High Carrier Mobility Research Articles

High Ambipolar Mobility and Long-Range Carrier Transport in Violet Phosphorus Nanosheet.

Carrier transport capacity with high mobility and long-range diffusion length holds particular significance for the advancement of modern optoelectronic devices. Herein, we have unveiled the carrier dynamics and transport properties of a pristine violet phosphorus (VP) nanosheet by a transient absorption microscopy. Under the excitation (2.41 eV) above the exciton band, two photoinduced absorption peaks with the energy difference of approximately 520 meV emerge within a broadband transient absorption background which originates from the prompt generation of free carriers and the concomitant formation of excitons (lifetime of 467.21 ps). This observation is consistent with the established band-edge model of VP. Intriguingly, we have determined the ambipolar diffusion coefficient and mobility of VP to be approximately 47.32 cm2·s-1 and 1798 cm2·V-1·s-1, respectively, which further indicate a long-range carrier transport of approximately 2.10 μm. This work unveils the significant carrier transport capacity of VP, highlighting its potential for future optoelectronic and excitonic applications.

Wafer‐Scale Fabrication of Broadband Sb2Se3 Photodetectors and their Multifunctional Optoelectronic Applications

AbstractLow‐dimensional van der Waals materials (vdWMs) have attracted worldwide interest on account of numerous advantages including self‐passivated surface, high carrier mobility, excellent flexibility, etc. Among multiple vdWMs, Sb2Se3 stands out due to its high light absorption coefficient, environmentally friendly components, excellent stability, and abundant reserve. However, limited effective wavelength range and unscalable preparation have been obstinate issues standing in the way of further development. Herein, pulsed‐laser deposition (PLD) has been developed for synthesizing Sb2Se3 nanofilms, and wafer‐scale deposition has been realized. The PLD‐derived Sb2Se3 photodetector demonstrates broadband photoresponse across UV to NIR. First‐principles calculations have determined that this is because the formation of Se vacancies can result in a reduction of the bandgap. Upon 635 nm illumination, an optimal responsivity of 2.68 A W−1 has been achieved, corresponding to an external quantum efficiency of 524% and a specific detectivity of 1.34 × 1012 Jones. Furthermore, the device manifests a short response/recovery time of ≈2/1 ms. Proof‐of‐concept broadband imaging as well as fitness monitoring (respiratory rate & heart rate) have been realized. Profited from the scalable preparation, an array of Sb2Se3 photodetectors have been produced, exhibiting qualified device‐to‐device variation. On the whole, this study has depicted an attractive landscape for next‐generation integrated optoelectronics.

A Flexible MXene-Black Phosphorus/Zinc Oxide Hybrid Structure with Excellent UVA-Specific Photoelectric Sensing Properties for Human Skin Protection.

Ultraviolet A (UVA) radiation causes various irreversible damages to human skin, so the research about UVA-specific sensing device is urgent. 2D black phosphorus (BP) is used in many photosensors due to its advantages of high carrier mobility and tunable bandgap, but its application for UVA-specific photosensor is not reported. Here, a MXene-BP/Zinc oxide (ZnO) hybrid structure with lamellar-spherical interfaces like finger lime fruit is prepared by the layer-by-layer assembly (LLA) method, and p-n junctions are constructed between BP and ZnO with the Ti3C2Tx electrode, showing excellent photoelectric performance. Density functional theory (DFT) calculations demonstrate that the enhanced performance is attributed to the rapid separation of photogenerated carriers in the presence of a built-in electric field at interface. Furthermore, a flexible MXene-BP/ZnO based UVA-specific photosensor is prepared, which shows a specific response to UVA as high as 7 mAW-1 and excellent mechanical stability, maintaining 98.46% response after 100 bending cycles. In particular, the integrated anti-UVA skin protection device shows excellent UVA-specific identification and wireless transmission capability, which can provide timely UVA exposure information and skin protection warning for the visually impaired. This work demonstrates a new approach for further developments of advanced photoelectric sensing technology toward improving people's skin health protection.

