High Bias Voltage Research Articles

Interface Energy‐Level Reorganization for Efficient Perovskite γ‐Ray Detectors

AbstractMetal halide perovskites are promising candidates for gamma‐ray (γ‐ray) spectrum detectors. However, achieving high‐resolution energy spectra in single‐photon pulse‐height analysis mode remains challenging, due to the inevitable leakage currents degrade the recognizable fingerprint energies which is critical for resolving γ‐ray spectroscopy. We demonstrate under high bias voltage, a deficient contact barrier can lead to excessive surface charge injection, thereby increasing leakage current from electrodes to perovskites. Hence, we conceive to employ surface ligand engineering on perovskite single crystals to manipulate energy levels to suppress leakage current. In particular, anchoring a strong dipole ligand onto the perovskite induced surface charge‐density displacement, leading to a downward band bending and heightened the corresponding contact barrier. Consequently, the strategy minimized the detectors’ leakage current by an order of magnitude, to as low as 44 nA cm−2 at −100 V. The resulting detectors show a significant improvement in energy resolution, 3.9 % for 22Na 511 keV γ‐rays has been achieved at room temperature. The resulting detector further resolves each fingerprint energy for 152Eu γ‐spectrum, representing one of the best γ‐rays perovskite detectors reported to date. Moreover, the detectors exhibited stabilized energy resolution without any degradation under a continuous electric field (1,000 V cm−1) for over 300 minutes, representing the longest longevity reported to date.

Investigation of the leakage mechanism in solar-blind AlGaN p-i-n photodetector at high reverse bias

The leakage mechanism of solar-blind AlGaN p-i-n photodetectors has been investigated. By studying the temperature-dependent I–V curves, we determined that Poole–Frenkel emission is the main source of the leakage current, and the corresponding trap energy level is 0.61 eV. Cathodoluminescence measurement demonstrates that the leakage current of the device may be related to the deep-level traps in the p-AlGaN layer. An analysis of deep-level transient spectroscopy testing results for p-AlGaN suggests that nitrogen vacancies formed during the epitaxial growth of high Al-content p-AlGaN act as electron traps. The trap potential energy decreases at high reverse bias voltage, making trapped electrons easier to escape, which increases the leakage current.

Enhanced adhesion and wear resistance of DLC films on AZ31 alloy achieved with high bias voltage

Diamond-like carbon (DLC) films exhibiting high adhesion and exceptional wear resistance were successfully applied onto the AZ31 surface without a adhesive layer. The structural features of the film were examined utilizing Scanning electron microscopy (SEM), Transmission electron microscopy (TEM), and Raman spectroscopy. Mechanical properties were evaluated through Nano-indentation testing, while adhesion was evaluated using a scratch tester. Residual stress was determined by Stoney's equation. The results indicate that utilizing a high substrate bias ranging from −500 to −800 V, results in the presence of multiple craters and dislocations, which contribute to the enhancement of high residual compressive stress and hardness in the DLC film. The heightened compressive stress effectively embeds carbon atoms into the surface of the soft AZ31, creating an interfacial layer that significantly improves adhesion and wear resistance of the film. In contrast, at moderate bias levels with a range from −300 to −500 V, an increase in substrate temperature leads to the expansion and discontinuation of adjacent layers that decreases the mechanical properties, adhesion, and wear resistance of the film. When at low bias levels between 0 and -300 V, the hardness, crack resistance, residual stress, and wear resistance all increase with increasing of bias. Additionally, in this work, the mechanisms of adhesion and wear for the biased film are analyzed.

Improved DC and RF Characteristics of GaN-Based Double-Channel HEMTs by Ultra-Thin AlN Back Barrier Layer.

