High-efficiency Light-emitting Diodes Research Articles

High External Quantum Efficiency Light-Emitting Diodes Enabled by Advanced Heterostructures of Type-II Nanoplatelets

Colloidal quantum wells (CQWs), also known as nanoplatelets (NPLs), are exciting material systems for numerous photonic applications, including lasers and light-emitting diodes (LEDs). Although many successful type-I NPL-LEDs with high device performance have been demonstrated, type-II NPLs are not fully exploited for LED applications, even with alloyed type-II NPLs with enhanced optical properties. Here, we present the development of CdSe/CdTe/CdSe core/crown/crown (multi-crowned) type-II NPLs and systematic investigation of their optical properties, including their comparison with the traditional core/crown counterparts. Unlike traditional type-II NPLs such as CdSe/CdTe, CdTe/CdSe, and CdSe/CdSexTe1-x core/crown heterostructures, here the proposed advanced heterostructure reaps the benefits of having two type-II transition channels, resulting in a high quantum yield (QY) of 83% and a long fluorescence lifetime of 73.3 ns. These type-II transitions were confirmed experimentally by optical measurements and theoretically using electron and hole wave function modeling. Computational study shows that the multi-crowned NPLs provide a better-distributed hole wave function along the CdTe crown, while the electron wave function is delocalized in the CdSe core and CdSe crown layers. As a proof-of-concept demonstration, NPL-LEDs based on these multi-crowned NPLs were designed and fabricated with a record high external quantum efficiency (EQE) of 7.83% among type-II NPL-LEDs. These findings are expected to induce advanced designs of NPL heterostructures to reach a fascinating level of performance, especially in LEDs and lasers.

High Color-Purity and Efficient Pure-Blue Perovskite Light-Emitting Diodes Based on Strongly Confined Monodispersed Quantum Dots.

Here, we develop an in situ photoluminescence (PL) system to monitor the nucleation and growth of perovskite nanocrystals and control the monomer supply rate to achieve strongly confined and monodispersed quantum dots (QDs) with average size of 3.4 nm. Pure-blue (460 nm wavelength) CsPbBr3 QDs with near unity PL quantum yield and narrow size distribution (small size dispersion of 9.6%) were thus produced. Light-emitting diodes (LEDs) based on these QDs were prepared by using an all-solution processing route, which showed narrow electroluminescence with full width at half-maximum of 20 nm and a high color purity of 97.3%. The device also had a high external quantum efficiency of 10.1%, maximum luminance of 11 610 cd m-2, and continuous operation lifetime of 21 h at the initial luminance of 102 cd m-2, corresponding to the state-of-art for pure-blue perovskite LEDs.

Enhancing light extraction efficiency of GaN-based light-emitting diodes with reticulated photonic crystals

We have proposed reticulated photonic crystals (PhCs) on the top surface of conventional light-emitting diodes (LEDs) to increase the light extraction efficiency (LEE). The rigorous electromagnetic simulations based on the three-dimensional finite-difference time-domain method were carried out to investigate the optical properties of reticulated PhCs LEDs and mechanisms of reticulated PhCs improving the LEE of LEDs. Results from these simulations showed that more than 115% enhancement of LEE had been achieved for LEDs with reticulated PhCs period of 200 nm and depth of 200 nm. This study provides an innovative approach to the creation of high-efficiency LEDs of the upcoming generation.

Structure of V-defects in long wavelength GaN-based light emitting diodes

The V-defect is a naturally occurring inverted hexagonal pyramid structure that has been studied in GaN and InGaN growth since the 1990s. Strategic use of V-defects in pre-quantum well superlattices or equivalent preparation layers has enabled record breaking efficiencies for green, yellow, and red InGaN light emitting diodes (LEDs) utilizing lateral injection of holes through the semi-polar sidewalls of the V-defects. In this article, we use advanced characterization techniques such as scattering contrast transmission electron microscopy, high angle annular dark field scanning transmission electron microscopy, x-ray fluorescence maps, and atom probe tomography to study the active region compositions, V-defect formation, and V-defect structure in green and red LEDs grown on (0001) patterned sapphire and (111) Si substrates. We identify two distinct types of V-defects. The “large” V-defects are those that form in the pre-well superlattice and promote hole injection, usually nucleating on mixed (Burgers vector b=±a±c) character threading dislocations. In addition, “small” V-defects often form in the multi-quantum well region and are believed to be deleterious to high-efficiency LEDs by providing non-radiative pathways. The small V-defects are often associated with basal plane stacking faults or stacking fault boxes. Furthermore, we show through scattering contrast transmission electron microscopy that during V-defect filling, the threading dislocation, which runs up the center of the V-defect, will “bend” onto one of the six {101¯1} semi-polar planes. This result is essential to understanding non-radiative recombination in V-defect engineered LEDs.