Triaxial strain enhanced thermoelectric performance and conversion efficiency in Tl3TaSe4

Thermoelectric (TE) materials have garnered significant attention due to their potential in converting waste heat into useful electrical energy. Strain engineering has emerged as a promising strategy for tailoring the properties of materials, offering opportunities to optimize TE performance. In this study, we employ first-principles calculations to investigate the electronic and thermal transport properties of cubic Tl3TaSe4 under triaxial strain. Our results demonstrate that tensile strain can reduce the effective mass of carriers and contribute to high carrier mobility. The phonon calculation and AIMD simulation reveal excellent dynamic stability and thermal stability of Tl3TaSe4 both with and without strain. The red shift phenomenon of phonon vibration modes and the higher portion of phonon DOS in the low frequency region indicate that tensile strain enhances the anharmonicity of Tl3TaSe4. In addition, triaxial tensile strain can effectively reduce the heat capacity, group velocity, and phonon lifetime, while enhancing the anharmonicity of Tl3TaSe4, which contributes to the lower κl. Compared to the condition without strain, the room temperature κl of Tl3TaSe4 under 1 % and 2 % tensile strain is reduced by about 43 % and 79 %, respectively. Furthermore, the tensile strain exhibits a positive enhancement effect on the ZT value of Tl3TaSe4. At 700 K, the optimal ZT values of p-type and n-type Tl3TaSe4 under 2 % tensile strain are 1.31 and 0.94, respectively, which are three times higher than that of 0.4 and 0.33 without strain. Finally, the TE conversion efficiency of Tl3TaSe4 under 2 % tensile strain is 6.8 %, which is higher than BiCuSeO and α-Cu2+xSe, and comparable to SnSe. Our results demonstrate the effectiveness of triaxial tensile strain in enhancing the phonon scattering, reducing the κl, and improving the TE properties of Tl3TaSe4.

Design considerations of CdSe solar cells for indoor applications under white LED illumination

This work sheds light on the potential of Cadmium Selenide (CdSe) solar cells for indoor applications. CdSe boasts a wide direct bandgap, high carrier mobility, and a high absorption coefficient, making it an attractive candidate for harnessing ambient indoor light. Our study centers around an experimental solar cell architecture composed of FTO/CdSe/PEDOT:PSS/CuI/ITO, which exhibits a power conversion efficiency (PCE) of 6.00 %. Through a meticulous analysis of the core technological aspects of this cell, we successfully replicate the measured current-voltage characteristics and other experimental data, affirming the validity of our simulation modeling approach. Moving forward, we delve into the design and optimization of CdSe-based solar cells under white LED illumination. We emphasize the pivotal role of a double-hole transport layer (HTL) configuration over a single HTL, with a focus on optimizing the alignment between the HTL/back contact and HTL/absorber interfaces. The strategic incorporation of a heavily doped p-type HTL material, boasting both a deep valence band maximum (VBM) and a shallow conduction band minimum (CBM), is identified as paramount, especially for a deep VBM absorber like CdSe. Adding double HTL materials also facilitates efficient hole collection within the CdSe thin film while mitigating undesirable electron-hole recombination at the critical interface between the hole collection layer and the electrode. The implementation of a double HTL configuration based on CuI/ZnTe:Cu or CuI/BCS significantly enhances performance, resulting in a PCE in the order of 20 % under 200 lux and 2900 K LED illumination. Moreover, we introduce the single HTL design to provide other alternatives for efficiency boosting. Upon increasing the work function of the front contact, it is found that the valence band offset between the HTL and the absorber can be engineered, resulting in a PCE above 21.5 %.

