High Optical Absorption Research Articles

Strain-induced changes of electronic and optical properties of Zr-based MXenes

Zr-based MXenes recently attracted attention because of its experimental preparation showing temperature stability, mechanical strength, and promising energy, sensoric, and electrochemistry applications. However, necessary theoretical predictions at a precise/predictive level are complicated due to essential excitonic features and strong electron correlation (i.e., a necessity to go beyond standard density functional theory, DFT). Contrary to the prevailing focus on oxygen-terminated MXenes and standard predictions of other Zr-based MXenes as conductors, based on the hybrid DFT and GW many-body perturbational theory, we were able to find seven different semiconductors (five of them for their equilibrium geometry and two others under slight tensile biaxial strain) in the case of two- and three-layered Zr2CT2 and Zr3C2T2 configurations with various terminations (T = O, F, S, Cl). We observed semiconductor-to-conductor transition induced by strain in the majority of such Zr-based MXenes at an experimentally achievable strain range. Furthermore, using the Bethe–Salpeter equation (BSE), we demonstrated that selected semiconducting Zr-based MXenes possess high optical absorption efficiency (20%–30%) in the visible light range, underscoring their potential in photonic applications. The high sensitivity of Zr-based MXenes to external conditions and functionalization combined with the thermal stability makes the materials promising for applications at operational temperatures in electronic and optical technologies.

Perovskite nanowire-based electrochemical sensing for selective and rapid detection of hydrogen peroxide

Nanowires possess inherent advantages in improving the reduction of boundary stacking defects and enhancing charge transfer or migration. Here, we synthesized all-inorganic perovskite nanowires CsPbBr3 (PVSK NW) and obtained CsPb1-xSnxBr3 (PVSK-Sn NW) and CsPb1-xGexBr3 (PVSK-Ge NW) nanowires through doping with different elements (Sn and Ge). Elemental doping endows the nanowires with unique narrow fluorescence spectra, high optical absorption coefficients, tunable optical bandgaps, and high carrier mobility. Introducing different perovskite nanowires into carbon-based composite materials (super p/Nafion) can overcome the challenges of hydrogen peroxide (H2O2) detection sensitivity and matrix interference. H2O2 in PBS (phosphate buffered saline) solution (pH 7.0) was detected by current analysis i-t curve mode. The results demonstrate that the addition of perovskite nanowires exhibits a high level of detection sensitivity for H2O2 electrochemical reduction. Particularly, the linear concentration range detected by PVSK-Sn NW is 1–6000 µM, with a detection limit of 0.12 µM. Even in the presence of interfering molecules (ascorbic acid, uric acid, glucose), the detection of H2O2 maintains high sensitivity and selectivity. This study overcomes the limitations of perovskite materials in water-based detection, enhancing their future commercial applications as sensing devices.

Seed-guided high-repetition-rate femtosecond laser oxidation for functional three-dimensional silicon structure fabrication

Laser oxidation provides a flexible maskless functional three-dimensional silicon structure fabrication strategy. Here, oxide layers are fabricated on silicon substrates by high-repetition-rate femtosecond laser irradiation. Formation mechanisms of the femtosecond laser oxidation are analyzed to tune the oxide layer morphology. When the laser fluence is high, the oxidation process is accompanied by laser ablation, so the oxide layer is always on top of laser ablated groove. To obtain the flat oxide layer, defect is firstly generated on silicon substrate by the laser irradiation at a high laser fluence of 126 mJ/cm2, function as a high optical absorption. It is called seed as it can assist to achieve lower fluence laser oxidation at 38 mJ/cm2 and result in a flat oxide layer. Full width at half-maximum of the oxide layer is also reduced. The laser fabricated oxide layers are used as etching masks. Three-dimensional silicon gratings are fabricated by deep reactive ion etching, which demonstrate desirable beam diffraction properties.

Monolayer Semiconductor Superlattices with High Optical Absorption.