Efficient and Bright Deep-Red Light-Emitting Diodes based on a Lateral 0D/3D Perovskite Heterostructure.

Bright and efficient deep-red light-emitting diodes (LEDs) are important for applications in medical therapy and biological imaging due to the high penetration of deep-red photons into human tissues. Metal-halide perovskites have potential to achieve bright and efficient electroluminescence due to their favorable optoelectronic properties. However, efficient and bright perovskite-based deep-red LEDs have not been achieved yet, due to either Auger recombination in low-dimensional perovskites or trap-assisted nonradiative recombination in 3D perovskites. Here, a lateral Cs4PbI6/FAxCs1- xPbI3 (0D/3D) heterostructure that can enable efficient deep-red perovskite LEDs at very high brightnessis demonstrated. The Cs4PbI6 can facilitate the growth of low-defect FAxCs1- xPbI3, and act as low-refractive-index grids, which can simultaneously reduce nonradiative recombination and enhance light extraction. This device reaches a peak external quantum efficiency of 21.0% at a photon flux of 1.75×1021 m-2 s-1, which is almost two orders of magnitude higher than that of reported high-efficiency deep-red perovskite LEDs. Theses LEDs are suitable for pulse oximeters, showing an error <2% of blood oxygen saturation compared with commercial oximeters.

High efficiency pure blue perovskite quantum dot light-emitting diodes based on formamidinium manipulating carrier dynamics and electron state filling

Achieving high efficiency and stable pure blue colloidal perovskite quantum dot (QD) light-emitting diodes (LEDs) is still an enormous challenge because blue emitters typically exhibit high defect density, low photoluminescence quantum yield (PLQY) and easy phase dissociation. Herein, an organic cation composition modification strategy is used to synthesize high-performance pure blue perovskite quantum dots at room temperature. The synthesized FA-CsPb(Cl0.5Br0.5)3 QDs show a bright photoluminescence with a high PLQY (65%), which is 6 times higher than the undoped samples. In addition, the photophysical properties of the FA cation doping was deeply illustrated through carrier dynamics and first principal calculation, which show lower defects, longer lifetime, and more reasonable band gap structure than undoped emitters. Consequently, pure blue FA-CsPb(Cl0.5Br0.5)3 QDs light-emitting devices were fabricated and presented a maximum luminance of 1452 cd m−2, and an external quantum efficiency of 5.01 % with an emission at 474 nm. The excellent photoelectric properties mainly originate from the enhanced blue QDs emitter and effective charge injection and exciton radiation. Our finding underscores this easy and feasible room temperature doping approach as an alternative strategy to blue perovskite QD LED development.

Zwitterions Narrow Distribution of Perovskite Quantum Wells for Blue Light-Emitting Diodes with Efficiency Exceeding 15.

While quasi-two-dimensional (quasi-2D) perovskites have emerged as promising semiconductors for light-emitting diodes (LEDs), the broad-width distribution of quantum wells hinders their efficient energy transfer and electroluminescence performance in blue emission. In particular, the underlying mechanism is closely related to the crystallization kinetics and has yet to be understood. Here for the first time, the influence of bifunctional zwitterions with different coordination affinity on the crystallization kinetics of quasi-2D perovskites is systematically investigated. The zwitterions can coordinate with Pb2+ and also act as co-spacer organic species in quasi-2D perovskites, which collectively inhibit the aggregation of colloidal precursors and shorten the distance of quantum wells. Consequently, restricted nucleation of high-n phases and promoted growth of low-n phases are achieved with moderately coordinated zwitterions, leading to the final film with a more concentrated n distribution and improved energy transfer efficiency. It thus enables high-efficiency blue LEDs with a recorded external quantum efficiency of 15.6% at 490nm, and the operation stability has also been prolonged to 55.3min. These results provide useful directions for tuning the crystallization kinetics of quasi-2D perovskites, which is expected to lead to high-performance perovskite LEDs.

