High Depth Of Focus Research Articles

Mask-less Laser Direct Imaging & Adaptive Patterning for Fan-Out Heterogeneous Integration

Mask-less Laser Direct Imaging & Adaptive Patterning for Fan-Out Heterogeneous Integration

Extend 0.33 NA extreme ultraviolet single patterning to pitch 28-nm metal design by low-n mask

Extending 0.33 NA extreme ultraviolet single patterning to 28-nm pitch becomes challenging in stochastic defectivity, which demands high-contrast lithographic images. The low-n attenuated phase-shift mask (attPSM) can provide superior solutions for individual pitches by mitigating mask three-dimensional effects. The simulation and experiment results have shown substantial imaging improvements: higher depth of focus at similar normalized image log slope and smaller telecentricity error values than the best binary mask configuration. In this work, the exploration of low-n attPSM patterning opportunity for pitch 28-nm metal design is investigated. Using generic building block features, the lithographic performance of the low-n attPSM is compared with the standard binary Ta-based absorber mask. In addition, the impact of mask tone (bright field (BF) versus dark field) on the pattern fidelity and process window is evaluated both by simulations and experiments. The results indicate that BF low-n attPSM provides the best patterning performance. Consequently, the BF low-n attPSM patterning performance is assessed with an actual imec N3 pitch 28-nm random logic metal design. The wafer data indicate BF low-n attPSM enables good patterning fidelity, as well as good overall process window with high exposure latitude (∼20 % ).

Optimization of displacement Talbot lithography for fabrication of uniform high aspect ratio gratings

Displacement Talbot lithography can rapidly pattern periodic nanostructures with high depth of focus over large area. Imperfections in the phase mask profile and the stage movement inaccuracies during the exposure cause linewidth variation in every second line of binary gratings. While this beating is barely visible in patterned photoresist, it leads to substantial depth variation when transferred into high aspect ratio silicon structures, because of micro-loading in deep reactive ion etching. A proper scan range compensated the defect, and a beating-free grating with pitch size of 1 μm and aspect ratio of 54:1 is demonstrated.

Integration of multiple theories for the simulation of laser interference lithography processes

The periodic structure of laser interference lithography (LIL) fabrication is superior to other lithography technologies. In contrast to traditional lithography, LIL has the advantages of being a simple optical system with no mask requirements, low cost, high depth of focus, and large patterning area in a single exposure. Generally, a simulation pattern for the periodic structure is obtained through optical interference prior to its fabrication through LIL. However, the LIL process is complex and combines the fields of optical and polymer materials; thus, a single simulation theory cannot reflect the real situation. Therefore, this research integrates multiple theories, including those of optical interference, standing waves, and photoresist characteristics, to create a mathematical model for the LIL process. The mathematical model can accurately estimate the exposure time and reduce the LIL process duration through trial and error.

Investigation of a surface defect and its elimination in automotive grade galvannealed steels

The galvannealed coating have gained importance as a potential solution for auto body panels owing to their superior performance like weldability, paintability and after painting corrosion resistance. Efficient production of galvannealed strip through hot dip galvanising and subsequent annealing root is a challenge as occurrence of surface defects results in material downgrading and rejection. The present work deals with one type of surface defect present at the bottom surface of the galvannealed strip with high defect severity. The defect appearance was like a shining spot by naked eye. It was characterised using Optical Microscope, Scanning Electron Microscope coupled with Energy Dispersive Spectroscopy to analyse shape, size, morphology and composition. The defect was further analysed by Confocal Laser Scanning Microscope (CLSM). The features of CLSM like high resolution, high depth of focus, 3D surface topography were useful in determining the relative depth of the defect at different regions. The results indicated that the defect occurrence was due to mechanical abrasion of coating with deposited dust of Fe–Zn intermetallic phases at the galvannealing tower top roll. The production line parameters were modified to maintain the temperature and cleanliness of the top roll and a reduction in defect severity was achieved.

