Blooming occurs in silicon-vidicon targets because more hole-electron pairs are created at a given point by the incident light signal than can be removed by the action of the scanning electron beam. The excess carriers move laterally in the target through diffusion and, as a result, the blooming has the following properties- 1) the Slope of the blooming curve on semilog paper does not depend on the size of the incident light spot, i.e., at a given overload intensity, all circular spot sizes add the same excess amount to their radii; 2) the radius of a bloomed spot increases linearly with the log of the incident intensity; 3) the Slope of the blooming curve does not depend on beam current; however, the intensity at which the blooming begins does depend directly on the beam current. At very high incident-light intensities, a dramatic increase in the blooming is observed. This can be attributed to diffusion under conditions where the minority carrier level has become equal to the majority carrier level.
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