High Optical Gain Research Articles

Modeling and simulation of optical gain of GaP0.3Sb0.7/InP0.7Sb0.3 type-II heterostructure for IR optoelectronics under variable well width, temperature and external electric field

Abstract The type-II GaP0.3Sb0.7/InP0.7Sb0.3 nanoscale heterostructure is modelled and simulated for its optical properties in near-infrared lasing applications. The optical gain of GaP0.3Sb0.7/InP0.7Sb0.3 type-II heterostructure is analyzed under different external values of electric fields, temperatures and well widths at room temperature 300 K. The complete structure is grown on InP substrate. The effects of a varied temperature (290 K–320 K), quantum well width (2 nm, 3 nm, and 4 nm) and applied electric field (20 kV cm−1–8 0 kV cm−1) are explored regarding the band alignment, wavefunction, band dispersion, matrix elements, gain and wavelength. The Luttinger-Kohn model is utilized to compute the band structure. The gain computation involves the evaluation of the 6 × 6 k·p Hamiltonian matrix. The proposed heterostructure at 2 nm quantum well width exhibits a high optical gain of 14998 cm−1 in x-polarization and 16572 cm−1 in y-polarization for injected carrier concentration of 4 × 1012 cm2. Under variable temperature and electric field, a significant optical gain is achieved in x, y and z input polarizations. This heterostructure is regarded as new because of its very high optical gain in NIR regime, that makes it beneficial for optoelectronics.

Spectroscopic investigation of co-formers on Dy3+ ions activated Barium comprised zinc borate glasses for enhancing the solid-state laser applications

The purpose of the existing research is to analyze the luminescence behavior on a set of different co-formers involved Dy3+ ions activated Barium comprised zinc borate glasses fabricated through the utilization of usual melt quenching technique with a glass composition of 64B2O3+20ZnF2+15BaO+1Dy2O3 & 44B2O3+20A+20ZnF2+15BaO+1Dy2O3 (where A = 0, P2O5, TeO2, Bi2O3). Their structural, optical, luminescence and decay behavior were scrutinized by several respective characterization techniques. Some of the physical properties were calculated by utilizing the corresponding formulae. Besides, the bonding parameter and oscillator strength estimation alongside Judd-Ofelt parameter are also computed to find out the radiative properties from luminescence spectra. From these analyses, ionic nature of the glass network was confirmed. The spectroscopic intensity parameter follows the tendency Ω2>Ω6>Ω4. This higher value of Ω2 is owing to the larger oscillator strength value and signalizing that Dy3+ ions are completely doped into the glass network. Among all the as- quenched samples, BZfBaT:Dy glass possesses high stimulated emission cross-section and holds high optical gain width value which implies that the glass is a perfect candidate intended for laser utilization. By utilizing its emission spectra, the colour chromaticity coordinates (x, y), colour purity, colour correlated temperature (CCT), and Y/B intensity ratio were investigated by means of CIE 1931 diagram and confirmed the light emitting capability. Decay curve displays well-fitting with the exponential fit and the efficiency (ɳ) for the BZfBaP:Dy glass is found to be 61 % and possesses high optical gain signalizing that the material is a perfect choice for optoelectronic applications.

High ultraviolet gain in Ga2O3/ZnO heterojunction photodetector based on MSM structure

Amorphous Ga2O3 (a-Ga2O3) has attracted extensive attention due to its simple preparation process and low cost, but the extension of photoelectron lifetime caused by the trap state inhibits the responsiveness of a-Ga2O3 photodetector (PD), and how to improve the ultraviolet (UV) gain of a-Ga2O3 based PD is still a challenge. In this study, an a-Ga2O3/ZnO heterojunction PD based on metal-semiconductor-metal (MSM) structure was designed and fabricated by radio frequency magnetron sputtering (RFMS), and a high-concentration electron transport channel was formed by using carrier multiplication and specific band structure in the high-field region of MSM structure, which achieved high optical gain and extraordinary optical detection ability. In the UVC-UVA band, the device has a peak responsivity of 1.59 A W−1 and a high light-dark ratio, EQE and D* of 1×104, 647 % and 3.6×1012 Jones under 5 V, respectively. In particular, compared to ZnO PD and a-Ga2O3 PD, the responsivity of the device is improved by a factor of 21 and 90, respectively. This study provides a new and effective method for the significant improvement of a-Ga2O3 based UV photoelectric detection performance.