A New Type of TSV Defect Caused by BMD in Silicon Substrate

This paper reports on a new type of through-silicon via (TSV) defect, silicon fin defect, which was found after TSV deep-reactive-ion-etching (DRIE) process for TSV integration with front-end-of-line (FEOL) devices. One possible root cause for this defect is that the bulk micro defect (BMD) in silicon substrate serves as a micro-mask during etching and results in silicon fin defects at TSV bottom. These defects have to be eliminated as they are killer TSV defects for several reasons: (1) could serve as a weak point for isolation liner deposition; (2) could be a weak point for barrier/seed layer deposition; and (3) may cause mechanical failures during TSV backside reveal. Previously, silicon fin defects were removed by switching to a non-BMD silicon substrate for interposer application. However, for TSV integration with FEOL devices, the BMD layer serves as an intrinsic gettering layer for devices, therefore, it cannot be removed from the silicon substrate, which makes it challenging to get rid of silicon fin defects. In order to establish a non-destructive in-line detection method of the fin defects, scanning electron microscope (SEM) automatic process inspection (API) was set up to image the fin defects at the bottom of the trench. A special working point with high depth of focus (DoF) and contrast was created to obtain good top-down SEM imaging of the defects at the bottom of this high-aspect-ratio (HAR) structure. Three types of silicon substrates (A, B, and C) were used for this study to investigate the potential root cause. SEM API results show defect rates of 20%, 3.3% and 0% for substrates A, B, and C, respectively. This is in good agreement with both BMD simulation results and benchmarking data in which substrates A, B, and C had normalized BMD densities of 11.7, 5.74, and 1 cm-3, respectively, with a comparable BMD size of 80~90 nm and a denuded zone (DNZ) depth of 10~15 μm. The correlation between BMD density in a silicon substrate and silicon fin defect rate indicates that BMD is a key root cause for silicon fin defects. To eliminate silicon fin defects, an optimized DRIE process has been developed. On the same type of substrate, the DRIE process with a typical voltage bias results in a defect rate of 6.7%, while no silicon fin defect was detected out of 200 TSVs with a polynomial bias ramp to relatively higher final voltage bias during the last 15 μm etch. The hypothesis is that higher voltage bias is able to sputter away BMD and shows potential to get rid of the silicon fin defects at the TSV bottom. In summary, a capable inspection method, a preferred silicon substrate with BMD spec range, and a promising way for DRIE process optimization to eliminate the silicon fin defect at the TSV bottom have been identified and developed in this work. Detailed results and analysis, particularly the fin defect images, statistical inspection results, BMD benchmarking data, simulation results, and TSV profile with optimized process will be discussed in the paper.

Holistic Measurement in the Sheet-Bulk Metal Forming Process with Fringe Projection

Sheet bulk metal forming is a new forming technology, currently developed by several companies and research institutes. It creates high demands on the inspection of parts and tools, especially in the field of in-situ abrasion detection of the forming tool and its impacts on the work piece. This manuscript introduces two optical testing methods for fulfilling these inspection tasks: On the one hand the endoscopic fringe projection as a flexible small scale optical measurement principal with high depth of focus and accuracy for the acquisition of filigree form elements for a continuous abrasion determination and one the other hand the multi-scaled fringe projection for a holistic one shot measurement of the work piece for an adapted, multiscale deviation analysis. The development and advantages of both systems for the sheet bulk metal forming process are shown as well as potentials of the combination of the both systems close to the proposed application next to the production line.

Generation of a high depth of focus with constant transversal spot size using a phase-only pupil filter

A novel approach is proposed to obtain an extended depth of focus (DoF) in white light with constant transversal spot size within the DoF. It combines a phase-only pupil filter based on multiplexed radial zones with alternating quartic phase functions. The design is first tested via numerical simulations of the point spread function (PSF) based on the scalar diffraction theory. The results for a fourfold gain of the depth of focus are experimentally verified with a phase-only spatial light modulator liquid crystal device combined with a 3D PSF measurement system. A close conformity between the experimental and simulation results proves the effectiveness of the proposed approach.

Holographic display of synthetic 3D dynamic scene

A synthetic scene of real-word objects is obtained through the multiplexing of several digital holograms. Moreover, by an opportune numerical hologram deformation, it is possible to synthesize 3D dynamic scenes that can be displayed by means of a spatial light modulator. In fact, the spatial adaptive deformation of digital holograms allows the control of the object position and size in a 3D volume with a high depth of focus. Through this novel technique a 3D dynamic scenes can be projected as an alternative to difficult and heavy computations needed to generate realistic-looking computer generated holograms. Finally we report the result of a pilot experiment to evaluate how viewers perceive depth in a conventional single-view display of these dynamic 3D scenes.

