Composition Bi4V2−xSrxO11−δ (0.05≤x≤0.20) is synthesized by melt quench technique followed by heat treatment at 800°C for 12h. These compounds are characterised by X-ray diffraction, Fourier transform infrared (FTIR) spectroscopy, UV–visible spectroscopy, impedance spectroscopy and scanning electron microscopy. X-ray diffraction patterns of all the samples show γ-phase stabilization at room temperature except x=0.05 heat treated sample. The optical band gap of all the samples is observed in semiconducting range. The lowest and the highest optical band gap is 2.39eV and 2.57eV for x=0.10 heat treated and x=0.20 quenched samples, respectively. The highest value of dielectric constant is obtained ~107 with very low dielectric loss for x=0.15 and 0.20 samples at ~350°C and below 10Hz. The grain size increases with dopant concentration leads to increase the dielectric constant.