Single-Layer InGeS: Robust direct Bandgap, super high electron Mobility, long-lived Carriers, and Ohmic contact for Next-Generation Field-Effect transistors

Two-dimensional (2D) materials holding appropriate bandgaps, high carrier mobility, and long carrier lifetime require to be urgently explored as electronic devices such as field effect transistors (FETs) become more and more miniaturized. Herein, single-layer (SL) InGeS is thoroughly investigated using first-principles calculations. Theoretical results confirm SL InGeS has nice thermal and dynamical stability at 300 K. SL InGeS holds a direct bandgap of 1.28 eV by HSE06, and its electrons and holes are inherently located at different atomic regions. In the visible range, SL InGeS displays a maximum optical absorption of ∼ 5 × 105 cm−1, surpassing that of most known 2D materials. Furthermore, SL InGeS possesses high electron mobility (∼11100 cm2 V−1 s−1) and relatively low hole mobility (∼1000 cm2 V−1 s−1), and its carrier lifetime is as long as 4.99 ns. In addition, an Ohmic contact is designed in the graphene/InGeS heterojunction, implying small current resistance. In brief, all these scientific findings promise SL InGeS is a hopeful candidate in ultrathin FET devices.

Structural changes in Ge1−xSnx and Si1−x−yGeySnx thin films on SOI substrates treated by pulse laser annealing

Ge1−xSnx and Si1−x−yGeySnx alloys are promising materials for future opto- and nanoelectronics applications. These alloys enable effective bandgap engineering, broad adjustability of their lattice parameter, exhibit much higher carrier mobility than pure Si, and are compatible with the complementary metal-oxide-semiconductor technology. Unfortunately, the equilibrium solid solubility of Sn in Si1−xGex is less than 1% and the pseudomorphic growth of Si1−x−yGeySnx on Ge or Si can cause in-plane compressive strain in the grown layer, degrading the superior properties of these alloys. Therefore, post-growth strain engineering by ultrafast non-equilibrium thermal treatments like pulse laser annealing (PLA) is needed to improve the layer quality. In this article, Ge0.94Sn0.06 and Si0.14Ge0.8Sn0.06 thin films grown on silicon-on-insulator substrates by molecular beam epitaxy were post-growth thermally treated by PLA. The material is analyzed before and after the thermal treatments by transmission electron microscopy, x-ray diffraction (XRD), Rutherford backscattering spectrometry, secondary ion mass spectrometry, and Hall-effect measurements. It is shown that after annealing, the material is single-crystalline with improved crystallinity than the as-grown layer. This is reflected in a significantly increased XRD reflection intensity, well-ordered atomic pillars, and increased active carrier concentrations up to 4 × 1019 cm−3.

First-principles study of the effect of Dirac phonons on the thermoelectric properties in monolayer Ge2H2

The Dirac phonons have been widely attention due to their unique edge or surface states. However, research on their influence in the realm of thermoelectric transport in semiconductor materials remains limited. Here, we have systematically investigated the geometric structure, stability, electronic, thermal conductivity, and thermoelectric properties of the monolayer Ge2H2 and Ge2 based on density functional theory and the Boltzmann transport equation (BTE). The phonon spectrum of monolayer Ge2H2 exhibits both Hourglass-type and Dirac-type phonon dispersion curves. The band structure of monolayer Ge2H2 reveals a relatively large band gap of 1.02 eV (1.75 eV for HSE), indicating that it is a direct band gap semiconductor. These two features make monolayer Ge2H2 an ideal material for exploring the effect of Dirac phonons on thermoelectric transport properties. In this paper, we determined that the lattice thermal conductivity (κl) in Ge2H2 is 0.59 Wm−1K−1 at 300 K, but undergoes a sharp increase upon removal of H atoms. This is mainly attributed to the disappearance of the Dirac phonons and the change of lattice vibration modes by removing the H atoms. While also exhibiting high carrier mobilities (134.86 cm2/Vs for holes) and extended scattering time (4.22 × 10−14 s for holes), indicative of excellent thermoelectric performance. With increasing temperature, the ZTmax of p-type doping reaches 0.63 at 700 K in Ge2H2. Remarkably, at 300K, the Hourglass-type phonon contributes only 5.94 % to κl, while the Dirac phonon contributes 3.44 %. Further analysis reveals that the Dirac phonon within Hourglass-type in monolayer Ge2H2 contributes 2.5 % to the ZTmax at 300K. Our investigation elucidates the impact of Dirac phonons on thermoelectric properties, providing valuable insights for future design and exploration of high-ZT thermoelectric materials.

