High Hole Mobility Research Articles

Halogen-Bonded Hole-Transport Material Enhances Open-Circuit Voltage of Inverted Perovskite Solar Cells.

Interfacial properties of a hole-transport material (HTM) and a perovskite layer are of high importance, which can influence the interfacial charge transfer dynamics as well as the growth of perovskite bulk crystals particularly in inverted structure. The halogen bonding (XB) has been recognized as a powerful functional group to be integrated with new small molecule HTMs. Herein, a carbazole-based halo (iodine)-functional HTM (O1), is synthesized for the first time, demonstrating a high hole mobility and suitable energy levels that align well with those of perovskites. The strong interaction between O1 and perovskite, i.e., I···I-, induces the formation of an ordered interlayer, which are verified by both theoretical and experimental studies. Compared to the reference HTM (O2) without any halo-function, the XB-induced interlayer effectively enhances the interfacial charge extraction efficiency, while significantly hindering the non-radiative charge recombination by reducing the surface traps upon the strong passivation effect. This is reflected as a big increase in the open-circuit voltage by up to 114mV in the fabrication of inverted devices with the highest power conversion efficiency of 22.34%. Moreover, the ordered XB-driven interlayer at the interface of O1 and perovskite is mainly responsible for the extended lifespan under the operational conditions.

Band order reversal and valley engineering driving to dual high electron and hole mobility in strained monolayer BS

Strain engineering is an effective method to tune the physical properties of materials. In this work, we found that applying 5% biaxial compression to monolayer boron sulfur can simultaneously induce a band order reversal of valence bands and valley engineering of conduction bands. This change significantly enhances the room temperature intrinsic mobility, boosting it from 2 to 260 cm2 V−1 s−1 for holes and 63 to 543 cm2 V−1 s−1 for electrons. The high hole mobility surpasses that of bulk GaN and silicon. We further demonstrate that the valence band order reversal not only lifts the px/y state above the pz states, giving to a more dispersive highest valence band, and thus smaller electron scattering channels and hole effective mass, but also shifts the stronger σz bonding to weaker π-bonding characteristics, resulting in smaller electron–phonon coupling strength. Those combined effects results in a substantial increase in hole mobility.

High‐Efficiency Deep‐Blue Solution‐Processed Organic Light‐Emitting Diodes Using Carbazole Dendrons Modified Hybridized Local and Charge‐Transfer Emitters

In the pursuit of efficient and cost‐effective organic light‐emitting diodes (OLEDs), the development of solution‐processed hybridized local and charge transfer (HLCT) emitters presents a promising approach. HLCT materials uniquely integrate the advantages of both singlet and triplet excitons, surpassing the traditional spin statistical limit of 25% while offering high photoluminescence efficiency and balanced charge transport properties. Herein, we report the synthesis and characterization of two new deep blue, solution‐processable HLCT fluorophores, G1FTPI and G2FTPI. These compounds incorporate fluorenyl carbazole dendron units into the HLCT luminogenic triphenylamine‐phenanthroimidazole (TPI) molecule. Their HLCT and photoluminescence (PL) properties were experimentally and theoretically investigated using solvation effects and density functional theory (DFT) calculations. The molecules exhibit deep blue emission with a high solid‐state fluorescence quantum yield, good solution‐processed film‐forming quality, and high hole mobility values of 2.18 – 2.61 × 10‐6 cm2 V‐1s‐1. Both compounds were successfully employed as non‐doped emissive layers in solution‐processed OLEDs, demonstrating excellent electroluminescent (EL) performance. Notably, the G2FTPI‐based device emitted a deep blue light at 432 nm with CIE coordinates of (0.158, 0.098) and achieved a a maximum current efficiency (CEmax) of 3.13 cd A‐1 and a maximum external quantum efficiency (EQEmax) of 5.30%.

Quasi-Planar Core Based Spiro-Type Hole-Transporting Material for Dopant-Free Perovskite Solar Cells.