In order to improve the off-state and breakdown characteristics of double-channel GaN HEMTs, an ultra-thin barrier layer was chosen as the second barrier layer. The strongly polarized and ultra-thin AlN sub-barrier and the InAlN sub-barrier are great candidates. In this article, the two epitaxial structures, AlGaN/GaN/AlN/GaN (sub-AlN) HEMTs and AlGaN/GaN/InAlN/GaN (sub-InAlN) HEMTs, were compared to select a more suitable sub-barrier layer. Through TEM images of the InAlN barrier layer, the segregation of In components can be seen, which decreases the mobility of the second channel. Thus, the sub-AlN HEMTs have a higher output current density and transconductance than those of the sub-InAlN HEMTs. Because the high-quality AlN barrier layer shields the gate leakage current, a 294 V breakdown voltage was achieved by the sub-AlN HEMTs, which is higher than the 121 V of the sub-InAlN HEMTs. The current gain cut-off frequency (fT) and maximum oscillation frequency (fmax) of the sub-AlN HEMTs are higher than that of the sub-InAlN HEMTs from low to high bias voltage. The power-added efficiency (PAE) and output power density (Pout) of the sub-AlN HEMTs are 57% and 11.3 W/mm at 3.6 GHz and 50 V of drain voltage (Vd), respectively. For the sub-InAlN HEMTs, the PAE and Pout are 41.4% and 8.69 W/mm, because of the worse drain lag ratio. Thus, the Pout of the sub-AlN HEMTs is higher than that of the sub-InAlN HEMTs.

Interface Energy-Level Reorganization for Efficient Perovskite γ-Ray Detectors.

Metal halide perovskites are promising candidates for γ-rayspectrum detectors. However, achieving high-resolution energy spectra in single-photon pulse-height analysis mode remains challenging, due to the inevitable leakage currents degrade the recognizable fingerprint energies which is critical for resolving γ-ray spectroscopy. We demonstrate under high bias voltage, a deficient contact barrier can lead to excessive surface charge injection, thereby increasing leakage current from electrodes to perovskites. Hence, we conceive to employ surface ligand engineering on perovskite single crystals to manipulate energy levels to suppress leakage current. In particular, anchoring a strong dipole ligand onto the perovskite induced surface charge-density displacement, leading to a downward band bending and heightened the corresponding contact barrier. Consequently, the strategy minimized the detectors'leakage current by an order of magnitude, to as low as 44 nA cm-2. The resulting detectors show a significant improvement in energy resolution, 3.9% for 22Na 511 keV γ-rays has been achieved at room temperature. The resulting detector further resolves each fingerprint energy for 152Eu γ-spectrum, representing one of the best γ-rays perovskite detectors reported to date. Moreover, the detectors exhibited stabilized energy resolution without any degradation under a continuous electric fieldfor over 300 minutes, representing the longest longevity reported to date.

A discrete CMUT self-biasing circuit towards implanted devices application

Wireless power transfer is an essential feature of biomedical engineering. It reduces the need for energy storage devices in medical implants. To recharge a body implanted battery, a convenient way is to transmit ultrasounds through the skin to a connected ultrasonic transducer. Lead-less, System-on-Chip compatible (SoC) and wideband, Capacitive Micromachined Ultrasonic Transducers (CMUT) are competitive with piezoelectric based technologies. However, their need for a high bias voltage is an obstacle to their use in implanted medical devices (IMDs). The voltage source required must meet precise specifications, such as reliability and volume, which the research community intends to respect. To meet this challenge, this work proposes an electronic circuit that allows a CMUT device to self-bias from a very low initial energy input. After presenting the electronic architecture and its main features, simulation and experimental results validate the solution’s working principle and operating points. With an electronic circuit made up of discrete components, a bias voltage of 60 V is built up from an implanted battery voltage of 2.2 V and an incident pressure of 120 kPa in water.

An integrated multichannel system for air-coupled CMUT array imaging and guided wave detection applications

Abstract Capacitive micromachined ultrasonic transducers (CMUTs) made by MEMS process have become a new choice for air-coupled ultrasonic transducers due to their high sensitivity, low acoustic impedance and easy arraying. At present, in the air coupling application of CMUT transducer, due to the weak signal strength of single element, the CMUT array usually works in a whole piece, limiting the advantage of the array. Therefore, a multi-channel air-coupled CMUT imaging system with high-voltage DC bias and low-noise high-gain current signal amplification is designed to realize the electronic scanning of our CMUT arrays. The imaging system has 16 transmit and receive channels, and each channel consists of pulse transmitting circuit, AC/DC coupling circuit, impedance matching circuit, low-noise transimpedance amplification circuit, controllable gain amplification circuit and AD circuit. The imaging chain and element control method of our CMUT array were developed to realize the electronic scanning imaging of air-coupled ultrasound. The feasibility of the system for non-destructive testing was also verified via the Lamb wave detection in a metal plate.…

Investigations into the Impact of Deposition or Growth Techniques on the Field Oxide TID Response for 4H-SiC Space Applications