Blue Perovskite Lasing Derived from Bound Excitons through Defect Engineering.

All-inorganic perovskite films have emerged as promising candidates for laser gain materials owing to their outstanding optoelectronic properties and straightforward solution processing. However, the performance of blue perovskite lasing still lags far behind due to the inevitable high density of defects. Herein, we demonstrate that defects can be utilized instead of passivated/removed to form bound excitons to achieve excellent blue stimulated emission in perovskite films. Such a strategy emphasizes defect engineering by introducing a deep-level defect in mixed-Rb/Cs perovskite films through octylammonium bromide (OABr) additives. Consequently, the OA-Rb/Cs perovskite films exhibit blue amplified spontaneous emission (ASE) from defect-related bound excitons with a low threshold (13.5 μJ/cm2) and a high optical gain (744.7 cm-1), which contribute to a vertical-cavity surface-emitting laser with single-mode blue emission at 482 nm. This work not only presents a facile method for creating blue laser gain materials but also provides valuable insights for further exploration of high-performance blue lasing in perovskite films.

Plasmonic tuning of nano-antennas for super-gain light amplification

Nanoscale conductive materials are often used for inducing localized free electron oscillations known as plasmons. This is due to their high electronic excitability under optical irradiation owing to their super-small volume. Recently, plasmons have been of interest for enhancing the gain-bandwidth product of optical amplifiers. There are currently two well-established mechanisms for light amplification. The first one is via stimulated emission of radiation (lasers) using a given energy source and often an optical feedback mechanism. The second one is based on the nonlinear coupling of a low-intensity input wave and a high-intensity pump wave for energy exchange (parametric amplifiers). Both techniques have shortcomings. Lasers have a small operation bandwidth and offer a limited gain, but require moderate energy pumping to operate. Whereas optical parametric amplifiers (OPAs) offer a high operation bandwidth along with a much higher optical gain, with the drawback of requiring intense pumping to be functional. The aim of this paper is to introduce a technique that combines the advantages and eliminates the drawbacks of both techniques in the nanoscale to allow for a better amplification performance in integrated optical devices. This is achieved by inducing a plasmonic chirp in conductive nanomaterials a.k.a nano-antennas, which enables the confinement of an enormous electric energy density that can be coupled to an input beam for amplification. Using the Finite Difference Time Domain numerical-method with the material parameters of well-known semiconductors, intramaterial condensation of electric energy density is observed in semiconductor nano-antennas for certain plasmonic chirp-frequencies which enables broadband high-gain optical amplification based on free-electron oscillations that is promising for small-scale optical devices requiring a high gain-bandwidth product. The results are in good agreement with semiempirical data.

Spectroscopic evaluation of Nd3+ doped cadmium-boro-phosphate glasses for near-IR (1060 nm) laser applications

Neodymium-doped Cadmium-boro-phosphate glasses were synthesized using the melt quenching procedure to investigate their lasing capacities. The FTIR results reveal the different functional groups and structural units of our glass system. Physical parameters such as density (ρ), molar volume (VM), refractive index (n), Urbach energy (ΔE), and band gap (Eg) were measured, and computed. The results demonstrated that our glasses have indirect-allowed transitions with low localized states. The photoluminescence and absorption spectra were measured and the results suggest that the Nd3+ ions have a uniform distribution throughout the glass network. The Judd-Ofelt parameters (Ω2, Ω4, and Ω6) were obtained using the least-squares procedure. The spectroscopic quality factor (χ), the emission-peak-wavelength (λp), the radiative-transition-probability (Ar), the radiative lifetime (τrad), the radiative and experimental branching-ratio (βrad, βexp), the effective-bandwidth (Δλeff), the stimulated-emission-cross-section (σ(λp)), the gain-bandwidth (σ(λp), × Δλeff) and the optical-gain (σ(λp) x τrad) were measured, computed and compared with other famous reported glasses. The current glass showed low χ values (=0.45), high βexp (=0.7), and high optical gain (15.8 × 10− 24 cm2 s). According to its spectroscopic and radiative properties, our glass system shows remarkable potential for lasing around 1057 nm.