Optical absorption plays a central role in optoelectronic and photonic technologies. Strongly absorbing materials are thus needed for efficient and miniaturized devices. A uniform film much thinner than the wavelength can only absorb up to 50% of the incident light when embedded in a symmetric and homogeneous environment. Although deviating from these conditions allows higher absorption, finding the thinnest possible material with the highest intrinsic absorption is still desirable. Here, we demonstrate strong absorption by artificially stacking WS2 monolayers into superlattices. We compare three simple approaches based on different spacer materials to surpass the peak absorptance of a single WS2 monolayer, which stands at 16% on ideal substrates. Through direct monolayer stacking without an intentional spacer, we reach an absorptance of 27% for an artificial bilayer, although with limited control over interlayer distance. Using a molecular spacer via spin coating, we demonstrate controllable spacer thickness in a bilayer with 25% absorptance while increasing photoluminescence thanks to doping. Finally, we exploit the atomic layer deposition of alumina spacers to boost the absorptance to 31% for a 4-monolayer superlattice. Our results demonstrate that monolayer superlattices are a powerful platform directly applicable to improve strong light-matter coupling and enhance the performance of nanophotonic devices such as modulators and photodetectors.

A more accurate investigation of XSiN[formula omitted] (X [formula omitted] Ca, Sr, Ba) using a DFT-1/2 scheme

In this work the electronic and optical properties of luminescent materials XSiN2 (X = Ca, Sr, Ba) were revisited based on density function theory (DFT) calculations with a newly developed DFT-1/2 scheme. It was found that the DFT-1/2 correction on nitrogen can well correct the band gaps to approach the experimental values, showing its advantage comparing to the Perdew–Burke–Ernzerhof (PBE) and the Strongly Constrained and Appropriately Normed (SCAN) functionals. Then the electronic band structures and optical properties of the three compounds were investigated using the DFT-1/2 scheme. Within the three compounds, the band gap shows a monotonic decrease along with the atomic number of alkali earth metal mainly due to the downshift of the conduction band edge, where the electronic conductivity is primarily based on electron since it shows a much smaller effective mass than hole. CaSiN2 owns more flat valence bands, while SrSiN2 gives lighter electron. Moreover, the three compounds show high optical absorption, but distinct behavior of light absorption and refractivity in specific energy range, suggesting their applications in optical applications.

Stability of Cesium-Based Lead Halide Perovskites under UV Radiation.

Lead halide perovskites have been extensively studied for their potential applications, including photodetectors, solar cells, and high-energy radiation detection. These applications are possible because of their unique optoelectronic properties, such as tunable band gap, high optical absorption coefficient, and unique defect self-healing properties, which result in high defect tolerance. Despite these advantages, the long-term stability remains a critical issue that could hinder commercial applications of these materials. Reports on the stability of lead halide perovskites for optoelectronic applications have normally focused on methylammonium (MA)/formamidinium (FA), with very limited information for other systems, in particular, Cs-containing perovskites. In this paper, we report the stability of thick CsPbBr3-x Cl x polycrystalline thin films (∼8 μm) with several halide Br-Cl ratios after exposure to deep UV radiation. The chemical, crystal structure, optical, and electrical properties are analyzed, and the results are used to propose a degradation mechanism. The chemical analysis on the surface and bulk of the films indicates the formation of cesium oxide after UV exposure, with no significant change in the crystalline structure. The proposed mechanism explains the formation of cesium oxides during UV exposure. The I-V characteristics of diode structures also showed significant degradation after UV exposure, primarily at lower diode rectification ratios. The mechanism proposed in this paper can contribute to developing strategies to enhance the long-term stability of inorganic lead halide perovskites under UV exposure.

Tunable photocatalytic and optoelectronic properties of SiTe/SiH heterostructure as a photocatalytic water splitting with high hydrogen production

The development of appropriate photocatalysts based on semiconductors is crucial for overcoming energy and environmental challenges. Especially, photocatalysts of water splitting are attractive nanomaterials. In the present work, a new β-SiTe/SiH van der Waals heterostructure has been produced by stacking the SiTe monolayer on top of the SiH monolayer. The electronic band structure, optical characteristics, photocatalytic capabilities and stability of the SiTe/SiH heterostructure were comprehensively examined based on the density functional theory. The obtained results indicated that biaxial strain is an effective strategy for improving the properties under consideration. These results demonstrated that the stable SiTe/SiH heterostructure exhibits a type II band alignment and possesses an indirect band gap of 1.725 eV/2.307 eV according to the PBE/HSE06 method. When the biaxial strain increases, the band gap of SiTe/SiH decreases linearly, reaching a minimum band gap when subjected to a strain of −6 %. Moreover, the SiTe/SiH heterostructure reveals an upward trend in optical properties within the visible spectrum, peaking in the visible and violet regions. Furthermore, the photocatalytic characteristics conserved at strains from −4% to +6 % because the band edges satisfy the reduction and oxidation standard potentials. A biaxial strain influence may be used to regulate the SiTe/SiH heterostructure, which smoothly enhances photogenerated carrier segregation. Consequently, the heterostructure is a perfect choice for photovoltaic application and photocatalysis due to its high optical absorption, and adjustable photocatalytic and electronic properties.