Stable ZnS Electron Transport Layer for High-Performance Inverted Cadmium-Free Quantum Dot Light-Emitting Diodes

We report high-efficiency and long-lifetime inverted green cadmium-free (InP-based) quantum dot light-emitting diodes (QLEDs) using a stable ZnO/ZnS cascaded electron transport layer (ETL). We have successfully developed a strategy to spin-coat stable ZnS ETLs with a relatively higher conduction band minimum (CBM) and lower electron mobility than that of ZnO, which leads to balanced carrier injection and an improved device lifetime. Analysis shows that by using the ZnO/ZnS cascaded ETL, electron injection is reduced, resulting in an improved charge balance in the QD layer and suppressed exciton quenching, which preserves the emission properties of QDs. Optimized devices with ZnO/ZnS cascaded ETLs show a maximum external quantum efficiency of 10.8% and a maximum current efficiency of 37.5 cd/A; these efficiency values are an almost 2.2-fold improvement compared to those of reference devices without ZnS. The QLED devices also showed a remarkably long lifetime (LT70) of 265 h at an initial luminance of 1000 cd/m2. The predicted half-lifetime (LT50) at 100 cd/m2 is 60,255 h, which, to our knowledge, is currently the longest lifetime yet reported for InP-based green QLEDs.

Synergistic passivation and stepped-dimensional perovskite analogs enable high-efficiency near-infrared light-emitting diodes

Formamidinium lead iodide (FAPbI3) perovskites are promising emitters for near-infrared light-emitting diodes. However, their performance is still limited by defect-assisted nonradiative recombination and band offset-induced carrier aggregation at the interface. Herein, we introduce a couple of cadmium salts with acetate or halide anion into the FAPbI3 perovskite precursors to synergistically passivate the material defects and optimize the device band structure. Particularly, the perovskite analogs, containing zero-dimensional formamidinium cadmium iodide, one-dimensional δ-FAPbI3, two-dimensional FA2FAn-1PbnI3n+1, and three-dimensional α-FAPbI3, can be obtained in one pot and play a pivotal and positive role in energy transfer in the formamidinium iodide-rich lead-based perovskite films. As a result, the near-infrared FAPbI3-based devices deliver a maximum external quantum efficiency of 24.1% together with substantially improved operational stability. Combining our findings on defect passivation and energy transfer, we also achieve near-infrared light communication with device twins of light emitting and unprecedented self-driven detection.

Strain-engineered N-polar InGaN nanowires: towards high-efficiency red LEDs on the micrometer scale

The absence of efficient red-emitting micrometer-scale light emitting diodes (LEDs), i.e., LEDs with lateral dimensions of 1 μm or less is a major barrier to the adoption of microLEDs in virtual/augmented reality. The underlying challenges include the presence of extensive defects and dislocations for indium-rich InGaN quantum wells, strain-induced quantum-confined Stark effect, and etch-induced surface damage during the fabrication of quantum well microLEDs. Here, we demonstrate a new approach to achieve strong red emission ( &gt; 620 nm ) from dislocation-free N-polar InGaN/GaN nanowires that included an InGaN/GaN short-period superlattice underneath the active region to relax strain and incorporate more indium within the InGaN dot active region. The resulting submicrometer-scale devices show red electroluminescence dominantly from an InGaN dot active region at low-to-moderate injection currents. A peak external quantum efficiency and a wall-plug efficiency of 2.2% and 1.7% were measured, respectively, which, to the best of our knowledge, are the highest values reported for a submicrometer-scale red LED. This study offers a new path to overcome the efficiency bottleneck of red-emitting microLEDs for a broad range of applications including mobile displays, wearable electronics, biomedical sensing, ultrahigh speed optical interconnect, and virtual/augmented reality.

Confinement-Tunable Transition Dipole Moment Orientation in Perovskite Nanoplatelet Solids and Binary Blends.

Tuning the transition dipole moment (TDM) orientation in low-dimensional semiconductors is of fundamental and practical interest, as it enables high-efficiency nanophotonics and light-emitting diodes. However, despite recent progress in nanomaterials physics and chemistry, material systems that allow continuous tuning of the TDM orientation remain rare. Here, combining k-space photoluminescence spectroscopy and multiscale modeling, we demonstrate that the TDM orientation in lead halide perovskite (LHP) nanoplatelet (NPL) solids is largely confinement-tunable through the NPL geometry that regulates the anisotropy of Bloch states, dielectric confinement, and exciton fine structure. We further quantified the role of uniaxial ordering during NPL assembly in modifying the macroscopic emission directionality of thin films, which is especially important in actual optoelectronic devices. Our theoretical framework successfully corroborates the previous prediction of exciton bright level order reversal with experimental evidence of a counterintuitive reduction of in-plane dipole ratio in ultrathin (one- and two-monolayer-thick) NPLs, even at room temperature. More interestingly, the NPLs retain their TDM orientation in binary blends irrespective of interparticle energy transfer, owing to the phase segregation and NPL-NPL decoupling, enabling the design of films whose fluorescence exhibits an intrinsic angle-dependent color gradient.