Erbium-Ion-Doped Bismuth Borate Glasses for High Optical Gain NIR Fiber Laser Applications

The study focused on investigating the thermal, structural, and luminescent properties of bismuth borate glasses doped with erbium (Er3+) ions and modified with Gd2O3, K2O, and Li2O (BBGKL: Erx) aiming for fiber lasers. Two glass transition temperatures were observed at 381 (Tg1) and 471 K (Tg2) for BBGKL glass. O1s de-convolution spectrum bridging oxygens for BBGKL glass, including B-O, Bi-O, Li2O, and K2O, were discovered by XPS. Both the photoluminescence (PL) 4I13/2→4I15/2 NIR and the absorption bands from the UV-visible-NIR spectrum were found to occur at 1531 nm for BBGKL: Er. The luminescence quenching was not noticed up to 3.0 mol% of Er3+ ion concentration. The BBGKL: Er0.5 glass has a remarkable connection between its absorbance and emission cross-sections of 0.77 and 0.82 × 10−20 cm2, respectively. The longest lifetime of green emission for the 4S3/2→4I15/2 transition was found for BBGKL: Er2.0 glass at 10.6 μs and 1531 nm NIR emission for the 4I13/2→4I15/2 transition of BBGKL: Er0.5 glass was 0.77 ms. In the 1413–1728 nm NIR band region for BBGKL:Er3.0, high optical gain cross-section G(λ) was promising for the population inversion at γ = 0.6. These findings suggested that the BBGKL: Er0.5 glass would prove helpful in NIR fiber laser applications.

Chaotic dynamics in X-ray free-electron lasers with an optical undulator.

In this work, the chaotic motions of relativistic electrons in X-ray free-electron lasers are investigated using an optical undulator in the presence of a magnetized ion-channel background. To miniaturize X-ray light sources, the optical undulator is a promising concept. The optical undulator provides higher optical gain than conventional magnetostatic undulators due to its micrometer wavelength. In addition, it reduces the required electron beam energy from several GeV to the multi-MeV range to produce X-ray pulses. The interaction of an optical undulator with an intense relativistic electron beam is a highly non-linear phenomenon that can lead to chaotic dynamics. At synchrotron radiation sources, the possibility of chaos control for X-ray FELs can be critical for certain classes of experimental studies. The equations of motion for a relativistic electron propagating through the optical undulator in the presence of a magnetized ion-channel can be derived from the Hamiltonian of the interaction region. Simulation results revealed that the intensity of the perturbation route from orderly behavior to chaos depends on the beam density, axial magnetic field strength, ion-channel density parameter, and pump laser undulator. Specific values of parameters were obtained for the transition from regular to chaotic paths. Bifurcation diagrams of the system were plotted to demonstrate the origin of chaos at a critical point, and Poincaré maps were created to distinguish between chaotic and orderly motions of electrons. The proposed new scheme can help to improve X-ray FELs, which have potential usages in basic sciences, medicine, and industry.

Effective surface passivation of GaAs nanowire photodetectors by a thin ZnO capping.

The III-V nanowire (NW) structure is a good candidate for developing photodetectors. However, high-density surface states caused by the large surface-to-volume ratio severely limit their performance, which is difficult to solve in conventional ways. Here, a robust surface passivation method, using a thin layer of ZnO capping, is developed for promoting NW photodetector performance. 11 cycles of ZnO, grown on pure zinc blende high-quality GaAs NWs by atomic layer deposition, significantly alleviates the undesirable effect of the surface states, without noticeable degradation in NW morphology. An average 20-fold increase in micro-photoluminescence intensity is observed for passivated NWs, which leads to the development of detectors with high responsivity, specific detectivity, and optical gain of 9.46 × 105 A W-1, 3.93 × 1014 Jones, and 2.2 × 108 %, respectively, under low-intensity 532 nm illumination. Passivated NW detectors outperform their counterparts treated by conventional methods, so far as we know, which shows the potential and effectiveness of thin ZnO surface passivation on NW devices.