Sputter deposition of ZnO–AlN pseudo-binary amorphous alloys with tunable band gaps in the deep ultraviolet region

ZnO–AlN pseudo-binary amorphous alloys (a-ZAON hereinafter) with tunable band gaps in the deep ultraviolet (DUV) region have been synthesized using magnetron sputtering. The miscibility gap between ZnO and AlN has been overcome using room-temperature sputtering deposition, leveraging the rapid quenching abilities of sputtered particles to fabricate metastable but single-phase alloys. X-ray diffraction patterns and optical transmittance spectra revealed that the synthesized films with chemical composition ratios of [Zn]/([Zn] + [Al]) = 0.24–0.79 likely manifested as single-phase of a-ZAON films. Despite their amorphous structures, these films presented direct band gaps of 3.4–5.8 eV and thus high optical absorption coefficients (105 cm−1). Notably, the observed values adhered to Vegard’s law for crystalline ZnO–AlN systems, implying that the a-ZAON films were solid solution alloys with atomic-level mixing. Furthermore, atomic force microscopy analyses revealed smooth film surfaces with root-mean-square roughness of 0.8–0.9 nm. Overall, the wide-ranging band gap tunability, high absorption coefficients, amorphous structures, surface smoothness, and low synthesis temperatures of a-ZAON films position them as promising materials for use in DUV optoelectronic devices and power devices fabricated using large-scale glass and flexible substrates.

Effect of Annealing Process on the Morphological, Optical and Electrical Properties of Cu:MnO Films Prepared by PLD Technique

In this study, Nd:YAG laser pulses with a wavelength of 1064 nm, a power of 500 mJ, a pulse width of 9 ns, and a repetition frequency of 6 Hz were used to hit a manganese oxide (MnO) target surface 300 times. Pure MnO and copper Cu-doped MnO (Cu:MnO) with different amounts of Cu (0.03, 0.05, 0.07, and 0.09 wt%) produced by PLD were studied. Cu:MnO thin films were annealed at 473 K, and their morphological, optical, and electrical characteristics were studied. The results of the atomic force microscopic (AFM) investigation of morphological properties showed that Cu dopant impacted the creation of roughness and particle size in MnO2 films. The optical transmission was examined using a UV-Vis spectrophotometer. The highest optical absorption was noted at 0.09 dopant content. The dielectric constants' real (εr) and imaginary (εi) components, as well as the extinction coefficient (k), refractive index (n), and other optical constants, were studied. At an annealing temperature of (473 K), Hall effect studies demonstrate that all produced films exhibit a P-type conductivity.

Unveiling the molecular symphony - A DFT exploration of structure, electronic dynamics, and excited state electron transfer in D-π-A systems, enhanced by TeO2@GQD multi-junctions for solar energy conversion in DSSC

Graphene and graphene-derived materials have sparked a lot of interest because of their unique physico-chemical features, that have positioned graphene as a promising material for future opto-electronics, and energy-harvesting devices. Graphene possesses outstanding mechanical characteristics and chemical inertness, as well as great mobility and optical transparency. Single-layer graphene has a high optical transmissivity that allows it to pass through a wide variety of light wavelengths, making it a popular material for optically conducting windows. Graphene-based metal and metal oxide nanocomposites require substantial investigations to understand the fundamental interactions between nanostructures and the graphene surface in DSSC, for understanding the characteristic features of such nanocomposites. In the present study different donor-π-acceptor, systems were used, which are different in the type of the π –spacer units only. This D-π-A system was then decorated on a (TiO2)9 semiconductor leading to shifting of the absorption wavelength, the absorbed wavelength was further shifted upon interaction with tellurium–oxide@graphene, thereby exploring its application in solar energy harvesting devices. The result of such substitution was assessed in terms of various parameters such as highest occupied molecular orbital (HOMO), least unoccupied molecular orbital (LUMO), energy gap (Egap), maximum wavelength (λmax), the free energy of electron injection efficiency (ΔGinject), open-circuit voltage (Voc), reorganization energy (Δreorg), etc by the DFT method with Gaussian 09 set of codes. The study can prove beneficial for understanding the mechanism of high optical absorption over a broad spectrum in such multijunction systems, the feature which makes them promising materials for efficient optical, electronic, and light-harvesting devices.

