High P-type Conductivity Research Articles

HIGH CONDUCTIVITY p-TYPE CdS

High conductivity p-type CdS was formed by ion implanting Bi into n-type single crystals. Hall measurements and lifetime studies were performed on the implanted layers. p-n junctions were formed in high conductivity n-type material and light emission observed in the forward direction. By making two independent contacts to the p-type layer and measuring their I-V characteristics, it was determined that they were not rectifying.

Remarks on: “An explanation of the high cation vacancy concentration and p-type conductivity in semiconductors containing a multivalent metal in its lowest valence state”

Remarks on: “An explanation of the high cation vacancy concentration and p-type conductivity in semiconductors containing a multivalent metal in its lowest valence state”

An explanation of high cation vacancy concentration and p-type conductivity in semiconductors containing a multivalent metal in its lowest valence state

A model is presented which features an explanation for the large deviation from stoichiometry and correspondingly high hole concentration in semiconductors containing a multivalent metal in its lowest valence state. The model is based on the assumption that cation vacancy acceptor states are associated with a band which lies below the highest filled band. The energy of vacancy formation is thereby reduced by a compensating energy, E c , which is gained as the acceptor states are filled. Using SnTe as an example, its value of E c is estimated.