High External Quantum Efficiency Research Articles

High External Quantum Efficiency and Dual-Band Emission of (C7H18N)3Sb2Cl9 for Sensitivity Temperature Sensing.

Organic-inorganic hybrid halides have gained attention for their ease of processing and remarkable optoelectronic properties. However, the relationship between the structure and optical properties requires further exploration. In this study, the butyltrimethylammonium cation (C7H18N+) was chosen, and seven compounds were synthesized: (C7H18N)3Sb2X9 (X = Cl, Br), (C7H18N)3Bi2X9 (X = Cl, Br, I), and (C7H18N)(C2H8N)MBr5 (M = Sb, Bi). Crystals with a single organic cation exhibit a zero-dimensional structure, while the introduction of dimethylamine ions increases the crystal dimensionality from zero-dimensional (C7H18N)3Sb2Br9 to one-dimensional (C7H18N)(C2H8N)SbBr5. Under 372 nm excitation, (C7H18N)3Sb2Cl9 showed broad orange-red single-band emission with a high photoluminescence quantum yield of 88.4% and an external quantum efficiency of up to 56.9%. A white light-emitting diode based on (C7H18N)3Sb2Cl9 achieved a high color rendering index of 96.3. Moreover, dual-band emission was observed in (C7H18N)3Sb2Cl9 under 308 nm excitation, which exhibits an absolute temperature sensitivity of 1.96 × 10-3 K-1 (320 K), and a flexible film was prepared by incorporating polydimethylsiloxane. This shows the promise of hybrid metal halides as photoluminescent materials and their possibilities for temperature sensing.

Pattern‐Matched Polymer Ligpands Toward Near‐Perfect Synergistic Passivation for High‐Performance and Stable Br/Cl Mixed Perovskite Light‐Emitting Diodes

Mixed Br/Cl perovskite nanocrystals (PeNCs) exhibit bright pure‐blue emission benefiting for fulfilling the Rec. 2100 standard. However, phase segregation remains a significant challenge that severely affects the stability and emission spectrum of perovskite light‐emitting diodes (PeLEDs). Here, we demonstrate the optimization of the spacing between polydentate functional groups of polymer ligands to match the surface pattern of CsPbBr1.8Cl1.2 PeNCs, resulting in effective synergistic passivation effect and significant improvements in PeLED performances. The block and alternating copolymers with different inter‐functional group spacing are facilely synthesized as ligands for PeNCs. Surprisingly, block copolymers with a higher functional group density do not match PeNCs, while alternating copolymers enable efficient PeNCs with the high photoluminescence intensity, low non‐radiative recombination rate and high exciton binding energy. Density functional theory calculations clearly confirm the almost perfect match between alternating copolymers and PeNCs. Finally, pure‐blue PeLEDs are achieved with the emission at 467 nm and Commission Internationale de l'Eclairage (CIE) coordinates of (0.131, 0.071), high external quantum efficiency (9.1%) and record spectral and operational stabilities (~ 80 mins) in mixed‐halide PeLEDs. Overall, this study contributes to designing the polymer ligands and promoting the development of high‐performance and stable pure‐color PeLEDs towards display applications.

Pattern-Matched Polymer Ligpands Toward Near-Perfect Synergistic Passivation for High-Performance and Stable Br/Cl Mixed Perovskite Light-Emitting Diodes.

Mixed Br/Cl perovskite nanocrystals (PeNCs) exhibit bright pure-blue emission benefiting for fulfilling the Rec. 2100 standard. However, phase segregation remains a significant challenge that severely affects the stability and emission spectrum of perovskite light-emitting diodes (PeLEDs). Here, we demonstrate the optimization of the spacing between polydentate functional groups of polymer ligands to match the surface pattern of CsPbBr1.8Cl1.2 PeNCs, resulting in effective synergistic passivation effect and significant improvements in PeLED performances. The block and alternating copolymers with different inter-functional group spacing are facilely synthesized as ligands for PeNCs. Surprisingly, block copolymers with a higher functional group density do not match PeNCs, while alternating copolymers enable efficient PeNCs with the high photoluminescence intensity, low non-radiative recombination rate and high exciton binding energy. Density functional theory calculations clearly confirm the almost perfect match between alternating copolymers and PeNCs. Finally, pure-blue PeLEDs are achieved with the emission at 467 nm and Commission Internationale de l'Eclairage (CIE) coordinates of (0.131, 0.071), high external quantum efficiency (9.1%) and record spectral and operational stabilities (~ 80 mins) in mixed-halide PeLEDs. Overall, this study contributes to designing the polymer ligands and promoting the development of high-performance and stable pure-color PeLEDs towards display applications.