Photovoltaic Cell Prepared from Nanoparticles of CdS/CdTe on ITO Substrate and its Characterization

CdS/CdTe based photovoltaic cell has shown the markable efficiency. The CdS/CdTe nanoparticles are being synthesized and deposited on the ITO glass plate. ITO glass has a large bandgap of about approximately 3.6 eV and is suitable to use in the fabrication of photovoltaic cell. As ITO behaves as negative terminal, it is used as front layer for capturing the light intensity. During fabrication of photovoltaic cell, the deposition of Cadmium sulphide and Cadmium telluride nanoparticles layer was done by brush painting technique. The CdS layer is used as window layer and CdTe acts as absorbing layer. The window layer’s primary function is to absorb light particularly in the visible region of the spectrum to generate electricity. The CdS layer forms p-n junction with the CdTe layer. The nanoparticles of CdS and CdTe have been synthesized first and optical characterization was carried out using UV-visible spectroscopy to obtain bandgap of CdTe and CdS. Structural characterization was being obtained by XRD. The size of the nanocrystallites of CdS and CdTe have been obtained by Debye Scherrer equation and the result was 1.64 nm and 4.09 nm respectively. The CdTe layer which was used as absorbing layer consists of high optical absorption coefficient with high mobility, good carrier lifetime and an enhanced properties of crystallographic. Silver paste was used as a back contact for good conduction.

Study of Fabrication Process and Performance Analysis of the CDS/CDTE Based Photovoltaic Cell

Fabrication of CDS/CDTE based heterojunction photovoltaic cell has been undertaken to explore better light conversion efficiency. We have developed a photovoltaic cell using glass coated with Indium doped Tin Oxide (ITO) which works as transparent conducting oxide (TCO). ITO coated glass has promising prospects of enhancing the efficiency of the photovoltaic cell. ITO layers are known to be employed as anode terminal due to the negative polarity they possess compared to the whole PV cell; here, we have employed it for the same function as the front layer. During fabrication of the photovoltaic cell, the deposition of nanoparticles of CDS and CDTE layer is undertaken through doctor-blade method. We have employed pure CDS as window layer for its high band gap of 3.8 eV (particle size: 8 nm) and CDTE as absorber layer due to its high optical absorption coefficient with high mobility, good carrier lifetime and enhanced crystallographic properties. The CDS window layer and CDTE absorber layer together constitute a p-n junction where the CDS window layer captures high intensity photons and transmits the photo-excited electron to CDTE absorber layer, thereby leading to photo-current output, which serves as a base to explore and test its further applications. To obtain band gap of respective CDTE and CDS nanoparticles, optical characterization is used. Silver paste is used as rear contact to form anode terminal having good conductivity and providing better mechanical support to the photovoltaic cell.

Tailoring the electronic and optical properties of ReS2 monolayer using strain engineering

In the present work, impact of various mechanical strains on the optoelectronic properties of monolayer ReS2 (m-ReS2) are investigated by using density functional theory. The bandgap of monolayer is determined to be 1.44 eV and 1.31 eV when computed using PBE and PBE + SOC methods. The monolayer displays outstanding electronic and optical tunability under biaxial compressive and shear strains. Under strain variations of 0 %–8 %, the bandgap for biaxial compression varies from 1.44 eV (1.31 eV) to 0.54 eV (0 eV), whereas for shear xx-yy strains, it varies from 1.44 eV (1.31 eV) to 0.34 eV (0.28 eV) when calculated using PBE (PBE + SOC) methods. A semiconductor-to-metal transition is observed for higher values of biaxial compressive strain. A pronounced impact of strain on the optical characteristics is likewise observed. We noticed that the absorption edge of monolayer ReS2 shifts from 1.32 eV to 0.50 eV with a 0 %–8 % increase in biaxial compression, leading to an 11 % red shift in wavelength per 1 % strain change. Moreover, high optical absorption (5 × 105 cm−1), lying from infrared to UV region is observed. The present study points out that strain engineering can be an efficient tool for modifying both the electronic and optical properties of m-ReS2 and may open new avenues for using this material in future optoelectronic applications.

