High Field Effect Research Articles

Effect of High Magnetic Field on Microstructure Evolution, Solute Distribution, and Crystallography in Directionally Solidified Cu–Ge Peritectic Alloy

Effect of High Magnetic Field on Microstructure Evolution, Solute Distribution, and Crystallography in Directionally Solidified Cu–Ge Peritectic Alloy

Effect of Intercalated LiF on Interface Contact Characteristics of MoS2 Field Effect Transistor: A First‐Principles Study

AbstractBased on the first‐principles calculation, the effect of intercalated LiF on the contact characteristics of the interface between Au electrode and MoS2 layer is studied. It is found that adding LiF film can change the contact type between metal electrode Au and MoS2 layer from Schottky contact to ohmic contact, which is accompanied by interfacial charge transfer from LiF layer to MoS2 layer and the downward movement of d (dxy and dz2) orbital of Mo atom and p (px and py) orbital of S atom to Fermi level. And the interlayer spacing between LiF layer and Au electrode has a great impact on the interface contact characteristics. The electric field effect and stress effect of interface contact of Au, LiF and MoS2 (Au/LiF/MoS2)is more obvious than that of interface contact of Au and MoS2 (Au/MoS2). Au/LiF/MoS2 shows ohmic contact with the interlayer spacing between Au layer and LiF layer less than 3.05 Å and with the electric field less than 0.15 VÅ−1, respectively, while Au/MoS2 still shows N‐type Schottky contact. These findings are helpful to control the contact resistance and have guiding significance for high performance MoS2 field effect transistor and other electronic components.

Structural Optimized H-Gate High Schottky Barrier Bidirectional Tunnel Field Effect Transistor

In this work, we proposed a structural optimized H-shaped gate bidirectional tunnel field effect transistor with high on-state current based on high Schottky barrier plug-in source–drain contacts and central assistant gate (H-Gate HSB-BTFET). Compared to the previously proposed high Schottky barrier bidirectional tunnel field effect transistor (HSB-BTFET), the proposed H-Gate BTFET achieves excellent switching characteristics such as better forward on-state current, lower subthreshold swing (SS), lower power consumption, higher Ion–Ioff ratio, and lower band to band tunneling (BTBT) induced leakage. The physical mechanism of device performance improvement is explained, analyzed, and compared with HSB-BTFET. In addition, no more complex process technology and expensive millisecond annealing process are needed; the proposed H-Gate BTFET can be used as an alternative candidate for mainstream integration technology.

Aligned Indium Oxide Nanofiber to Achieve High Mobility and High Stability Field-Effect Transistor

Indium oxide (In <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{\text{2}}$</tex-math> </inline-formula> O <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{\text{3}}\text{)}$</tex-math> </inline-formula> is a metal–oxide–semiconductor material with excellent performance. Due to its very large carrier mobility, it is considered a suitable choice for the fabrication of field-effect transistors (FETs). In this report, aligned nanofibers were prepared by electrospinning process, and the performance of In <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{\text{2}}$</tex-math> </inline-formula> O <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{\text{3}}$</tex-math> </inline-formula> nanofiber FET was adjusted by controlling the electrospinning time. The results show that the FET based on aligned In <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{\text{2}}$</tex-math> </inline-formula> O <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{\text{3}}$</tex-math> </inline-formula> nanofibers exhibits excellent electrical properties at an electrospinning time of 2 min, including the mobility ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu$</tex-math> </inline-formula> FE) of 11.52 cm <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$^{\text{2}}$</tex-math> </inline-formula> /Vs, switching current ratio ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\textit{I}_{\text{on}}$</tex-math> </inline-formula> / <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\textit{I}_{\text{off}}\text{)}$</tex-math> </inline-formula> of 2.5 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\times$</tex-math> </inline-formula> 10 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$^7$</tex-math> </inline-formula> , and subthreshold swing (SS) of 0.36 V/dec, and it shows good stability under positive bias stress (PBS). This method of preparing aligned metal–oxide nanofibers by electrospinning to achieve FET with high performance, low power consumption, and high stability is very suitable.