Study of Defects and Nano-patterned Substrate Regulation Mechanism in AlN Epilayers.

The high crystal quality and low dislocation densities of aluminum nitride (AlN) grown on flat and nano-patterned sapphire substrate that are synthesized by the metal-organic chemical vapor deposition (MOCVD) method are essential for the realization of high-efficiency deep ultraviolet light-emitting diodes. The micro-strains of 0.18 × 10-3 cm-2 for flat substrate AlN and 0.11 × 10-3 cm-2 for nano-patterned substrate AlN are obtained by X-ray diffractometer (XRD). The screw and edge dislocation densities of samples are determined by XRD and transmission electron microscope (TEM), and the results indicate that the nano-patterned substrates are effective in reducing the threading dislocation density. The mechanism of the variation of the threading dislocation in AlN films grown on flat and nano-patterned substrates is investigated comparatively. The etch pit density (EPD) determined by preferential chemical etching is about 1.04 × 108 cm-2 for AlN grown on a nano-patterned substrate, which is slightly smaller than the results obtained by XRD and TEM investigation. Three types of etch pits with different sizes are all revealed on the AlN surface using the hot KOH etching method.

Realization of high-efficiency AlGaN deep ultraviolet light-emitting diodes with polarization-induced doping of the p-AlGaN hole injection layer

We investigate the polarization-induced doping in the gradient variation of Al composition in the p-Al0.75Ga0.25N/Al x Ga1−x N hole injection layer (HIL) for deep ultraviolet light-emitting diodes (DUV-LEDs) with an ultra-thin p-GaN (4 nm) ohmic contact layer capable of emitting 277 nm. The experimental results show that the external quantum efficiency (EQE) and wall plug efficiency (WPE) of the structure graded from 0.75 to 0.55 in the HIL reach 5.49% and 5.04%, which are improved significantly by 182% and 209%, respectively, compared with the structure graded from 0.75 to 0.45, exhibiting a tremendous improvement. Both theoretical speculations and simulation results support that the larger the difference between 0.75 and x in the HIL, the higher the hole concentration that should be induced; thus, the DUV-LED has a higher internal quantum efficiency (IQE). Meanwhile, as the value of x decreases, the absorption of the DUV light emitted from the active region by the HIL is enhanced, reducing the light extraction efficiency (LEE). The IQE and LEE together affect the EQE performance of DUV-LEDs. To trade off the contradiction between the enhanced IQE and decreased LEE caused by the decrease in Al composition, the Al composition in the HIL was optimized through theoretical calculations and experiments.

Filling Chlorine Vacancy with Bromine: A Two-Step Hot-Injection Approach Achieving Defect-Free Hybrid Halogen Perovskite Nanocrystals.

Mixed-halide (Cl and Br) perovskite nanocrystals (NCs) are of particular interest because they hold great potential for use in high-efficiency blue light-emitting diodes (LEDs). Generally, mixed-halide compounds are obtained by either a one-step synthesis with simultaneous addition of both halide precursors or a postsynthetic anion exchange using the opposite halogen. However, both strategies fail to prevent the formation of deep-level Cl vacancy defects, rendering the photoluminescence quantum yields (PLQYs) typically lower than 30%. Here, by optimizing both thermodynamic and kinetic processes, we devise a two-step hot-injection approach, which simultaneously realizes Cl vacancy filling and efficient anion exchange between Cl- and Br-. Both the identity of Br precursors and their injection temperature are revealed to be critical in transforming those highly defective CsPbCl3 NCs to defect-free CsPb(Cl/Br)3. The optimally synthesized NCs exhibit a saturated blue emission at ∼460 nm with a near-unity PLQY and a narrow emission bandwidth of 18 nm, which represents one of the most efficient blue emitters reported so far. The turn-on voltage of the ensuing LEDs is ∼4.0 V, which is lower than those of most other mixed-halide perovskites. In addition, LEDs exhibit a stable electroluminescence peak at 460 nm under a high bias voltage of 8.0 V. We anticipate that our findings will provide new insights into the materials design strategies for producing high-optoelectronic-quality Cl-containing perovskites.