Bulk photovoltaic effect and high mobility in the polar 2D semiconductor SnP2Se6.

The growth of layered 2D compounds is a key ingredient in finding new phenomena in quantum materials, optoelectronics, and energy conversion. Here, we report SnP2Se6, a van der Waals chiral (R3 space group) semiconductor with an indirect bandgap of 1.36 to 1.41 electron volts. Exfoliated SnP2Se6 flakes are integrated into high-performance field-effect transistors with electron mobilities >100 cm2/Vs and on/off ratios >106 at room temperature. Upon excitation at a wavelength of 515.6 nanometer, SnP2Se6 phototransistors show high gain (>4 × 104) at low intensity (≈10-6 W/cm2) and fast photoresponse (< 5 microsecond) with concurrent gain of ≈52.9 at high intensity (≈56.6 mW/cm2) at a gate voltage of 60 V across 300-nm-thick SiO2 dielectric layer. The combination of high carrier mobility and the non-centrosymmetric crystal structure results in a strong intrinsic bulk photovoltaic effect; under local excitation at normal incidence at 532 nm, short circuit currents exceed 8 mA/cm2 at 20.6 W/cm2.

Study on the Preparation and PEC-Type Photodetection Performance of β-Bi2O3 Thin Films.

Bismuth-based compounds have been regarded as a kind of promising material due to their narrow bandgap, high carrier mobility, low toxicity, and strong oxidation ability, showing potential applications in the field of photoelectrochemical (PEC) activities. They can be applied in sustainable energy production, seawater desalination and treatment, optical detection and communication, and other fields. As a member of the broader family of bismuth-based materials, β-Bi2O3 exhibits significant advantages for applications in engineering, including high photoelectric response, stability in harsh environments, and excellent corrosion resistance. This paper presents the synthesis of β-Bi2O3 thin films utilizing the mist chemical vapor deposition (CVD) method at the optimal temperature of 400 °C. Based on the β-Bi2O3 thin film synthesized at optimal temperature, a PEC-type photodetector was constructed with the highest responsivity R of 2.84 mA/W and detectivity D of 6.01 × 1010 Jones, respectively. The photodetection performance was investigated from various points like illumination light wavelength, power density, and long-term stability. This study would broaden the horizontal and practical applications of β-Bi2O3.

Four-state Fano resonance electro-optical modulator and sensor based on double borophene-dielectric grating structure

In this paper, we propose a borophene-based double-dielectric-grating structure (BDDGS) to realize the Fano resonance electro-optical modulator and sensor. The Fano resonance originated from the coupling of two resonance modes excited by the upper borophene grating (UBG) and the lower borophene grating (LBG). The coupling mode theory (CMT) is utilized to fit the Fano transmission spectrum. The calculated result fits well with the simulated spectrum. We found the Fano resonance wavelengths exhibit a blue shift with increasing the carrier density of the borophene layer. Further, we utilize this property to achieve a Four-state Fano resonance electro-optical modulator. The working wavelengths of the ON-ON (11), ON–OFF (10), OFF–ON (01), and OFF-OFF (00) states are 1.321 μm and 1.676 μm, respectively. The asymmetric Fano spectra exhibit high sensing sensitivity S=21THz/RIU and figure of merit FOM=3.9RIU−1. Moreover, our proposed structure possesses a slow-fast light effect with the maximum group index are 57.84 and −332.3, respectively. Although several Fano resonance and electro-optical modulators based on two- dimensional (2D) material, like graphene, black phosphorus, and transition metal dichalcogenides (TMDs) are previously reported, this paper designed a borophene-based metamaterial to achieve Fano resonance electro-optical modulator and sensor, because borophene possesses a series of excellent physical and chemical properties, for example, mechanical compliance, high carrier mobility, and optical transparency. Therefore, the proposed borophene-based metamaterial will be beneficial in the fields of high-performance plasmonic sensors, slow light, and electro-optical modulators in the near future.