Recent advances and prospects for GaN-based hybrid type ultraviolet photodetector

Abstract Solid-state UV photodetectors (PD) have received numerous attention because of the advantages of small size, absence of external cooling, high selectivity, and the ability to utilize the energy band structure semiconductor materials to achieve detection across various wavelengths. III-nitride thin films, as typical wide bandgap semiconductors with mature n-type and p-type doping capabilities, are ideal candidates for solid-state UV-PDs. However, a combination between III-nitride and other wide bandgap materials can either enrich the functionality of such devices such as spectrum-selective and broadband UV detection, or offers opportunities to enhance device performance, including high photoresponsivity, high external quantum efficiency, low dark current and fast response time. This topical review focuses on giving a thorough review of the III-nitride based hybrid-type UV photodetectors, their recent progress and future prospects. This review highlights different optical and electrical properties of various materials including GaN, Ga2O3, ZnO, perovskite etc. By carefully choosing the materials on two sides of the heterojunction and modulating the thickness and fermi levels and corresponding layers, p-i-n, Schottky, or MSM type photodetectors were successfully fabricated with outstanding device performances and novel spectral-selective properties. The advantages for future development of such hybrid-type PDs will be discussed, such as inherently formed p-n junction with large depletion region at the interface of two different materials, capability of bandgap engineering to tune the band offset of conduction band and valence band, thus enabling large barrier height for one type of carrier without influencing the other. The drawbacks in hybrid-type UV-PD due to poor interface quality and challenges in forming electrical contact in nanostructure hybrid UV-PD will also be discussed.

Intramolecular Hydrogen Bonding Rigidifying Flexible Bridge for Solution- and Vacuum-Processed TSCT-TADF Emitters.

To realize strong donor-acceptor face-to-face stacking for efficient through-space charge transfer-type thermally activated delayed fluorescence, a conceptually new design strategy is proposed to couple flexible bridges with adequate rigidity via built-in intramolecular hydrogen bonds (IHBs). The resulting emitter ACE-CN has a planarized benzyl methyl ether bridge self-anchored by the C-H···O IHB and shows a high photoluminescence quantum efficiency of 93%. The solution- and vacuum-processed devices exhibited high external quantum efficiencies of 11.8% and 24.7%, respectively.

Fine‐Tuning Crystal Structures of Lead Bromide Perovskite Nanocrystals through Trace Cadmium(II) Doping for Efficient Color‐Saturated Green LEDs

AbstractDecreasing perovskite nanocrystal size increases radiative recombination due to the quantum confinement effect, but also increases the Auger recombination rate which leads to carrier imbalance in the emitting layers of electroluminescent devices. Here, we overcome this trade‐off by increasing the exciton effective mass without affecting the size, which is realized through the trace Cd2+ doping of formamidinium lead bromide perovskite nanocrystals. We observe an ~2.7 times increase in the exciton binding energy benefiting from a slight distortion of the [BX6]4− octahedra caused by doping in the case of that the Auger recombination rate is almost unchanged. As a result, bright color‐saturated green emitting perovskite nanocrystals with a photoluminescence quantum yield of 96 % are obtained. Cd2+ doping also shifts up the energy levels of the nanocrystals, relative to the Fermi level so that heavily n‐doped emitters convert into only slightly n‐doped ones; this boosts the charge injection efficiency of the corresponding light‐emitting diodes. The light‐emitting devices based on those nanocrystals reached a high external quantum efficiency of 29.4 % corresponding to a current efficiency of 123 cd A−1, and showed dramatically improved device lifetime, with a narrow bandwidth of 22 nm and Commission Internationale de I'Eclairage coordinates of (0.20, 0.76) for color‐saturated green emission for the electroluminescence peak centered at 534 nm, thus being fully compliant with the latest standard for wide color gamut displays.