Twin Irida Graphene: A Carbon Material with Optoelectronic Features

AbstractA novel allotrope structure of carbon named twin irida graphene composed of 3‐16‐8 carbon rings is proposed. Its structural, mechanical, electronic, and optical characteristics are explored by density functional theory. It is shown that twin irida graphene has an energetically favorable structure. Its dynamical and thermal stabilities at room temperature are also examined and confirmed. The in‐plane stiffness of twin irida graphene is less than graphene. It is a metal and maintains this property even against the external strain and applied electric field. This sheet exhibits an anisotropy response to the incident photon with different polarizations. The potential of sheet for use in energy storage and absorption systems is indicated by its high dielectric constant and optical absorption. The reflection constants as well as the transmission constants of twin irida graphene indicate its transparency, mostly in the high‐energy region. Thus, twin irida graphene is a suitable material for use in optoelectronic applications due to its structural and physical characteristics.

Strain modulated optical properties of MoSi2P4 monolayer – insights from DFT

Strain plays a very important role in tuning the properties of the materials for the desired applications. In the present work, we have investigated the variation of strain on the electronic and optical properties of a recently synthesized class of compound MoSi2P4 monolayer using the first principle methods. The MoSi2P4 monolayer is found to be dynamically and thermally stable at room temperature. The electronic structure of studied monolayer indicates a direct bandgap (at K-point) of 0.685 eV and 1.177 eV using the PBE and HSE06 hybrid functionals, respectively. To tune the electronic bandgap and optical properties, mechanical strain was applied (up to ±10%). A high optical absorption coefficient of the order of 105 cm−1 is observed. The absorption starts in the infrared and visible region covering a large part in the ultraviolet region. The absorption coefficient is found to decrease (increase) under tensile (compressive) strain. Our study indicates the potential application of MoSi2P4 monolayer in flexible optoelectronic devices for absorption and detection in the infrared, visible and ultraviolet region.

Thermophysical characterization and reliability analysis of binary composite nano doping on stearic acid-acetamide eutectic PCM

Organic phase change materials (PCM) have been extensively studied and employed for thermal energy storage applications, especially in the last decade. Wide range of melting temperature with high latent heat of fusion and absence of super cooling have made them highly desirable for energy storage applications, yet their intrinsic low thermal conductivity has been a major drawback in practical implementation. This study intends to address this and study the thermophysical characteristics of an organic PCM through composite nano doping. Stearic acid-acetamide eutectic PCM with a melting temperature of 65.73 °C and a latent heat of 203.72 J/g, was incorporated with a binary blend of Aluminum Oxide nanoparticles and multi-walled carbon nanotubes (MWCNT). The addition of metallic oxide and carbonaceous nanoparticles increased the melting temperature of the eutectic mixture by 2.9 °C and a highly advantageous increment in latent heat of fusion by 10% was observed, due to the improved molecular interaction introduced by the nanoparticles. Composite nano doping enhanced the thermal conductivity of the eutectic PCM by a 132.7% and also resulted in high optical absorption properties. The prepared eutectic mixtures were chemically stable and the eutectic PCM showed an improved final degradation temperature and thermal stability, with composite nano doping. Thermal reliability was analyzed through accelerated thermal cycling test and the eutectic mixtures could retain their thermal characteristics and chemical stability even after 500 thermal cycles. Composite nano doping proved to be a reliable thermophysical characteristics enhancement technique for organic eutectic PCM.

First principle calculations to explore the electronic, mechanical and optical properties of 2D NiX2 (X = O, S, Se) monolayers

This investigation employs ab-initio calculations to investigate the structural, dynamical, mechanical, and optoelectronic attributes of 1T-NiX2 (X = O, S, Se) monolayers. The confirmation of structural and dynamical stability is derived from negative cohesive energy values and the absence of negative frequencies in phonon dispersion spectra. Mechanical stability is established through the application of the Born-Huang stability criterion. Results indicate that an increase in the X-atom size from O to Se induces a reduction in material stiffness from 137.64 Nm−1 to 77.56 Nm−1 and thus, enhances the flexibility of the monolayers. The NiX2 monolayers exhibit indirect bandgap features with values 1.33 eV (1.81 eV), 0.63 eV (0.61 eV) and 0.28 eV (0.28 eV) using PBE (PBE+U) methods. Present results show an inverse relations between the band gap and the size of the X atom. The scanning tunnelling microscope (STM) images of 2D NiX2 monolayers are also simulated for experimental observations. Additionally, exploration of optical characteristics reveals high optical absorption (105 cm−1), which lies from infrared to UV-region. Moreover, NiO2 can be utilized as good wave anti-reflectors with reflection of incident light less than 7%. These results suggest NiX2 materials as promising candidates for diverse applications in optoelectronic and photovoltaic devices.