Molecular Dynamics Simulation of High-Field Effects in the Mobility of Protonated Poly(ethylene oxide)s in a Gas

Molecular Dynamics Simulation of High-Field Effects in the Mobility of Protonated Poly(ethylene oxide)s in a Gas

Preface

The 2022 8th International Forum on Manufacturing Technology and Engineering Materials (IFEMMT 2022) was successfully held on October 14th-16th, 2022 in Chongqing, China (virtual conference). IFEMMT 2022 brought together academics and experts in the field of Manufacturing Technology and Engineering Materials to a common forum, making it a great platform for people to share views and experiences in related areas.We were honored to have Prof. Xiansheng Ning from Shenyang Ligong University, China to serve as our General Conference Chair. The conference covered keynote speeches, oral presentations, and online Q&A discussion, attracting 150 individuals. Firstly, keynote speakers were each allocated 30-45 minutes to hold their speeches. Then in the oral presentations, the excellent papers selected were presented by their authors in sequence.During the conference, five sophisticated professors were invited to make keynote speeches. Among them, Prof. Vijay Kumar Thakur from Scotland’s Rural College delivered a keynote speech on Polymer Nanocomposites as Promising Materials for the Future. Polymer nanocomposites are rapidly emerging as novel materials for a number of advanced engineering applications. The combination of both the polymers and fillers provides enhanced properties depending on the type and nature of polymer matrices as well as fillers. Therefore, this presentation mainly discussed about the work on the synthesis and processing of polymer-based materials for advanced application. Additionally, Assoc. Prof. Xiao Lu from Shenyang Ligong University made a report on Structure Design of Defective Electrocatalysts and Effect of High Magnetic Field on Electrocatalysis Process. The report proposed a method to achieve high efficiency oxygen reduction reaction by regulating the defect structure of carbon materials and metal catalyst materials and put forward the preparation of catalyst materials under strong magnetic field and the influence of strong magnetic field on oxygen evolution reaction and oxygen reduction reaction process. Their excellent presentations had sparked heated discussion in the conference. Moreover, every participant praised this conference for disseminating insightful knowledge.After months of well preparation and hard work, the proceedings of IFEMMT 2022 covering a bunch of papers are smoothly published. These papers feature but are not limited to the following topics: Advanced Design Technology, Manufacturing Systems and Automation, New Materials and Advanced Materials, etc. All the papers have been checked through rigorous review and processes to meet the requirements of publication.We would like to express our heartfelt appreciation to all the keynote speakers, peer reviewers, and all the participants. Particularly, we would like to acknowledge the Journal of Physics: Conference Series, for the endeavor of all its colleagues in publishing this paper volume. We are sure that IFEMMT 2022 will contribute to not only scientific and engineering progress but also other new products and processes.The Committee of IFEMMT 2022List of Committee member is available in this Pdf.

InGaAs-based Gunn light emitting diode

We report an n-type In0.53Ga0.47As based Gunn light emitting diode operated at around 1.6 μm. The device structure comprises of an n-type In0.53Ga0.47As epilayer with a thickness of 5 μm grown by Metal Organic Vapour Phase Epitaxy (MOVPE) on a semi-insulating InP substrate and fabricated in a planar architecture with a stepped structure at anode side to suppress the destructive effect of high built-in electric field in propagating Gunn domain. Gunn diode is operated under pulsed voltage with a pulse width of 60 ns and pulse duration of 4.5 ns to keep the duty cycle as low as 0.0013%. The Gunn oscillations with an 1 ns period are observed at around 4.1 kV/cm, which corresponds to the electric field threshold of Negative Differential Resistance (NDR). The light emission at around 1.6 μm also starts at the threshold electric field of the NDR region (E = 4.2 kV/cm) of the current-voltage curve, and the emission intensity increases drastically with increasing applied electric field. The observed light emission at NDR threshold electric field where Gunn oscillations appear on the voltage pulse is attributed to the impact ionisation process occurring in the current domains along the sample, which generates excess carriers to initiate the band-to-band recombination in In0.53Ga0.47As.