Direct observation of the electronic structure and many-body interactions of low-mobility carriers in perylene diimide derivative

Despite the rapid progresses in the field of organic semiconductors, aided by the development of high-mobility organic materials, their high carrier mobilities are often unipolar, being sufficiently high only for either electrons or holes. Yet, the basic mechanisms underlying such significant mobility asymmetry largely remains elusive. We perform angle-resolved photoelectron spectroscopy to reveal the occupied band structures and the many-body interactions for low-mobility hole carriers in a typical n-type semiconductor perylene diimide derivative. The band dispersion exhibits strong renormalization to the calculated non-interacting electronic structure. The analysis including many-body interactions elucidate that the significant mass enhancement can be understood in terms of strong charge–phonon coupling, leading to an important mechanism of polaron band transport of low intrinsic carrier mobility in organic semiconductors.

Highly sensitive near-field leakage-enhanced optical fiber SPR sensor based on gold nanoarrays modulation

A novel near-field leakage-enhanced optical fiber surface plasmon resonance (NLF-SPR) sensor based on the synergistic sensitization of cuboid gold nanoarrays and WSe2 film is proposed for the first time to our knowledge. The sensor is composed of a side-polished multimode fiber, a continuous gold film, a continuous tungsten selenide (WSe2) film, and well-arranged cuboid gold nanoarrays. The sensor leverages the high carrier mobility characteristic of the WSe2 film, the near-field leakage enhancement arising from the nanoarrays structure, and the localized electric field enhancement property introduced by nanotips to enhance the refractive index sensitivity. In order to optimize the spectral characteristic, the modulation of electric field distribution and spectral characteristic by the structural parameters of gold nanoarrays is investigated through three-dimensional (3D) finite element simulation. Results show that in the refractive index range of 1.3332–1.3432 refractive index unit (RIU), the average sensitivity of the NLF-SPR sensor can reach up to 10108 nm/RIU, and the highest sensitivity can reach up to 14692.46 nm/RIU. The average sensitivity and the highest sensitivity are 1.87 times and 2.56 times higher, respectively, than those of the side-polished fiber SPR sensor with a monolayer gold film. Furthermore, the experimental results demonstrate that the near-field leakage enhancement introduced by gold nanoarrays improves the performance of the fiber SPR sensor, resulting in a 49.3 % increment in sensitivity. The experimental results are in agreement with the trend of the simulation results. Even better performance improvements have been achieved compared to existing methods and a more flexible approach to performance tuning is provided. With the maturity and development of various nanoarray processing techniques such as focused ion beam, electron beam lithography, and nanoimprint lithography, the proposed NLF-SPR sensor has the potential to be fabricated on a large scale and is expected to be widely employed in biomedical, clinical applications, and other fields.

Improving thermoelectric properties in double half-Heusler M8FexNi8−xSb8 (M = TiZrHfNb)-InSb compounds via synergistic multiscale defects and high-mobility carrier injection

In this study, the modulation doping strategy combined with atomic-scale engineering is applied to the Double half-Heusler (DHH) system. Thermoelectric properties of multi-principal-element alloy Ti2Zr2Hf2Nb2FexNi8−xSb8 are first improved through composition optimization and then modulation doping with nano-InSb. First-principles calculations indicate that strong phonon anharmonicity results in low intrinsic lattice thermal conductivity (κL). Synergistic high-mobility carrier injection and multiscale defects caused by lattice distortion, sluggish diffusion effect, and inhomogeneous doping decouple electron and phonon transport that extrinsically intensified phonon scattering and optimized carrier transport. Consequently, the ZTmax values of nano-InSb doped p-type (x = 5.6) and n-type (x = 2.4) samples are 0.6 and 0.36, respectively, which increased by 663 % and 350 %, compared with the InSb-free x = 5 sample. The corresponding κL near room temperature are as low as ∼2.7 and ∼2.3 W m−1 K−1, respectively. Furthermore, the p-type composition exhibits a relatively high power factor (∼2 mW m−1 K−2), and the n-type samples show negligible bipolar effects at high temperatures. This work provides a novel strategy for the optimization of thermoelectric properties in DHH compounds.