Investigating stress-induced effects on the multifaceted properties of cubic NaTaO3 perovskite oxide: prospects for advanced applications

This study explored the structural, optoelectronic, elastic, mechanical, and thermodynamic behaviour of NaTaO3 cubic perovskite oxide, under varying stress levels. Geometric property analysis reveals a decrease in lattice constants from 4.1 Å to 3.7 Å and cell volume from 71.1–53.4 Å3 as stress increases from 0 to 100 GPa. X-ray diffraction analysis indicated the stable cubic phase with slight peak shifts, demonstrating the material's structural flexibility. Electronic properties revealed an initial increase in the band gap (1.698 eV to 1.936 eV) with applied stress up to 60 GPa, which could be attributed to complex interactions within the material's electronic structure. Optical property analysis suggested that NaTaO3 possessed high optical absorption and conductivity, along with low reflectivity. Furthermore, elastic constants meeting the Born-stability condition (C11 – C12 > 0, C11 + 2C12 > 0, and C44 > 0) confirm the material's mechanical stability. Additional characteristics like the Poisson ratio, Cauchy pressure, and Frantsevich ratio highlighted the ductile and anisotropic nature of NaTaO3. Thermodynamic and phonon dispersion analysis suggested that NaTaO3 can withstand high-stress levels, evidenced by its elevated Debye temperature, indicating superior mechanical stability and increased resistance to thermal degradation. Based on these findings, NaTaO3 proposed as a potential candidate for photovoltaic and thermoelectric devices.

Photocatalytic activity and mechanism of YMnO3/NiO photocatalyst for the degradation of oil and gas field wastewater.

One-step hydrothermal method has been used to synthesize YMnO3@NiO (YMO@NO) photocatalysts with high photocatalytic activity for the degradation of oil and gas field wastewater under simulated solar irradiation. Through various characterization methods, it has been confirmed that the YMO@NO photocatalyst comprises only YMO and NO, without any other impurities. The microstructure characterization confirmed that the YMO@NO photocatalyst was composed of large squares and fine particles, and heterojunction was formed at the interface of YMO and NO. The optical properties confirm that the YMO@NO photocatalyst has high UV-vis optical absorption coefficient, suggesting that it has high UV-vis photocatalytic activity. Taking oil and gas field wastewater as degradation object, YMO@NO photocatalyst showed the highest photocatalytic activity (98%) when the catalyst content was 1.5g/L, the mass percentage of NO was 3%, and the irradiation time was 60min. Capture and stability experiments confirm that the YMO@NO photocatalyst is recyclable and electrons, holes, hydroxyl radicals and superoxide radicals play major roles in the photocatalysis process. Based on experiments and theoretical calculations, a reasonable photocatalytic mechanism of the YMO@NO photocatalyst is proposed.

Photoresponse in sequentially stacked antimony selenide thin films

Antimony selenide (Sb2Se3), a binary semiconducting compound has widespread research attention due to its excellent optoelectronic properties in the visible region and usefulness in applications such as solar cells, photosensors and photoelectrodes. The presented study explores the thickness dependent photoresponse in Sb2Se3 thin films, prepared by reactive selenization of antimony films having thickness values of ∼938 nm and ∼1879 nm when stacked second time. Growth orientation along [001] direction was achieved through carefully optimized selenization conditions to enable favourable charge transport in anisotropic Sb2Se3. Predominant Sb2Se3 formation was inferred from x-ray diffraction, Raman spectroscopy, secondary electron microscopy and energy-dispersive X-ray analyses. High optical absorption coefficient values of about 1 × 105 cm−1 and 5.7 × 104 cm−1 were observed for ∼938 nm and ∼1879 nm thick Sb2Se3 thin films. Further, the optoelectronic properties were elucidated through current–voltage and transient photoresponse measurements under dark and illumination conditions. The measurements were done under zero and different bias voltages. Sb2Se3 films having∼ 938 nm thickness exhibited self-driven photoresponse with a responsivity of 4.3×10−8 A W−1 and detectivity of 3.5 × 106 jones respectively, under AM 1.5 G illumination conditions.