High Field-Effect Mobility and On/Off Current Ratio of p-Type ALD SnO Thin-Film Transistor

High-performance p-type thin-film transistors (TFTs) with high field-effect mobility and high on/off current ratios (Ion/Ioff) were fabricated by engineering the microstructure and surface morphology of the atomic layer-deposited (ALD) SnO channel layer. ALD SnO films grown at a deposition temperature of 225 °C showed excellent crystallinity and dense, smooth surfaces, which resulted in superior field-effect mobility of 6.13–7.24 cm2/V·s without using a high-temperature postannealing process. Optimization of the SnO channel thickness suppressed the off-state leakage current, which consequently yielded excellent TFT switching performance, with an Ion/Ioff value of 104–105. Additionally, backchannel passivation by the ALD Al2O3 film improved the subthreshold swing characteristics by reducing surface defect states. These results suggest that synergistic control of the microstructure, surface morphology, and thickness of ALD SnO channels is crucial for achieving high-performance p-type SnO TFTs.

Effects of high magnetic field on the reactive sintering process of Mn–Ga magnetic composites

This study focuses on the microstructure and magnetic properties of Mn-20at. %Ga composites prepared via high-energy ball milling and subsequent reactive sintering under a high magnetic field (HMF). XRD identified the ɛ-Mn3Ga, β-Mn0.85Ga0.15, and α-Mn phases, and their fractions determined the magnetic properties of the composites. The results revealed that HMF enhanced the fractions of both ɛ-Mn3Ga and β-Mn0.85Ga0.15 phases and decreased the fraction of α-Mn. The magnetic-field-induced enhancement effect on the reaction was mainly due to a decrease in the activation energy, which mainly affected the phase reaction at the initial stages. However, a HMF of 9–12 T suppressed the atomic diffusion between Mn and Ga, reducing the reaction-enhancing effect of the magnetic field. Compared with zero-field annealing, the 3 T in-field annealing enhanced the remanence and coercivity of the composite by 44% and 16%, respectively. In contrast, the 12 T HMF decreased the remanence but increased the coercivity to its highest value. The coercivity of the 12 T in-field samples reaches 11.09 kOe after 8 h of in-field annealing. After the in-field annealing, subsequent zero-field annealing for an appropriate duration may further increase the remanence and energy product. Enhancing the in-field annealing temperature up to 400 °C may increase the coercivity but decrease the remanence considerably.

High static magnetic field-assisted synthesis of Mn-doped ZnO diluted magnetic semiconductor via the hydrothermal method

ABSTRACT The magnetic field-assisted approach had been applied in the synthesis of Mn-doped ZnO diluted magnetic semiconductor via the hydrothermal method. The effect of high static magnetic field (HSMF) on the structures, morphologies and magnetic properties of the samples were characterised. X-ray diffraction and X-ray photoelectron analysis revealed that Mn ions had been doped in the hexagonal wurtzite ZnO and there were no any other detectable phases observed. Energy dispersive spectroscopy revealed that the content ratio of Zn to Mn was about 19:1. In addition, transmission electron microscopy and high-resolution transmission electron microscopy studies confirmed that Zn0.95Mn0.05O was nanorods in shape, and the growth rate of the nanorod was obviously restrained. While more oxygen vacancies (V O) had been introduced with increasing the magnetic flux density. Finally, magnetisation measurements implied that all of the Zn0.95Mn0.05O samples were room-temperature ferromagnetism and their magnetism was improved by the HSMF.

Electrical Treeing and Its Suppression Method of SiR in High Magnetic Field

This paper investigates the effects of high magnetic field on electrical treeing of silicone rubber (SiR). Experimental results show that electrical trees are more easily to be initiated and spread further along the direction of electric field under the effects of high magnetic field. When the direction of high magnetic field is perpendicular to that of electric field, magnetic field with higher magnetic flux density also results in larger accumulated damage area. Splitting of energy band structure and changes in polarization characteristics result in a lower interface barrier and more serious partial discharge, thus causing the weakened resistance to electrical treeing in high magnetic field. Based on the insulation degradation mechanism, SiR was modified by adding ferroferric oxide (Fe3O4) nanoparticles to improve its insulation performance in high magnetic field. Moderate addition amount of Fe3O4 nanoparticles is proved to be able to suppress electrical treeing in high magnetic field by forming quantum dots, modifying polarization properties and partial discharge behavior. Excessive addition of Fe3O4 nanoparticles has negative effects on suppressing electrical treeing due to the magnetization of the nanocomposites.