Hole-transporting material (HTMs) are crucial for obtaining the stability and high efficiency of perovskite solar cells (PSCs). However, the current state-of-the-art n-i-p PSCs relied on the use of 2,2',7,7'-tetrakis(N,N-di-p-methoxyphenylamine)-9,9'-spirobifluorene (spiro-OMeTAD) exhibit inferior intrinsic and ambient stability due to the p-dopant and hydrophilic Li-TFSI additive. In this study, a new spiro-type HTM with a critical quasi-planar core (Z-W-03) is developed to improve both the thermal and ambient stability of PSCs. The results suggest that the planar carbazole structure effectively passivates the trap states compared to the triphenylamine with a propeller-like conformation in spiro-OMeTAD. This passivation effect leads to the shallower trap states when the quasi-planar HTMs interact with the Pb-dimer. Consequently, the device using Z-W-03 achieves a higher Voc of 1.178 V compared to the spiro-OMeTAD's 1.155 V, resulting in an enhanced efficiency of 24.02 %. In addition, the double-column π-π stacking of Z-W-03 results in high hole mobility (~10-4 cm2 V-1 s-1) even without p-dopant. Moreover, when the surface interface is modified, the undoped Z-W-03 device can achieve an efficiency of nearly 23 %. Compared to the PSCs using spiro-OMeTAD, those with Z-W-03 exhibit enhanced stability under N2 and ambient conditions. This superior performance is attributed to the quasi-planar core structure and the presence of multiple CH/π and π-π intermolecular stacking in Z-W-03. The multiple CH/π and π-π intermolecular contacts of HTMs can improve the hole hopping transport. Therefore, it is imperative to focus on further molecular structure design and optimization of spiro-type HTMs incorporating quasi-planar cores and carbazole moieties for the commercialization of PSCs.

A Backgate for Enhanced Tunability of Holes in Planar Germanium.

Planar semiconductor heterostructures offer versatile device designs and are promising candidates for scalable quantum computing. Notably, heterostructures based on strained germanium have been extensively studied in recent years, with an emphasis on their strong and tunable spin-orbit interaction, low effective mass, and high hole mobility. However, planar systems are still limited by the fact that the shape of the confinement potential is directly related to the density. In this work, we present the successful implementation of a backgate for a planar germanium heterostructure. The backgate, in combination with a topgate, enables independent control over the density and the electric field, which determines important state properties such as the effective mass, the g-factor, and the quantum lifetime. This unparalleled degree of control paves the way toward engineering qubit properties and facilitates the targeted tuning of bilayer quantum wells, which promise denser qubit packing.

Quasi‐Planar Core Based Spiro‐Type Hole‐Transporting Material for Dopant‐Free Perovskite Solar Cells

AbstractHole‐transporting material (HTMs) are crucial for obtaining the stability and high efficiency of perovskite solar cells (PSCs). However, the current state‐of‐the‐art n‐i‐p PSCs relied on the use of 2,2′,7,7′‐tetrakis(N,N‐di‐p‐methoxyphenylamine)‐9,9′‐spirobifluorene (spiro‐OMeTAD) exhibit inferior intrinsic and ambient stability due to the p‐dopant and hydrophilic Li‐TFSI additive. In this study, a new spiro‐type HTM with a critical quasi‐planar core (Z‐W‐03) is developed to improve both the thermal and ambient stability of PSCs. The results suggest that the planar carbazole structure effectively passivates the trap states compared to the triphenylamine with a propeller‐like conformation in spiro‐OMeTAD. This passivation effect leads to the shallower trap states when the quasi‐planar HTMs interact with the Pb‐dimer. Consequently, the device using Z‐W‐03 achieves a higher Voc of 1.178 V compared to the spiro‐OMeTAD's 1.155 V, resulting in an enhanced efficiency of 24.02 %. In addition, the double‐column π–π stacking of Z‐W‐03 results in high hole mobility (~10−4 cm2 V−1 s−1) even without p‐dopant. Moreover, when the surface interface is modified, the undoped Z‐W‐03 device can achieve an efficiency of nearly 23 %. Compared to the PSCs using spiro‐OMeTAD, those with Z‐W‐03 exhibit enhanced stability under N2 and ambient conditions. This superior performance is attributed to the quasi‐planar core structure and the presence of multiple CH/π and π–π intermolecular stacking in Z‐W‐03. The multiple CH/π and π–π intermolecular contacts of HTMs can improve the hole hopping transport. Therefore, it is imperative to focus on further molecular structure design and optimization of spiro‐type HTMs incorporating quasi‐planar cores and carbazole moieties for the commercialization of PSCs.

