten accumulation is generally not an operational issue on WEST. Difficulty of burning through tungsten can prevent the discharge from accessing to a hot core plasma in the ramp-up phase, or can lead to rapid collapse of the central temperature when radiation is enhanced by a slight decrease of the temperature. Except a few pulses post-boronization, the plasma radiation is rather high (P rad/ P tot ∼ 50%) and is dominated by tungsten. This fraction does not vary as the RF power is ramped up and is quite similar in ICRH and/or LHCD heated plasmas. An estimate of the contribution of the RF antennas to the plasma contamination in tungsten is given.

Crack-free 2.2 μm-thick GaN grown on Si with a single-layer AlN buffer for RF device applications

The paramount issues facing commercialization of GaN-on-Si RF devices include the inevitable wafer bowing and large thermal resistance when incorporating the conventional AlN/AlGaN multilayer or superlattice buffer for stress control. The large thermal resistance due to the strong phonon scattering by the AlGaN alloy and multiple interfaces of the AlN/AlGaN multilayer or superlattice buffer must be carefully addressed, which can significantly affect the performance and reliability of GaN-on-Si RF devices. In this letter, we report a successful growth of crack-free 2 μm-thick GaN film on 6 inch high-resistivity (>10 kΩ cm) Si with a single-layer AlN buffer. By virtue of a quasi-2D GaN nucleation on the AlN buffer layer, the as-grown GaN-on-Si wafer presents a tremendous reduction in warpage from 800 to less than 8 μm, while preserving a high crystalline quality. The full width at half maximum of x-ray diffraction of GaN (0002) and (102) planes are 457 and 509 arcsec, respectively, and the residual stress is as low as 0.2 GPa. The underlying physical mechanisms of the quasi-2D GaN nucleation layer involved in stress engineering and dislocation annihilation have been discussed in detail. This work paves the way for the fabrication of low-cost and high-performance GaN RF devices grown on HR-Si.

Challenges for Sige Bicmos in Advanced-Node SOI

D-band (110-170GHz) spectrum is gaining attention for various applications, including 6G mm-Wave, sub-THz sensing, and radar. These systems require lattice spacing for antenna elements at sub-1mm and a very low loss signal path from antenna to integrated chip. A highly efficient front-end in a very small form factor will be required for these systems. This drives the requirement for a monolithically integrated high-gain, high-efficiency front-end that also leverages the benefits of a high-speed / high-density digital CMOS. Silicon germanium (SiGe) heterojunction bipolar transistors (HBT) integrated along with a high-density CMOS provide such an all-silicon monolithic solution.The US government is fostering the expansion of “unique and differentiated domestic manufacturing” with funding through DARPA’s Technologies for Mixed-mode Ultra Scaled Integrated Circuits (T-MUSIC) [1] program to enable disruptive RF mixed-mode technologies by developing high performance RF analog integrated with advanced digital CMOS. Through the T-MUSIC program, DARPA seeks to: 1) advance RF and mixed-mode devices to support ultra-wideband RF frontends from HF to 100 GHz; 2) integrate those devices with high density digital CMOS electronics at the wafer scale to enable embedded digital intelligence; 3) develop and explore ultra-high resolution broadband mixed-mode circuit building blocks for DoD-relevant applications; 4) explore innovative device topologies and materials to form THz devices in an advanced digital CMOS fabrication platform; and 5) establish a domestic ecosystem that facilitates enduring DoD access to differentiated capabilities for high performance RF mixed-mode SoCs.Under T-MUSIC, GlobalFoundries is demonstrating BiCMOS on 45nm PDSOI, which is the focus of this paper, and 22nm FDSOI CMOS with goals of increasing HBT performance of fT/fMAX from 350/500 GHz to 400/600 GHz and 600/700 GHz. HBTs with fT/fMAX of 380/550GHz GHz have been demonstrated building upon previously published results [2]. This paper will touch on some of the challenges that were encountered in achieving that result and discuss those anticipated in future work.Achieving these results required scaling transistor dimensions. Vertical scaling of the emitter, base and collector layers, with higher doping concentrations, reduces transit time but results in higher current densities and higher electric fields. Lateral scaling of the transistor structure reduces parasitic capacitance and resistance but concentrate the power dissipation in a smaller area. The thermal conductivity of silicon is 148W/m-K whereas that of silicon dioxide is ~1.4W/m-K. Even a thin layer of oxide will significantly increase the self-heating of the HBT. Therefore, we replace the SOI with coplanar epitaxy in regions where the HBTs are formed.The vertical scaling of the HBT requires limiting the thermal cycles that the HBT will experience during processing and suggests forming the HBT as late as possible in the CMOS process. However, the thermal cycles associate with the epitaxy and film depositions to form the HBT impact the CMOS transistors which suggests forming the HBT early in the process. We found a point in the process that offers the best compromise minimizing the impact to the doped-channel PDSOI CMOS while achieving the HBT performance goals. Work is just beginning on integration tradeoffs for FDSOI with metal gate and high-K dielectrics.Advanced-node CMOS processes can form components having smaller dimensions which offers advantages for lateral scaling but also presents challenges for forming the HBT. The contact height in 45nm is significantly less than the height of the HBT structure used in GF’s 9HP process. We changed the formation of the emitter and base so that the emitter and base contacts are almost coplanar in contrast to 9HP where the emitter was almost twice the height of the base. This problem is being further exasperated as we migrate to 22nm.The shrinking of BEOL wiring dimensions, along with the ability of the HBT to drive high currents, presents challenges in designing within limits imposed by electromigration. The use of wider wires is constrained by metal density rules. The use of stacked metal levels and redundant vias impact the parasitic capacitances and resistances of the interconnects.The paper and presentation will review these, and other challenges encountered in achieving BiCMOS integration of SiGe HBTs with fT/fMAX of 380/550GHz GHz [see figure] on a 45nm PDSOI CMOS and touch future work.This research was developed with funding from the Defense Advanced Research Projects Agency (DARPA) and is Approved for Public Release, Distribution Unlimited. The views, opinions and/or findings expressed are those of the author and should not be interpreted as representing the official views or policies of the Department of Defense or the U.S. Government.[1] https://www.darpa.mil/attachments/T-MUSIC_Proposers%20Day_Presentations_Combined.pdf [2] J. Pekarik et al., 2021 IEEE BCICTS, 2021, pp. 1-4, Figure 1

Unique 3D metamaterial split ring resonator for wireless communication with high negative refractive index and for medium ratio

This article presents the unique 3D metamaterial split ring resonator (3D-MTM SRR) model with high negative refractive index and effective medium ratio at 2.45 GHz frequency. It is integrated with two layers: one square bracket structure printed on the back side of the substrate and another dual split ring with an air gap placed above the substrate. Both structures are coupled by metallic vias, which serve as connecting vias to create the 3D-MTM SRR model. Simulation and experiment results shows good agreement for high negative refractive index and effective medium ratio of −17 and 6.16, respectively. To fully comprehend the resonance phenomena of the proposed 3D-MTM model, an analogous circuit analysis is carried out. In addition, to validate the MTM activities, array topologies based on 3D-MTM cells are analyzed. Thus the unique properties of 3D-MTM SRR allow to develop the high-performance RF devices for wireless applications.