Silicon Carbide Microring Resonators for Integrated Nonlinear and Quantum Photonics Based on Optical Nonlinearities

Silicon carbide (SiC) electronics has seen a rapid development in industry over the last two decades due to its capabilities in handling high powers and high temperatures while offering a high saturated carrier mobility for power electronics applications. With the increased capacity in producing large-size, single-crystalline SiC wafers, it has recently been attracting attention from academia and industry to exploit SiC for integrated photonics owing to its large bandgap energy, wide transparent window, and moderate second-order optical nonlinearity, which is absent in other centrosymmetric silicon-based material platforms. SiC with various polytypes exhibiting second- and third-order optical nonlinearities are promising for implementing nonlinear and quantum light sources in photonic integrated circuits. By optimizing the fabrication processes of the silicon carbide-on-insulator platforms, researchers have exploited the resulting high-quality-factor microring resonators for various nonlinear frequency conversions and spontaneous parametric down-conversion in photonic integrated circuits. In this paper, we review the fundamentals and applications of SiC-based microring resonators, including the material and optical properties, the device design for nonlinear and quantum light sources, the device fabrication processes, and nascent applications in integrated nonlinear and quantum photonics.

Regulation of dynamic recrystallization in p-type Bi2Te3-based compounds leads to high thermoelectric performance and robust mechanical properties

Bi2Te3-based bulk materials are the best commercially available thermoelectric materials for near room temperature applications. However, the poor mechanical properties of zone melting material and inferior thermoelectric performance of powder metallurgical material restrict their large scale deployment. In this study, p-type Bi₂Te₃-based materials were prepared using the hot extrusion technique, and the underlying mechanisms for microstructure evolution were revealed. The hot extrusion speed significantly impacts the strain rate, an indicator to modulate the dynamic recrystallization (DRX) and grain growth, thereby effectively regulating the microstructures of samples. For the sample extruded at a speed of 1.0 mm min−1, the refined grain with an average grain size of 1.53 μm and an orientation factor F(110) of 0.28 is achieved. This highly textured structure and high-density low-angle boundaries (LAGBs) maintain the high carrier mobility of 264 cm2 V−1 s−1, comparable with the zone melting sample. In contrast, increasing grain boundaries, dislocations, and inherent point defects intensifies the phonon scattering and suppresses the lattice thermal conductivity to 0.73 W m−1 K−1. All these contribute to a practical high ZT value of 1.1 at room temperature. Moreover, the fine grains and high-density dislocations ensure robust mechanic properties with a compressive strength of 189 MPa and a bending strength of 139 MPa, which is a guarantee for the successful cutting of microparticles with dimensions of 100 × 100 × 200 μm3. The fabrication of high-quality materials with both high thermoelectric performance and strong mechanical properties paves the way for the miniaturization of thermoelectric modules.

Piezoelectric, Thermoelectric, and Photocatalytic Water Splitting Properties of Janus Arsenic Chalcohalide Monolayers.

In this study, we systematically investigate the piezoelectric, thermoelectric, and photocatalytic properties of novel two-dimensional Janus arsenic chalcohalide monolayers, AsXX' (X = S and Se and X' = Cl, Br, and I) using density functional theory. The positive phonon spectra and ab initio molecular dynamics simulation plots indicate these monolayers to be dynamically and thermally stable. The mechanical stability of these monolayers is confirmed by a nonzero elastic constant (C ij ), Young's modulus (Y 2D), and Poisson ratio (ν). These monolayers exhibit strong out-of-plane piezoelectric coefficients, making them candidate materials for piezoelectric devices. Our calculated results indicate that these monolayers have a low lattice thermal conductivity (κl) and high thermoelectric figure of merit (zT) up to 1.51 at 800 K. These monolayers have an indirect bandgap, high carrier mobility, and strong visible light absorption spectra. Furthermore, the AsSCl, AsSBr, and AsSeI monolayers exhibit appropriate band alignment for water splitting. The calculated value of the corrected solar-to-hydrogen conversion efficiency can reach up to 19%. The nonadiabatic molecular dynamics simulations reveal the prolonged electron-hole recombination rates of 1.52 0.98, and 0.67 ns for AsSCl, AsSBr, and AsSeI monolayers, respectively. Our findings demonstrate these monolayers to be potential candidates in energy-harvesting fields.