High depth of focus by combining annular lenses

In some technological applications, optical systems that produce a high depth of focus and superresolving transversal responses are required. In this paper we present a pupil design consisting in a phase pupil with binary amplitude, that added to a conventional optical system, can accomplish these goals. The pupil function is characterized by a complex amplitude that consists basically in combining two annular lenses with different focal length. Meanwhile the central portion of the pupil has an amplitude equal to 0, the external portion is modulated with two quadratic phases each one covering an annular zone. One of the phases corresponds to a convergent lens and the other to a divergent lens. The effect on the incident wavefront is to redirect the light in front of and behind the best image plane (BIP) producing a widened focus. The evolution of the transverse gain for the extended focus is also studied. Experimental results are given, and they confirm the extended focus and the superresolving behavior of the proposed pupil function.

Enlarging the depth of focus by filtering in the phase-space domain

The ambiguity function was employed as a merit function to design an optical system with a high depth of focus. The ambiguity function with the desired enlarged-depth-of-focus characteristics was obtained by using a properly designed joint filter to modify the ambiguity function of the original pupil in the phase-space domain. From the viewpoint of the filter theory, we roughly propose that the constraints of the spatial filters that are used to enlarge the focal depth must be satisfied. These constraints coincide with those that appeared in the previous literature on this topic. Following our design procedure, several sets of apodizers were synthesized, and their performances in the defocused imagery were compared with each other and with other previous designs.

Evolution of the transverse response of an optical system with complex filters

In many optical systems a specific axial behaviour is needed. It is very common to search for high focal depth and an almost constant distribution along the axial coordinate. An additional condition to be required could be symmetrical axial response. The transverse response in the best image plane is also of great importance, for instance to produce superresolution. Moreover, the invariance of the transverse response in defocused planes could be a requirement for an optical system. In this paper, we study the transverse response at defocused planes produced by complex filters with high focal depth. In order to analyze the transverse responses we extend the transverse gain factor for defocused planes. Here, we derive several conditions that complex filters may satisfy to produce symmetrical axial response. Numerical examples of transverse responses for some filters that produce high depth of focus are shown.

Simple expressions for performance parameters of complex filters, with applications to super-Gaussian phase filters.

To study the three-dimensional (3-D) behavior produced by complex filters, we have extended the expressions for the axial and the transverse gain to the case in which the best image plane is not near the paraxial focus. Super-Gaussian phase filters are proposed to control the 3-D image response of an optical system. Super-Gaussian phase filters depend on several parameters that modify the shape of the phase filter, producing tunable control of the 3-D response of the optical system. The filters are capable of producing a wide range of optical effects: transverse superresolution with high depth of focus, 3-D superresolution, and transverse apodization with different axial responses.

Symmetry properties with pupil phase-filters

Pupil filters can modify the three dimensional response of an optical system. In this paper, we study different pupil symmetries that produce a predictable image behavior. We show that different pupil-filters that satisfy certain symmetry conditions can produce axial responses which are either identical or mirror reflected. We also establish the differences in the symmetry properties between amplitude-only filters and phase-only filters. In particular, we are interested in phase filters that produce transverse superresolution with axial superresolution or high depth of focus.

Contact Hole Resist Solutions for 45-90nm Node Design Rules

Target contact hole (C/H) CD sizes for 45-90nm node design rules range from 70 to 130nm with defect levels of one failure per billion contacts. Achieving these C/H design rule targets is a challenging task for the lithographers and the resist chemists. The issue is lack of high resolution and DoF especially for the 65 and 45nm node targets, low depth of focus (DoF) for the isolated contacts even for the 90nm node targets (hence the loss of desired overlap process windows) and high mark error factor (MEF) for the dense contacts. Several resolution enhancement techniques (RETs) such as chromeless phase lithography (CPL), double exposure technique IDEAL and IDEAL-Smile, use of high transmission attPSM have been proposed but none of them have been proven in real production and comes with compromises. The best option and expectation is 193nm resist formulations to deliver the desired targets. While improvements in resolution and process margins are seen and more progress will come as the maturity of the 193nm resists continue, use of resist flow process (RFP) and chemical shrink processes are also being considered at least for the 65nm node and above. Undoubtedly, the resist flow process is the easiest one to implement but it is pitch dependent and therefore does not find global acceptance. Shrink processes such as Resolution Enhancement of Lithography Assisted by Chemical Shrink (RELACSTM in combination of a high performance 193nm resist offers the best promise for the 65-45nm node targets and may be extendable to beyond 45nm node design targets. This paper provides the current status and performance of advanced 193nm single layer resist and the developments in the RELACSTM.