The total ionising dose (TID) reliability of a phosphorous pentoxide (P2O5) treated SiO2 (silicon dioxide) layer is compared for the first time to other industrially relevant oxides formed on 4H-silicon carbide (SiC). Metal-oxide-semiconductor capacitors (MOSCAPs) are characterised before and after irradiation to ascertain changes in flat band voltage shift, leakage current, and dielectric breakdown (BV). Secondary ion mass spectrometry (SIMS) profiling reveals a significant phosphorus concentration near the SiO2/SiC interface, which led to improved TID resistance. The P2O5 treated oxide had the lowest leakage current at high voltage bias due to the high-temperature (1,000°C) anneal, though it had a significantly negative flat band voltage due to the high concentration of deposited phosphorus atoms. The thermal and P2O5 oxides demonstrated a TID resistance, suffering only minor shifts in flat band voltage, while the P2O5 oxide suffered the smallest decrease in its BV and the smallest leakage current rise, post-irradiation.

Acid-Mediated Modulation of the Conductance of Diazapentalene Molecular Junctions.

We report an acid-mediated regulation of single-molecule junction conductance achieved using an electron-deficient unit, diazapentalene, functionalized with thiophene extending units and thiomethyl aurophilic terminal groups. This diazapentalene derivative exhibits a protonation reaction in the presence of trifluoroacetic acid, as characterized by UV-vis absorption spectroscopy, and the protonated species shows a voltage-dependent single-molecule conductance, which is not observed for the pristine molecules. Specifically, under a high bias voltage of 850 mV, we observe a conductance value for the protonated molecule larger than that for the deprotonated one by a factor of 4. Density functional theory-based transport calculations show a slight broadening of the HOMO and LUMO frontier orbitals, as well as a reduced HOMO-LUMO gap when the molecule becomes protonated; this implies an increased conductance under protonation that is consistent with the experimental conductance data. Our work demonstrates a new molecular design for versatile control of molecular conductance through the use of acid in the solvent environment.

Single-event burnout in β-Ga2O3 Schottky barrier diode induced by high-energy proton

Single-Event Burnout (SEB) can cause hard damage to devices, leading to permanent failure. However, previous studies have rarely explored the effects of high-energy proton irradiation-induced SEB in β-Ga2O3 Schottky Barrier Diode (SBD), and the underlying mechanisms remain largely unexplored. Experimental results indicate that the reverse bias voltage during irradiation is a critical factor influencing the failure of β-Ga2O3 SBD. Compared to 300 MeV proton irradiation without bias, the introduction of a 300 V reverse bias voltage results in a significant reduction in forward current density (JF). When the reverse bias voltage reaches 400 V or higher, the 300 MeV proton induces SEB in the device. The SEM image of the damaged region reveals that the irradiated device has “voids” formed due to the melting of the Ga2O3 material. Geant 4 and TCAD simulation results indicate that the burnout phenomenon is caused by the elevated lattice temperature inside the device, which results from the implantation of secondary particles under a high reverse bias voltage. As the reverse bias voltage increases, the maximum lattice temperature of β-Ga2O3 SBD also rises. When the reverse bias voltage is sufficiently high, the local lattice temperature inside the device reaches the melting point of Ga2O3 material, ultimately leading to SEB.

A peak enhancement of frequency response of waveguide integrated silicon-based germanium avalanche photodetector

Avalanche photodetectors (APDs) featuring an avalanche multiplication region are vital for reaching high sensitivity and responsivity in optical transceivers. Waveguide-coupled Ge-on-Si separate absorption, charge, and multiplication (SACM) APDs are popular due to their straightforward fabrication process, low optical propagation loss, and high detection sensitivity in optical communications. This paper introduces a lateral SACM Ge-on-Si APD on a silicon-on-insulator (SOI) wafer, featuring a 10 μm-long, 0.5 μm-wide Ge layer at 1310 nm on a standard 8-inch silicon photonics platform. The dark current measures approximately 38.6 μA at −21 V, indicating a breakdown voltage greater than −21 V for the device. The APDs exhibit a unit-gain responsivity of 0.5 A/W at −10 V. At −15 V, their responsivity reaches 2.98 and 2.91 A/W with input powers of −10 and −25 dBm, respectively. The device's 3-dB bandwidth is 15 GHz with an input power of −15 dBm and a gain is 11.68. Experimental results show a peak in impedance at high bias voltages, attributed to inductor and capacitor (LC) circuit resonance, enhancing frequency response. Furthermore, 20 Gbps eye diagrams at −21 V and −9 dBm input power reveal signal to noise ratio (SNRs) of 5.30. This lateral SACM APD, compatible with the stand complementary metal oxide semiconductor (CMOS) process, shows that utilizing the peaking effect at low optical power increases bandwidth.