Reaxff MD Analysis of Substrate Material Properties into Oxide Films during Thermal Oxidation Process of Group IV Semiconductor Materials

Oxide films used in semiconductor devices have attracted much attention because they can protect substrate surfaces from impurities and suppress current loss. In recent years, there have been growing expectations for oxide film formation on Ge substrate materials, which have a uniquely high hole mobility among group IV semiconductor materials. We have investigated an efficient oxide film formation method using reactive molecular dynamics (ReaxFF MD) simulation. We focused on dissociation, the initial step of oxidation, and confirmed how easily dissociation occurs. To search for conditions that promote dissociation, we checked the dangling bound density and adsorption angle on the substrate surface. The wider space between dimers on the Ge substrate may result in a shallower O2 adsorption angle. This increases the dissociation rate because each of the two O2 atoms is more likely to bond to the substrate.

Antiferromagnetic Frustration Behavior with Face-Sharing CuAs4 Tetrahedrons in Conducting ACu6As3 (A = Li and Na).

New mixed-valence copper pnictides ACu6As3 (A = Li and Na) adopt a quasi-2D structure type, featuring alkalis and [Cu6As3]- slabs along the c-axis alternatively. The face-sharing connection between CuAs4 polyhedra leads to a higher valence state for the inside Cu ions than that of Cu ions with the other connectivity way. This is confirmed by X-ray photoemission spectroscopy results. The Cu2+ with near spin 1/2 located on bilayer triangular lattice is found to exhibit a peculiar hump in magnetic susceptibility along the c-axis and, most strikingly, nearly a constant at low temperatures from 1.8 K down to 0.4 K. Besides, high hole mobilities, 68.58 and 645.16 cm2 V-1 S-1, are observed in LiCu6As3 and NaCu6As3, respectively. These compounds provide a novel material system for researching the relationship among structure, valence state, and spin correlation in frustrated lattice.

Pure Hexagonal Diamond with Symmetry-Doping Properties.

The difficulties in asymmetrical doping of wide band gap materials, especially for the n-type diamond challenge, hamper their application in electronic devices. Here, we propose doping diamond polytypes with reasonable band structures to solve this problem. Various elements are doped into six diamond polytypes, and their doping behaviors are investigated. The results show that pure hexagonal (2H) diamond has the band gap with a value of 4.42 eV and the smallest carrier effective masses among six calculated diamond polytypes, exhibiting high electron mobility and hole mobility up to 4250 and 5840 cm2·V-1·s-1, respectively. Compared to cubic (3C) diamond, the impurity formation energy in 2H-diamond is reduced, which is attributed to its C3v symmetry. More importantly, 2H-diamond exhibits favorable doping symmetry with a donor level of 0.14 eV for phosphorus and an acceptor level of 0.19 eV for boron, respectively, which originate from smaller effective masses and stronger delocalization at the band edge in 2H-diamond. These ionization energies are smaller than those in 3C-diamond of 0.32 and 0.58 eV, respectively. This reveals that phosphorus and boron in 2H-diamond are more easily excited at room temperature, producing good n- and p-type conductivities. All of these make 2H-diamond a potential candidate for the replacement of 3C-diamond as a wide band gap material theoretically. These provide a way to realize high-quality n-type diamond, giving significant insights into the realization of diamond-based electronic devices. This also supplies a solution for the difficulties in asymmetric doping of other wide band gap materials.

Transparent p-type copper iodide for next-generation electronics: fundamental physics and recent research trends

Development of transparent and flexible p -type semiconductors has been a significant challenge for scientific curiosity and industrial interest. Unlike n -type metal oxide semiconductors, such as zinc oxide (ZnO), In2O3, and SnO2, transparent p -type oxide semiconductors have suffered from low optical transparency and poor electrical performance. To overcome the intrinsic limitation of p -type oxide semiconductors, copper iodide (CuI) is gaining attention as a multifunctional p -type semiconductor with excellent optical transparency, decent mechanical flexibility, high hole mobility, high electrical conductivity, and even promising thermoelectric performance. Here, we present the recent progress of CuI-based transparent p -type electronics from materials to applications. In this review, we summarize the physical and chemical properties of CuI by reviewing computational studies, focusing on the band structure, intrinsic defects, and promising dopants. Additionally, various applications of CuI, including its use as active layers, hole transport layers (HTLs), transparent electrodes, and energy harvesters, are examined, highlighting important studies and their findings. Strategies to enhance device performance, such as controlling carrier concentrations and refining fabrication methods, are discussed, offering insights for developing next-generation electronic devices. Finally, we discuss current challenges and perspective opportunities of CuI-based transparent p -type electronics.