High‐Efficiency and Long‐Lifetime Near‐Infrared OLEDs Based on Iridium Complexes with Enhanced Horizontal Emitting Dipole Orientation

AbstractHigh‐efficiency and long‐lifetime near‐infrared (NIR) organic light‐emitting diodes (OLEDs) are rarely reported. Herein, three efficient NIR Ir(III) complexes 1–3 are developed with specially designed cyclometallated ligands based on pyrido[3,4‐b]pyrazine and oriented substitutions along the Ir─N bond axis. Electron‐deficient pyrazine ring effectively stabilizes LUMO energy, leading to significant emission bathochromic shift. Importantly, for complexes 2 and 3, oriented substitutions along the direction of the Ir─N bond axis considerably enhance the horizontal emitting dipole orientation ratio up to 90%. Their OLEDs demonstrate high maximum external quantum efficiencies (EQEs), negligible efficiency roll‐offs, superior radiance, and long lifetimes. The maximum EQEs and radiances of devices are 9.84% and 158 W Sr−1 m−2 at 725 nm for 1, 6.98% and 14.03 W Sr−1 m−2 at 760 nm for 2, and 12.49% and 18.94 W Sr−1 m−2 at 735 nm for 3, respectively. The device lifetime LT97 at 10 mA cm−2 is 453 h for complex 2, which sets a champion lifetime for NIR‐OLEDs. This work demonstrates that pyrido[3,4‐b]pyrazine is a desired building block for robust NIR emitting Ir(III) complexes, providing a superior paradigm to combine high efficiency, negligible roll‐off, and long device lifetime simultaneously toward practical applications.

High‐Performance Self‐Filtering Organic Photodetectors with Photomultiplication Narrowing

AbstractNarrowband organic photodetectors (OPDs) conventionally necessitate high applied biases to accommodate a sufficiently thick active layer for self‐filtering functions. Herein, a concept leveraging the photomultiplication (PM) process is proposed to achieve spectral narrowing in OPDs which can operate at low external biases. This PM narrowing mechanism integrates two distinct functions through a pseudo bilayer structure comprising a photon‐filtering (PF) layer and a PM layer, respectively. The initial PF layer absorbs short‐wavelength photons and selectively permits light within a narrow bandwidth at the band edge of the PF material to enter the subsequent PM layer, thereby initiating the PM effect. The combined action of these two layers synergistically empowers the OPDs to exhibit a pronounced PM effect, resulting in a notably high external quantum efficiency of 5840% at a narrowband peak of 680 nm under a low bias of −5.0 V. Furthermore, the OPDs achieve a substantial −3 dB bandwidth of 5.2 kHz, alongside a maximum detectivity of 2.60 × 1013 Jones. These findings position the OPDs among the top‐performing self‐filtering narrowband detectors, particularly for those capable of functioning at low external biases.

Highly Efficient and Thermally Stable Broadband NIR Phosphors with Superlong Afterglow Performance and their Multifunctional Applications

AbstractNear‐infrared (NIR) phosphor‐converted light‐emitting diodes (pc‐LEDs) are considered as promising next‐generation light sources for optoelectronic and biomedical applications. Nevertheless, NIR phosphors with large bandwidths, long emission peaks, high external quantum efficiencies (EQEs) and valuable thermal stabilities are challenging to develop. Herein, this study reports a novel gallium germanate host, Ga3Al3Ge2O13 (GAGO), with a large bandgap and rigid host lattice for Cr3+ ion doping. The blue LED excitable GAGO:0.012Cr3+ phosphor can produce broadband NIR emission with a maximum intensity at 816 nm and a full‐width at half‐maximum (FWHM) of 187 nm. Notably, the phosphor also exhibits an excellent EQE of 35.8% and perfect thermal stability (I423 K/I298 K = 67.4%). Moreover, an attractive NIR afterglow duration of more than 24 h is achieved in the GAGO:0.004Cr3+ phosphor. The type and origin of the traps are discussed, and a possible long persistent luminescent (LPL) mechanism is proposed. Finally, an NIR pc‐LED based on a GAGO:0.012Cr3+ phosphor is fabricated. The results demonstrate that the obtained phosphors show great potential for use in night vision, nondestructive detection, bioimaging and information encryption. This study provides new insight into the development of broadband NIR luminescent materials with high efficiency, good thermal stability and extraordinary afterglow performance.