Advancements in Optoelectronics: Harnessing the Potential of 2D Violet Phosphorus

AbstractRecently, 2D violet phosphorus (VP), a new kind of allotrope of phosphorus has attained significant attention owing to its remarkable electronic, optical, and magnetic characteristics. Tunable, large direct bandgap, high charge carrier mobility, and large optical absorption make it a potential candidate for realizing photoelectronic applications. VP demonstrates unique electronic structure, chemical stability, strong light‐matter interaction, and thermal stability that can be utilized for assembling intelligent photoelectronic devices. This review article provides comprehensive investigations of the latest synthesis techniques employed to develop the VP including its structural characterizations, stability, and degradation mechanisms. Furthermore, this review demonstrates the diverse applications of VP in optoelectronics, including photodetectors, polarization detection, imaging systems, neuromorphic optoelectronic devices, and many others. Finally, challenges and future research directions associated with the VP in terms of optoelectronics are discussed. Overall, as presented, the review offers an extensive study of VP, covering its synthesis, structural insights mechanisms, and applications in optoelectronics with the aim of stimulating further research and development in this growing field.

High-performance transistors based on monolayer all-inorganic two-dimensional halide perovskite Cs2PbI2Cl2 and its optoelectronic application

The two-dimensional (2D) Ruddlesden−Popper phase all-inorganic halide perovskite Cs2PbI2Cl2 has attracted tremendous attention because of its high carrier mobility, strong light-absorbing ability, and excellent environmental stability, possessing enormous potential for use as a high-performance optoelectronic device. Here, we present two transistor devices based on monolayer (ML) Cs2PbI2Cl2 and reveal their performance and current transport mechanisms through ab initio quantum transport calculations. The n-type 10 nm metal-oxide-semiconductor field-effect transistor shows a high on-state current Ion of 3160 μA/μm, and excellent performance regarding subthreshold swing, intrinsic delay time (τ), and power consumption, which completely match the International Roadmap for Device and Systems (2021 version) targets for high-performance devices and low-power devices in 2028. Moreover, phototransistors based on monolayer Cs2PbI2Cl2 also display a strong response to UV light, with a light-to-dark current ratio reaching a maximum of 104. Meanwhile, a high specific detectivity of 2.45 × 1011 Jones is obtained. The results of our study suggest that ML Cs2PbI2Cl2 is a promising candidate for high-performance transistors.

Engineering the active layer of lead-free perovskite (CH3NH3SnI3) solar cells using numerical simulation

We conduct a thorough numerical simulation to examine the impact of the thickness, defect density, and doping density of the active layer on the photovoltaic performance of the lead-free CH3NH3SnI3 perovskite solar cell (PSC). We observe that increasing the thickness of the active layer initially from 100 nm to 400 nm improved the power conversion efficiency (PCE) from 10.4% to 11.6%. However, further increasing the thickness to 800 nm resulted in a slight decline in PCE to 11.1%. This unexpected trend can be attributed to the high carrier mobility of charges in the CH3NH3SnI3 perovskite, which enables fast extraction of charge carriers, offsetting losses due to charge recombination. Increasing active layer trap density substantially declines the PCE from 11.5% at 1014 cm−3 to 7.5% at 1018 cm−3, as a result of the noticeable drop in open-circuit voltage (VOC) and fill factor (FF) with a growing defect density due to the enhancement in trap-assisted recombination. This is backed by a striking reduction in the shunt resistance upon increasing the defect density. Raising the active layer doping firstly enhances the PCE, reaching a peak value of 12.5% at the active layer doping density of 1017 cm−3, after which the PCE decreases as the doping density continues to increase. We explain these observations by energy level diagrams deduced at various doping levels.