Feasibility study of CdMnTeSe based diagnostic X-ray detector

Despite their initial commercialization, CdTe-based materials are continuously being developed. However, an approach for obtaining the X-ray response with a current-mode CdMnTeSe (CMTS) detector remains to be explored. This study investigated the feasibility of using CMTS as a potential material in diagnostic X-ray detectors. The CMTS crystals were grown using the Bridgman method and treated with a radiation detector. The X-ray response of the CMTS detector was evaluated under various conditions, including tube voltage, tube current, and bias voltage. In addition, the mass attenuation coefficients of CdTe-based materials, including CMTS, were investigated. Our results demonstrated that CMTS exhibited promising properties for diagnostic X-ray detection, with stable and linear responses across various tube voltages and currents. In addition, the calculated sensitivity of the CMTS detector increased at higher bias voltages, demonstrating its practical applicability. However, problems such as signal loss were observed at higher dose rates, suggesting the need for further optimization of the CMTS growth techniques. Overall, this study indicated the requirement for further improvement in the CMTS crystal properties; however, the potential of CMTS as a candidate material for the next generation of diagnostic X-ray detectors was evident.

2D organic-inorganic lead perovskite: Advancing X-ray detection capability

Two-dimensional (2D) perovskite single crystals have risen to be prominent in the domain of optoelectronic materials due to their exceptional characteristics including notably low ion migration and defect density. A distinguishing feature is the strategic inclusion of larger organic amine spacer, alternately inserted between inorganic lead halide octahedral layers. This spacer effectively mitigates ion migration, even under higher bias voltages, which is particularly advantageous for X-ray detection. However, the simultaneous realization of multiple functions within this realm remains a formidable challenge. In this work, we have synthesized a high-quality organic spacer-incorporated single layered 2D perovskite single crystal of [CYP]PbBr4 (CYP = 1-cyclohexylpiperazine). Our findings reveal the impressive potential of [CYP]PbBr4 in the domain of X-ray detection, as evidenced by the ultrahigh X-ray sensitivity, long-term stability, and astonishingly low detection limit of 1.72 nGyairs-1. Notably, [CYP]PbBr4 also emits bright broadband yellow light with quantum yield of 30.3%, and the fabricated white LED achieves a high Color Rendering Index of 94.1, which surpasses that of commercially available white LED based on YAG: Ce3+ (< 80).

Study on Microstructure, Mechanical Properties, Tribological Properties and Service Performance of CrAlN and CrAlBN Coatings Deposited on Powder Metallurgy High-Speed Steel (PM-HSS) and Shaper Cutter by Arc Ion Plating Technique

CrAlN and CrAlBN coatings were prepared on the surface of high-speed steel and shaper cutter by physical vapor deposition (PVD) technique using arc ion source. In the process of coating preparation, the adhesive layers were deposited by low bias voltage (−40 V) and the working layers are deposited by high bias voltage (−130 V). The effects of the addition of B element on the microstructure, hardness, elastic modulus and wear resistance of CrAlBN coating were studied. The results show that B element and its compounds exist in amorphous form in the coating, resulting in lattice distortion of the coating, increase of coating hardness to 37.1 GPa, and decrease of elastic modulus to 406.2 GPa. The addition of B element increases the uniformity of the columnar structure distribution and decreases the width of the columnar structure and grain size. The resistance to elastic deformation and plastic deformation of CrAlBN coating is improved, the wear resistance is improved. The performance of CrAlN and CrAlBN coatings on shaper cutter was studied. It was found that the main failure mode of shaper cutters is boundary wear and the wear mechanism of coatings had changed obviously. CrAlBN coating is mainly due to fatigue induced failure, accompanied by some diffusion wear. The addition of B element makes the CrAlBN coating have excellent resistance to oxidative wear, abrasive wear and diffusion wear during cutting. The results show that the addition of B element can improve the microstructure and mechanical properties of CrAlN coating, and the preparation of CrAlBN coating on the surface of the shaper cutter can significantly improve the service life of the coated shaper cutter, which has significance for the development of the shaper cutter industry.