Efficient InP/ZnSe/ZnS quantum dot shelling and the effect of a bi-layered organic-inorganic electron-transport layer on the performance of quantum dot light-emitting diode devices

We report the fabrication of red-emitting multi-shell InP quantum dots (QDs) via a two-pot synthesis method and their application to high-efficiency QD light-emitting diodes (QD-LEDs). We synthesized highly efficient and monodisperse deep-red-emitting InP/ZnSe/ZnS QDs with a photoluminescence quantum efficiency of 90% and a full width at half maximum of 49 nm using an eco-friendly phosphine precursor, tris(dimethylamino)phosphine. Furthermore, conventional QD-LED device structures in which metal oxide nanoparticles are used as the electron-transport layer (ETL) suffer from charge imbalance problems related to the charges injected from the cathode and anode. Therefore, in this study, we explored a new approach for efficiently balancing the electrons and holes, which involved the insertion of an additional organic layer of 2,2′,2"-(1,3,5-benzinetriyl)-tris(1-phenyl-1-H-benzimidazole) between the inorganic zinc magnesium oxide (ZnMgO) as ETL and LiF as electron injection layer. The bi-layered organic-inorganic ETL reduced the electron mobility and modulated charge balance, thereby enhancing the properties of the conventional QD-LED device. The QD-LED device with the bi-layered ETL was 1.35 times and 1.36 times higher than those of the QD-LED device employing a mono-layered ZnMgO ETL, respectively.

Vapor-Assisted In Situ Recrystallization for Efficient Tin-Based Perovskite Light-Emitting Diodes.

Tin-based perovskites are a promising candidates to replace their toxic lead-based counterparts in optoelectronic applications, such as light-emitting diodes (LEDs). However, the development of tin perovskite LEDs is slow due to the challenge of obtaining high-quality tin perovskite films. Here, a vapor-assisted spin-coating method is developed to achieve high-quality tin perovskites and high-efficiency LEDs. It is revealed that solvent vapor can lead to in situ recrystallization of tin perovskites during the film-formation process, thus significantly improving the crystalline quality with reduced defects. An antioxidant additive is further introduced to suppress the oxidation of Sn2+ and increase the photoluminescence quantum efficiency up to ≈30%, which is an approximately fourfold enhancement in comparison with that of the control method. As a result, efficient tin perovskite LEDs are achieved with a peak external quantum efficiency of 5.3%, which is among the highest efficiency of lead-free perovskite LEDs.

(Invited) Characterization of Semiconductor Crystals Based on Omnidirectional Photoluminescence (ODPL) Spectroscopy