Effects of gradient high-field static magnetic fields on diabetic mice.

Although 9.4 T magnetic resonance imaging (MRI) has been tested in healthy volunteers, its safety in diabetic patients is unclear. Furthermore, the effects of high static magnetic fields (SMFs), especially gradient vs. uniform fields, have not been investigated in diabetics. Here, we investigated the consequences of exposure to 1.0-9.4 T high SMFs of different gradients (>10 T/m vs. 0-10 T/m) on type 1 diabetic (T1D) and type 2 diabetic (T2D) mice. We found that 14 h of prolonged treatment of gradient (as high as 55.5 T/m) high SMFs (1.0-8.6 T) had negative effects on T1D and T2D mice, including spleen, hepatic, and renal tissue impairment and elevated glycosylated serum protein, blood glucose, inflammation, and anxiety, while 9.4 T quasi-uniform SMFs at 0-10 T/m did not induce the same effects. In regular T1D mice (blood glucose ≥16.7 mmol/L), the >10 T/m gradient high SMFs increased malondialdehyde ( P<0.01) and decreased superoxide dismutase ( P<0.05). However, in the severe T1D mice (blood glucose ≥30.0 mmol/L), the >10 T/m gradient high SMFs significantly increased tissue damage and reduced survival rate. In vitro cellular studies showed that gradient high SMFs increased cellular reactive oxygen species and apoptosis and reduced MS-1 cell number and proliferation. Therefore, this study showed that prolonged exposure to high-field (1.0-8.6 T) >10 T/m gradient SMFs (35-1 380 times higher than that of current clinical MRI) can have negative effects on diabetic mice, especially mice with severe T1D, whereas 9.4 T high SMFs at 0-10 T/m did not produce the same effects, providing important information for the future development and clinical application of SMFs, especially high-field MRI.

1-2​T static magnetic field combined with Ferumoxytol prevent unloading-induced bone loss by regulating iron metabolism in osteoclastogenesis.

With the deepening of magnetic biomedical effects and electromagnetic technology, some medical instruments based on static magnetic field (SMF) have been used in orthopedic-related diseases treatment. Studies have shown SMF could combat osteoporosis by regulating the differentiation of mesenchymal stem cells (MSCs), osteoblast and osteoclast. With the development of nanotechnology, iron oxide nanoparticles (IONPs) have been reported to regulate the process of bone anabolism. As for SMF combined with IONPs, studies indicated osteogenic differentiation of MSCs were promoted by the combination of SMF and IONPs. However, there are few reports on the effects of SMF combined with IONPs on osteoclast. Herein, the purpose of this study was to investigate the effects of high static magnetic field (HiSMF) combined with IONPs on unloading-induced bone loss in vivo and osteoclastic formation in vitro, and elucidated the potential molecular mechanisms. In vivo, C57BL/6​J male mice were unloaded via tail suspension or housed normally. The hindlimb of mice were fixed and exposed to 1-2​T SMF for 1​h every day, 10​mg/kg of Ferumoxytol or saline were injected by tail vein once a week, last for 4 weeks. Bone microstructure, mechanical properties, and osteoclastogenesis were examined respectively. In vitro, the RAW264.7​cells were used to assess the effects of 1-2​T SMF combined with IONPs in osteoclastogenesis. The iron content was detected by atomic absorption spectrometry and Prussian blue staining. DCFH-DA and MitoSOX™ fluorescence staining were used to assess oxidative stress levels. NF-κB and MAPK signaling pathways were examined by western blot assay. In vivo, the results showed 1-2​T SMF and IONPs prevented the damage to bone microstructure and improved the mechanical properties, diminished the number of osteoclasts in unloaded mice, 1-2​T SMF combined with IONPs was found more effective. The iron content in the liver and spleen was reduced by the combination of 1-2​T SMF and IONPs, enhancing iron levels in the femur. In vitro, osteoclast formation was inhibited by 1-2​T SMF and IONPs treatment, and 1-2​T SMF combined with IONPs had a more pronounced effect. Moreover, iron uptake of IONPs in osteoclast was reduced to 1-2​T SMF exposure. Oxidative stress levels were decreased in osteoclast differentiation under 1-2​T SMF combined with IONPs treatment. Molecularly, the expression of NF-κB and MAPK signaling pathways were inhibited under 1-2​T SMF combined with IONPs in osteoclastogenesis. Synthetically, our research illustrated 1-2​T SMF combined with IONPs prevented unloading-induced bone loss by regulating iron metabolism in osteoclastogenesis.Translational potential of this article: As a non-invasive alternative therapy, some medical instruments based on SMF have been used for orthopedic-related diseases treatment for their portability, cheapness and safety. Ferumoxytol (Feraheme™), the first FDA-approved IONP drug for the treatment of iron deficiency anemia, has been also adapted in translational research for osteoporosis. Based on the above-mentioned two points, we found the synergistic effects of SMF and Ferumoxytol for treatment of experimental osteoporosis. These results show translational potentials for clinical application.