Effect of bias voltages and interlayer design on microstructure, mechanical properties, and adhesion performance of AlCrSiN coatings deposited using HiPIMS

This study fabricated AlCrSiN coatings from six alloy targets (Four Al7Cr3 targets and two Cr9Si1 targets) using high-power impulse magnetron sputtering (HiPIMS) with a focus on the effects of substrate bias voltage (−30 to −90 V) on deposition rate, microstructure, crystal orientation, residual stress, and mechanical properties. Electron Probe Microanalysis (EPMA) and X-ray Diffraction (XRD) results revealed that variations in bias voltage had little impact on the element composition or crystal structure (FCC) of AlCrSiN coatings; however, under high bias voltage (exceeding −60 V), the preferred orientation shifted from the (111) plane to the (220). Increasing the bias voltage from −30 to −90 V was shown to reduce the deposition rate (from 42.2 to 37.6 nm/min) and the thickness of the AlCrSiN coating (from 2.9 to 2.6 μm). It was also shown to increase the hardness (from 2147 to 3658 HV) and residual stress (from −0.01 to −0.59 GPa) by reducing the grain size and allowing the formation of a denser structure. Various interlayer designs (AlCr/AlCrxNy/AlCrN, CrSi/AlCrxNy/AlCrN, AlCr/CrSixNy/CrSiN, CrSi/CrSixNy/CrSiN) were assessed in terms of adhesion strength between the AlCrSiN and substrate. Under the same AlCrSiN deposition condition, with the bias voltage set to −60 V, the highest adhesion strength (from 32.28 to 45.81 N) was achieved using a CrSi/CrSixNy/CrSiN interlayer structure.

Effect of nonlinearity induced by atomic switch in Ag/Ag2S nanoparticles on performance of in-materio reservoir computing

A random network of Ag/Ag2S nanoparticles (NPs) was used as a physical system in reservoir computing (RC) because the network has nonlinear and dynamical characteristics. Ag/Ag2S NPs were synthesized by the modified Brust–Schiffrin method. Atomic switching among the NPs caused nonlinear dynamical behavior of the random network. The Fourier transform of output signals indicated that the generated harmonics were far higher with a larger amplitude of the input sine wave because the atomic switching occurred only at high bias voltages. Higher accuracy was achieved in the Boolean logic RC task because of the nonlinearity originating from switching. These findings suggest that nonlinearity plays a fundamental role in the design and implementation of RC devices.

Heterocyclic Diammonium Dion‐Jacobson Perovskite Blue Light‐Emitting Diodes with Nonshift Emission Peak Under High Bias Voltage

AbstractThe emission peak shift caused by ion motion, especially under high bias voltage, is an obstacle to the development of blue perovskite light‐emitting diodes (PeLEDs). In this work, 3‐Aminopiperidine dihydrochloride (3AP) to construct heterocyclic dication Dion‐Jacobson (DJ) PeLEDs is introduced, and found that 3AP incorporation can retard the halide segregation and chloride loss, leading to the improvement of the emission spectral stability. By increasing the amount of 3AP (DJ phase), emission centers can be tuned from green to blue but the excitonic peak abnormally disappears, indicative of exciton delocalization. Photoluminescence quantum yield (PLQY) and ultrafast spectroscopy indicated that the introduction of 3AP can passivate defects and control the exciton delocalization to facilitate interlayer charge transfer. The external quantum efficiencies (EQE) of the obtained green (513 nm), sky blue (488 nm), and blue (478 nm) PeLEDs reached 3.0%, 7.1%, and 4.8%, respectively, and the maximum luminance is 10956, 1093 and 782 cd m−2, respectively. Most importantly, under high operating voltages from 3 to 10 V, the PeLEDs delivered outstanding spectral stability free of peak shift.

Threshold voltage uniformity improvement by introducing charge injection tuning for low-temperature poly-Si thin film transistors with metal/oxide/nitride/oxide/silicon structure

Low-temperature poly-Si thin film transistors (TFTs) with a metal/oxide/nitride/oxide/silicon structure were fabricated to investigate the feasibility of suppressing threshold voltage variations between TFTs. By applying relatively high positive and negative gate bias voltages, threshold voltage could be tuned positively and negatively, respectively, by injecting charges into the charge trap layer. Stability of threshold voltage against positive gate bias at a level close to the actual circuit operation was not degraded compared with the case of an as-fabricated TFT. A uniform threshold voltage distribution could be achieved in a preliminary test using 16 TFTs by converging threshold voltages with a target value by tuning the threshold voltage for each TFT.