In-plane anisotropic dispersion property and second-harmonic generation of violet phosphorus with two-dimensional nano-interlocking structure

The unique one-dimensional chain structure of violet phosphorus provides an ideal platform for the study of second-order nonlinear optical properties. This also offers more possibilities for the further development of novel two-dimensional layered nanomaterials in the frequency domain. The research suggest that the highest occupied molecular orbital of monolayer phosphorene is characterized by a small effective mass and high hole mobility, while the lowest unoccupied molecular orbital exhibits opposite properties. This may be attributed to increased lattice scattering or electron-electron interactions in the conduction band. Monolayer violet phosphorus exhibits strong absorption capabilities in the near-ultraviolet light range, which can be utilized in UV spectroscopy technology for detecting harmful substances in water and air. Besides, its second harmonic generation response is also very strong within the visible light spectrum, and this response significantly varies with changes in angle. This provides theoretical guidance for optimizing the different stacking directions and heterojunction structures of violet phosphorus, more importantly, the sensitivity and directional selectivity of sensors can be improved. The work not only deepens the understanding of the electro-optical performance of violet phosphorus materials but also lays a theoretical foundation and guidance for the design and application of devices based on violet phosphorus.

Solution-processed NO2 gas sensor based on poly(3-hexylthiophene)-doped PbS quantum dots operable at room temperature

The global industrial development and increase in the number of transportation vehicles, such as automobiles and ships, have led to a steady increase in the issues related to greenhouse gas emissions. NO2 is a greenhouse gas emitted in large quantities from automobiles and factories, and its emission is unavoidable in the modern world. Therefore, a sensor capable of precise detection of NO2 is required. The most commonly reported types of NO2 sensors are those based on metal oxides. However, their operation at room temperature is impossible owing to their high-temperature operating characteristics, and therefore, a heater must be designed inside or installed outside the sensor for heating. Meanwhile, NO2 sensors based on PbS quantum dots (QDs) are advantageous as they can operate at room temperature and can be easily manufactured through a solution process rather than a complicated semiconductor process. Herein, a NO2 sensor was fabricated by doping PbS QDs with poly(3-hexylthiophene) (P3HT). The as-developed sensor exhibited high responsivity to 100–0.4-ppm NO2 gas with a resolution of 200 ppb owing to the stability of the thin film and high hole mobility of P3HT.

Improvement of Perovskite Solar Cells Efficiency by Management of the Electron Withdrawing Groups in Hole Transport Materials: Theoretical Calculation and Experimental Verification.

Management of functional groups in hole transporting materials (HTMs) is a feasible strategy to improve perovskite solar cells (PSCs) efficiency. Therefore, starting from the carbazole-diphenylamine-based JY7 molecule, JY8 and JY9 molecules are incorporated into the different electron-withdrawing groups of fluorine and cyano groups on the side chains. The theoretical results reveal that the introduction of electron-withdrawing groups of JY8 and JY9 can improve these highest occupied molecular orbital(HOMO)energy levels, intermolecular stacking arrangements, and stronger interface adsorption on the perovskite. Especially, the results of molecular dynamics (MD) indicate that the fluorinated JY8 molecule can yield a preferred surface orientation, which exhibits stronger interface adsorption on the perovskite. To validate the computational model, the JY7-JY9 are synthesized and assembled into PSC devices. Experimental results confirm that the HTMs of JY8 exhibit outstanding performance, such as high hole mobility, low defect density, and efficient hole extraction. Consequently, the PSC devices based on JY8 achieve a higher PCE than those of JY7 and JY9. This work highlights the management of the electron-withdrawing groups in HTMs to realize the goal of designing HTMs for the improvement of PSC efficiency.

Exploring the potential of end-capping acceptor designing on highly soluble and efficient Schiff-based Hole-Transporting materials for High-Efficiency perovskite solar cells