Carrier-recirculating broadband photodetector with high gain based on van der Waals In2Se3/MoS2 heterostructure

Two-dimensional (2D) materials present enormous potential in photoelectric detection, medical imaging, and neuromorphic vision applications due to their superior electronic and optoelectronic properties. Nevertheless, the photoelectric performance is restricted by the short lifetime of photogenerated carriers and weak optical absorption attributed to the atomic-scale thickness. This work demonstrates a novel high-gain photodetector based on van der Waals β-In2Se3/MoS2 heterostructure induced by carrier recirculation. In this structure, the photoexcited holes are trapped in the charge traps of MoS2 driven by the built-in electric field, which suppresses the recombination of photogenerated carriers, thus the electrons are repeatedly recycled across the In2Se3 channel after the generation of electron-hole pairs, achieving the high optical gain of 2.95 × 103. The responsivity, external quantum efficiency and specific detectivity of In2Se3/MoS2 photodetector can reach 616.77 A/W, 125900 %, and 1.03 × 1012 Jones at 638 nm, respectively, which are significantly higher than those of individual In2Se3 and MoS2 photodetector. More significantly, due to the enhanced optical absorption and interlayer transition, the photoresponse spectrum of In2Se3/MoS2 heterojunction is further extended to 1310 nm, which can be applied to broadband photodetection. Therefore, the In2Se3/MoS2 vdWs heterojunction photodetector provides a feasible approach to fabricate high-performance broadband photodetectors.

Colloidal Nanoplatelets‐Based Soft Matter Technology for Photonic Interconnected Networks: Low‐Threshold Lasing and Polygonal Self‐Coupling Microlasers

AbstractSoft matter‐based microlasers are widely regarded as excellent building blocks for realizing photonic interconnected networks in optoelectronic chips, owing to their flexibility and functional network topology. However, the potential of these devices is hindered by challenges such as poor lasing stability, high lasing threshold, and gaps in knowledge regarding cavity interconnection characteristics. In this study, the first demonstration of a high‐quality, low‐threshold nanoplatelets (NPLs)‐based polymer microfiber laser fabricated using capillary immersion techniques and its photonic interconnected networks are presented. CdSe/CdS@Cd1‐xZnxS core/buffer shell@graded‐shell NPLs with high optical gain characteristics are adopted as the gain medium. The study achieves a lasing threshold below 14.8 µJ cm−2, a single‐mode quality (Q)‐factor of ≈5500, and robust lasing stability in the fabricated NPLs‐based microfibers. Furthermore, the study pioneers the exploration of polygonal self‐coupling microlasers and the optical characteristics of their interconnected fiber network. Based on the signal generation mechanism observed in the photonic networks, an interconnected NPLs‐based fiber network structure achieving single‐mode lasing emission and laser mode modulation is successfully designed. The work contributes a novel method for realizing microlasers fabricated via soft‐matter technologies and provides a key foundation and new insights for unit design and programming for future photonic network systems.

Revealing the pulse dynamics in a Mamyshev oscillator: from seed signal to oscillator pulse.

The Mamyshev oscillator (MO) is a promising platform to generate high-peak-power pulse with environmentally stable operation. However, rare efforts have been dedicated to unveil the dynamics from seed signal to oscillator pulse, particularly for the multi-pulse operation. Herein, we investigate the buildup dynamics of the oscillator pulse from the seed signal in a fiber MO. It is revealed that the gain competition among the successively injected seed pulses leads to higher pump power that is required to ignite the MO, hence resulting in the higher optical gain that supports buildup of multiple oscillator pulses. The multiple oscillator pulses are identified to be evolved from the multiple seed pulses. Moreover, the dispersive Fourier transform (DFT) technique is used to reveals the real-time spectral dynamics during the starting process. As a proof-of-concept demonstration, a highly intensity-modulated pulse bunch was employed as the seed signal to reduce the gain competition effect and avoid the multi-pulse starting operation. The experimental results are verified by numerical simulations. These findings would give new insights into the pulse dynamics in MO, which will be meaningful to the communities interested in ultrafast laser technologies and nonlinear optics.

Color tuning halide perovskites: Optical amplification and lasing

Light emission with delicate wavelength control generates fundamental colors that are essential for vision-based applications such as displays, information communication, visual and augmented reality. Yet these light emitting technologies critically rely on the development of photonic sources for proper lighting and color matching. Halide perovskites have recently emerged as excellent and efficient photonic sources due to their outstanding photophysical properties, such as low defect trap densities, long carrier lifetime, large absorption coefficient, high quantum yield and optical gain. On a par with the rapid advances of light-emitting diodes (LEDs), perovskite-based optical amplifiers and lasers have made great strides in the past few years, which have much more accurate control of color-matched lighting, high power, spatial and wavevector control of color emission. In this review, we aim to review the recent progress of perovskite lasers at micro-, nano- and subwavelength scales, discuss the properties of halide perovskites and optical cavity structures that benefit color light emission, and examine the remaining challenges in the field for the future development of perovskite-based lasing technologies.