The fluorination effect: the importance of backbone planarity in achieving high performance ambipolar field effect transistors

Understanding the strategy of fluorination to control π-conjugation and intra and interchain interactions for the rational design of improved semiconducting polymers.

Influence of High Hydrostatic Pressure and Pulsed Electric Field Treatment on Moisture Absorption of Wheat Grains

AbstractThe effect of high pressure (0.1–600 MPa) and pulsed electric field (E = 3 and 6 kV cm−1) pretreatments on the moisture absorption properties of non‐hulled wheat grains were investigated. Microwave sensor was used as a non‐invasive technique for determination of the moisture content. The results demonstrated that high pressure soaking (&gt;100 MPa) of wheat grains significantly increased the water uptake. High pressure soaking (600 MPa) decreased the water uptake due to the starch gelatinization and as a result appearance of structural changes. Compared to control samples, PEF‐pretreated samples showed a sharp increase of water absorption at the initial process with a further reduction of equilibrium water content. Peleg's water absorption model was adapted to the measured data of non‐hulled wheat grains. Results showed a good prediction of Peleg's equation in all experiments, which gave the possibility for estimation of initial water absorption rate and equilibrium moisture content.

Mobility degradation under a high effective normal field in an inversion layer of 4H-SiC (0001) metal–oxide–semiconductor structures annealed in POCl3

Mobility degradation under a high effective normal field (1 MV cm−1 < E eff < 2 MV cm−1) in an inversion layer of 4H-silicon carbide (SiC) (0001) metal–oxide–semiconductor field-effect transistors (MOSFETs) annealed in POCl3 is investigated by applying a negative body bias (0 V ≥ V BS ≥ −40 V). The effective channel mobility (μ eff) is proportional to E eff −2.3–−2.2 in the range 1 MV cm−1 ≤ E eff. On the basis of the obtained results, the authors propose that the mobility degradation in the high-E eff region is caused by strong surface roughness scattering in SiC MOSFETs with a very low interface state density.

Passivating Graphene and Suppressing Interfacial Phonon Scattering with Mechanically Transferred Large-Area Ga2O3.

We demonstrate a large-area passivation layer for graphene by mechanical transfer of ultrathin amorphous Ga2O3 synthesized on liquid Ga metal. A comparison of temperature-dependent electrical measurements of millimeter-scale passivated and bare graphene on SiO2/Si indicates that the passivated graphene maintains its high field effect mobility desirable for applications. Surprisingly, the temperature-dependent resistivity is reduced in passivated graphene over a range of temperatures below 220 K, due to the interplay of screening of the surface optical phonon modes of the SiO2 by high-dielectric-constant Ga2O3 and the relatively high characteristic phonon frequencies of Ga2O3. Raman spectroscopy and electrical measurements indicate that Ga2O3 passivation also protects graphene from further processing such as plasma-enhanced atomic layer deposition of Al2O3.