Frequency response characteristics of a birefringent lens

The diffraction-based optical frequency response characteristic of a birefringent crystal lens sandwiched between two linear polarizers has been studied analytically using the autocorrelation of the pupil function over the lens aperture. The optical transfer function (oTf) of this proposed system depends on the material as well as design parameters of the crystal lens, along with the orientations of the transmission axes of the two polarizers relative to each other and to the optic axis of the birefringent lens. Naturally, the OTF of such a system can be varied at the lens fabrication stage like other lenses. An online variation of the OTF is also possible just by rotating any of the two polarizers included in the system. It has been shown that the proposed system can be adapted either for apodization or for super-resolution simply by rotating any of the two polarizers. This system may be designed for obtaining high depth of focus without significant image degradation, as well as for image processing operations like high frequency enhancement. The response of the system is studied at the Gaussian image plane as a function of the line frequencies in the object for different values of the birefringent lens parameters, and also for two different settings of the analyzer. The results are compared with the response of an ideal lens.

High focal depth with a quasi-bifocus birefringent lens

The Strehl definition along the axis of a birefringent lens sandwiched between two polarizers is studied analytically. The optic axis of the birefringent lens made of a uniaxial crystal is perpendicular to the lens axis, and the system behaves like a bifocus lens for proper orientation of the polarizers. The Sparrow criterion is employed for designing an imaging system with high depth of focus. It is shown that, when the two foci are separated by the Sparrow limit of resolution, the focal depth is maximum and the intensity point-spread function remains almost identical within this limit. The resolution according to the Rayleigh criterion in this zone is more than that of an ideal lens.

Lithography with high depth of focus by an ion projection system

It is reported that ion projection lithography has been developed to generate structures with minimum feature sizes in the 100-nm range with a high pixel transfer rate. The high depth-of-focus resulting from the telecentric beam path concept is noted. A silicon wafer exhibiting 200- mu m-deep cavities, which were fabricated by anisotropic etching, was patterned with a grating of 0.6- mu m periodicity running with identical spacings from the bottom to the top. SiO/sub 2/ served as an inorganic ion sensitive resist. Exposed to 73 keV helium ions, the SiO/sub 2/ showed an enhanced etching rate in hydrofluoric acid, the structure developing agent. The application of patterning techniques considered is thought to be promising for the fabrication of two-dimensional reflecting mirrors or sensoric elements distributed on spherical surfaces. >

Flow visualization in a scanning electron microscope scale

This paper describes a method of visualizing the two-dimensional flow around small bodies by means of a scanning electron microscope (SEM). The advantages, compared to light microscopic methods, are, for example, a greater distance between objective lens and object, a higher depth of focus and the possibility of observing smaller details. The disadvantages are the restriction to certain fluids and the expensive equipment. The described method may be important for the investigation of stationary objects as well as that of unsteady flow. In the near future we shall try to visualize three dimensional flow in a scanning electron microscope scale.

In environmental Scanning Electron Microscopy, the secondary electron signal reveals surface information not accessible by conventional backscattered electron signals

Environmental scanning electron microscopes (ESEM) operate at high as well as at low vacuum (<2.5 kPa: ~20 Torr) but utilize all advantages of conventional high vacuum SEM (large specimen size, high depth of focus and specimen tilt capability, TV-rate scanning for imaging dynamic events). They have the advantage of imaging wet specimens as well as insulators without the need of any specimen preparation. Previously, environmental scanning microscopy was restricted to the BSE signal collected with BSE detectors. SE signals cannot be collected with the Everhart-Thornley detector because it cannot operate at low vacuum. Using positively biased electron collectors, it is now possible to collect an SE signal. However, the origin and quality of this signal need to be further characterized.An ElectroScan ESEM was used equipped with SE and BSE detectors and operated at 7-30 kV with partial water pressures of 0.1-2.5 kPa (∼1-20 Torr).