The performance of optical devices based on nitride semiconductors operating in the ultraviolet and visible wavelength regimes has been remarkably improved. For example, high-efficiency blue InGaN light-emitting diodes (LEDs) with an external quantum efficiency (EQE) of over 80% was achieved [Y. Narukawa, M. Ichikawa1, D. Sanga, M. Sano, and T. Mukai, J. Phys. D: Appl. Phys. 43, 354002 (2010)], and green laser diodes (LDs) was realized [Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama and T. Nakamura, Appl. Phys. Express 2, 082101 (2009)]. Recently, deep-ultraviolet AlGaN LEDs and LDs have also become hot topics. The nitride semiconductors have been actively applied not only to optical applications but also to electronic devices such as high-voltage transistors and high-electron mobility transistors based on their high breakdown voltage and saturation electron velocity. The performance of these optical and electronic devices relies on the crystal growth technology, where quality of GaN freestanding substrate is one of the most important issues.In recent years, it has become common for the "high-quality" GaN freestanding crystals to have a threading dislocation (TD) density of 106 cm-2 or less. TD density of 106 cm-2 corresponds to an average distance between TDs of 10 μm, which means that the TDs are sparser than 1 μm, the order of the carrier diffusion length. In other words, the TDs are no longer dominant in recombination processes of minority carriers (although this is a rather broad argument). In this case, the recombination processes, especially nonradiative recombination process, are likely to be dominated by point defects and impurities rather than by the sparse TDs.In fact, a negative correlation between room-temperature (RT) photoluminescence (PL) lifetime for the near-band-edge (NBE) emission and the concentration of VGaVN (a divacancy consisting of Ga and N vacancies) has been pointed out by a combined study of time-resolved PL measurements, positron annihilation spectroscopy, and theoretical calculations [S. F. Chichibu, A. Uedono, K. Kojima, H. Ikeda, K. Fujito, S. Takashima, M. Edo, K. Ueno, and S. Ishibashi, J. Appl. Phys. 123, 161413 (2018)]. Since PL lifetime measured at RT indicates nonradiative recombination lifetime when the internal quantum efficiency (IQE) of the crystal is low, this negative correlation means that the lower concentration of VGaVN induces larger intensity of the NBE emission.Actually, we have observed PL lifetime exceeding 2 ns at RT in a GaN crystal grown by halide vapor phase epitaxy (HVPE) on m-plane GaN grown by the acidic ammonothermal method as a seed crystal [K. Kojima, Y. Tsukada, E. Furukawa, M. Saito, Y. Mikawa, S. Kubo, H. Ikeda, K. Fujito, A. Uedono, and S. F. Chichibu, Appl. Phys. Express 8, 095501 (2015)]. This is an extremely long value for a GaN crystal, which means that the nonradiative recombination lifetime is long, i.e., the IQE of the NBE emission is large. In this case, the validity of the approximation where the PL lifetime at RT is directly read into the nonradiative recombination lifetime becomes an issue.Therefore, in order to compare the quality of GaN freestanding crystals, it is important to measure the IQE as well as the PL lifetime. The IQE value for the NBE emission in semiconductor crystals is a quantity that represents the balance between radiative and nonradiative recombination processes and is directly related to the concentration of point defects and impurities that form deep levels. Therefore, the IQE can be used as an indicator of not only the energy-saving performance of optical devices but also the performance of GaN crystals as a substrate material in electronic devices.In this presentation, the characterization of semiconductors with direct bandgap by using omnidirectional photoluminescence (ODPL) spectroscopy, a technique that can determine the IQE from the EQE without the need for model calculations, will be reviewed. Using GaN, ZnO, and metal halide perovskites as examples, specific procedures and applications of IQE determination will be discussed. In particular, the ability to measure large sample crystals or wafers is one of the major features of the ODPL spectroscopy, and it is expected to be combined with mapping measurements of the entire surface of semiconductor wafers and various types of nonlinear and microscopic spectroscopy.

High-Efficiency Sky-Blue Perovskite Light-Emitting Diodes via the Trade-Off between the Electron–Phonon Coupling Loss and Defect Passivation

High-Efficiency Sky-Blue Perovskite Light-Emitting Diodes via the Trade-Off between the Electron–Phonon Coupling Loss and Defect Passivation

Synergistic effect of indium doping and chlorine surface passivation on CsPbI3 perovskite quantum dots for deep-red light-emitting devices.

Deep-red CsPbI3 perovskite quantum dots (PeQDs) are essential for high-efficiency perovskite light-emitting diodes (PeLEDs) because of their high color purity and high photoluminescence quantum yield (PLQY). The synergetic strategy of indium (In) doping and chlorine (Cl) surface passivation not only partially replaced Pb2+ ions with the smaller ionic In3+ but also filled I- vacancies by Cl- on the surface, maintaining the humidity stability for more than 24 days and yielding excellent PLQY. Benefiting from this synergetic strategy, deep-red (approximately at 683 nm) CsPbI3 PeLEDs showed a maximum luminance and external quantum efficiency (EQE) of 311 cd m-2 and 8.32%, respectively.

Benefits of using TiO2 quantum dots in producing low-cost and high-quality white light-emitting diodes

Quantum dots (QDs) is considered as a potential material for the improvement of light-emitting diodes (LEDs). However, different from the traditional phosphor materials, they have unique scattering and absorption properties affected by their several nanometers sizes, which makes their application in the production of LED confront more challenges. In addition to this, their influences on QDs-converted LEDs (QCLEDs) are rarely investigated. So as to propose solutions for those problems, in this article, we experimentally and theoretically investigated the impacts of titanium dioxide (TiO 2 )QDs’ scattering and absorption on the light quality of QCLEDs by drawing a thorough comparison between their properties and the traditional yttrium aluminum garnet phosphors characteristics. The outcomes showed that QCLEDs have poor radiant efficacy and stability due to QDs’ strong characteristic of absorption (reabsorption) while their weak scattering property causes a low uniformity in correlated color temperature (CCT). For achieving high efficiency and stability white LEDs, we highly suggest using QDs with a low concentration to get reductions in the reabsorption and total internal reflection losses. With 0.05 concentration of TiO 2 nanoparticles (TiO 2 NPs), the white LEDs can simultaneously achieve a high CCT (approximately 7500 K) and a high color rendering index (around 85).