Photovoltaic materials, especially perovskite solar cells (PSCs) are promising candidates for rising global energy demands. Here, five phenothiazine-based hole-transporting materials (AZOM1, AZOM2, AZOM3, AZOM4, and AZOM5) are designed by Schiff base chemistry with A-π-D-π-A framework for PSCs. We executed density functional theory calculations to explore the electronic, photo-physical, photovoltaic, and charge-transporting properties of the studied hole-transporting materials (HTMs). Our results indicate that AZOM1-AZOM5 HTMs possess more negativeHOMO energies (−5.64 to − 5.49 eV), lower bandgaps, and superior solubility as compared to Spiro-OMeTAD (HOMO energy = − 4.47 eV) and reference AZO-II (HOMO energy = − 4.68 eV), which enhanced their hole extraction and open-circuit photo-voltage (VOC). The transition density matrix and hole-electron distribution analyses show that AZOM1- AZOM5 molecules have ultrafast charge transmission, low overlapping between holes and electrons, and a higher dissociation rate than the Spiro-OMeTAD and AZO-II HTMs. The designed HTMs have smaller exciton binding energies than the Spiro-OMeTAD and AZO-II, allowing electron-hole pairs to dissociate into positive and negative charges smoothly. AZOM1-AZOM5 HTMs have higher hole charge transfer integral than the AZO-II, facilitating high hole mobility in PSCs. All designed HTMs have higher VOC (1.49 to 1.64 V) and lower energy losses (0.63 to 1.03 eV) than the Spiro-OMeTAD and AZO-II HTMs. Moreover, the AZOM1-AZOM5 HTMs demonstrated deeper HOMO energies, high solubility, more stability, and high open-circuit photo-voltages than the recently reported HTMs at “MPW1PW91/6-31G (d, p)” level of theory. Overall, the AZOM1-AZOM5 HTMs are very effective in boosting the solubility, charge-transporting ability, and efficiency of PSCs.

Excellent Hole Mobility and Out-of-Plane Piezoelectricity in X-Penta-Graphene (X = Si or Ge) with Poisson's Ratio Inversion.

Recently, the application of two-dimensional (2D) piezoelectric materials has been seriously hindered because most of them possess only in-plane piezoelectricity but lack out-of-plane piezoelectricity. In this work, using first-principles calculation, by atomic substitution of penta-graphene (PG) with tiny out-of-plane piezoelectricity, we design and predict stable 2D X-PG (X = Si or Ge) semiconductors with excellent in-plane and out-of-plane piezoelectricity and extremely high in-plane hole mobility. Among them, Ge-PG exhibits better performance in all aspects with an in-plane strain piezoelectric coefficient d11 = 8.43 pm/V, an out-of-plane strain piezoelectric coefficient d33 = -3.63 pm/V, and in-plane hole mobility μh = 57.33 × 103 cm2 V-1 s-1. By doping Si and Ge atoms, the negative Poisson's ratio of PG approaches zero and reaches a positive value, which is due to the gradual weakening of the structure's mechanical strength. The bandgaps of Si-PG (0.78 eV) and Ge-PG (0.89 eV) are much smaller than that of PG (2.20 eV), by 2.82 and 2.47 times, respectively. This indicates that the substitution of X atoms can regulate the bandgap of PG. Importantly, the physical mechanism of the out-of-plane piezoelectricity of these monolayers is revealed. The super-dipole-moment effect proposed in the previous work is proved to exist in PG and X-PG, i.e., it is proved that their out-of-plane piezoelectric stress coefficient e33 increases with the super-dipole-moment. The e33-induced polarization direction is also consistent with the super-dipole-moment direction. X-PG is predicted to have prominent potential for nanodevices applied as electromechanical coupling systems: wearable, ultra-thin devices; high-speed electronic transmission devices; and so on.

A Perspective on tellurium-based optoelectronics

Tellurium (Te) has been rediscovered as an appealing p-type van der Waals semiconductor for constructing various advanced devices. Its unique crystal structure of stacking of one-dimensional molecular chains endows it with many intriguing properties including high hole mobilities at room temperature, thickness-dependent bandgap covering short-wave infrared and mid-wave infrared region, thermoelectric properties, and considerable air stability. These attractive features encourage it to be exploited in designing a wide variety of optoelectronics, especially infrared photodetectors. In this Perspective, we highlight the important recent progress of optoelectronics enabled by Te nanostructures, which constitutes the scope of photoconductive, photovoltaic, photothermoelectric photodetectors, large-scale photodetector array, and optoelectronic memory devices. Prior to that, we give a brief overview of basic optoelectronic-related properties of Te to provide readers with the knowledge foundation and imaginative space for subsequent device design. Finally, we provide our personal insight on the challenges and future directions of this field, with the intention to inspire more revolutionary developments in Te-based optoelectronics.