Interfacial engineering boosted narrow-band ultraviolet LED based on n-PtNPs@ZnO:Ga microwire/AlN/p-GaN heterojunction

Low-dimensional ZnO micro/nanocrystals having high optical gain, self-constructed microcavity and large-bandgap, is the largest potential constituent for constructing droop-free and high-brightness ultraviolet light sources. In this study, we reported a workable scheme to construct high-monochromatic ultraviolet electroluminescence devices including a Ga-doped ZnO microwire decoated with platinum nanoparticles (PtNPs@ZnO:Ga MW), an AlN electron blocking layer and p-GaN layer substrate. The device exhibits a robust narrow-band ultraviolet electroluminescence peaking at around 374.8 nm and a narrowing bandwidth ∼ 13.5 nm. The electroluminescence profile is comparable with photoluminescence spectrum of ZnO:Ga MW. The device properties can be interpreted by the working mechanism of plasmonic effects, heterojunction interface engineering and optimization strategies. The AlN intermediate layer appeared in the optimized device enables effectively to tune the paths of current traveling and carrier recombination, yielding the band-edge luminescence of ZnO:Ga MW. As the device is further modified using PtNPs with desired plasmons, the optimization of heterojunction interface is significantly boosted, like the observable enhancement of holes injection efficiency, electroluminescence efficiency and interface contact, etc. Thereby, the boosted band-edge luminescence of ZnO:Ga MW can contribute to the well-being of the enhanced ultraviolet electroluminescence in our constructed LED devices. The findings are looking forward to bringing new opportunities toward the implementation of ultra-bright and high-efficiency narrow-band ultraviolet light sources, especially for the achievement of electrically-pumped microlaser devices.

Amplified spontaneous emission from inclusions containing cesium lead bromide in glasses.

Cesium lead halide (CsPbX3, X = Cl, Br and I) perovskite nanocrystals embedded glasses exhibit good optical properties and have potential as gain media. However, origins of the amplified spontaneous emission (ASE) from CsPbX3 nanocrystals are controversial. Here, it is found that ASE is from CsPbX3 nanocrystals in inclusions instead of CsPbX3 nanocrystals dispersed in the glass matrix. Inclusions with various sizes are capable of generating ASE, and ASE of the inclusions can sustain at energy densities as high as several tens of mJ/cm2. Thresholds of the fs laser energy densities increase with the increase in fs laser wavelength, and high net optical gain coefficient is obtained.

High-Performance Solar-Blind p-NiO/n-ZnO/p-Si Ultraviolet Heterojunction Bipolar Phototransistors With High Optical Gain

Ultraviolet (UV) photodetectors (PDs) have attracted significant attention for civil and military applications. Zinc-oxide (ZnO) and nickel-oxide (NiO) have been widely applied in UV-PDs owing to their wide bandgap (3.2–3.8 eV), transparency, excellent optical and electrical properties, and good chemical stability. However, UV signals are generally weak; hence, UV-PDs with high optical gain are essential. In this work, high-performance solar-blind p-NiO/n-ZnO/p-Si heterojunction bipolar phototransistors (HBPTs) were fabricated. The fabricated HBPTs exhibited a high responsivity of 9.4 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sup> A/W at a wavelength of 280 nm with <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V_CE</i> = –7 V, a high optical gain of 3.96 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sup> , and a large detectivity of 3 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">13</sup> Jones. In addition, the UV/visible rejection ratio was as high as 880. These behaviors indicate that the prepared HBPTs are good solar-blind photodetectors and suitable for the detection of weak UV signals. However, for <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V_CE</i> value below –7 V, (| <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V_CE</i> | > 7V), the optical gain decreased owing to the punch-through effect. Furthermore, band-diagrams showed that the photogenerated electrons were blocked by the potential barrier at the NiO/ZnO interface (base–emitter junction) owing to a large conduction-band discontinuity (Δ <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">E_C</i> ) of 2.7 eV, which resulted in a large optical gain in the prepared HBPTs.