Effects of applied negative bias voltage on the optical and structural properties of CaF2 coatings deposited by RF magnetron sputtering

Calcium fluoride (CaF2) is a ceramic material exhibiting versatile properties including broadband transparency, lubrication at high temperature, and mechanical stability. In the current research, aimed at improving optically-driven infrared detection devices, CaF2 coatings were deposited on sapphire. One challenge concerning this CaF2/sapphire system is the significant difference between their coefficients of thermal expansion, which can cause adhesion failure. To avoid such failure, we first studied the behavior of thick CaF2 coatings on silicon substrates where adhesion issues are expected to be more pronounced, then employed thin CaF2 coatings, initially on silicon and subsequently on sapphire substrates.Deposition was carried out by radio frequency magnetron sputtering technique in an argon atmosphere at a fixed power of 4.4 W/cm2. Substrate bias voltage was varied from 0 to - 150 V in order to explore voltage impact on properties of the obtained CaF2 coatings.Coatings deposited with low negative bias voltages presented an inhomogeneous surface with a columnar structure that remained firmly attached to the substrate; optical transmission for these coatings was reduced relative to that for bare sapphire. Alternatively, while coatings deposited with high negative bias voltages became dense and uniform, they were also subjected to high surface reactivity causing formation of CaO/Ca(OH)2 phases and defects, as well as delamination that reduced optical transmission. In contrast, only samples deposited with moderate bias voltages exhibited a sufficiently dense, highly adhesive layer, resulting (relative to that for bare sapphire) in improved optical transmission. Thin CaF2 coatings deposited with −100 V improved transmittance (at a wavelength of 1.9 μm) from almost 88.5 %–92 %, representing approximately a 30 % decrease in radiation loss caused by absorbance, scattering, and reflectance effects. Even though the optical values of transmittance for increased wavelength (up to 5 μm) were reduced, these values still surpassed those obtained for sapphire alone.

Heavy ion single event effect in double-trench SiC metal–oxide–semiconductor field-effect transistors

In this paper, experiments on 208 MeV Ge ion irradiation with different source-drain bias voltages are carried out for the double-trench SiC metal–oxide–semiconductor field-effect transistors, and the physical mechanism of the single event effect is analyzed. The experimental results show that the drain leakage current of the device increases more obviously with the increase of the initial bias voltage during irradiation. When the bias voltage is 400 V during irradiation, the device has a single event burned at a fluence of 9×10&lt;sup&gt;4&lt;/sup&gt; ion/cm&lt;sup&gt;2&lt;/sup&gt;, and when the bias voltage is 500 V, the device has a single event burned at a fluence of 3×10&lt;sup&gt;4&lt;/sup&gt; ion/cm&lt;sup&gt;2&lt;/sup&gt;, so when the LET value is 37.3 MeV·cm&lt;sup&gt;2&lt;/sup&gt;/mg, the SEB threshold of DUT does not exceed 400 V, which is lower than 34 % of the rated operational voltage. The post gate-characteristics test results show that the leakage current of the device with a bias voltage of 100 V does not change significantly during irradiation. When the bias voltage is 200 V, the gate leakage and the drain leakage of the device both increase, so do they when the bias voltage is 300 V, which is positively related to bias voltage. In order to further analyze the single particle effect mechanism of device, the simulation is conducted by using TCAD tool. The simulation results show that at low bias voltage, the heavy ion incident device generates electron-hole pairs, the electrons are quickly swept out, and the holes accumulate at the gate oxygen corner under the effect of the electric field, which combines the source-drain bias voltage, leading to the formation of leakage current channels in the gate oxygen layer. The simulation results also show that at high bias voltage, the electrons generated by the incident heavy ion move towards the junction of the N&lt;sup&gt;–&lt;/sup&gt; drift layer and the N&lt;sup&gt;+&lt;/sup&gt; substrate under the effect of the electric field, which further increases the electric field strength and causes significant impact ionization. The local high current density generated by the impact ionization and the load large electric field causes the lattice temperature to exceed the melting point of silicon carbide, causing single event burnout. This work provides a reference and support for studying the radiation effect mechanism and putting silicon carbide power devices into aerospace applications.