High performance carbon nanotubes thin film transistors by selective ferric chloride doping

Single wall carbon nanotubes (SWNT) have been a significant research topic as active layers for thin film transistors (TFTs) due to their high charge carrier mobility beyond that of crystalline silicon. In this study, we report an effective approach to achieve a very high field-effect mobility and on/off ratio for solution processed semiconducting SWNT TFTs, by selective doping through contact with a thin ferric chloride (FeCl3) dopant layer. The semiconducting layer is formed by a double spin coating of the highly purified (>99%) high pressure carbon mono oxide (HiPCO) SWNT sorted by wrapping of poly (3-dodecylthiophene-2,5-diyl) (P3DDT). In order to achieve effective hole injection from the top Au source electrode without increasing the off-state drain current, less purified (98-99%) SWNTs produced by the plasma discharge process sorted by wrapping of poly (9,9-di-n-dodecylfluorene) (PFDD) are formed on the top of HiPCO film. Significantly improved TFT performance is achieved by the insertion of a few nanometers of a FeCl3 dopant layer at the semiconductor-contact interface. A significant high hole field-effect of 48.35 ± 3.11 cm2V−1s−1 (bare: 6.18 ± 0.87 cm2V−1s−1) with a reasonable on/off current ratio of 105, and low off current of ∼80 pA, are obtained by controlling the concentration of FeCl3 dopant (thickness = 1.5 nm) at the contact. Mobility is improved further at 2.5 nm thickness of the FeCl3 dopant layer resulting in a hole mobility of 177 ± 13.2 cm2 V−1s−1, an on/off ratio of 7.4 × 103, and off state current of 1.2 × 10−9 A.

Investigation of p-type High Temperature Field Effect Transistor for CMOS Logic Application

In this study, we propose a silicon-based metal oxide semiconductor field effect transistor (MOSFET) device for p-type that can operate at a high temperature (at 573 K). This device can be applied to logic circuits, and furthermore, used in semiconductor chips operating in high temperature environments. Through research, we selected 3C-SiC, which can prevent off-current most effectively, as a material to be applied to the device. After that, technology computer aided design (TCAD) simulation will be used to apply the interface characteristics according to the physical properties of silicon and 3CSiC, and to optimize the current characteristics of device as a logic element. In addition, we investigated a complementary metal oxide semiconductor (CMOS) logic circuit with simulation program with integrated circuit emphasis (SPICE) and verify the inverting characteristics in a high temperature environment of 573 K by applying the device of this study.

Fluorine-passivated In2O3 thin film transistors with improved electrical performance via low-temperature CF4/N2O plasma

In this Letter, we report the electrical performance improvement of indium oxide (In2O3) thin film transistors (TFTs) via a low-temperature CF4/N2O plasma treatment. It is found that the fluorination via CF4/N2O plasma can reduce the excessive electrons in the In2O3 channel more effectively compared to the oxidative annealing, providing the same low off-currents at a lower temperature of 200 °C, while the hydrogenation could not give rise to the off-current reduction. The fluorinated In2O3 TFTs with a channel thickness of 3.5 nm, a HfO2 dielectric thickness of 3.5 nm, and a channel length ranging from 80 nm to 1 μm demonstrate markedly improved electrical performances, including a high field effect mobility of 72.8 cm2/V s, a more positive threshold voltage, a higher on/off current ratio of ∼106, a smaller subthreshold swing below 200 mV/dec, and a higher stability to both negative and positive gate biases. X-ray photoelectron spectroscopy (XPS) confirms the fluorine incorporation in In2O3/HfO2 heterojunction upon CF4/N2O plasma, speculatively passivating the oxygen vacancies and explaining TFT performance enhancement. This study suggests that the anion doping such as fluorine incorporation could be an effective method to improve the performance of oxide semiconductor TFTs with ultrathin channel and dielectric.