High‐Efficiency Semitransparent Near‐Infrared Organic Photodetectors Enabled by a Molecular Crystal Network

AbstractSemitransparent organic photodetectors (ST‐OPDs) show immense promise for integration into optoelectronic devices, offering adjustable absorption and see‐through functionalities. However, achieving high‐performance ST‐OPDs remains challenging, necessitating a delicate balance of low dark current density, high external quantum efficiency, and optimal visible light transmission. Here, a strategy is presented using anode interfacial materials (AIMs) as the donor and narrow bandgap non‐fullerene acceptors (NFAs) to formulate the donor: acceptor light‐sensitive layer. Critical to the approach is the incorporation of 1,8‐diiodooctane during film processing, enabling the formation of morphology with an NFA molecular crystal network embedded within the donor polymer matrix. This optimized morphology substantially boosted device external quantum efficiency and reduced dark current under reverse bias, yielding a remarkable special detectivity of over 1013 Jones at 840 nm under a bias of −0.1 V. ST‐OPDs are achieved with detectivity surpassing 1012 Jones and notable average visible transmittance of over 50%. These findings highlight the potential of AIM:NFA combinations for high‐efficiency ST‐OPDs by finely controlling morphology through multiple length scales, opening doors for various applications in transparent electronics and beyond.

Inverted device architecture for high efficiency single-layer organic light-emitting diodes with imbalanced charge transport

Many wide-gap organic semiconductors exhibit imbalanced electron and hole transport, therefore efficient organic light-emitting diodes require a multilayer architecture of electron- and hole-transport materials to confine charge recombination to the emissive layer. Here, we show that even for emitters with imbalanced charge transport, it is possible to obtain highly efficient single-layer organic light emitting diodes (OLEDs), without the need for additional charge-transport and blocking layers. For hole-dominated emitters, an inverted single-layer device architecture with ohmic bottom-electron and top-hole contacts moves the emission zone away from the metal top electrode, thereby more than doubling the optical outcoupling efficiency. Finally, a blue-emitting inverted single-layer OLED based on thermally activated delayed fluorescence is achieved, exhibiting a high external quantum efficiency of 19% with little roll-off at high brightness, demonstrating that balanced charge transport is not a prerequisite for highly efficient single-layer OLEDs.

Efficient Large-Area (81 cm2) Ternary Copper Halides Light-Emitting Diodes with External Quantum Efficiency Exceeding 13% via Host-Guest Strategy.

Ternary copper (Cu) halides are promising candidates for replacing toxic lead halides in the field of perovskite light-emitting diodes (LEDs) toward practical applications. However, the electroluminescent performance of Cu halide-based LEDs remains a great challenge due to the presence of serious nonradiative recombination and inefficient charge transport in Cu halide emitters. Here, the rational design of host-guest [dppb]2Cu2I2 (dppb denotes 1,2-bis[diphenylphosphino]benzene) emitters and its utility in fabricating efficient Cu halide-based green LEDs that show a high external quantum efficiency (EQE) of 13.39% are reported. The host-guest [dppb]2Cu2I2 emitters with mCP (1,3-bis(N-carbazolyl)benzene) host demonstrate a significant improvement of carrier radiative recombination efficiency, with the photoluminescence quantum yield increased by nearly ten times, which is rooted in the efficient energy transfer and type-I energy level alignment between [dppb]2Cu2I2 and mCP. Moreover, the charge-transporting mCP host can raise the carrier mobility of [dppb]2Cu2I2 films, thereby enhancing the charge transport and recombination. More importantly, this strategy enables a large-area prototype LED with a record-breaking area up to 81 cm2, along with a decent EQE of 10.02% and uniform luminance. It is believed these results represent an encouraging stepping stone to bring Cu halide-based LEDs from the laboratory toward commercial lighting and display panels.