Liquid phase exfoliation of few-layer borophene with high hole mobility for low-power electronic devices

Borophene, the two-dimensional allotrope of boron, has garnered significant interest in recent years due to its exceptional electronic, mechanical, and optical properties. In this work, an environment-friendly green approach has been utilized to synthesize p-type borophene, which consists of few layers as evidenced by electron and atomic force microscopic images. The Raman analysis indicated that these borophene layers possess β12 and χ3 phases. The photoemission spectra of these samples exhibit single exponential decay with a long lifetime of 7.2 µsec, showcasing its potential as a phosphorescent material in optoelectronics and quantum technologies. The photo-sensing capability of borophene was investigated by fabricating a Si/SiO2/Borophene/Ti/Pt photo-detector, which achieved an external quantum efficiency of 31 %, maximum photo responsivity of 200 mAW−1 and detectivity of 8.7x1011 Jones. Hall effect van der Pauw measurements revealed the p-type conductivity of the borophene film, along with a high hole mobility of 931.44 cm2V-1s−1 and a charge carrier density of 2 x 1012 cm−3, rendering these layers suitable for high-speed and low power electronic devices. This work emphasizes the importance of novel 2D materials like borophene with exceptional optoelectronic characteristics for developing future low-power electronic devices with remarkable performance.

Wafer-scale Te thin film with high hole mobility and piezoelectric coefficients

p-type semiconductors are significant for integrated nanoelectronics. Tellurium (Te), a mono-elemental material, is a p-type semiconductor with high mobility. Its outstanding performance renders it widely applicable in the fields of electronics and optoelectronics. However, the wafer-scale fabrication of Te thin films is challenging. In this study, we reported an ion-bean sputtered Te thin film and investigated the effects of annealing temperatures. Annealing-induced crystallization kinetics were assessed through Raman spectroscopy, x-ray diffraction, and atomic force microscopy. After annealing, the film's conductivity increased from 10−5 to 10−4 S and mobility from 18 to 53 cm2 V−1 s−1. Dual AC resonance tracking switching spectroscopy piezoelectric force microscopy is used to investigate piezo/ferroelectric properties. The coercive voltages are −2 and 4 V respectively, and the effective piezoelectric coefficient (d33) is 40 pm/V. Butterfly and phase-switching loops demonstrate its possible ferroelectricity. The Te thin film has potential applications in optoelectronics, nonvolatile memory devices, and neuromorphic computation.

Constructed black phosphorus quantum dots/BiVO4 Z-scheme heterojunction catalysis for efficient Rhodamine b degradation and DFT study

Black phosphorus (BP) is highly regarded in photocatalysis for its bandgap thickness dependency, high hole mobility, and broad visible light absorption. This study introduces a simple hydrothermal method to construct a BP QDs/BiVO4 direct Z-scheme heterojunction. The composite’s crystal structure, morphology, and photochemical properties were comprehensively characterized. The photocatalytic activity was evaluated using Rhodamine B (RhB) degradation under visible light. Notably, BP QDs0.12%/BiVO4 exhibited exceptional performance, achieving a 95.4 % RhB degradation after 100 min, three times higher than BiVO4 alone. The direct Z-scheme heterojunction played a pivotal role in facilitating O2− and h+ involvement in the degradation process. The interfacial interaction between BP QDs and BiVO4 significantly enhanced BiVO4′s visible light absorption, preserving its strong oxidation–reduction capacity. This enhancement was further corroborated by DFT simulation calculations. Overall, this study presents a novel approach for constructing efficient Z-scheme photocatalysts based on BP QDs, laying a solid foundation for their application in the field of photocatalytic degradation.

A universal hole transport layer for efficient organic solar cells processed by blade coating

Doctor-blade coating technology is a roll-to-roll compatible high-throughput thin film fabrication route. In this work, doctor-blading was applied for fabricating organic solar cells (OSCs) using a polyoxometalates material phosphomolybdic acid (PMA) as a hole transport layer (HTL). Compared to PEDOT:PSS, PMA-based devices demonstrate lower trap-assisted recombination, higher hole mobility, prolonged charge carrier lifetime and faster charge collection. With PM6:Y6 as active layer, PMA-based device delivered a high power conversion efficiency (PCE) of 17.79 % with a boosted short-circuit current density (JSC) value of 28.08 mA/cm2, which is one of the best performances for PM6:Y6-based solar cells through doctor-blading process. In addition, the performance improvement was observed in both conventional and inverted structured devices with various donor: acceptor combinations. These results indicate the high universality of PMA for printable processing and its prospect in preparation of the industrial production of OSCs.