High-k Dielectric HfO2 Research Articles

Oxygen defects and Fermi level location in metal-hafnium oxide-silicon structures

We describe an in situ method for measuring the band bending of Si substrates in complex metal-oxide-semiconductor systems using femtosecond pump-probe photoelectron spectroscopy. Following deposition of metal layers (Pt, Re, or Re oxide) on the high-k dielectric HfO2, measurement of the band bending in the underlying Si provides a direct determination of the location of the Fermi level within the Si band gap at the Si-dielectric interface. Changes in the Fermi level with post-deposition anneals and oxygen exposure were correlated with valence and core photoelectron spectroscopy as well as capacitance-voltage measurements. These studies illuminate the roles that gate metal work function, modified by metal induced gap states and defects within the oxide, such as oxygen vacancies, play in defining the location of the Fermi level in metal-oxide-semiconductor structures.

SELF-CONSISTENT SIMULATION OF QUANTUM DOT FLASH MEMORY DEVICE WITH SiO2 AND HfO2 DIELECTRICS

Flash memory structure in which a silicon quantum dot embedded in the gate dielectric region between the channel and the control gate is considered. A self-consistent simulation for such memory devices is performed and aims to understand the relationship between the device structure and the meaningful quantities, as required for an efficient device operation. In this study, both the traditional SiO2 and HfO2 high-k dielectrics are being explored, and their results are compared and contrasted. In particular, the superiority of HfO2 over the SiO2 is demonstrated through various interlocking investigations on the relationships between the tunneling current, dielectric thickness, barrier height, programming and retention times.

Thin HfO2 films grown on Si(100) by atomic oxygen assisted molecular beam epitaxy

Thin high-k dielectric HfO2 films are deposited on Si(100) substrate by molecular beam epitaxy using Hf and atomic oxygen source. The composition of the film is determined to be stoichiometric HfO2. The very flat surface of the deposited film with a root mean square roughness less than 0.16nm without any visible pin holes down to the nanometer size can be reached. The film maintains good thermal stability after annealing at 900°C for 15min in N2 ambient. The refractive index of the film is 1.89 with a negligible extinction coefficient in the visible wavelength region and the dielectric constant is around 19. A low leakage current of 1.61×10−3A∕cm2 at −2V bias is achieved for a film with the equivalent oxide thickness of 2.4nm after annealing.

Electrical and spectroscopic comparison of HfO2/Si interfaces on nitrided and un-nitrided Si(100)

The interfacial chemistry of the high-k dielectric HfO2 has been investigated on nitrided and un-nitrided Si(100) using x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS). The samples are prepared by sputter depositing Hf metal and subsequently oxidizing it. A 600 °C densification anneal is critical to completing Hf oxidation. These spectroscopic data complement electrical testing of metal oxide semiconductor capacitors fabricated with ∼50 Å HfO2 on nitrided and un-nitrided Si(100). Capacitors with interfacial nitride show reduced leakage current by a factor of 100 at a −1 V bias. Concurrently, interfacial nitride increased capacitance 12% at saturation. XPS shows that an interfacial layer composed of nonstoichiometric hafnium silicate (HfSixOy), forms at both the HfO2/Si and HfO2/SiNx interfaces. Differences in the Si 2p and O 1s XP spectra suggest more silicate forms at the un-nitrided interface. HfO2 films on un-nitrided Si show more O 1s and Si 2p photoemission intensity characteristic of HfSixOy. SIMS depth profiles through the buried interface are consistent with interfacial silicate formation, as shown by a HfSiO+ ion signal, that is sandwiched between HfO2 and SiNx. SiNx is suggested to minimize interfacial HfSixOy formation by limiting the amount of Si available to interact with the HfO2 layer.

Thermodynamic stability of high-K dielectric metal oxides ZrO2 and HfO2 in contact with Si and SiO2

We present theoretical and experimental results regarding the thermodynamic stability of the high-k dielectrics ZrO2 and HfO2 in contact with Si and SiO2. The HfO2/Si interface is found to be stable with respect to formation of silicides whereas the ZrO2/Si interface is not. The metal–oxide/SiO2 interface is marginally unstable with respect to formation of silicates. Cross-sectional transmission electron micrographs expose formation of nodules, identified as silicides, across the polycrystalline silicon/ZrO2/Si interfaces but not for the interfaces with HfO2. For both ZrO2 and HfO2, the x-ray photoemission spectra illustrate formation of silicate-like compounds in the MO2/SiO2 interface.

Spectroscopic ellipsometry characterization of high-k dielectric HfO2 thin films and the high-temperature annealing effects on their optical properties

The optical properties of a set of high-k dielectric HfO2 films annealed at various high temperatures were determined by spectroscopic ellipsometry. The results show that the characteristics of the dielectric functions of these films are strongly affected by high temperature annealing. For a sample annealed at 600 °C, the film becomes polycrystalline, and its dielectric function displays a distinctive peak at 5.9 eV. On the other hand, the film remains amorphous without the 5.9 eV feature after 500 °C annealing. To model the dielectric functions, the Tauc–Lorentz dispersion was successfully adopted for these amorphous and polycrystalline films. The absorption edge was observed to shift to a higher energy at a high temperature annealing. Defects in the films were shown to relate to the appearance of a band tail above the absorption edge, and they appear to diminish with high temperature annealing.

Thermodynamic Stability of High-K Dielectric Metal Oxides ZrO2 and HfO2 in Contact with Si and SiO2

AbstractWe present experimental results regarding the thermodynamic stability of the high-k dielectrics ZrO2 and HfO2 in contact with Si and SiO2. The HfO2/Si interface is found to be stable with respect to formation of silicides whereas the ZrO2/Si interface is not. The metal oxide/SiO2 interface is marginally unstable with respect to formation of silicates. Cross-sectional transmission electron micrographs expose formation of nodules, identified as silicides, across the polysilicon/ZrO2/Si interfaces but not for the interfaces with HfO2. For both ZrO2 and HfO2, the X-ray photoemission spectra illustrate formation of silicate-like compounds in the MO2/SiO2 interface.