Facile Nanowelding Process for Silver Nanowire Electrodes Toward High‐Performance Large‐Area Flexible Organic Light‐Emitting Diodes

AbstractDespite considerable interest, uniform and robust flexible transparent conducting electrodes (FTCEs) that can be seamlessly integrated and used for highly efficient large‐area flexible oganic light‐emitting diodes (OLEDs) remain elusive. In this study, a large‐area fabrication of uniform transparent electrodes for high‐performance flexible OLEDs by exploiting the rapid nanowelding process of silver nanowires (AgNWs) onto polyethylene terephthalate substrate under Xe‐lamp irradiation and mechanical pressing treatment is reported. The performance of AgNWs FTCEs is significantly enhanced by applying the Xe‐lamp beam irradiation for 5 s and subsequent compression at 20 MPa for 15 s, achieving a low sheet resistance of 26.5 Ω sq−1, a high transmittance of 95.2% (at 550 nm), and very smooth surfaces with root‐mean‐square of 5.4 nm. Meanwhile, the nanowelded AgNWs FTCEs maintain excellent electrical conductivity (only a 2.96% increase in ΔR/R0) after 1000 bending cycles. The resulting AgNWs FTCEs‐based green phosphorescent OLED achieves an unprecedented external quantum efficiency (EQE) of 23.7% and a current efficiency as high as 81.5 cd A−1. Benefiting from the uniform properties for resulting AgNWs FTCEs, the fabricated flexible OLED with a large area of 25 × 25 mm2 still retains a high EQE of 22.2% and a current efficiency of 78.0 cd A−1.

Intense NIR-II luminescence through stabilization of tetrahedral (Mn5+O4) lumophore in apatites with high external quantum efficiency

The discovery of highly efficient near-infrared (NIR) emitting phosphors is essential for multiple spectroscopic applications. Pentavalent-manganese (Mn5+) is a rarely-reported NIR-II activator due to the its instability in inorganic solids. In this study, Mn5+-activated apatite phosphors A5(B1-xMnxO4)3X (A = Sr, Ba; B = P, V; X = OH, F, Cl, Br) were reported. Benefiting from the discrete P/VO4 tetrahedron and stabilization effect of alkaline-earth cation, Mn5+ existed as MnO43− anion can be effectively incorporated into the A5(P/VO4)3X. A selection of 16 different apatites is conducted to test the structural and compositional effect on Mn5+ stabilization and luminescence. The structure-property relationship was discussed with a detailed analysis on Mn5+ Tanabe-Sugano diagram and Dq/B calculation. Particularly, the optimized Ba5(VO4)3Cl: 0.01Mn5+ (λex = 650 nm, λem = 1181 nm) reveals an exceptional external quantum efficiency of 61.1 % with vivid turquoise body color. The multiparametric thermometry by luminescence intensity ratio (LIR) and 1E lifetime were demonstrated with excellent linear regressions (R2 > 99.9 %) and high relative sensitivities of > 1.0% K−1 in the range of physiological temperatures. A NIR-II phosphor-converted light-emitting diode (pc-LED) is fabricated with a NIR output power of 30.18 mW at 60 mA driven current and photoelectric conversion efficiency of 6.63 %.

Highly efficient organic light‐emitting diodes and light‐emitting electrochemical cells employing multiresonant thermally activated delayed fluorescent emitters with bulky donor or acceptor peripheral groups