Mixing Dion–Jacobson and Ruddlesden–Popper Structures in Quasi‐2D Perovskite Films for Thermal‐ and Photo‐Stable Stimulated Emission

AbstractQuasi‐two–dimensional (2D) perovskite films are promising candidates as a gain medium for stimulated emission owing to their hydrophobicity and efficient energy funneling that facilitates the population inversion. However, the commonly used Ruddlesden–Popper (R–P) perovskites still suffer from instability induced by high‐density pumping as well as the resulting heating effect. Here, quasi‐2D perovskite films with mixed Dion–Jacobson (D–J) and R–P phases are demonstrated with both excellent amplified spontaneous emission (ASE) properties and thermal‐ and photo‐stabilities under ambient conditions. In these films, octyl ammonium bulky organic cations are used to obtain the preferred crystal orientation and highly smooth surface for low‐threshold ASE, while 1,8‐octanedi ammonium cations contribute to the greatly improved stability. The films containing the D–J phase exhibit good structural stability even after 130 °C heat treatment for 48 h. The mixed‐ligands film maintains a low ASE threshold of 11.6 µJ cm−2 and a high optical gain of 413 cm−1 after environmental annealing. It is demonstrated that it is the diammonium that firmly bonds to the perovskite layer,allowing the maintenance of quasi‐2D perovskite structure and good ASE performances.

Bright Emission at Reverse Bias After Trailing Edge of Driving Pulse in Wide InGaN Quantum Wells

In group‐III‐nitride quantum wells (QWs), a strong piezoelectric field is formed. A built‐in potential from the p–n junction is working in the opposite direction depending on an externally applied voltage. Furthermore, the electric field in the QW can be partially screened by a high charge carrier density. Herein, the influence of these effects on recombination and spectrum for over 10 nm wide InGaN QWs is investigated. The very low overlap of electrons and holes would suggest inefficient devices. However, it is shown that thick QWs can be more effective and reach high optical gain. This can be explained by the screening of the electric field, resulting in a high overlap of excited electron and hole states that enable lasing. Herein, a pulsed electrical excitation scheme is used, where carrier injection at forward bias and predominant recombination at zero or reverse bias are separated in time. The interplay between the piezoelectric field and the built‐in potential on carrier recombination in dependence on an external bias voltage is observed. In particular, a strong increase of the radiative recombination rate after the trailing edge of the driving pulse is observed.

Modelling of GaAsSb/InAs type-II QW heterostructure and simulation of its optical gain characteristics under (100), (001) and (110) directional pressure

A multi band (particularly, six band) k. p approach has been adopted for modelling the GaAsSb/InAs/AlSb W-shaped quantum well (QW)-heterostructure (a type-II with broken bandgap band alignment) and simulation of behaviour of optical gain characteristics under uni- and bi-axial pressures. The motivation behind designing such QW heterostructure is its high optical gain in MIR (mid infrared region) with noteworthy tuneable optical characteristics. The tuneable characteristics under uni-axial (100) and (001) pressure and bi-axial (110) pressure have been studied through the simplification of a multiband band k. p Hamiltonian. For all the directional pressures, the pressure range was fixed from 1 GPa to 3 GPa (with the interval of 0.5 GPa). For the (100) directional pressure, a significant increase in the gain (from 3570 to 7800/cm) was noted showing the red shifted wavelength with increasing order of pressure; while (001) directed pressure has caused to reduce the gain (3550–1158/cm) with red shifted wavelength. The (110) directed pressure has also caused to enhance the gain considerably (2550–7597/cm) with change in wavelength towards high wavelength. The study of gain characteristics was performed considering 1.5 × 1012 cm−2 2-D charge carrier density, which proves the tunability of the designed heterostructure in various tuneable optoelectronic devices.

1.8-µm laser operation based on femtosecond-laser direct written Tm:YVO4 cladding waveguides.

In this work, we have demonstrated tunable 1.8-µm laser operation based on a Tm:YVO4 cladding waveguide fabricated by means of femtosecond laser direct writing. Benefiting from the good optical confinement of the fabricated waveguide, efficient thulium laser operation, with a maximum slope efficiency of 36%, a minimum lasing threshold of 176.8 mW, and a tunable output wavelength from 1804 to 1830nm, has been achieved in a compact package via adjusting and optimizing the pump and resonant conditions of the waveguide laser design. The lasing performance using output couplers with different reflectivity has been well studied in detail. In particular, due to the good optical confinement and relatively high optical gain of the waveguide design, efficient lasing can be obtained even without using any cavity mirrors, thereby opening up new possibilities for compact and integrated mid-infrared laser sources.