High-density Optical Interconnects Research Articles

Reduced turn-on delay time in 1.3-μm InGaAsP-InP n-type modulation-doped strained multiquantum-well lasers with a buried heterostructure

A reduction in both the threshold current and carrier lifetime is demonstrated, for the first time, in an n-type modulation-doped InGaAsP strained multiquantum well laser with a buried heterostructure. Threshold current and carrier lifetime is reduced by 10% and 15%, respectively, as compared with a undoped MQW laser, which results in a 35% decrease in the turn-on delay time. This confirms the suitability of this type of laser for use as a light source for high-density parallel optical interconnection.

Ultralow threshold 1.3-μm InGaAsP-InP compressive-strained multiquantum-well monolithic laser array for parallel high-density optical interconnects

An ultralow-threshold 1.3-/spl mu/m InGaAsP-InP 10-element monolithic laser array is achieved through careful optimization of a strained multiquantum-well active layer, especially the amount of strain, the well thickness, the barrier thickness, the number of wells, and the active laser width. This array has a record-low threshold current, highly uniform threshold current characteristics (1.3/spl plusmn/0.09 mA and slope efficiency of 0.37/spl plusmn/0.01 W/A), extremely low operating current of 14 mA under 5-mW output power, and long-term reliability. This array is suitable as light sources for a parallel high-density optical interconnection system. In addition, a record low CW threshold current of 0.58 mA at 20/spl deg/C and 1.62 mA at 90/spl deg/C, as a long-wavelength laser, is obtained by employing a short cavity (100 /spl mu/m) uith high-reflection coatings. >

Ultralow threshold and uniform operation (1.3/spl plusmn/0.09 mA) in 1.3-μm strained-MOW 10-element laser arrays for parallel high-density optical interconnects

An ultralow-threshold 1.3-μm InGaAsP-InP 10-element monolithic laser array is achieved through careful optimization of a strained-MQW active layer. This array has a record-low threshold current, highly uniform threshold current characteristics (1.3/spl plusmn/0.09 mA and slope efficiency of 0.37/spl plusmn/0.01 W/A), and long-term reliability. This array is suitable as light sources for a parallel high-density optical interconnection system.