AbstractMultiresonant thermally activated delayed fluorescence (MR‐TADF) emitters have been the focus of extensive design efforts as they are recognized to show bright, narrowband emission, which makes them very appealing for display applications. However, the planar geometry and relatively large singlet–triplet energy gap lead to, respectively, severe aggregation‐caused quenching (ACQ) and slow reverse intersystem crossing (RISC). Here, a design strategy is proposed to address both issues. Two MR‐TADF emitters triphenylphosphine oxide (TPPO)‐tBu‐DiKTa and triphenylamine (TPA)‐tBu‐DiKTa have been synthesized. Twisted ortho‐substituted groups help increase the intermolecular distance and largely suppress the ACQ. In addition, the contributions from intermolecular charge transfer states in the case of TPA‐tBu‐DiKTa help to accelerate RISC. The organic light‐emitting diodes (OLEDs) with TPPO‐tBu‐DiKTa and TPA‐tBu‐DiKTa exhibit high maximum external quantum efficiencies (EQEmax) of 24.4% and 31.0%, respectively. Notably, the device with 25 wt% TPA‐tBu‐DiKTa showed both high EQEmax of 28.0% and reduced efficiency roll‐off (19.9% EQE at 1000 cd m−2) compared to the device with 5 wt% emitter (31.0% EQEmax and 11.0% EQE at 1000 cd m−2). The new emitters were also introduced into single‐layer light‐emitting electrochemical cells (LECs), equipped with air‐stable electrodes. The LEC containing TPA‐tBu‐DiKTa dispersed at 0.5 wt% in a matrix comprising a mobility‐balanced blend‐host and an ionic liquid electrolyte delivered blue luminance with an EQEmax of 2.6% at 425 cd m−2. The high efficiencies of the OLEDs and LECs with TPA‐tBu‐DiKTa illustrate the potential for improving device performance when the DiKTa core is decorated with twisted bulky donors.

Spray pyrolysis-deposited NiO film as a hole-injection layer for CsPbBr3 nanocrystal-based light-emitting diodes

In perovskite-based light-emitting diodes (LEDs), employing an inorganic material for the hole-injection layer instead of an organic material is crucial for attaining optimal performance and device stability. This layer needs to exhibit [Formula: see text]-type conductivity with high carrier mobility while being fabricated with a simple and industrially compatible method. In this study, uniform and thin [Formula: see text]-type NiO films were deposited through spray pyrolysis in an air atmosphere. The as-deposited film showed poor crystallinity, and high resistance reduced hole-injection performance. Subsequent thermal treatment at 500∘C enhanced the crystallinity of the layer, reducing resistance and improving LED performance. The film exhibited [Formula: see text]-type semiconductor characteristics, and its carrier mobility, carrier concentration and resistivity were 53.0 × 10[Formula: see text] cm3, 116 cm2 ⋅ Vs[Formula: see text] and 0.98 [Formula: see text] ⋅ cm[Formula: see text], respectively. Moreover, a compact CsPbBr3 nanocrystal (NC) film as an emitting layer was deposited with a centrifugal coating technique. The resulting LED component featuring a fluoride-doped tin oxide (FTO)/NiO/CsPbBr3 NCs/tris-(1-phenyl-1H-benzimidazole)/LiF/Au structure and demonstrating high luminance, current efficiency and external quantum efficiency (EQE) reached 12,000 cd ⋅ m[Formula: see text], 8.8 cd ⋅ A[Formula: see text] and 3.56%, respectively, at 5.5 V. Our work offers a simple and unique approach for accelerating the development of advanced interfacial materials and circumventing major interfacial problems in solution-processed perovskite NC films for high-performance LEDs.

High performance deep-ultraviolet light-emitting diodes with transverse electron injection

Conventional structure deep-ultraviolet light-emitting diodes (DUV-LEDs) at short wavelengths typically suffer from electron overflow and low light-emitting efficiency. For solar-blind communication application, conventional DUV-LEDs are struggling to simultaneously implement high external quantum efficiency (EQE) and high modulation bandwidth. In this paper, we report that transverse structure LEDs can overcome abovementioned problems and achieve high EQE and high modulation bandwidth. The n-AlGaN free transverse structure LEDs have been demonstrated to yield high crystal quality multiple quantum wells (MQWs). Due to the transverse electron injection, transverse structure LEDs can confine electrons well within the MQWs and avoid electron overflow. To enhance the electron injection and light extraction characteristics, the narrow and long mesa designs were optimized by both experimental and theoretical-fit results. Finite-difference time domain simulation indicates that the n+-GaN layer of the transverse LEDs with the transverse MQWs mesa design does not degrade light extraction. The transverse structure LEDs attain the maximum light output power and EQE recorded to date for DUV-LEDs below 250 nm, respectively 14 mW and 1.72 %. Furthermore, the −3 dB modulation bandwidth can be achieved up to 416 MHz.

Fine-Tuning Crystal Structures of Lead Bromide Perovskite Nanocrystals through Trace Cadmium(II) Doping for Efficient Color-Saturated Green LEDs.

Decreasing perovskite nanocrystal size increases radiative recombination due to the quantum confinement effect, but also increases the Auger recombination rate which leads to carrier imbalance in the emitting layers of electroluminescent devices. Here, we overcome this trade-off by increasing the exciton effective mass without affecting the size, which is realized through the trace Cd2+ doping of formamidinium lead bromide perovskite nanocrystals. We observe an ~2.7 times increase in the exciton binding energy benefiting from a slight distortion of the [BX6]4- octahedra caused by doping in the case of that the Auger recombination rate is almost unchanged. As a result, bright color-saturated green emitting perovskite nanocrystals with a photoluminescence quantum yield of 96 % are obtained. Cd2+ doping also shifts up the energy levels of the nanocrystals, relative to the Fermi level so that heavily n-doped emitters convert into only slightly n-doped ones; this boosts the charge injection efficiency of the corresponding light-emitting diodes. The light-emitting devices based on those nanocrystals reached a high external quantum efficiency of 29.4 % corresponding to a current efficiency of 123 cd A-1, and showed dramatically improved device lifetime, with a narrow bandwidth of 22 nm and Commission Internationale de I'Eclairage coordinates of (0.20, 0.76) for color-saturated green emission for the electroluminescence peak centered at 534 nm, thus being fully compliant with the latest standard for wide color gamut displays.

Multifunctional Deep-Blue Thermally Activated Delayed Fluorescence Based on an Oxygen-Bridged Boron Acceptor for Highly Efficient Organic Light-Emitting Diodes.

Until now, thermally activated delayed fluorescence (TADF) materials based on bridged boron-based acceptors have been primarily developed as dopants. However, in this study, we synthesized and characterized multifunctional deep-blue TADF materials─t-OBO-DMAC and t-OBO-DPAC─using bridged boron-based acceptors in combination with dimethylacridine or diphenylacridine as donors. These materials serve as both dopants and hosts. Theoretical calculations and experimentally measured photophysical properties of t-OBO-DMAC reveal a smaller singlet-triplet energy difference, higher photoluminescence quantum yield, and more efficient reverse intersystem crossing compared to t-OBO-DPAC. When evaluated as TADF emitters, t-OBO-DMAC and t-OBO-DPAC exhibited maximum external quantum efficiency (EQE) of 14.4 and 7.3% with deep-blue color coordinates of (0.14, 0.11) and (0.15, 0.07), respectively. Both materials were further assessed as hosts in various configurations, including host-only, TADF, phosphorescent, and phosphor-sensitized fluorescence (PSF)-emitting systems. Notably, t-OBO-DMAC demonstrated a high maximum EQE of 13.9% with deep-blue color coordinates of (0.15, 0.07) in a nondoped host-only device. Remarkably, both materials achieved EQEs exceeding 20% in the PSF devices. Our study marks a critical advancement in the field that breaks the conventional boundaries of the dopant and host and demonstrates unprecedented multifunctionalities for advanced organic light-emitting diodes.

High performance near ultraviolet ray detector by cluster-wrapped surface structure in ferroelectrics

High-sensitivity detectors for near-ultraviolet rays are of great importance in civil and military fields. Recently, great efforts have been made to enhance the sensitivity, but mainly at the cost of increasing energy consumption or bulk volume. High-performance near-ultraviolet ray detector was fabricated using ZnO clusters compounded in ferroelectric Bi4.5Na0.5Ti4O15 composites, which exhibit ultrahigh sensitivity detectivity (D*), linear dynamic response (LDR) and photoconductance σ(λ) of up to 3.9 × 1011 Jones, 52.04 dB, and 3.9 × 10-10 S/m, respectively. The three-parameter criterions are over a wide wavelength range larger than that of a semiconductor. High external quantum efficiency 4.6 % is to ensure the self-powered device. Such a brilliant virtue is attributed to the artificial transport layer by the superior ZnO cluster surface-wrapped structure, which effectively transports the electrons or holes induced by photons. These pioneering findings indicate that the ZnO cluster surface-wrapped structure may be useful for the assembly of ferroelectric high-performance UV photoelectronic devices in the near future.